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"A new lifetime prediction method for hot-carrier degradation in n-MOSFETs ..."

Fuchen Mu et al. (2001)

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DOI: 10.1016/S0026-2714(01)00118-4

access: closed

type: Journal Article

metadata version: 2020-02-22

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Fuchen Mu, Mingzhen Xu, Changhua Tan, Xiaorong Duan:
A new lifetime prediction method for hot-carrier degradation in n-MOSFETs with ultrathin gate oxides under V_g=V_d. Microelectron. Reliab. 41(11): 1909-1913 (2001)

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