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"A 0.45 W 18% PAE E-Band Power Amplifier in 100 nm InGaAs pHEMT Technology."

Dixian Zhao, Yongran Yi (2018)

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DOI: 10.1155/2018/8234615

access: open

type: Journal Article

metadata version: 2020-08-06

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  - journals/wicomm/ZhaoY18
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  - https://dblp.org/rec/journals/wicomm/ZhaoY18
Dixian Zhao, Yongran Yi:
A 0.45 W 18% PAE E-Band Power Amplifier in 100 nm InGaAs pHEMT Technology. Wirel. Commun. Mob. Comput. 2018 (2018)

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