Microelectronics Reliability, Volumes 88-90

Volumes 88-90, September 2018

29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis ( ESREF 2018 )

• 
  Mauro Ciappa, Paolo Cova, Gaudenzio Meneghesso, Francesco Iannuzzo:
  Editorial. 1
• 
  Wen-Chieh Chen, Ming-Dou Ker:
  Surge protection design with surge-to-digital converter for microelectronic circuits and systems. 2-5
• 
  Hassen Aziza, Basma Hajri, Mohammad M. Mansour, Ali Chehab, Annie Pérez:
  A lightweight write-assist scheme for reduced RRAM variability and power. 6-10
• 
  Ivo Vogt, Tomonori Nakamura, B. Motamedi, Christian Boit:
  Device characterization of 16/14 nm FinFETs for reliability assessment with infrared emission spectra. 11-15
• 
  Marianne Unterreitmeier, Oliver Nagler, Lothar Pfitzner, Robert Weigel, Rainer Holmer:
  An acoustic emission sensor system for thin layer crack detection. 16-21
• 
  Elham Amini, Anne Beyreuther, Norbert Herfurth, Alexander Steigert, R. Muydinov, Bernd Szyszka, Christian Boit:
  IC security and quality improvement by protection of chip backside against hardware attacks. 22-25
• 
  Giovanna Mura:
  Reliability concerns from the gray market. 26-30
• 
  Michal Baszynski, P. Rydygier, Mariusz Wojcik:
  Experimental studies of: Laminate composition, drill bit wear out, and chloride ion concentration as factors affecting CAF formation rate. 31-37
• 
  Sebastián Matías Pazos, Fernando L. Aguirre, Felix Palumbo, Fernando Silveira:
  Performance-reliability trade-offs in short range RF power amplifier design. 38-42
• 
  Nick Baker, Francesco Iannuzzo:
  Smart SiC MOSFET accelerated lifetime testing. 43-47
• 
  Bahar Ahmadi, Pouya Tavousi, Joseph Favata, Peiman Shahbeigi-Roodposhti, Rengarajan Pelapur, Sina Shahbazmohamadi:
  A novel crowdsourcing platform for microelectronics counterfeit defect detection. 48-53
• 
  Abdellatif Bey-Temsamani, S. Kauffmann, Stijn Helsen, T. Gaens, V. Driesen:
  Physics-of-Failure (PoF) methodology for qualification and lifetime assessment of supercapacitors for industrial applications. 54-60
• 
  Julien Coutet, François Marc, Flavien Dozolme, Romain Guétard, Aurélien Janvresse, Pierre Lebossé, Antonin Pastre, Jean-Claude Clement:
  Influence of temperature of storage, write and read operations on multiple level cells NAND flash memories. 61-66
• 
  Morgane Mousnier, Kévin Sanchez, Elsa Locatelli, Thierry Lebey, Vincent Bley:
  Lock-in thermography for defect localization and thermal characterization for space application. 67-74
• 
  Mingyao Ma, Kaiqi Chu, Mingyue Zhan, Ye Wang, Fang Liu:
  Statistical analysis of characteristic of ageing precursor of IGBT based on synthetic effect of multi-physical fields. 75-79
• 
  Pham Luu Trung Duong, Hyunseok Park, Nagarajan Raghavan:
  Application of multi-output Gaussian process regression for remaining useful life prediction of light emitting diodes. 80-84
• 
  Pham Luu Trung Duong, Xuechu Xu, Qing Yang, Nagarajan Raghavan:
  Gaussian process regression approach for robust design and yield enhancement of self-assembled nanostructures. 85-90
• 
  G. Prathiba, M. Santhi, A. Ahilan:
  Design and implementation of reliable flash ADC for microwave applications. 91-97
• 
  O. Dixon-Luinenburg, J. Fine:
  In-situ transistor reliability measurements through nanoprobing. 98-102
• 
  Xiaoman Sun, Meng Huang, Yi Liu, Xiaoming Zha:
  Investigation of artificial neural network algorithm based IGBT online condition monitoring. 103-106
• 
  Xuerong Ye, Yigang Lin, Qingmin Wang, Hao Niu, Guofu Zhai:
  Manufacturing process-based storage degradation modelling and reliability assessment. 107-110
• 
  Alexandra L. Zimpeck, Cristina Meinhardt, Laurent Artola, Guillaume Hubert, Fernanda Lima Kastensmidt, Ricardo Augusto da Luz Reis:
  Impact of different transistor arrangements on gate variability. 111-115
• 
  Leonardo B. Moraes, Alexandra L. Zimpeck, Cristina Meinhardt, Ricardo Augusto da Luz Reis:
  Evaluation of variability using Schmitt trigger on full adders layout. 116-121
• 
  Thiago Ferreira de Paiva Leite, Laurent Fesquet, Rodrigo Possamai Bastos:
  A body built-in cell for detecting transient faults and dynamically biasing subcircuits of integrated systems. 122-127
• 
  Raphael Andreoni Camponogara Viera, Jean-Max Dutertre, Marie-Lise Flottes, Olivier Potin, Giorgio Di Natale, Bruno Rouzeyre, Rodrigo Possamai Bastos:
  Assessing body built-in current sensors for detection of multiple transient faults. 128-134

Si Technologies & Nanoelectronics: Hot Carriers, High K, Gate Materials

• 
  Ninoslav Stojadinovic, Snezana Djoric-Veljkovic, Vojkan Davidovic, Snezana Golubovic, Srboljub Stankovic, Aneta Prijic, Zoran Prijic, Ivica Manic, Danijel Dankovic:
  NBTI and irradiation related degradation mechanisms in power VDMOS transistors. 135-141
• 
  Alberto Rodriguez-Fernandez, J. Muñoz-Gorriz, Jordi Suñé, Enrique Miranda:
  A new method for estimating the conductive filament temperature in OxRAM devices based on escape rate theory. 142-146
• 
  Maurits J. de Jong, Cora Salm, Jurriaan Schmitz:
  Towards understanding recovery of hot-carrier induced degradation. 147-151
• 
  D. Beckmeier, Andreas Martin:
  Variation-resilient quantifiable plasma process induced damage monitoring. 152-158
• 
  Vincenzo Della Marca, Jérémy Postel-Pellerin, Thibault Kempf, Arnaud Régnier, Philippe Chiquet, Marc Bocquet:
  Quantitative correlation between Flash and equivalent transistor for endurance electrical parameters extraction. 159-163
• 
  Xuan Feng, Nagarajan Raghavan, Sen Mei, Shurong Dong, Kin Leong Pey, Hei Wong:
  Statistical nature of hard breakdown recovery in high-κ dielectric stacks studied using ramped voltage stress. 164-168
• 
  Shunqiang Xu, Hongyi Wang, Jianfei Wu, Liming Zheng, Jietao Diao:
  A new multitime programmable non-volatile memory cell using high voltage NMOS. 169-172
• 
  Guicui Fu, Yutai Su, Wendi Guo, Bo Wan, Zhongqing Zhang, Ye Wang:
  Life prediction methodology of system-in-package based on physics of failure. 173-178
• 
  Gang-Jun Kim, Nam-Hyun Lee, Jongkyun Kim, Jung Eun Seok, Yunsung Lee:
  Effect of DC/AC stress on the reliability of cell capacitor in DRAM. 179-182
• 
  Jongkyun Kim, Namhyun Lee, Gang-Jun Kim, Young-Yun Lee, Jung-Eun Seok, Yunsung Lee:
  Effect of OFF-state stress on reliability of nMOSFET in SWD circuits of DRAM. 183-185
• 
  Yeohyeok Yun, Ji-Hoon Seo, Donghee Son, Bongkoo Kang:
  Method to estimate profile of threshold voltage degradation in MOSFETs due to electrical stress. 186-190
• 
  Yeohyeok Yun, Gang-Jun Kim, Ji-Hoon Seo, Donghee Son, Bongkoo Kang:
  Method to extract parameters of power law for nano-scale SiON pMOSFETs under negative bias temperature instability. 191-195
• 
  Roberto B. Almeida, Cleiton Magano Marques, Paulo F. Butzen, Fábio G. R. G. da Silva, Ricardo A. L. Reis, Cristina Meinhardt:
  Analysis of 6 T SRAM cell in sub-45 nm CMOS and FinFET technologies. 196-202

Si Technologies & Nanoelectronics: ESD, EMI, Latch-up

• 
  Chunlei Wu:
  Electrically induced physical damage (EIPD) cases study: From electrical overstress (EOS) to product defects. 203-207
• 
  Steffen Holland, Rolf Brenner:
  Voltage oscillations during surge pulses induced by self-extinguishing non-destructive second breakdown in pn-junction diodes. 208-213
• 
  Roger C. Goerl, Paulo Ricardo Cechelero Villa, Letícia Maria Veiras Bolzani, Eduardo Augusto Bezerra, Fabian Luis Vargas:
  An efficient EDAC approach for handling multiple bit upsets in memory array. 214-218
• 
  Shawki Douzi, Moncef Kadi, Habib Boulzazen, Mohamed Tlig, Jaleleddine Ben Hadj Slama:
  Conducted EMI evolution of power SiC MOSFET in a Buck converter after short-circuit aging tests. 219-224
• 
  Zhen Zhang, Yaoting Xue, Ruiqing Ma, Yongheng Yang:
  An easy-implemented confidence filter for signal processing in the complex electromagnetic environment. 225-229
• 
  Jianfei Wu, Wei Zhu, Binhong Li, Yafei Li, Hongyi Wang, Mengjun Wang:
  Investigations on immunity of interfaces between intelligent media processor and DDR3 SDRAM memory. 230-235
• 
  Roman Baburske, Franz-Josef Niedernostheide, Hans-Joachim Schulze, Riteshkumar Bhojani, J. Kowalsky, Josef Lutz:
  Unified view on energy and electrical failure of the short-circuit operation of IGBTs. 236-241

Progress in Failure Analysis: Defect Detection and Analysis

• 
  Yuji Yamagishi, Y. Cho:
  High resolution observation of defects at SiO₂/4H-SiC interfaces using time-resolved scanning nonlinear dielectric microscopy. 242-245
• 
  Yi Chao Low, Pik Kee Tan, Soon Leng Tan, Yuzhe Zhao, Jeffrey Lam:
  Solving 28 nm I/O circuit reliability issue due to IC design weakness. 246-249
• 
  Oskar Amster, K. A. Rubin, Y. Yang, D. Iyer, Arron Messinger:
  Application of Scanning Microwave Microscopy nano-C-V to investigate dopant defect under a poly gate device. 250-254
• 
  Venkat Krishnan Ravikumar, Gabriel Lim, Jiann Min Chin, Kin Leong Pey, Joel K. W. Yang:
  Understanding spatial resolution of laser voltage imaging. 255-261
• 
  Eva Kozic, René Hammer, Jördis Rosc, Bernhard Sartory, Joerg Siegert, Franz Schrank, Roland Brunner:
  Metallization defect detection in 3D integrated components using scanning acoustic microscopy and acoustic simulations. 262-266
• 
  Emanuele Villa, Audrey Garnier, Antoine Reverdy:
  Exploitation of Laser Voltage techniques for identification and complete characterization of a scan chain transition fail issue using the second harmonic approach. 267-272
• 
  Anne Beyreuther, Norbert Herfurth, Elham Amini, Tomonori Nakamura, Ingrid De Wolf, Christian Boit:
  Photon emission as a characterization tool for bipolar parasitics in FinFET technology. 273-276
• 
  Tan Li, Hosung Lee, GeunYong Bak, Sanghyeon Baeg:
  Failure signature analysis of power-opens in DDR3 SDRAMs. 277-281
• 
  Michael Hertl, Nicolas Vivet, Fabien Allanic, Sandra Dureau, Armelle Minguet, Nicolas Porcher, Isaline Richard, Pauline Serre:
  Use of golden samples for the assessment of the quality and reproducibility of scanning acoustic microscopy images of electronics samples. 282-287
• 
  Nabil El Belghiti Alaoui, Alexandre Boyer, Patrick Tounsi, Arnaud Viard:
  New defect detection approach using near electromagnetic field probing of high density PCBAs. 288-293
• 
  Giulia Marcello, Eleonora Meda, Matteo Medda:
  Complex automotive ICs defect localization driven by quiescent power supply current: Three cases study. 294-298
• 
  T. Schaffus, P. Albert, W. Breuer, D. Debie, M. Graml, C. Hollerith, F. Kroninger, W. Mack, H. Pfaff, M. Schaffus, J. Walter:
  Influence of sample preparation on intrinsic stresses inside a model Chip - First results of partial decapsulation. 299-303
• 
  Amir Sajjad Bahman, S. M. Jensen, Francesco Iannuzzo:
  Failure mechanism analysis of fuses subjected to manufacturing and operational thermal stresses. 304-308
• 
  Pik Kee Tan, Yuzhe Zhao, Francis Rivai, Binghai Liu, Yanlin Pan, Ran He, Hao Tan, Zhihong Mai:
  Cross-sectional nanoprobing sample preparation on sub-micron device with fast laser grooving technique. 309-314
• 
  Marc van Veenhuizen:
  Void detection in solder bumps with deep learning. 315-320
• 
  Shaalini Chithambaram, Pik Kee Tan, Yuzhe Zhao, Binghai Liu, Yinzhe Ma, Alfred Quah, Dayanand Nagalingam, Yanlin Pan, Zhihong Mai:
  Failure analysis on 14 nm FinFET devices with ESD CDM failure. 321-333
• 
  Ivo Vogt, Tomonori Nakamura, Ingrid De Wolf, Christian Boit:
  Detection of failure mechanisms in 24-40 nm FinFETs with (spectral) photon emission techniques using InGaAs camera. 334-338
• 
  Xuerong Ye, Cen Chen, Guofu Zhai:
  Fault localization of a switched mode power supply based on extended integer-coded dictionary method. 339-344
• 
  Hye-Young Kim, Jae-Yeon Kim, Ki-Tae Yoo, Won-Jon Yang, Jai-Won Byeon:
  Failure mechanism of Ag nanowire-coated conductive transparent electrode for wearable devices under folding and torsional fatigue condition. 345-349
• 
  Zhongliang Li, Zhixue Zheng, Rachid Outbib:
  A prognostic methodology for power MOSFETs under thermal stress using echo state network and particle filter. 350-354
• 
  G. Cardoso Medeiros, Letícia Maria Veiras Bolzani, Mottaqiallah Taouil, Fabian Vargas, Said Hamdioui:
  A defect-oriented test approach using on-Chip current sensors for resistive defects in FinFET SRAMs. 355-359
• 
  Katsuyoshi Miura, Atsuki Seko, Koji Nakamae:
  Simulation-based evaluation of probing attacks to arbiter PUFs using a time-resolved emission microscope. 360-364
• 
  Patrick Dreher, Roman Schmidt, A. Vetter, J. Hepp, Karl Aberer, Christoph J. Brabec:
  Non-destructive imaging of defects in Ag-sinter die attach layers - A comparative study including X-ray, Scanning Acoustic Microscopy and Thermography. 365-370
• 
  Bahar Ahmadi, Bahram Javidi, Sina Shahbazmohamadi:
  Automated detection of counterfeit ICs using machine learning. 371-377

Reliability of Microwave and Compound Semiconductors Devices

• 
  Andrew Barnes, Florence Hélière, P. Villar, Hannes Stuhldreier, C. Beaurain, D. Bouw, M. Grunwald, E. Moess, Tobias Muck, C. Schildbach, T. Ayles, A. Kramer, B. Bildner:
  Qualification of GaN microwave transistors for the European Space Agency Biomass mission. 378-384
• 
  Maximilian Dammann, Martina Baeumler, Peter Brückner, Tobias Kemmer, Helmer Konstanzer, Andreas Graff, Michél Simon-Najasek, Rüdiger Quay:
  Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology. 385-388
• 
  Florian Peter Pribahsnik, Mirko Bernardoni, Michael Nelhiebel, M. Mataln, A. Lindemann:
  Combined experimental and numerical approach to study electro-mechanical resonant phenomena in GaN-on-Si heterostructures. 389-392
• 
  Wardhana A. Sasangka, Yu Gao, Chee Lip Gan, Carl V. Thompson:
  Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors. 393-396
• 
  Mehdi Rzin, Alessandro Chini, Carlo De Santi, Matteo Meneghini, A. Hugger, Marc Hollmer, H. Stieglauer, M. Madel, J. Splettstößer, Daniel Sommer, Jan Grünenpütt, K. Beilenhoff, Hervé Blanck, J.-T. Chen, O. Kordina, Gaudenzio Meneghesso, Enrico Zanoni:
  On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs. 397-401
• 
  Omar Chihani, L. Théolier, Alain Bensoussan, Jean-Yves Delétage, André Durier, Eric Woirgard:
  Effect of HTRB lifetest on AlGaN/GaN HEMTs under different voltages and temperatures stresses. 402-405
• 
  D. Hachem, David Trémouilles, Frederic Morancho, Gaëtan Toulon:
  A new electro-optical transmission-line measurement-method revealing a possible contribution of source and drain contact resistances to GaN HEMT dynamic on-resistance. 406-410
• 
  Dongshin Kim, Ju-Hwan Choi, Nochang Park, Sung-Il Chan, Yongchae Jeong:
  Analysis of semiconductor fault using DS (damped sinusoidal) HPEM injection. 411-417
• 
  Mourad Oualli, Christian Dua, O. Patard, P. Altuntas, S. Piotrowicz, Piero Gamarra, Cedric Lacam, J.-C. Jacquet, L. Teisseire, D. Lancereau, Eric Chartier, C. Potier, Sylvain L. Delage:
  Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes. 418-422

Power Devices Reliability: Silicon and Passive

• 
  Keting Hu, Zhigang Liu, Francesco Iannuzzo, Frede Blaabjerg:
  Simple and effective open switch fault diagnosis of single-phase PWM rectifier. 423-427
• 
  Julio Brandelero, Jeffrey Ewanchuk, Nicolas Degrenne, Stefan Mollov:
  Lifetime extension through Tj equalisation by use of intelligent gate driver with multi-chip power module. 428-432
• 
  Kazunori Hasegawa, Shinichi Nishizawa, Ichiro Omura:
  ESR and capacitance monitoring of a dc-link capacitor used in a three-phase PWM inverter with a front-end diode rectifier. 433-437
• 
  Paolo Magnone, Giacomo Barletta, A. Magrì:
  Investigation of degradation mechanisms in low-voltage p-channel power MOSFETs under High Temperature Gate Bias stress. 438-442
• 
  Hiroaki Matsumori, Kazuki Urata, Toshihisa Shimizu, Koushi Takano, Hitoshi Ishii:
  Capacitor loss analysis method for power electronics converters. 443-446
• 
  S. Kremp, O. Schilling:
  Humidity robustness for high voltage power modules: Limiting mechanisms and improvement of lifetime. 447-452
• 
  Hao Niu, Shujuan Wang, Xuerong Ye, Huai Wang, Frede Blaabjerg:
  Lifetime prediction of aluminum electrolytic capacitors in LED drivers considering parameter shifts. 453-457
• 
  Akihiko Watanabe, Ichiro Omura:
  A power cycling degradation inspector of power semiconductor devices. 458-461
• 
  Nausicaa Dornic, Ali Ibrahim, Zoubir Khatir, Son-Ha Tran, Jean-Pierre Ousten, Jeffrey Ewanchuk, Stefan Mollov:
  Analysis of the degradation mechanisms occurring in the topside interconnections of IGBT power devices during power cycling. 462-469
• 
  Charalampos Papadopoulos, Chiara Corvasce, Arnost Kopta, Daniel Schneider, Gontran Pâques, Munaf Rahimo:
  The influence of humidity on the high voltage blocking reliability of power IGBT modules and means of protection. 470-475
• 
  Mauro Ciappa, Ying Pang, Chenchen Sun:
  Experimental characterization of critical high-electric field spots in power semiconductors by planar and scanning collimated alpha sources. 476-481
• 
  Masanori Tsukuda, Seiya Abe, Kazunori Hasegawa, Tamotsu Ninomiya, Ichiro Omura:
  Bias voltage criteria of gate shielding effect for protecting IGBTs from shoot-through phenomena. 482-485
• 
  Mohamed Halick Mohamed Sathik, Prasanth Sundarajan, F. Sasongko, Josep Pou:
  Online condition monitoring of IGBT modules using voltage change rate identification. 486-492
• 
  Vahid Samavatian, Yvan Avenas, Hossein Iman-Eini:
  Mutual and self-aging effects of power semiconductors on the thermal behaviour of DC-DC boost power converter. 493-499
• 
  Bat-Otgon Bat-Ochir, Battuvshin Bayarkhuu, Kazunori Hasegawa, Masanori Tsukuda, Bayasgalan Dugarjav, Ichiro Omura:
  Envelop tracking based embedded current measurement for monitoring of IGBT and power converter system. 500-504
• 
  Ravi N. Tripathi, Masanori Tsukuda, Ichiro Omura:
  A fully digital feedback control of gate driver for current balancing of parallel connected power devices. 505-509
• 
  Th. Stiasny, Olivier Quittard, Daniel Waltisberg, U. Meier:
  Reliability evaluation of IGCT from accelerated testing, quality monitoring and field return analysis. 510-513
• 
  Yu Peng, Y. J. Zhang, Datong Liu, Liansheng Liu:
  Degradation estimation using feature increment stepwise linear regression for PWM Inverter of Electro-Mechanical Actuator. 514-518
• 
  Zhongxu Wang, Huai Wang, Yi Zhang, Frede Blaabjerg:
  A multi-port thermal coupling model for multi-chip power modules suitable for circuit simulators. 519-523
• 
  Haoran Wang, Huai Wang:
  An analytical circuit based nonlinear thermal model for capacitor banks. 524-527
• 
  Nga Man Li, Subramani Manoharan, Diganta Das, F. Patrick McCluskey:
  Analysis of indentation measured mechanical properties on Multilayer Ceramic Capacitors (MLCCs). 528-533
• 
  Felix Wuest, S. Trampert, S. Janzen, Stefan Straube, Martin Schneider-Ramelow:
  Comparison of temperature sensitive electrical parameter based methods for junction temperature determination during accelerated aging of power electronics. 534-539
• 
  Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi:
  Measure of high frequency input impedance to study the instability of power devices in short circuit. 540-544
• 
  Pooya Davari, O. Kristensen, Francesco Iannuzzo:
  Investigation of acoustic emission as a non-invasive method for detection of power semiconductor aging. 545-549

Power Devices Reliability: Wide Bandgap Devices

• 
  Josef Lutz, Jörg Franke:
  Reliability and reliability investigation of wide-bandgap power devices. 550-556
• 
  Jose Angel Ortiz Gonzalez, Olayiwola Alatise:
  Bias temperature instability and condition monitoring in SiC power MOSFETs. 557-562
• 
  Haoze Luo, Paula Diaz Reigosa, Francesco Iannuzzo, Frede Blaabjerg:
  On-line solder layer degradation measurement for SiC-MOSFET modules under accelerated power cycling condition. 563-567
• 
  Eric E. Fabris, Matteo Meneghini, Carlo De Santi, Zongyang Hu, Wenshen Li, Kazuki Nomoto, Debdeep Jena, Huili Grace Xing, Xiang Gao, Gaudenzio Meneghesso, Enrico Zanoni:
  Degradation of GaN-on-GaN vertical diodes submitted to high current stress. 568-571
• 
  Alaleh Tajalli, Eleonora Canato, Arianna Nardo, Matteo Meneghini, Arno Stockman, Peter Moens, Enrico Zanoni, Gaudenzio Meneghesso:
  Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors. 572-576
• 
  Paula Diaz Reigosa, Francesco Iannuzzo, Lorenzo Ceccarelli:
  Effect of short-circuit stress on the degradation of the SiO₂ dielectric in SiC power MOSFETs. 577-583
• 
  Matteo Borga, Matteo Meneghini, Steve Stoffels, Marleen Van Hove, M. Zhao, X. Li, Stefaan Decoutere, Enrico Zanoni, Gaudenzio Meneghesso:
  Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs. 584-588
• 
  Tomoyuki Mannen, Keiji Wada:
  Operating-waveform analysis based reliability evaluation of power MOSFETs used for a leg short-circuit initial charge method. 589-592
• 
  Xi Jiang, Jun Wang, Jiwu Lu, Jianjun Chen, Xin Yang, Zongjian Li, Chunming Tu, Zheng John Shen:
  Failure modes and mechanism analysis of SiC MOSFET under short-circuit conditions. 593-597
• 
  F. Boige, Frédéric Richardeau, Stéphane Lefebvre, Jean-Marc Blaquière, G. Guibaud, A. Bourennane:
  Ensure an original and safe "fail-to-open" mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation. 598-603
• 
  Besar Asllani, Asad Fayyaz, Alberto Castellazzi, Hervé Morel, Dominique Planson:
  V_TH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs. 604-609
• 
  Dario Pagnano, Giorgia Longobardi, Florin Udrea, Jinming Sun, Mohamed Imam, Reenu Garg, Hyeongnam Kim, Alain Charles:
  On the impact of substrate electron injection on dynamic Ron in GaN-on-Si HEMTs. 610-614
• 
  Fausto Stella, Olufisayo Olanrewaju, Zineng Yang, Alberto Castellazzi, Gianmario Pellegrino:
  Experimentally validated methodology for real-time temperature cycle tracking in SiC power modules. 615-619
• 
  Maria Ruzzarin, Matteo Meneghini, Carlo De Santi, Min Sun, Tomás Palacios, Gaudenzio Meneghesso, Enrico Zanoni:
  Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments. 620-626
• 
  Lorenzo Ceccarelli, Haoze Luo, Francesco Iannuzzo:
  Investigating SiC MOSFET body diode's light emission as temperature-sensitive electrical parameter. 627-630
• 
  Teng Zhang, Bruno Allard, Jinshun Bi:
  The synergetic effects of high temperature gate bias and total ionization dose on 1.2 kV SiC devices. 631-635
• 
  Oriol Avino-Salvado, Hervé Morel, Cyril Buttay, Denis Labrousse, Stéphane Lefebvre:
  Threshold voltage instability in SiC MOSFETs as a consequence of current conduction in their body diode. 636-640
• 
  Thomas Lorin, William Vandendaele, Romain Gwoziecki, Charlotte Gillot, Jérome Biscarrat, Gérard Ghibaudo, Fred Gaillard:
  Study of forward AC stress degradation of GaN-on-Si Schottky diodes. 641-644
• 
  Tien Anh Nguyen, Stéphane Lefebvre, Stephane Azzopardi:
  Effect of short circuit aging on safe operating area of SiC MOSFET. 645-651
• 
  Jian-Zhi Fu, François Fouquet, Moncef Kadi, Pascal Dherbécourt:
  Evolution of C-V and I-V characteristics for a commercial 600 V GaN GIT power device under repetitive short-circuit tests. 652-655
• 
  Quentin Molin, Mehdi Kanoun, Christophe Raynaud, Hervé Morel:
  Measurement and analysis of SiC-MOSFET threshold voltage shift. 656-660
• 
  H. Du, Paula Diaz Reigosa, Francesco Iannuzzo, Lorenzo Ceccarelli:
  Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules. 661-665
• 
  Asad Fayyaz, Besar Asllani, Alberto Castellazzi, Michele Riccio, Andrea Irace:
  Avalanche ruggedness of parallel SiC power MOSFETs. 666-670
• 
  Malika Elharizi, Fadi Zaki, Ali Ibrahim, Zoubir Khatir, Jean-Pierre Ousten:
  Effect of power cycling tests on traps under the gate of Al₂O₃/AlGaN/GaN normally-ON devices. 671-676
• 
  Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi:
  Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests. 677-683

Packaging and Assembly Reliability

• 
  Jie Mei, R. Haug, O. Lanier, Tobias Grözinger, André Zimmermann:
  Effect of Joule heating on the reliability of solder joints under power cycling conditions. 684-690
• 
  T. Fujiwara, K. Yamamoto, Hidehiko Kimura:
  Quantification of lead-free solder fatigue by EBSD analysis. 691-694
• 
  Chanyang Choe, Seungjun Noh, Chuantong Chen, Dongjin Kim, Katsuaki Suganuma:
  Influence of thermal exposure upon mechanical/electrical properties and microstructure of sintered micro-porous silver. 695-700
• 
  Seungjun Noh, Hao Zhang, Jeyun Yeom, Chuantong Chen, Caifu Li, Katsuaki Suganuma:
  Large-area die-attachment by silver stress migration bonding for power device applications. 701-706
• 
  Yoann Pascal, Denis Labrousse, Mickael Petit, Stéphane Lefebvre, François Costa:
  Experimental investigation of the reliability of Printed Circuit Board (PCB)-embedded power dies with pressed contact made of metal foam. 707-714
• 
  Elisabeth Kolbinger, Stefan Wagner, Astrid Gollhardt, Olaf Rämer, Klaus-Dieter Lang:
  Corrosion behaviour of sintered silver under maritime environmental conditions. 715-720
• 
  Thomas Walter, Golta Khatibi, Michael Nelhiebel, M. Stefenelli:
  Characterization of cyclic delamination behavior of thin film multilayers. 721-725
• 
  Christian Uhrenfeldt, Stig Munk-Nielsen, Szymon Beczkowski:
  Frequency domain scanning acoustic microscopy for power electronics: Physics-based feature identification and selectivity. 726-732
• 
  S. Zanella, A. Lecavelier des Etangs-Levallois, Eric Charkaluk, W. C. Maia Filho, A. Constantinescu:
  Importance of electric resistance monitoring in shear test. 733-737
• 
  Subramani Manoharan, Chandradip Patel, Stevan Hunter, F. Patrick McCluskey:
  Mechanism of wire bond shear testing. 738-744
• 
  Bernhard Czerny, Golta Khatibi:
  Cyclic robustness of heavy wire bonds: Al, AlMg, Cu and CucorAl. 745-751
• 
  Davide Cornigli, Susanna Reggiani, Antonio Gnudi, Elena Gnani, Giorgio Baccarani, Davide Fabiani, Dhanoop Varghese, Enis Tuncer, S. Krishnan, Luu Nguyen:
  Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture. 752-755
• 
  Guang Zeng, F. Wenisch-Kober, Josef Lutz:
  Study on power cycling test with different control strategies. 756-761
• 
  Allen Jose George, Juergen Zipprich, Marlies Breitenbach, Markus Klingler, Mathias Nowottnick:
  Reliability investigation of large area solder joints in power electronics modules and its simulative representation. 762-767
• 
  Faical Arabi, Alexandrine Guédon-Gracia, Jean-Yves Delétage, Hélène Frémont:
  Sequential combined thermal cycling and vibration test and simulation of printed circuit board. 768-773
• 
  Mads Brincker, Peter Kjær Kristensen, S. Söhl, R. Eisele, Vladimir N. Popok:
  Low temperature transient liquid phase bonded Cu-Sn-Mo and Cu-Sn-Ag-Mo interconnects - A novel approach for hybrid metal baseplates. 774-778
• 
  Dongjin Kim, Chuantong Chen, Aiji Suetake, Chanyang Choe, Tohru Sugahara, Shijo Nagao, Katsuaki Suganuma:
  Development of thermal shock-resistant of GaN/DBC die-attached module by using Ag sinter paste and thermal stress relaxation structure. 779-787
• 
  Ui-Min Choi, Søren Jørgensen, Francesco Iannuzzo, Frede Blaabjerg:
  Power cycling test of transfer molded IGBT modules by advanced power cycler under different junction temperature swings. 788-794
• 
  Sanghun Jin, Min-Su Kim, Shutetsu Kanayama, Hiroshi Nishikawa:
  Shear properties of In-Bi alloy joints with Cu substrates during thermal aging. 795-800
• 
  Paolo Cova, Nicola Delmonte, Diego Chiozzi, Marco Portesine, F. Vaccaro, E. Mantegazza:
  Water cold plates for high power converters: A software tool for easy optimized design. 801-805
• 
  Yi Zhang, Huai Wang, Zhongxu Wang, Frede Blaabjerg:
  An empirical model for thermal interface materials based on experimental characterizations under realistic conditions. 806-811
• 
  Mattia Antonini, Paolo Cova, Nicola Delmonte, Alberto Castellazzi:
  GaN transistors efficient cooling by graphene foam. 812-816
• 
  Cheryl Selvanayagam, Rathin Mandal, Nagarajan Raghavan:
  Comparison of experimental, analytical and simulation methods to estimate substrate material properties for warpage reliability analysis. 817-823

MEMS, Sensors, Photonics and Organic Electronics Reliability

• 
  Chun-Lin Lu, Pei-Rong Ni, Meng-Kao Yeh:
  Stress analysis of CMOS-MEMS microphone under shock loading by Taguchi method. 824-828
• 
  F. Saghaeian, J. Keckes, K. A. Schreiber, T. Mittereder:
  Design and development of MEMS-based structures for in-situ characterization of thermo-mechanical behaviour of thin metal films. 829-834
• 
  Daniel Monteiro Diniz Reis, Sven Rzepka, Karla Hiller:
  Reliability testing of integrated low-temperature PVD PZT films. 835-839
• 
  Dimitrios Birmpiliotis, Matroni Koutsoureli, J. Kohylas, George J. Papaioannou, A. Ziaei:
  Charging mechanisms in Y₂O₃ dielectric films for MEMS capacitive switches. 840-845
• 
  Ivan Marozau, Maxime Auchlin, Vaclav Pejchal, Frédéric Souchon, Dietmar Vogel, Markku Lahti, Nicolas Saillen, Olha Sereda:
  Reliability assessment and failure mode analysis of MEMS accelerometers for space applications. 846-854
• 
  Matteo Buffolo, M. Pietrobon, Carlo De Santi, F. Samparisi, Michael L. Davenport, John E. Bowers, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
  Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits. 855-858
• 
  Massimo Vanzi, Giovanna Mura, G. Martines:
  Further improvements of an extended Hakki-Paoli method. 859-863
• 
  Desiree Monti, Matteo Meneghini, Carlo De Santi, Agata Bojarska, Piotr Perlin, Gaudenzio Meneghesso, Enrico Zanoni:
  Impact of dislocations on DLTS spectra and degradation of InGaN-based laser diodes. 864-867
• 
  Nicola Trivellin, Desiree Monti, Carlo De Santi, Matteo Buffolo, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
  Current induced degradation study on state of the art DUV LEDs. 868-872
• 
  Hee Pyung Park, Sang Woo Kim, Joong-Won Shin, Won-Ju Cho, Jong Tae Park:
  Effects of the compositional ratios of sputtering target on the device performance and instability in amorphous InGaZnO thin film transistors. 873-877
• 
  Marco Buonomo, Lorenzo Torto, Marco Barbato, Nicola Wrachien, Antonio Rizzo, Suren A. Gevorgyan, Frederik C. Krebs, Andrea Cester:
  Analysis of the effects of voltage pulses on P3HT: PCBM polymeric solar cells by means of TLP technique. 878-881
• 
  Marco Buonomo, Nicola Wrachien, Nicolò Lago, Giuseppe Cantarella, Andrea Cester:
  Effects of stair case gate bias stress in IGZO/Al₂O₃ flexible TFTs. 882-886
• 
  N. Renso, Matteo Buffolo, Carlo De Santi, Matteo Ronzani, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
  Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress. 887-890

Extreme Environments and Radiation

• 
  Jinshun Bi, Yuan Duan, Kai Xi, Bo Li:
  Total ionizing dose and single event effects of 1 Mb HfO₂-based resistive-random-access memory. 891-897
• 
  Iuri Albandes Cunha Gomes, Alejandro Serrano-Cases, Mayler G. A. Martins, Antonio Martínez-Álvarez, Sergio Cuenca-Asensi, Fernanda Lima Kastensmidt:
  Design of approximate-TMR using approximate library and heuristic approaches. 898-902
• 
  Jose Isaza-Gonzalez, Felipe Restrepo-Calle, Antonio Martínez-Álvarez, Sergio Cuenca-Asensi:
  SHARC: An efficient metric for selective protection of software against soft errors. 903-908
• 
  Haibin Wang, Xixi Dai, Yangsheng Wang, Issam Nofal, Li Cai, Zicai Shen, Wanxiu Sun, Jinshun Bi, Bo Li, Gang Guo, Li Chen, Sang H. Baeg:
  A single event upset tolerant latch design. 909-913
• 
  M. Girard, Tristan Dubois, Patrick Hoffmann, Geneviève Duchamp:
  Effects of HPEM stress on GaAs low-noise amplifier from circuit to component scale. 914-919
• 
  Ygor Q. Aguiar, Frederic Wrobel, Jean-Luc Autran, Paul Leroux, Frédéric Saigné, Antoine D. Touboul, Vincent Pouget:
  Analysis of the charge sharing effect in the SET sensitivity of bulk 45 nm standard cell layouts under heavy ions. 920-924
• 
  Manuel Peña-Fernandez, Almudena Lindoso, Luis Entrena, Mario García-Valderas, S. Philippe, Yolanda Morilla, Pedro Martín-Holgado:
  PTM-based hybrid error-detection architecture for ARM microprocessors. 925-930
• 
  Marcio Gonçalves, Mateus Saquetti, José Rodrigo Azambuja:
  Evaluating the reliability of a GPU pipeline to SEU and the impacts of software-based and hardware-based fault tolerance techniques. 931-935
• 
  Sarah Azimi, Luca Sterpone, Boyang Du, Luca Boragno:
  On the analysis of radiation-induced Single Event Transients on SRAM-based FPGAs. 936-940
• 
  Carmine Abbate, Giovanni Busatto, S. Mattiazzo, Annunziata Sanseverino, L. Silvestrin, D. Tedesco, Francesco Velardi:
  Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation. 941-945
• 
  Bo Li, Yunbo Huang, Ling Yang, Qingzhu Zhang, Zhongshan Zheng, Binhong Li, Huiping Zhu, Jianhui Bu, Huaxiang Yin, Jiajun Luo, Zhengsheng Han, Haibin Wang:
  Process variation dependence of total ionizing dose effects in bulk nFinFETs. 946-951
• 
  Qingkui Yu, Yi Sun, Zheng Li, Bo Mei, Xiaoliang Li, He Lv, Pengwei Li, Min Tang:
  Experimental and simulation study of the correlation between displacement damage and incident proton energy for GaAs devices. 952-956
• 
  C. Kawahara, Y. Wada, S. Kinouchi, H. Kobayashi:
  Non-destructive estimation method on cosmic ray ruggedness of power semiconductors using repetitive monitoring technique. 957-960
• 
  Aleksandr S. Petrov, Konstantin I. Tapero, Viktor N. Ulimov, A. M. Chlenov:
  Impact of elevated temperature applied during low dose rate irradiation on the degradation of BiCMOS operational amplifiers. 961-964
• 
  Nilson Maciel, Elaine Crespo Marques, Lirida A. B. Naviner, Hao Cai:
  Single-event transient effects on dynamic comparator in 28 nm FDSOI CMOS technology. 965-968
• 
  Binhong Li, Yang Huang, Jianfei Wu, Yunbo Huang, Bo Li, Qingzhu Zhang, Ling Yang, Fayu Wan, Jiajun Luo, Zhengsheng Han, Huaxiang Yin:
  Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment. 969-973
• 
  Hoang T. Nguyen, Axel Rodriguez, Frederic Wrobel, Alain Michez, Francoise Bezerra, Nathalie Chatry, Benjamin Vandevelde:
  TCAD simulation of radiation-induced leakage current in 1T1C SDRAM. 974-978
• 
  Jian Wang, Binhong Li, Yang Huang, Kai Zhao, Fang Yu, Qiwen Zheng, Qi Guo, Liewei Xu, J. Gao, X. Cai, Y. Cui:
  The total ionizing dose response of leading-edge FDSOI MOSFETs. 979-983
• 
  Moustafa Zerarka, Olivier Crépel:
  Radiation robustness of normally-off GaN/HEMT power transistors (COTS). 984-991
• 
  Ying Pang, Mauro Ciappa:
  Charge and energy deposition in thick silicon depletion layers by environmental ionizing radiation and terrestrial cosmic rays. 992-997

Renewable Energies Reliability

• 
  Wonwook Oh, Soo Hyun Bae, Donghwan Kim, Nochang Park:
  Initial detection of potential-induced degradation using dark I-V characteristics of crystalline silicon photovoltaic modules in the outdoors. 998-1002
• 
  Ariya Sangwongwanich, Dao Zhou, Elizaveta Liivik, Frede Blaabjerg:
  Mission profile resolution impacts on the thermal stress and reliability of power devices in PV inverters. 1003-1007
• 
  Bjørn Rannestad, Peter Nielsen, Stig Munk-Nielsen, Kristian Gadgaard, Søren Jørgensen:
  Converter monitoring in a wind turbine application. 1008-1013
• 
  S. Ahsan, Kamran Ali Khan Niazi, Hassan Abbas Khan, Yongheng Yang:
  Hotspots and performance evaluation of crystalline-silicon and thin-film photovoltaic modules. 1014-1018
• 
  E. M. S. Brito, Allan Fagner Cupertino, Paula Diaz Reigosa, Yongheng Yang, Victor Flores Mendes, Heverton Augusto Pereira:
  Impact of meteorological variations on the lifetime of grid-connected PV inverters. 1019-1024
• 
  Fabio Ricco Galluzzo, A. Scuto, Cosimo Gerardi, A. Battaglia, Andrea Canino, Salvatore Lombardo:
  Performance increase of tandem amorphous/microcrystalline Si PV devices under variable illumination and temperature conditions. 1025-1029
• 
  Saeed Peyghami, Pooya Davari, Huai Wang, Frede Blaabjerg:
  System-level reliability enhancement of DC/DC stage in a single-phase PV inverter. 1030-1035
• 
  Ionut Vernica, Huai Wang, Frede Blaabjerg:
  Uncertainty analysis of capacitor reliability prediction due to uneven thermal loading in photovoltaic applications. 1036-1041
• 
  Muhammad Tariq, Saad A. Butt, Hassan Abbas Khan:
  Impact of module and inverter failures on the performance of central-, string-, and micro-inverter PV systems. 1042-1046
• 
  Jianhua Qin, Li Wang, Shanshui Yang, Rui Huang:
  The effect of solar cell shunt resistance change on the bus voltage ripple in spacecraft power system. 1047-1050
• 
  Ranjith Kumar Gatla, Wei Chen, Guorong Zhu, Dingjun Zeng, Ramchander Nirudi:
  Lifetime estimation of modular cascaded H-bridge MLPVI for grid-connected PV systems considering mission profile. 1051-1056
• 
  Guoliang Yang, Chuntian Fu, Haitao Yi, Chunhua Chai, Bingxu Huang, Shuai Hao, Zhe Chen:
  Direct power control of three-level NPC grid-connected system combined with fault-tolerant technology. 1057-1062
• 
  Renata Oliveira de Sousa, Joao Victor Matos Farias, Allan Fagner Cupertino, Heverton Augusto Pereira:
  Life consumption of a MMC-STATCOM supporting wind power plants: Impact of the modulation strategies. 1063-1070
• 
  R. C. de Barros, E. M. S. Brito, Giovani G. Rodrigues, Victor Flores Mendes, Allan Fagner Cupertino, Heverton Augusto Pereira:
  Lifetime evaluation of a multifunctional PV single-phase inverter during harmonic current compensation. 1071-1076
• 
  Paolo Cova, Nicola Delmonte, Massimo Lazzaroni:
  Photovoltaic plant maintainability optimization and degradation detection: Modelling and characterization. 1077-1082

Modeling for Reliability

• 
  Paul Pfäffli, Hiu Yung Wong, X. Xu, Luca Silvestri, X. W. Lin, T. Yang, Ravi Tiwari, Souvik Mahapatra, Steve Motzny, Victor Moroz, Terry Ma:
  TCAD modeling for reliability. 1083-1089
• 
  Susanna Reggiani, Mattia Rossetti, Antonio Gnudi, Andrea Natale Tallarico, Antonio Molfese, Stefano Manzini, Riccardo Depetro, Giuseppe Croce, Enrico Sangiorgi, Claudio Fiegna:
  TCAD investigation on hot-electron injection in new-generation technologies. 1090-1093
• 
  Susanna Reggiani, Luigi Balestra, Antonio Gnudi, Elena Gnani, Giorgio Baccarani, J. Dobrzynska, J. Vobecký, C. Tosi:
  TCAD study of DLC coatings for large-area high-power diodes. 1094-1097
• 
  Yi Liu, Ping Liu, Huai Wang, Meng Huang, Xiaoming Zha:
  Two-thermal-states model predictive control for IGBT in three-phase inverter. 1098-1102
• 
  Tommaso Cilento, Chan-Su Yun, Arsen Terterian, Chang Hwi Lee, Jung Eon Moon, Si Woo Lee, Hyoungcheol Kwon, Manho Seung, Seokkiu Lee:
  Investigation of layout effects in diode-triggered SCRs under very-fast TLP stress through full-size, calibrated 3D TCAD simulation. 1103-1107
• 
  M. Balmont, Isabelle Bord-Majek, B. Poupard, Laurent Béchou, Yves Ousten:
  Highlighting two integration technologies based on vias: Through silicon vias and embedded components into PCB. Strengths and weaknesses for manufacturing and reliability. 1108-1112
• 
  S. A. Letz, A. Farooghian, F. B. Simon, Andreas Schletz:
  Modeling the rate-dependent inelastic deformation behavior of porous polycrystalline silver films. 1113-1117
• 
  Yanfeng Shen, Huai Wang, Frede Blaabjerg:
  Thermal resistance modelling and design optimization of PCB vias. 1118-1123
• 
  Michael David Hook, Stevan Hunter, Michael Mayer:
  Deriving lifetime predictions for wire bonds at high temperatures. 1124-1129
• 
  Jorgue Daniel Aguirre Morales, François Marc, A. Bensoussan, A. Durier:
  Simulation and modelling of long term reliability of digital circuits implemented in FPGA. 1130-1134
• 
  Mohsen Akbari, Amir Sajjad Bahman, Paula Diaz Reigosa, Francesco Iannuzzo, Mohammad Tavakoli Bina:
  Thermal modeling of wire-bonded power modules considering non-uniform temperature and electric current interactions. 1135-1140
• 
  Jun Yang, Xiao Shi, Jianchun Zhang:
  A new processing method for accelerated degradation data based on quantile regression and pseudo-failure lifetime. 1141-1145
• 
  Jingge Hu, Meng Huang, Yi Liu, Xiaoming Zha:
  Transient junction temperature estimation of IGBT using improved thermal model. 1146-1150
• 
  Zhipeng Ye, Jiawei Zhu, Qian Li, Bing Mo, Baimao Lei, Yaqiu Li, Chunhui Wang, Chuangmian Huang:
  A novel method of reliability-centered process optimization for additive manufacturing. 1151-1156
• 
  Hongpeng Liu, Wentao Wu, Hui Wu, Guihua Liu, Panbao Wang, Wei Wang:
  Lifetime prediction of a modified Y-source inverter in photo-voltaic application. 1157-1163
• 
  Tao Zheng, Meng Huang, Yi Liu, Xiaoming Zha:
  Reliability model of bond wire fatigue for IGBT in MMC with system redundancy consideration. 1164-1167
• 
  Daniela Cavallaro, Rosario Greco, Gaetano Bazzano:
  Effect of solder material thickness on Power MOSFET reliability by Electro-thermo-Mechanical Simulations. 1168-1171
• 
  S. Pin, Alexandrine Guédon-Gracia, Jean-Yves Delétage, Hélène Frémont:
  Creep measurement and choice of creep laws for BGA assemblies' reliability simulation. 1172-1176
• 
  S. Bahrebar, Dao Zhou, Sima Rastayesh, Huai Wang, Frede Blaabjerg:
  Reliability assessment of power conditioner considering maintenance in a PEM fuel cell system. 1177-1182
• 
  F. B. Simon, S. A. Letz, Andreas Schletz:
  Influence of the pulse length and temperature swing on the relative lifetime estimation for sintered/soldered chip-on-substrate samples via FE-simulation of power cycles. 1183-1188

Reliability in Traction Applications

• 
  Yongquan Sun, Xueling Hao, Michael G. Pecht, Yapeng Zhou:
  Remaining useful life prediction for lithium-ion batteries based on an integrated health indicator. 1189-1194
• 
  Ding Feng, Sheng Lin, Xiaojun Sun, Zhengyou He:
  Reliability assessment for traction power supply system based on Quantification of Margins and Uncertainties. 1195-1200
• 
  Ji Shu, Shunliang Wang, Tianqi Liu, Ning Jiao, Yanbo Wang:
  A novel current-limiting circuit based on resistive-type SFCL for fault in DC power system. 1201-1205
• 
  Jinsong Yu, Weiqi Tang, Diyin Tang, Jingjing Liu:
  A prediction method for discharge voltage of lithium-ion batteries under unknown dynamic loads. 1206-1211
• 
  Eduardo Redondo-Iglesias, Pascal Venet, Serge Pelissier:
  Calendar and cycling ageing combination of batteries in electric vehicles. 1212-1215
• 
  Jinhao Meng, Lei Cai, Guangzhao Luo, Daniel-Ioan Stroe, Remus Teodorescu:
  Lithium-ion battery state of health estimation with short-term current pulse test and support vector machine. 1216-1220
• 
  Mingyao Ma, Rui Wang, Fei Li, Jianing Wang, Shuying Yang:
  A fault-tolerant control strategy for switched reluctance motor drive for electric vehicles under short-fault condition. 1221-1225
• 
  Mingyao Ma, Zhiyu Sun, Ye Wang, Jianing Wang, Rui Wang:
  Method of junction temperature estimation and over temperature protection used for electric vehicle's IGBT power modules. 1226-1230
• 
  Yuan Ci Zhang, Olivier Briat, Jean-Yves Delétage, Cyril Martin, Nicolas Chadourne, Jean-Michel Vinassa:
  Efficient state of health estimation of Li-ion battery under several ageing types for aeronautic applications. 1231-1235
• 
  Sai Tang, Xin Yin, Daming Wang, Chao Zhang, Zhikang Shuai, Xin Yang, Zheng John Shen, Jun Wang:
  Detection and identification of power switch failures for fault-tolerant operation of flying capacitor Buck-boost converters. 1236-1241
• 
  Peng Fan, Shoudao Huang, Huai Wang, Derong Luo, Huimin Li, Meidi Sun:
  Fundamental frequency region-based thermal control of power electronics modules in high power motor drive. 1242-1246
• 
  Ping Liu, Huai Wang, Yi Liu, Frede Blaabjerg:
  Thermal stress reduction of quasi-Z source inverter drive by model predictive control. 1247-1250
• 
  Ana-Irina Stroe, Vaclav Knap, Daniel-Ioan Stroe:
  Comparison of lithium-ion battery performance at beginning-of-life and end-of-life. 1251-1255
• 
  Dan Zhang, Jianguo Jiang:
  A reliable speed controller for suppressing low frequency concussion of electric vehicle. 1256-1260
• 
  Tiezhou Wu, Zhihao Cheng, Jiasheng Zhang, Zhangqing He:
  A PCH strong tracking control strategy for power coordinated allocation of Li-SC HESS. 1261-1267
• 
  Zhao Liu, Shuai Wang, Zhendong Ji, Xiaopeng Ji, Yunyun Xie:
  A novel fault-tolerant control for battery-energy-storage system based on cascaded multilevel converter with battery/BMS failure. 1268-1273
• 
  Fei Mei, Liu Ning, Miao Huiyu, Pan Yi, Haoyuan Sha, Jianyong Zheng:
  On-line fault diagnosis model for locomotive traction inverter based on wavelet transform and support vector machine. 1274-1280
• 
  Shuai Lin, Xiaochun Fang, Fei Lin, Zhongping Yang, Xiaofan Wang:
  Reliability of rail transit traction drive system-A review. 1281-1285
• 
  Guoning Xu, Xiaowei Du, Zhaojie Li, Xiaojun Zhang, Minxin Zheng, Ying Miao, Yang Gao, Qianshi Liu:
  Reliability design of battery management system for power battery. 1286-1292
• 
  Hong Li, Zhongya Guo, Chen Liu, Trillion Q. Zheng:
  An extensible stability analysis method in time domain for cascaded DC-DC converters in electrical vehicles. 1293-1299
• 
  Jingda Gu, Xiaofeng Yang, Trillion Q. Zheng:
  Influence factors analysis of rail potential in urban rail transit. 1300-1304
• 
  Michel Piton, Bertrand Chauchat, Jean-François Serviere:
  Implementation of direct Chip junction temperature measurement in high power IGBT module in operation - Railway traction converter. 1305-1310
• 
  Ramin Parvari, Mostafa Zarghani, Shahriyar Kaboli:
  RCD snubber design based on reliability consideration: A case study for thermal balancing in power electronic converters. 1311-1315
• 
  B. Sivasankari, Ahilan Appathurai, R. Jothin, A. Jasmine Gnana Malar:
  Reliable N sleep shuffled phase damping design for ground bouncing noise mitigation. 1316-1321