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2020 – today
- 2024
[j21]Quan Nguyen-Gia
, Hyungcheol Shin:
Modeling of Threshold Voltage Shift by Neighboring Transistors for Macaroni Channel MOSFETs in Series. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 43(1): 324-327 (2024)- 2023
- [j20]Hyungjun Jo, Jongwoo Kim, Hyungcheol Shin:
A Novel Read Scheme Using GIDL Current to Suppress Read Disturbance in 3-D nand Flash Memories. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 42(12): 5151-5155 (2023) - 2022
- [j19]Jongwoo Kim, Hyungjun Jo, Yonggyu Cho, Hyunyoung Shim, Jaesung Sim, Hyungcheol Shin:
Investigation of endurance degradation for 3-D charge trap NAND flash memory with bandgap-engineered tunneling oxide. IEICE Electron. Express 19(24): 20220465 (2022) - 2021
- [j18]Sangmin Ahn, Hyungcheol Shin:
Optimizing read disturb phenomenon with new read scheme by partial-boosting channel in 3-D NAND Flash memories. IEICE Electron. Express 18(19): 20210299 (2021) - 2020
- [j17]Dong Chan Lee, Jang Kyu Lee, Hyungcheol Shin:
Machine learning model for predicting threshold voltage by taper angle variation and word line position in 3D NAND flash memory. IEICE Electron. Express 17(22): 20200345 (2020) - [j16]Dong Chan Lee, Hyungcheol Shin:
Transient program operation model considering distribution of electrons in 3D NAND flash memories. IEICE Electron. Express 17(23): 20200335 (2020) - [j15]Ilho Myeong, Juhyun Kim, Hyungwoo Ko, Ickhyun Song, Yongseok Kim, Hyungcheol Shin:
A Simple and Accurate Modeling Method of Channel Thermal Noise Using BSIM4 Noise Models. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 39(12): 4351-4358 (2020) - [c7]Sungyong Shin, Changmok Oh, Hyungcheol Shin:
Tactile Tone System: A Wearable Device to Assist Accuracy of Vocal Pitch in Cochlear Implant Users. ASSETS 2020: 81:1-81:3 - [c6]Changbeom Woo, Shinkeun Kim, Jaeyeol Park, Hyungcheol Shin, Haesoo Kim, Gil-Bok Choi, Moon-Sik Seo, Keum Hwan Noh:
Modeling of Charge Failure Mechanisms during the Short Term Retention Depending on Program/Erase Cycle Counts in 3-D NAND Flash Memories. IRPS 2020: 1-6 - [c5]Hongjae Jang, Hyungcheol Shin, Jaemin Lee, Changwon Yoo, Kanghyup Chun, Ilhyun Yun:
28.2 A 51dB-SNR 120Hz-Scan-Rate 32×18 Segmented-VCOM LCD In-Cell Touch-Display-Driver IC with 96-Channel Compact Shunt-Sensing Self-Capacitance Analog Front-End. ISSCC 2020: 432-434
2010 – 2019
- 2014
- [j14]Dyukyoung Moon, Hyunseul Lee, Changhwan Shin, Hyungcheol Shin:
Analysis and modeling for random telegraph noise of GIDL current in saddle MOSFET for DRAM application. IEICE Electron. Express 11(13): 20140468 (2014) - [c4]Kyunghwan Lee, Duckseoung Kang, Hyungcheol Shin, Sangjin Kwon, Shinhyung Kim, Yuchul Hwang:
Analysis of failure mechanisms in erased state of sub 20-nm NAND Flash memory. ESSDERC 2014: 58-61 - [c3]Hongjae Jang, Hyungcheol Shin, Seunghoon Ko, Ilhyun Yun, Kwyro Lee:
12.5 2D Coded-aperture-based ultra-compact capacitive touch-screen controller with 40 reconfigurable channels. ISSCC 2014: 218-219 - 2013
- [j13]Sang Wan Kim, Woo Young Choi, Min-Chul Sun, Hyun Woo Kim, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park:
L-Shaped Tunneling Field-Effect Transistors for Complementary Logic Applications. IEICE Trans. Electron. 96-C(5): 634-638 (2013) - [c2]Hyungcheol Shin, Seunghoon Ko, Hongjae Jang, Ilhyun Yun, Kwyro Lee:
A 55dB SNR with 240Hz frame scan rate mutual capacitor 30×24 touch-screen panel read-out IC using code-division multiple sensing technique. ISSCC 2013: 388-389 - 2011
- [j12]Myounggon Kang, Ki-Whan Song, Byung-Gook Park, Hyungcheol Shin:
The novel SCR-based ESD protection with low triggering and high holding voltages. Microelectron. J. 42(6): 837-839 (2011) - 2010
- [j11]Seongjae Cho, Jung Hoon Lee, Yoon Kim, Jang-Gn Yun, Hyungcheol Shin, Byung-Gook Park:
Simulation Study on Dependence of Channel Potential Self-Boosting on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Devices. IEICE Trans. Electron. 93-C(5): 596-601 (2010)
2000 – 2009
- 2009
- [j10]Seongjae Cho, Jung Hoon Lee, Gil Sung Lee, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park:
Design Consideration for Vertical Nonvolatile Memory Device Regarding Gate-Induced Barrier Lowering (GIBL). IEICE Trans. Electron. 92-C(5): 620-626 (2009) - [j9]Jongwook Jeon, Ickhyun Song, Jong Duk Lee, Byung-Gook Park, Hyungcheol Shin:
Application of the Compact Channel Thermal Noise Model of Short Channel MOSFETs to CMOS RFIC Design. IEICE Trans. Electron. 92-C(5): 627-634 (2009) - [j8]Yoon Kim, Seongjae Cho, Gil Sung Lee, Il-Han Park, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park:
3-Dimensional Terraced NAND (3D TNAND) Flash Memory-Stacked Version of Folded NAND Array. IEICE Trans. Electron. 92-C(5): 653-658 (2009) - [j7]Doo-Hyun Kim, Il-Han Park, Seongjae Cho, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park:
Simulation of Retention Characteristics in Double-Gate Structure Multi-Bit SONOS Flash Memory. IEICE Trans. Electron. 92-C(5): 659-663 (2009) - 2008
- [j6]Seongjae Cho, Il-Han Park, Jung Hoon Lee, Jang-Gn Yun, Doo-Hyun Kim, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park:
Establishing Read Operation Bias Schemes for 3-D Pillar Structure Flash Memory Devices to Overcome Paired Cell Interference (PCI). IEICE Trans. Electron. 91-C(5): 731-735 (2008) - [j5]Hochul Lee, Youngchang Yoon, Ickhyun Song, Hyungcheol Shin:
FN Stress Induced Degradation on Random Telegraph Signal Noise in Deep Submicron NMOSFETs. IEICE Trans. Electron. 91-C(5): 776-779 (2008) - 2007
- [j4]Hochul Lee, Youngchang Yoon, Seongjae Cho, Hyungcheol Shin:
Accurate Extraction of the Trap Depth from RTS Noise Data by Including Poly Depletion Effect and Surface Potential Variation in MOSFETs. IEICE Trans. Electron. 90-C(5): 968-972 (2007) - [j3]Seongjae Cho, Jang-Gn Yun, Il-Han Park, Jung Hoon Lee, Jong Pil Kim, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park:
Analyses on Current Characteristics of 3-D MOSFET Determined by Junction Doping Profiles for Nonvolatile Memory Devices. IEICE Trans. Electron. 90-C(5): 988-993 (2007) - 2005
- [j2]Kwangseok Han, Joonho Gil, Seong-Sik Song, Jeonghu Han, Hyungcheol Shin, Choong-Ki Kim, Kwyro Lee:
Complete high-frequency thermal noise modeling of short-channel MOSFETs and design of 5.2-GHz low noise amplifier. IEEE J. Solid State Circuits 40(3): 726-735 (2005) - 2003
- [j1]Minkyu Je, Jeonghu Han, Hyungcheol Shin, Kwyro Lee:
A simple four-terminal small-signal model of RF MOSFETs and its parameter extraction. Microelectron. Reliab. 43(4): 601-609 (2003)
1990 – 1999
- 1998
- [c1]Joonho Gil, Minkyu Je, Jongho Lee, Hyungcheol Shin:
A high speed and low power SOL inverter using active body-bias. ISLPED 1998: 59-63
Coauthor Index
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