default search action

combined dblp search
author search
venue search
publication search

ask others

"4-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as ..."

Fengben Xi et al. (2021)

> Home

Details and statistics

DOI: 10.1109/ESSDERC53440.2021.9631818

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-06

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/essderc/XiHTGZ21
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/essderc/XiHTGZ21
Fengben Xi, Yi Han, Andreas T. Tiedemann, Detlev Grützmacher, Qing-Tai Zhao:
4-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as Artificial Synapses. ESSDERC 2021: 291-294

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.

Note: This service is not intended for secure transactions such as banking, social media, email, or purchasing. Use at your own risk. We assume no liability whatsoever for broken pages.

Pfad - The Proxy pFad of © 2024 Garber Painting. All rights reserved.