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ORCIDMorteza Gholipour
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2020 – today
- 2022
[j18]Erfan Abbasian
, Elangovan Mani, Morteza Gholipour, Mehrzad Karamimanesh, Mohd Sahid, Adil Zaidi:
A Schmitt-Trigger-Based Low-Voltage 11 T SRAM Cell for Low-Leakage in 7-nm FinFET Technology. Circuits Syst. Signal Process. 41(6): 3081-3105 (2022)- [j17]Erfan Abbasian, Morteza Gholipour:
Design of a Highly Stable and Robust 10T SRAM Cell for Low-Power Portable Applications. Circuits Syst. Signal Process. 41(10): 5914-5932 (2022) - [j16]Behnam Vakili, Morteza Gholipour:
Enhanced overloaded code division multiple access for network on chip. IET Comput. Digit. Tech. 16(2-3): 45-63 (2022) - [j15]Erfan Abbasian, Morteza Gholipour:
A low-leakage single-bitline 9T SRAM cell with read-disturbance removal and high writability for low-power biomedical applications. Int. J. Circuit Theory Appl. 50(5): 1537-1556 (2022) - [j14]Erfan Abbasian, Morteza Gholipour:
Improved read/write assist mechanism for 10-transistor static random access memory cell. Int. J. Circuit Theory Appl. 50(10): 3642-3660 (2022) - [j13]Erfan Abbasian, Shilpi Birla, Morteza Gholipour:
Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM. Microelectron. J. 123: 105427 (2022) - [j12]Erfan Abbasian, Farzaneh Izadinasab, Morteza Gholipour:
A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins. IEEE Trans. Circuits Syst. I Regul. Pap. 69(4): 1606-1616 (2022) - 2021
- [j11]Erfan Abbasian, Morteza Gholipour:
Single-ended half-select disturb-free 11T static random access memory cell for reliable and low power applications. Int. J. Circuit Theory Appl. 49(4): 970-989 (2021) - [j10]Erfan Abbasian, Morteza Gholipour, Farzaneh Izadinasab:
Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design. Int. J. Circuit Theory Appl. 49(11): 3630-3652 (2021) - [j9]Farzaneh Izadinasab, Morteza Gholipour:
Half-select disturb-free single-ended 9-transistor SRAM cell with bit-interleaving scheme in TMDFET technology. Microelectron. J. 113: 105100 (2021) - 2020
- [j8]Ehsan Mahmoodi, Morteza Gholipour:
Design space exploration of low-power flip-flops in FinFET technology. Integr. 75: 52-62 (2020)
2010 – 2019
- 2019
- [j7]Arash Rezaei, Bahram Azizollah-Ganji, Morteza Gholipour:
Nanoscale field effect diode (FED) with improved speed and I ON/I OFF ratio. IET Circuits Devices Syst. 13(3): 309-313 (2019) - 2018
- [j6]Morteza Gholipour, Ying-Yu Chen, Deming Chen:
Compact Modeling to Device- and Circuit-Level Evaluation of Flexible TMD Field-Effect Transistors. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 37(4): 820-831 (2018) - 2016
- [j5]Morteza Gholipour, Ying-Yu Chen, Amit Sangai, Nasser Masoumi, Deming Chen:
Analytical SPICE-Compatible Model of Schottky-Barrier-Type GNRFETs With Performance Analysis. IEEE Trans. Very Large Scale Integr. Syst. 24(2): 650-663 (2016) - [c7]Ying-Yu Chen, Morteza Gholipour, Deming Chen:
Flexible transition metal dichalcogenide field-effect transistors: A circuit-level simulation study of delay and power under bending, process variation, and scaling. ASP-DAC 2016: 761-768 - 2014
- [j4]Morteza Gholipour, Nasser Masoumi:
Graphene nanoribbon crossbar architecture for low power and dense circuit implementations. Microelectron. J. 45(11): 1533-1541 (2014) - [c6]Morteza Gholipour, Ying-Yu Chen, Amit Sangai, Deming Chen:
Highly accurate SPICE-compatible modeling for single- and double-gate GNRFETs with studies on technology scaling. DATE 2014: 1-6 - 2013
- [j3]Morteza Gholipour, Nasser Masoumi:
Design investigation of nanoelectronic circuits using crossbar-based nanoarchitectures. Microelectron. J. 44(3): 190-200 (2013) - [c5]Ying-Yu Chen, Amit Sangai, Morteza Gholipour, Deming Chen:
Graphene nano-ribbon field-effect transistors as future low-power devices. ISLPED 2013: 151-156 - [c4]Ying-Yu Chen, Amit Sangai, Morteza Gholipour, Deming Chen:
Schottky-barrier-type Graphene Nano-Ribbon Field-Effect Transistors: A study on compact modeling, process variation, and circuit performance. NANOARCH 2013: 82-88 - 2012
- [j2]Morteza Gholipour, Nasser Masoumi:
Efficient inclusive analytical model for delay estimation of multi-walled carbon nanotube interconnects. IET Circuits Devices Syst. 6(4): 252-259 (2012) - 2011
- [c3]Morteza Gholipour:
Design and Implementation of Lifting Based Integer Wavelet Transform for Image Compression Applications. DICTAP (1) 2011: 161-172 - [c2]Morteza Gholipour, Nasser Masoumi:
A comparative study of nanowire crossbar and MOSFET logic implementations. EUROCON 2011: 1-4
2000 – 2009
- 2006
- [j1]Kambiz Shojaee, Morteza Gholipour, Ali Afzali-Kusha, Mehrdad Nourani:
Comparative study of asynchronous pipeline design methods. IEICE Electron. Express 3(8): 163-171 (2006) - 2005
- [c1]Morteza Gholipour, Hamid Shojaee, Ali Afzali-Kusha, Ahmad Khademzadeh, Mehrdad Nourani:
An efficient model for performance analysis of asynchronous pipeline design methods. ISCAS (5) 2005: 5234-5237
Coauthor Index
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