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"Highly manufacturable Self-Aigned Direct Backside Contact (SA-DBC) and ..."

Jaehyun Park et al. (2024)

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DOI: 10.1109/VLSITECHNOLOGYANDCIR46783.2024.10631556

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-17

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  - conf/vlsit/ParkPHYKPPYJYBP24
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  - https://dblp.org/rec/conf/vlsit/ParkPHYKPPYJYBP24
Jaehyun Park, Juhun Park, Kyuman Hwang, Jinchan Yun, Dahye Kim, Sungil Park, Jejune Park, Jinwook Yang, Jae Won Jeong, Chuljin Yun, Jinho Bae, Sam Park, Daihong Huh, Sanghyeon Kim, Seungeun Baek, Suk Yang, Inhae Zoh, Junghan Lee, Tae-sun Kim, Younsu Ha, Sun-Jung Lee, Sang Wuk Park, Bong Jin Kuh, Daewon Ha, Sangjin Hyun, Sujin Ahn, Jaihyuk Song:
Highly manufacturable Self-Aigned Direct Backside Contact (SA-DBC) and Backside Gate Contact (BGC) for 3-dimensional Stacked FET at 48nm gate pitch. VLSI Technology and Circuits 2024: 1-2

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