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Implications of Field Plate HEMT Towards Power Performance at Microwave X - Band

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VLSI Design and Test (VDAT 2022)

Part of the book series: Communications in Computer and Information Science ((CCIS,volume 1687))

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Abstract

This work investigates the implications of field plate architectures on the power performance of AlGaN/GaN HEMTs at Microwave X – Band. The spread of the output power across the unwanted harmonics is investigated for different field plate lengths and physical insights are drawn on the basis of GaN HEMT’s intrinsic and extrinsic parameters. The analysis is based on DC and RF calibrated simulation decks realized in Silvaco’s Atlas Tool. The comparisons drawn on the basis of POUT at fundamental, second, and third order harmonics reveal the trade – offs between the device breakdown and its linearity and distortion at the RF band.

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Acknowledgement

The authors would like to acknowledge the Star Scheme Program funded by the Department of Biotechnology, Ministry of Science and Technology, Government of India at DDUC, DU; IASc – NASI SRFP 2021 Reg. No.: ENGS972; and DU IoE Grant Ref. No.: IoE/2021/12/FRP for providing the financial assistance. This work was also supported by Delhi University IoE Grant Ref. No. (IoE-DU/MRP/2022/056); Solid State Physics Laboratory (SSPL) CARS Project No.: 1115/TS/SPL/CARS-95/2022 funded by Defence Research & Development Organization (DRDO); and DST-SERB Project Ref. No.: SPG/2021/00306.

Author information

Authors and Affiliations

  1. Department of Electronic Science, University of Delhi South Campus, New Delhi, India

    Khushwant Sehra & Mridula Gupta

  2. Department of Electrical Engineering, Indian Institute of Technology Palakkad, Palakkad, India

    Jeffin Shibu

  3. Solid State Physics Laboratory, Defence Research and Development Organization, New Delhi, India

    Meena Mishra & D. S. Rawal

  4. Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi, New Delhi, India

    Manoj Saxena

Authors
  1. Khushwant Sehra
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  5. D. S. Rawal
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  6. Manoj Saxena
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Correspondence to Manoj Saxena .

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Editors and Affiliations

  1. Department of Electrical Engineering, Indian Institute of Technology Jammu, Jammu, India

    Ambika Prasad Shah

  2. Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, India

    Sudeb Dasgupta

  3. Department of Electronics Engineering, Sardar Vallabhbhai National Institute of Technology Surat, Surat, India

    Anand Darji

  4. Department of Computer Science and Engineering, Indian Institute of Technology Tirupati, Tirupati, India

    Jaynarayan Tudu

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Sehra, K., Shibu, J., Mishra, M., Gupta, M., Rawal, D.S., Saxena, M. (2022). Implications of Field Plate HEMT Towards Power Performance at Microwave X - Band. In: Shah, A.P., Dasgupta, S., Darji, A., Tudu, J. (eds) VLSI Design and Test. VDAT 2022. Communications in Computer and Information Science, vol 1687. Springer, Cham. https://doi.org/10.1007/978-3-031-21514-8_6

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  • DOI: https://doi.org/10.1007/978-3-031-21514-8_6

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