Conclusion
This study proposed and fabricated a β-Ga2O3 SBD-based rectifier with embedded microchannels in a ceramic substrate for active cooling for the first time. Experimental results demonstrate that this technique can increase the output power from 3.2 to 21.3 W, consuming only 0.9 mW of pump power. The achievements in this work indicate that embedded cooling offers a powerful technique to suppress the thermal effects on Ga2O3 devices and circuits, thereby improving their electrical performance.
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Acknowledgements
This work was supported in part by National Natural Science Foundation of China (Grant Nos. 61974115, U2241220), National Key Research and Development Program of China (Grant No. 2021YFB3602404), Fund of National Innovation Center of Radiation Application (Grant No. KFZC2022020401), and Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2023-JC-QN-0669).
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Hong, W., Zhang, C., Zhang, F. et al. Performance improvement of β-Ga2O3 SBD-based rectifier with embedded microchannels in ceramic substrate. Sci. China Inf. Sci. 67, 159404 (2024). https://doi.org/10.1007/s11432-024-3992-8
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DOI: https://doi.org/10.1007/s11432-024-3992-8