Scribd
Upload
64 views2 pages

Equations and Constants 1

This document contains equations relating to semiconductor physics and device characteristics. It includes equations for carrier concentrations, Fermi levels, current density, mobility, and diffusion current. It also summarizes key parameters for silicon such as effective masses, densities of states, and models diode behavior under forward and reverse bias conditions at the edge of the depletion region.

Uploaded by

Kaushik Guha
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
64 views2 pages

Equations and Constants 1

This document contains equations relating to semiconductor physics and device characteristics. It includes equations for carrier concentrations, Fermi levels, current density, mobility, and diffusion current. It also summarizes key parameters for silicon such as effective masses, densities of states, and models diode behavior under forward and reverse bias conditions at the edge of the depletion region.

Uploaded by

Kaushik Guha
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 2

EquationSheet1

eV
6 . 13
8
*
2 2 2 2
4 *
o
n
r r o
n
m
m
h
q m
E
c c c
= =
kT E E
C
F C
e N n
/ ) (
=
kT E E
V
V F
e N p
/ ) (
=
2 / 3
2
*
2
2
(

=
h
kT m
N
n
C
t
np n
i
=
2
*
*
ln
4
3
2
n
p g
F
m
m
kT
E
E + =
2 / 3
2
*
2
2
(
(

=
h
kT m
N
p
V
t
| |(
(
(

+
=
+
kT E E
N N
F D
D D
/ ) ( exp
2
1
1
1
1
+
+ =
A D
N n N p 0
| |(
(
(

+
=

kT E E
N N
A F
A A
/ ) ( exp
4
1
1
1
1
kT E
V C i
g
e N N n
2
=
(


+
=
kT
E E
E f
F
exp 1
1
) (
3
* *
) ( 2 8
) (
h
E E m gm
E N
C n n

=
t
3
* *
) ( 2 8
) (
h
E E m gm
E N
V p p

=
t
R I IV P
2
= =
IR V =
A
L
R

=
L
V
= X
o

1
= kT v m
th
2
3
2
1
2 *
=
2 / 1
2 (

D
s
D
N q
kT
L
c
B
D H
v = X B R
H H
J = X
e N
R
e
H
1
=
X X
*
v
p
p D
m
qt
= = X X
*
v
n
n D
m
qt
= =
X X
*
2
,
v
n
n D drift n
m
nq
nq J
t
o = = = X X
*
2
,
v
p
p D drift p
m
pq
pq J
t
o = = =
p n p n
qp qn o o o + = + =
p n
J J J + =
dx
dn
qD J
n diff n
=
,
dx
dp
qD J
p diff p
=
,
q
kT D
=

|
|
.
|

\
|
=
i
b
i f B
n
N
q
kT
ln | | |
( )
(


=
(


=
kT
q
n
kT
E E
n n
f i
i
i f
i
| |
exp exp
( )
(


=
(


=
kT
q
n
kT
E E
n p
i f
i
f i
i
| |
exp exp
diff n drift n n
J J J
, ,
+ =
diff p drift p p
J J J
, ,
+ =
q
E
i
i
= |
dx
d
i
|
= X
c
| ) (
2
2
x
dx
d
dx
d
net i
= =
X
| | ) ( ) ( ) ( ) (
2
2
x N x N x n x p
q
dx
d
dx
d
A D
+
+ = =
c
| X
c

c
Q
dx x
net
}
= = ) (
1
X
dx
d
qn
dx
dn
qn
kT
dx
d
qn J
fn
n
i
n n
|

|
=
|
|
.
|

\
|
=
dx
d
qp
dx
dp
qp
kT
dx
d
qp J
fp
p
i
p p
|

|
=
|
|
.
|

\
|
+ =
|
|
.
|

\
|
=
i
i fn
n
n
q
kT
ln | |
|
|
.
|

\
|
+ =
i
i fp
n
p
q
kT
ln | |
n n
n
G R
x
J
q t
n
+
c
c
=
c
c 1
p p
p
G R
x
J
q t
p
+
c
c
=
c
c 1
s n
c t =
kT E E
F
e E f
/ ) (
1 ) (

~
kT E E
F
e E f
/ ) (
) (

~
BoltzmannApprox.
E E
F
>>kT
E
F
E>>kT
|
|
.
|

\
|
=
|
|
.
|

\
|
=
|
|
.
|

\
|
=
po
no
no
po
i
D A
bi
n
n
q
kT
p
p
q
kT
n
N N
q
kT
ln ln ln
2
|
c
|
D i
qN
dx
d
=
2
2
c
|
A i
qN
dx
d
=
2
2
c c
|
p A
n D
x
i
x qN
x qN
dx
d
= =
=0
max
X
( )
2 2
max
max
max
d
p n
W
x x
X
X
=
+
= |
( )
D A
D A
d
N qN
N N
W
max
2 | c +
=
app bi
V =| |
max
Forabruptjunction(atequil.):
c
| qax
dx
d
i
=
2
2
c
|
8
2
0
max
qaW
dx
d
x
i
=
=
X
d
W
max max
3
2
X = |
3 / 1
max
12
(

=
qa
W
d
c|
(

=
i
n
aW
q
kT
2
ln
2
max
|
Forlinearjunction(atequil.):
( )
(


=
kT
q
n np
n p
i
| |
exp
2
n p app
V | | =
|
|
.
|

\
|
=
kT
qV
n x n
app
po p p
exp ) (
|
|
.
|

\
|
=
kT
qV
p x p
app
no n n
exp ) (
p p p
D L t =
| |
( )
p
p
app
no no n n
L W
L x W
kT
qV
p p p p
/ sinh
/ ) ( sinh
1 exp

(


|
.
|

\
|
= = A
( ) | | 1 exp = + = kT qV J J J J
app o n p total
Abruptjunction(atnonequil.):
( ) | | 1 exp ) 0 (
2
= kT qV
W N
n qD
J
app
D
i p
p
W N
n qD
J
D
i p
p
2
) 0 ( =
( ) | | 1 exp ) 0 (
2
= kT qV
L N
n qD
J
app
p D
i p
p
p D
i p
p
L N
n qD
J
2
) 0 ( =
LongBase:W>>L
p
ShortBase:W<<L
p
C vac
E E = _
F vac
E E = u
n D p A
x N x N =
d
d
d
W dV
dQ
C
c
=
2 / 2 / W x W for s s
n
x x for s s 0
0 s s x x for
p
Massofanelectron:9.11x10
31
kg
Boltzmannconstant:1.38x10
23
J/K(8.617x10
5
eV/K)
AvogadrosNumber:6.022x10
23
/mole
Permittivityinvacuum:8.85x10
12
F/m
PlancksConstant:6.626x10
34
Js
kT @300K:~26meV
SiProperties:
intrinsiccarrierconcentration:1.45x10
10
cm
3
effectivedensityofstates@E
c
:2.8x10
+19
cm
3
effectivedensityofstates@E
v
:1.04x10
+19
cm
3
electroneffectivemass:0.26m
o
holeeffectivemass:0.386m
o
electronaffinity:4.05eV
( ) ( )
(
(

+ =
n n n A
i n
p p p D
i p
o
L W L N
n qD
L W L N
n qD
J
/ tanh / tanh
2
2
idealdiodeequation
FORWARDbias@edgeofdepletionregion
RVERSEbias@edgeofdepletionregion

You might also like

pFad - Phonifier reborn

Pfad - The Proxy pFad of © 2024 Garber Painting. All rights reserved.

Note: This service is not intended for secure transactions such as banking, social media, email, or purchasing. Use at your own risk. We assume no liability whatsoever for broken pages.


Alternative Proxies:

Alternative Proxy

pFad Proxy

pFad v3 Proxy

pFad v4 Proxy