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Datasheet

The document provides specifications for the 2SC3502 silicon NPN power transistor manufactured by INCHANGE Semiconductor. Key specifications include a collector-emitter breakdown voltage of 200V, applications in ultra-high definition CRT displays and video output, and electrical characteristics such as a DC current gain ranging from 40 to 320 and a current-gain bandwidth product of at least 150MHz.

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38 views2 pages

Datasheet

The document provides specifications for the 2SC3502 silicon NPN power transistor manufactured by INCHANGE Semiconductor. Key specifications include a collector-emitter breakdown voltage of 200V, applications in ultra-high definition CRT displays and video output, and electrical characteristics such as a DC current gain ranging from 40 to 320 and a current-gain bandwidth product of at least 150MHz.

Uploaded by

Mahfudz Fauzy
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor 2SC3502

DESCRIPTION
·Collector–Emitter Breakdown Voltage—
: V(BR)CEO = 200 V
·Complement to Type 2SA1380

APPLICATIONS
·Designed for ultrahigh-definition CRT display, video out-
put applicaitons

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 200 V

VCEO Collector-Emitter Voltage 200 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current-Continuous 0.1 A

ICM Collector Current-Peak 0.2 A

Collector Power Dssipation


1.2
Ta=25℃
PC W
Collector Power Dssipation
5
TC=25℃

Ti Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor 2SC3502

ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 200 V

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞ 200 V

V(BR)EBO Emitter-Base Breakdown Vltage IE= 10μA ; IC= 0 5 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA ;IB= 2mA


B 0.6 V

VBE(sat) Base-Emitter Saturation Voltage IC= 20mA ;IB= 2mA


B 1.0 V

ICBO Collector Cutoff Current VCB= 150V; IE= 0 0.1 μA

IEBO Emitter Cutoff Current VEB= 4V; IC= 0 0.1 μA

hFE DC Current Gain IC= 10m A ; VCE= 10V 40 320

fT Current-Gain—Bandwidth Product IC= 10mA; VCE= 30V; 150 MHz

COB Collector Capacitance IE= 0; VCB= 30V;ftest = 1MHz 1.7 pF

‹ hFE Classifications

C D E F

40-80 60-120 100-200 160-320

isc Website：www.iscsemi.cn

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