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Product Summary Feature: Qualified According To AEC Q101

SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode Logic Level dv / dt rated Product Summary VDS V A drain pin 3 Qualified according to AEC Q101 gate pin1 source pin 2 2 1 VPS05161 Pb-free Yes Yes Tape and Reel Information L6327: 3000 pcs / reel L6433: 10000 ppm / reel Maximum Ratings, at Tj = 25

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49 views8 pages

Product Summary Feature: Qualified According To AEC Q101

SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode Logic Level dv / dt rated Product Summary VDS V A drain pin 3 Qualified according to AEC Q101 gate pin1 source pin 2 2 1 VPS05161 Pb-free Yes Yes Tape and Reel Information L6327: 3000 pcs / reel L6433: 10000 ppm / reel Maximum Ratings, at Tj = 25

Uploaded by

BOLFRA
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
You are on page 1/ 8

Rev. 1.

41

BSS123

SIPMOS Small-Signal-Transistor
Feature N-Channel Enhancement mode Logic Level dv/dt rated

Product Summary
VDS

100 6 0.17
PG-SOT23

V A

RDS(on) ID
3

Drain pin 3

Qualified according to AEC Q101

Gate pin1 Source pin 2


2
1
VPS05161

Type BSS123 BSS123

Package PG-SOT23 PG-SOT23

Pb-free Yes Yes

Tape and Reel Information L6327: 3000 pcs/reel L6433: 10000 pcs/reel

Marking SAs SAs

Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous drain current


TA=25C TA=70C

Symbol ID

Value 0.17 0.14

Unit A

Pulsed drain current


TA=25C

I D puls
dv/dt VGS Ptot

0.68 6 20 Class 1a 0.36 -55... +150 55/150/56 W C kV/s V

Reverse diode dv/dt


IS=0.17A, VDS=80V, di/dt=200A/s, Tjmax=150C

Gate source voltage

ESD Sensitivity (HBM) as per MIL-STD 883


Power dissipation
TA=25C

Operating and storage temperature IEC climatic category; DIN IEC 68-1

T j , Tstg

Page 1

2010-05-12

Rev. 1.41 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - ambient at minimum footprint Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
VGS=0, ID =250A

BSS123

Symbol min. RthJA -

Values typ. max. 350

Unit

K/W

Symbol min.
V(BR)DSS

Values typ. 1.4 max. 1.8

Unit

100 0.8

Gate threshold voltage, VGS = VDS


ID=50A

VGS(th) I DSS

Zero gate voltage drain current


VDS=100V, VGS=0, Tj=25C VDS=100V, VGS=0, Tj=150C

A 4 3 0.01 5 10 10 6 nA

Gate-source leakage current


VGS=20V, VDS=0

I GSS RDS(on) RDS(on)

Drain-source on-state resistance


VGS=4.5V, ID=0.13A

Drain-source on-state resistance


VGS=10V, ID=0.17A

Page 2

2010-05-12

Rev. 1.41 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics
Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time gfs Ciss Coss Crss td(on) tr td(off) tf
VDD=50V, VGS=10V, ID=0.17A, RG=6 VDS2*ID*RDS(on)max, ID=0.14A VGS=0, VDS=25V, f=1MHz

BSS123

Symbol

Conditions min. 0.09 -

Values typ. 0.19 55 8.5 5 2.7 3.1 9.9 25 max. 69 10.6 6.3 4 4.6 14.8 37

Unit

S pF

ns

Gate Charge Characteristics


Gate to source charge Gate to drain charge Q gs Q gd
VDD =80V, ID =0.17A

0.055 0.77 1.78 2.6

0.082 nC 1.15 2.67 V

Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current

Qg

VDD =80V, ID =0.17A, VGS =0 to 10V

V(plateau) VDD =80V, ID = 0.17 A

IS

TA=25C

0.81 27.6 10.5

0.17 0.68 1.2 41.1 15.7

Inv. diode direct current, pulsed ISM Inverse diode forward voltage
Reverse recovery time Reverse recovery charge

VSD
trr Qrr

VGS=0, IF = IS VR=50V, I F=lS , diF/dt=100A/s

V ns nC

Page 3

2010-05-12

Rev. 1.41 1 Power dissipation Ptot = f (TA)


0.38
BSS123

BSS123
2 Drain current ID = f (TA) parameter: VGS 10 V
BSS123

0.18

W A
0.32 0.14 0.28

P tot

ID
0.1 0.08 0.06 0.04 0.02 0 0 20 40 60 80 100 120

0.24 0.2 0.16 0.12 0.08 0.04 0 0

0.12

160

20

40

60

80

100

120

160

TA

TA

3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 C


10
1 BSS123

4 Transient thermal impedance ZthJA = f (tp ) parameter : D = tp /T


10 3
BSS123

K/W A
10 2 10
0

/ID = V
DS n (o )

tp = 120.0s

Z thJA

10 1

ID

RD

1 ms

10 -1
10 ms

10 0 D = 0.50 0.20 10
-1

0.10 0.05 0.02

10 -2 10 -2 DC 10 -3 0 10 10 -3 -7 10 single pulse

0.01

10

10

10

10

-6

10

-5

10

-4

10

-3

10

-2

10

VDS
Page 4

tp

2010-05-12

Rev. 1.41 5 Typ. output characteristic ID = f (VDS) parameter: Tj = 25 C, VGS


0.7

BSS123
6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: Tj = 25 C, VGS
20

A
0.6 0.55 0.5

ID

0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0

10V 5V 4.5V 4.1V 3.9V 3.7V 3.5V 3.1V 2.9V 2.3V

16

14 12 10 8 6 4 2 0 0

2.3V 2.9V 3.1V 3.5V 3.7V 3.9V 4.1V 4.5V 5.0V 10V

0.5

1.5

2.5

3.5

R DS(on)

0.1

0.2

0.3

0.4

0.5

0.7

VDS

ID

7 Typ. transfer characteristics ID = f ( VGS ); VDS 2 x ID x RDS(on)max parameter: Tj = 25 C


0.7

8 Typ. forward transconductance


gfs = f(ID)

parameter: Tj = 25 C
0.4

0.3 0.5

gfs
0.4 0.3 0.2 0.1 0 0

ID

0.25

0.2

0.15

0.1

0.05

0.5

1.5

2.5

3.5

0 0

0.1

0.2

0.3

0.4

0.5

0.7

VGS
Page 5

ID

2010-05-12

Rev. 1.41 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 0.17 A, VGS = 10 V
24
BSS123

BSS123
10 Typ. gate threshold voltage VGS(th) = f (Tj ) parameter: VGS = VDS ; ID =50A
2.2

20

V
98%

1.8

R DS(on)

V GS(th)

18 16 14

1.6 1.4 1.2


typ.

12 1 10 8 6 4 typ 2 0 -60 -20 20 60 100


C 2%

0.8 98% 0.6 0.4 0.2 180 0 -60 -20 20

60

100

Tj

C Tj

160

11 Typ. capacitances C = f (VDS) parameter: VGS =0, f=1 MHz, Tj = 25 C


10
3

12 Forward character. of reverse diode IF = f (VSD) parameter: Tj


10 0
BSS123

pF

10

Coss
10
1

IF
10 -2 Tj = 25 C typ

Ciss

10 -1

Crss

Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%)

10

12

16

20

24

28

36

10 -3 0

0.4

0.8

1.2

1.6

2.4 V

VDS
Page 6

VSD

2010-05-12

Rev. 1.41 13 Typ. gate charge


VGS = f (QG ); parameter: VDS ,

BSS123
14 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
BSS123

ID = 0.17 A pulsed, Tj = 25 C
16
V
BSS123

120

12

V (BR)DSS
0.5 VDS max 0.8 VDS max nC

114 112 110 108 106 104

V GS

10

8 0.2 VDS max

102 100 98 96

94 92

0 0

0.4

0.8

1.2

1.6

2.8

90 -60

-20

20

60

100

180

QG

Tj

Page 7

2010-05-12

BSS123
Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Pag 8

2010-05-12

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