Bandgap Reference Simulation

Principles and Problems

Joerg Berkner
IFAG AIM AP D MI ED CAD

Table of contents

Bandgap reference basics

Bandgap reference error sources

Summary

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Bandgap reference basics

IC temperature dependence

IC depends on T vs. IS(T) an VT(T)

IS includes (T) and ni2(T)
m (=XTI) represents the mobility temperature dependence
Eg represents the band gap of the material
I C (T ) =

V
IS (T )
exp BE
qB
VT (T )

Eg

IS (T ) = C T m exp
kT
T
IS (T ) = IS (T0 )
T0

exp g

VT

VT (T ) =

T
1
T0

kT
q

Vg
T
V
T
1 exp BE
I C (T ) = IS (T0 ) exp
kT / q
T0
kT / q T0

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Bandgap reference basics

VBE temperature dependence

VBE decreases with T (neg. TC)

Slope of VBE(T) depends complementary on current density JC

Note: The slope changes with temperature. This nonlinearity is the
reason for the nonlinearity of VBG vs. T

Important observation: VBE increases vs. T (pos. TC)
Vbe vs. T
C=1e-5, m=-1.5, Vg=1.11
1.00

JC+

0.90

Vbe / V

0.80

vbe1_1u
vbe2_10u

0.70

vbe3_100u
vbe4_1m

0.60

JC-

0.50
0.40
-50

50

100

150

T/C

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Bandgap reference basics

Widlar diode

Basic principle of a Bandgap reference is explained here using the
circuit proposed by Widlar in 1971

Fundamental idea of Widlar: compensate the negative TC of a base
emitter voltage VBE by adding a second voltage VR2 with positive TC

Problem: pos. TC (VBE) < neg. TC (VBE)

Solution: Amplification of VBE necessary
Ideal case
VBE

Real case
V BE

V BG(T) = VBE3 + VR2 = const.

VBG (T) = V BE3 + V R2 const.

V BE3

VBE3

V R2 = V BE * R 2 / R 3

V R2 = V BE * R2 / R 3

V R3=VBE

VR3=VBE
T

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T
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Bandgap reference basics

Principle

Using R2 > R3, the voltage VR3 is amplified by the factor R2 / R3. Because of
that, VR2 has a positive TC.

The reference voltage VBG is now given as the sum of a voltage with positive TC
(VR2) and a voltage with negative TC (VBE3)

V R 3 = V BE1 V BE 2 = V BE

+Vcc

Icc
VBG

R2
R1

T1

V R2 = V3 * R 2 / R 3
TC pos.
T3

T2
VBE2

V R 2 = VR 3

R2
R3

V BE3
TC neg.

VBE1
dV BE =VR3
TC pos.

R3

VBG = VR 2 + VBE 3 = VR 3

R2
+ VBE 3
R3

As demonstrated on the next slide, all Bandgap references use two basic
elements:
1. Two BJTs working at different current densities
2. Adding a VBE (-TC) and a resistor voltage drop (+TC)

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Bandgap reference basics

Circuit variations

Bandgap principle may be realized using different circuit techniques
1. Widlar, 1971: N1, N2, N3, R1, R2, R3 used for bandgap core
2. Kujik, 1973: N1, N2 are diode connected, bandgap core with only four devices,
N1, N2, R2 and R3, which is shifted upwards, IR1 = IR2 by OA
3. Brokaw, 1974: N1, N2 base connected, R2 shifted downwards
4. Simplified realization of Brokaw circuit, R1 = start resistance
Widlar, 1971

Brokaw , 1974

+Vcc

VCC

Kujik, 1973
ICC

V BG

R1
R1

V R2

R1=R2

V CC

R1

0V

R2

P1

P2

0V
R2

R1

R1=R2

N3

N1

R3

N2 VBE3

VBE

VBG
N1

R3

R1

VBE1
VBG

VBE

VBG

N2

N1

R3

N2
VBE2

R2

V BE

VBG

N2

N1
VBE1

R3

VBE*
2R2/R 3
R2

V BG = VBE3+ (R 2/R 3) * V BE

VBG = VBE2+ (1+R2/R 3) * VBE

20 years anniversary AKB, Infineon Technologies AG, Munich, Oct. 18 + 19, 2007 v071021

VBG = V BE1+ (2R 2/R 3) * VBE

VBE

VBE*
2R2/R3

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Bandgap reference basics

Bandgap voltage maximum

Designers goal is, to place the VBG(T) maximum at the temperature of
normal device operating conditions

Note: Maximum of VBG(T) appears at that point where the absolute
values of the temperature coefficients of VR2 and VBE3 are equal

VBG

V BG

T
TC

-TC(VBE3 )
TC(V R2)

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-TC(VBE3) = TC(VR2)

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Bandgap reference basics

Bandgap voltage maximum

Effect of an increase of the

Effect of increasing the negative
positive temperature coefficient
temperature coefficient

Increase may be realized by

This may be realized by decreasing
increasing the ratio r = R2 / R3 or
the collector current density of T3
the ratio a = AE2 / AE3
(changing ICT3 or AET3)

Result: shift of the VBG maximum
Result: shift of the VBG maximum
towards higher temperatures
towards lower temperatures
VBG

TC

VBG

VBG

VBG

-TC(VBE3 )

-TC(V BE3 )

TC(V R2)
TC

TC(VR2)

R 2/R 3 +
T

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Bandgap reference basics

PTAT current

PTAT = Proportional To Absolute Temperature

In all Bandgap circuits, the current through R3 is PTAT, because it is
defined by VBE

In a Widlar diode ICT2 is proportional to absolute temperature (PTAT)
because the current is defined by VBE, which is PTAT

If R1 = R2 and ICT1 = ICT2 = ICT3, this is valid for ICT1 too
+Vcc

VCC

Icc
VBG

P1

P2

R2
R1

VBG
R1

I CT 2 =

N2

N1

VR 3 VBE
=
R3
R3

T1

R3

R2

VBE

VBE*
2R2/R3

VBE

T3

T2
VBE2

VBE3
TC neg.

VBE1
dVBE =VR3
TC pos.

VBE1

VR2 = V3 * R 2 / R 3
TC pos.

R3

kT IST 2
=
ln

q IST 1

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Table of contents

Bandgap reference basics

Bandgap reference error sources

Summary

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Bandgap reference error sources

Criteria for bandgap evaluation
To evaluate a Bandgap simulation or measurement result,
we need a definition of the criteria

Evaluating DC results we
may use:
1. Bandgap voltage at VBG @
T=TOP or T= 25
2. Locus of VBGmax
3. VBG temperature coefficient
TCVBG (in ppm)

Other important Bandgap
criteria from designers point of
view are:
1. Power supply voltage rejection
PSRR = dVBG / dVCC
2. Current consumption
3. Dynamic behavior: switch on
time, stability
4. Noise behavior

VBG
VBG MAX
VBG T25
VBG TOP

dVBG

TMIN T=25

TOP=75

TMAX

Operating range

TCVBG

(
V
=

BG MAX

VBG MIN )

(TMAX TMIN )

1
VBG (T = 25)

Need to talk about the same things,

that is, to use the same definitions

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Bandgap reference error sources

Problem definition
Problem: simulated and measured
Bandgap voltage are different

VBG

sim

Designers conclusion is often: the

transistor model is wrong!

meas
T

Request: improved device models

If a problem is defined, the solution is half-on way

(J.Huxley, Biologist, 1897-1975)

Task: Identify the error sources in BG design

First, we have to distinguish:
The problem appears for a

packaged device
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on wafer device
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Bandgap reference error sources

Mechanical stress

Mechanical stress is the
main cause of long term
drift and package induced
inaccuracy in band reference
voltages

Reason: piezojunction effect
changes both mobility and
intrinsic carrier concentration
in the base

Result: change in IS resp.
VBE in the order of -3 mV to
+2 mV (calculated)

VBG is changed by 50 mV for
a CMOS bandgap

5mV

50mV

Source: Fruett et.al. SSC,

vol.38, No.7, July 2003,
p.1288
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Bandgap reference error sources

Mismatch effects

Considering the right hand side Bandgap cell, we may
identify six error sources:
1. pnp mirror mismatch, caused by IB and Early effect
P2
2. R2 and R3 absolute resistor tolerance (changes the branch
VBG
currents, but not the ratio R2 / R3)
3. R2 and R3 resistor mismatch (changes the ratio R2 / R3)
4. R2 and R3 absolute TC (changes the absolute value of R2 N1
and R3 and in this way the branch currents)
VBE1
5. R2 and R3 mismatch of TC (changes the ratio of R2 / R3)
6. IC mismatch of N1 and N2, caused e.g. by emitter size
mismatch (creates a additional delta VBE)

VCC

P1

R1

N2

R3

R2

VBE

VBE*
2R2/R3

It has been found, that resistor tolerances and

current mirror mismatch are the dominant
sources of error in bandgap circuits
(Source: Gupta, MSCS 2002, p. III-575)

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Bandgap reference error sources

SGP model parameters

Which SGP model parameters are important for bandgap simulation?
1.
2.
3.
4.
5.

IS
XTI
EG
XTB
VAR

Vg
T
T
1
I C (T ) = IS (T0 ) exp
T0
kT / q T0

V
exp BE
kT / q

Staveren (TCS, 1996, pp.418) investigated for a Si-technology the

effect of VAR on VBG and found an error in the order of 10 mV

VError =

VT
*VREF
VAR

VError =

26mV
1.2V = 12mV
2.6V

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Bandgap reference error sources

SGP model parameters: Effect of XTI

Increasing XTI results in an increasing TC(VBET3), -TC component of the
Widlar circuit is enlarged and the maximum is shifted to lower
temperatures (green curve)

Decreasing XTI results in an decreasing TC(VBET3), -TC component of
the Widlar circuit is reduceded and the maximum is shifted to higher
temperatures (red curve)

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Bandgap reference error sources

SGP model parameters: Effect of EG

Increasing EG results in an increasing TC(VBET3), -TC component is
enlarged and the maximum is shifted to lower temperatures (green
curve)

Decreasing EG results in an decreasing TC(VBET3), -TC component of
the Widlar circuit is reduced and the maximum is shifted to lower
temperatures (red curve)

20 years anniversary AKB, Infineon Technologies AG, Munich, Oct. 18 + 19, 2007 v071021

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Table of contents

Bandgap reference basics

Bandgap reference error sources

Summary

20 years anniversary AKB, Infineon Technologies AG, Munich, Oct. 18 + 19, 2007 v071021

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Summary
There are different possible reasons for Bandgap simulation and
measurement errors:

for packaged devices: mechanical stress

for on wafer circuits:
1. pnp mirror mismatch
2. R2 and R3 tolerance and mismatch, TC tolerance and mismatch
3. npn IC matching and
4. npn IC(T) modeling (EG, XTI, XTB, IS, VAR)
To evaluate these effects on bandgap simulation results it is
necessary to
1. use special bandgap modeling test circuits, which allow to seperate
these effects
2. apply improved extraction methods for EG, XTI (e.g. proposed by
Beckrich et.al. at CMRF2004)

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