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Lecture2 Cryst Defects

This document discusses crystal defects and contamination reduction in silicon wafers. It describes various types of crystal defects from point to volume defects. It also outlines a three-level approach to contamination reduction: 1) cleaning the factory environment, 2) cleaning wafer surfaces to remove particulates, and 3) gettering to collect metal atoms away from active device regions. Gettering involves damaging regions to act as sinks that capture defects through diffusion and trapping processes. Advances in clean rooms, cleaning methods, and oxygen control aim to further reduce contamination levels.

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Habib Shinwari
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53 views19 pages

Lecture2 Cryst Defects

This document discusses crystal defects and contamination reduction in silicon wafers. It describes various types of crystal defects from point to volume defects. It also outlines a three-level approach to contamination reduction: 1) cleaning the factory environment, 2) cleaning wafer surfaces to remove particulates, and 3) gettering to collect metal atoms away from active device regions. Gettering involves damaging regions to act as sinks that capture defects through diffusion and trapping processes. Advances in clean rooms, cleaning methods, and oxygen control aim to further reduce contamination levels.

Uploaded by

Habib Shinwari
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Crystal Defects &

Contamination Reduction

Contents
Defect in Silicon
0-D, 1-D, 2-D, and 3-D

Contamination reduction
Level -1 Clean factories
Level-2 Clean Wafer
Level- 3 Gettering

Defects in Silicon
0-D: Point defects
1-D: Line Defects
2-D: Area defects

3-D: Volume Defect / Precipitation

Defects Types

Various crystal defects in a SC-Lattice


h. Agglomeration of vacancies
f. Substitutional atom
widening the lattice

a. Interstitial Impurity

g. Vacancy

i. Substitutional Impurity
Atom Compressing lattice

c. Self interstitial

b. Edge-Dislocation
d. Precipitate

e. Agglomeration of
Self-Interstitial Atom
5

Point (0D) Defects

Schottky Defect

Frenkel Defect

Interstitial arriving from surface


6

Edge Dislocation

1D-Defects

Screw Dislocation

2D and 3D Defects
2D Defect

3D Defect

(Plummer Fig. 3-4 p 98)


8

Contamination Reductions
Level -1 Clean factories
(clean the environment around the wafer)

Level-2 Clean Wafer


(need to remove the particulates that adhere to wafer
surfaces)

Level- 3 Gettering
(collects the metal atoms in the region of the wafer
away from the active device)

Level-1 Clean factories


(clean the environment around the wafer)
Chemical gases and DI water used in the plant are potential sources of contamination.
Need to be filtered on- site.

Clean rooms
Advanced air filtration system
to remove particles

Classes - 10000, 1000, 100,


10, 1

10

Level -2 Wafer Cleaning


( This process removes the particulates that adhere to wafer surfaces)

Plummer
11

Level -2 Wafer Cleaning

Figure 4-16 Surface Analysis techniques used to identify


and quantify contamination in IC manufacturing.

Plummer

12

Level -3 Gettering
(This process collects the metal atoms in the region of wafer away from the active device)

Damaged region will


act as sink for
unwanted region.
Capture defects at
locations for away
from the device region.

Gettering steps:
1- Elements to be gettered must be freed from any trapping site.

2- They must diffuse to the gettering site


3- Must be trapped.

13

Level -3 Gettering

Figure 4-12 Process and time cycle for a


typical intrinsic gettering process

Oxygen diffuses interstitially in silicon with a diffusivity given by:

14

Example

15

Limits and Future Trends


Volume of clean rooms is far larger than the wafers (Cost
inefficient)
One alternate approach is SMIF (Standard Mechanical Interface)
boxes, work as sealed minienvironments for wafer processing
Other approach is mini-clean rooms

RCA cleaning method uses large quantities of chemicals and DI (Deionized) water at high temperatures resulting in large amount of
chemical vapors.
One alternative is to use Ohmis process (ozonized ultrapure water is
used), fewer chemicals used as compared to standard RCA clean
Other alternate is dry or vapor phase cleaning procedures. Mutipleprocess steps are done in different chambers of one machine
minimizing the contamination between cleaning and next step.

16

Limits and Future Trends

contd

Tighter control on oxygen concentration in CZ


wafers required.
Role of carbon in oxygen precipitation process
needs to be explored.
Can the level of cleanliness be achieved to get
away with the need of gettering?

17

Summary
Particles, cleaning and gettering are keyfactors of design features for a particular
product.
Three steps to minimize contaminations
To clean the environment
Wafer cleaning
Gettering (Extrinsic and Intrinsic)

18

Thank you !

19

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