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FRAM - New Generation of Non-Volatile Memory: Key Advantages What Is FRAM?

FRAM is a new type of non-volatile memory that combines the speed of DRAM with the data retention of flash memory and requires very little power to write data. It provides much faster read and write speeds compared to EEPROM and flash and can withstand over 100 trillion read/write cycles. Texas Instruments has developed a commercially viable FRAM product using a 130nm manufacturing process.

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56 views2 pages

FRAM - New Generation of Non-Volatile Memory: Key Advantages What Is FRAM?

FRAM is a new type of non-volatile memory that combines the speed of DRAM with the data retention of flash memory and requires very little power to write data. It provides much faster read and write speeds compared to EEPROM and flash and can withstand over 100 trillion read/write cycles. Texas Instruments has developed a commercially viable FRAM product using a 130nm manufacturing process.

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Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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FRAM New Generation

of Non-Volatile Memory

What is FRAM?
FRAM, an acronym for ferroelectric
random access memory, combines
the fast read and write access of
dynamic RAM (DRAM) with being
non-volatile (the ability to retain
data when power is turned off)
and ultra-low power consumption
(compared to EEPROM and Flash).
In spite of the name, FRAM is
not affected by magnetic fields
because there is no ferrous material
(iron) in the chip. FRAM is being
used today in several applications
including electronic metering,
automotive (e.g. smart air bags),
printers, instrumentation, medical
equipment, industrial

Key Advantages

microcontrollers and radio


frequency identification.
A FRAM memory cell consists of
a capacitor connected to a plate and
bit line. The orientation of the dipole
within the capacitor determines
whether a 1 or 0 is stored. The
dipole orientation can be set and
reversed by applying voltage across
either line.

Comparison of Memory Attributes


FRAM

EEPROM

Flash

Time to write 64 bytes to memory

1.6 ms

2,200 ms

6,400 ms

Time to read 64 bytes from memory

1.6 ms

4.5 ms

4.5 ms

Number of write cycles

100 trillion

500,000

100,000

Voltage needed to write

1.5 V

10 to 14 V

10 to 14 V

>3

Yes

No

No

Manufacturing cycle time


Resistance to gamma radiation

For further information on Texas Instruments FRAM technology:


www.ti.com/fram

SpeedFRAM has fast access


times similar to DRAM. The
actual write time is less than
50ns/word.This is ~1000
faster than EEPROM or Flash
memory making universal
memory reality.
Low PowerAccesses to
the FRAM occur at lower
voltages (1.5 V) requiring very
little power. EEPROM writes
accesses need 10 to 14 V
requiring much more power.
Lower power memory enables
more functionality at faster
transactions speeds.
Data ReliabilityAll the
necessary power for FRAM is
front-loaded at the beginning of
data access eliminating datatearing. FRAM experiences
100 trillion read/write cycles or
greater practically unlimited.

FRAM Reliability Data 2008


Test Description

Conditions

High-temperature operating life test

1,000 hours at 125C at maximum supply voltage

316 / 0

Data retention

1,000 hours at 125C for same state; 85C opposite state


thermal depolarization

283 / 0

Intrinsic data cycling

5.4 1012 cycles, 25C for 30 days at nominal supply voltage

160 / 0

Intrinsic data retention post cycling

100 hours at 125C same state; 85C opposite state thermal


depolarization

158 / 0

Extrinsic data cycling

1 108 cycles, 25C for 30 days

160 / 0

High-temperature operating life test

100 hours at 125C at maximum supply voltage

160 / 0

Pre-conditioning

24 hours at 125C followed by 192 hours at 30C /


60% relative humidity, 3 cycles at 260C

160 / 0

Temperature cycle

700 cycles, 55C to 125C

80 / 0

HAST

168 hours at 130C / 85% relative humidity

79 / 0

ESD / LU

2,500 V HBM, 800 V, 2 maximum supply voltage at 90C

33 / 0

FRAM Reliability

FRAM Data Read / Rewrite

Texas Instruments (TI) FRAM new


generation of non-volatile memory is
designed, manufactured and tested
to meet the stringent requirements of
today and tomorrow. The following
tests, per JEDEC industry standard
test specifications for non-volatile
memory, guarantee 10 years of
operation and data retention
at 85C. These test results are a
small portion of the testing done
continuously at TI.

Adata read access from FRAM


includes a rewrite of the data back
to the same memory location.
This is done within the memory
block automatically. This read/
restore operation is similar to
DRAM, commonly used in personal
electronics. Since FRAM has an
inexhaustible write endurance (>100
trillion write/read cycles), this is not a
practical concern.

FRAM Security
Studies by a leading security lab
have concluded that FRAMs
functional features could change
the smart card security landscape
compared to existing EEPROM
technologies. FRAM is more resistant
to data corruption via electric fields,
radiation, etc. Also, the extremely
fast write times and the small 130
nanometer (nm) process node
make it more resistant to physical
attacks. Furthermore, FRAMs much
lower power consumption arguably
makes it more difficult to attack
with differential power analysis
techniques.
The platform bar is a trademark of Texas Instruments.
2009 Texas Instruments Incorporated

FRAM Manufacturing
While the benefits of FRAM have
been known for many years,
productization at acceptable
manufacturing yields has posed
challenges to many companies.TI has
been successfully producing FRAM
memory at an advanced process
node (130 nm) for over two years.
TIs FRAM technology is the result
of over 10 years of manufacturing
development with well over 200
issued patents.

Samples / Fail

For further information on TIs


FRAM technology:
1. T.S. Moise, et al., Demonstra
tion of a 4Mb High-Sensity
Ferroelectric Memory Embed
ded within a 130nm, 5LM Cu/
FSG Logic Process, Int. Elec.
Dev. Meet., 2002, p. 535.
2. J. Rodriguez, et al., Reliability
Properties of Low-Voltage PZT
Ferroelectric Capacitors and
Memory Arrays, IEEE Trans.
On Dev. Mat. Reliability,
Vol. 4, No. 3, September 2004,
p. 436.
3. H.P. McAdams et al., A 64Mb
Embedded FRAM Utilizing a
130nm 5LM Cu/FSG Logic
Process, IEEE J. Solid State
Circ., Vol. 39, No.4, 2004.,
p. 667.
4. J. Rodriguez, et al., Reliability
Demonstration Ferroelectric
Random Access Memory
Embedded within a 130nm
CMOS Process, Proceedings
of the IEEE Non-Volatile
Memory Tech. Workshop,
September 2007, pp. 6466.

SZZT014A

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