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MJLL 4281 A

The MJL4281A and MJL4302A are complementary NPN and PNP power transistors intended for high power audio applications. They can handle up to 350V and 15A continuously, have gains of 80-240, and feature low saturation voltages and harmonic distortion. Key specifications and characteristics are provided such as thermal ratings, electrical ratings, and typical performance curves. The document also includes package details and ordering information.

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Alejandro Borrego Dominguez
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111 views7 pages

MJLL 4281 A

The MJL4281A and MJL4302A are complementary NPN and PNP power transistors intended for high power audio applications. They can handle up to 350V and 15A continuously, have gains of 80-240, and feature low saturation voltages and harmonic distortion. Key specifications and characteristics are provided such as thermal ratings, electrical ratings, and typical performance curves. The document also includes package details and ordering information.

Uploaded by

Alejandro Borrego Dominguez
Copyright
© © All Rights Reserved
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MJL4281A (NPN)

MJL4302A (PNP)
Preferred Device

Complementary NPNPNP
Silicon Power Bipolar
Transistors
The MJL4281A and MJL4302A are PowerBase power transistors
for high power audio.

350 V CollectorEmitter Sustaining Voltage


Gain Complementary:

Gain Linearity from 100 mA to 5 A


High Gain 80 to 240
hFE = 50 (min) @ IC = 8 A
Low Harmonic Distortion
High Safe Operation Area 1.0 A/100 V @ 1 Second
High fT

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15 AMPERES
COMPLEMENTARY
SILICON POWER
TRANSISTORS
350 VOLTS
230 WATTS

MAXIMUM RATINGS (TJ = 25C unless otherwise noted)


Symbol

Value

Unit

CollectorEmitter Voltage

VCEO

350

Vdc

CollectorBase Voltage

VCBO

350

Vdc

EmitterBase Voltage

VEBO

5.0

Vdc

CollectorEmitter Voltage 1.5 V

VCEX

350

Vdc

Collector Current Continuous


Collector Current Peak (Note 1)

IC

15
30

Adc

Base Current Continuous

IB

1.5

Adc

Total Power Dissipation @ TC = 25C


Derate Above 25C

PD

230
1.84

Watts
C/W

TJ, Tstg

 65 to
+150

Symbol

Max

Unit

RJC

0.54

C/W

Rating

Operating and Storage Junction


Temperature Range

1
2

Thermal Resistance,
Junction to Case

TO264
CASE 340G
STYLE 2

MARKING DIAGRAM

MJL
4xxxA
LLYWW

THERMAL CHARACTERISTICS
Characteristic

1 BASE

3 EMITTER

2 COLLECTOR
MJL4xxxA
xxx
LL
Y
WW

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.

= Device Code
= 281 OR 302
= Location Code
= Year
= Work Week

ORDERING INFORMATION
Device

Package

Shipping

MJL4281A

TO264

25 Units/Rail

MJL4302A

TO264

25 Units/Rail

Preferred devices are recommended choices for future use


and best overall value.

Semiconductor Components Industries, LLC, 2003

July, 2003 Rev. 1

Publication Order Number:


MJL4281A/D

MJL4281A (NPN) MJL4302A (PNP)


ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic

Symbol

Min

VCE(sus)

350

Max

Unit

OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage
(IC = 50 mA, IB = 0)
Collector Cutoff Current
(VCE = 200 V, IB = 0)

ICEO

Collector Cutoff Current


(VCB = 350 Vdc, IE = 0)

ICBO

Emitter Cutoff Current


(VEB = 5.0 Vdc, IC = 0)

IEBO

Vdc
100

Adc
Adc

50

5.0

4.5
1.0

80
80
80
80
50
10

250
250
250
250

1.0

1.4

1.5

35

600

Adc

SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(VCE = 50 Vdc, t = 1.0 s (nonrepetitive)
(VCE = 100 Vdc, t = 1.0 s (nonrepetitive)

IS/b

Adc

ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
(IC = 1.0 Adc, VCE = 5.0 Vdc)
(IC = 3.0 Adc, VCE = 5.0 Vdc)
(IC = 5.0 Adc, VCE = 5.0 Vdc)
(IC = 8.0 Adc, VCE = 5.0 Vdc)
(IC = 15 Adc, VCE = 5.0 Vdc)

hFE

CollectorEmitter Saturation Voltage


(IC = 8.0 Adc, IB = 0.8 Adc)

VCE(sat)

EmitterBase Saturation Voltage


(IC = 8.0 Adc, IB = 0.8 A)

VBE(sat)

BaseEmitter ON Voltage
(IC = 8.0 Adc, VCE = 5.0 Vdc)

VBE(on)

Vdc
Vdc
Vdc

DYNAMIC CHARACTERISTICS
fT

CurrentGain Bandwidth Product


(IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1.0 MHz)

MHz

Cob

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2

pF

MJL4281A (NPN) MJL4302A (PNP)


TYPICAL CHARACTERISTICS
1000

hFE, DC CURRENT GAIN

hFE, DC CURRENT GAIN

1000

TJ = 100C

100

TJ = 25C

0.1

10

100

0.01

10

100

IC, COLLECTOR CURRENT (A)

1000

hFE, DC CURRENT GAIN

hFE, DC CURRENT GAIN

TJ = 25C

0.1

10

TJ = 100C
100

10
0.01

100

TJ = 25C

0.1

10

100

IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

Figure 3. DC Current Gain, VCE = 20 V,


NPN MJL4281A

Figure 4. DC Current Gain, VCE = 20 V,


PNP MJL4302A
2.0
1.8

1.2

SATURATION VOLTAGE (V)

SATURATION VOLTAGE (V)

Figure 2. DC Current Gain, VCE = 5 V,


PNP MJL4302A

1.4

1
0.8

Vbe(sat)

0.6
0.4
Vce(sat)

0.2
0
0.01

0.1

IC, COLLECTOR CURRENT (A)

TJ = 100C

10
0.01

TJ = 25C

Figure 1. DC Current Gain, VCE = 5 V,


NPN MJL4281A
1000

100

100

10

10
0.01

TJ = 100C

0.1

TJ = 25C
Ic/Ib = 10
10

1.6
1.4
1.2
1.0
Vbe(sat)

0.8
0.6
0.4

Vce(sat)

0.2
100

0.0
0.01

0.1

TJ = 25C
Ic/Ib = 10
10

IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

Figure 5. Typical Saturation Voltage,


NPN MJL4281A

Figure 6. Typical Saturation Voltage,


PNP MJL4302A

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3

100

MJL4281A (NPN) MJL4302A (PNP)


TYPICAL CHARACTERISTICS
2.5
VBE(on), BASEEMITTER VOLTAGE
(V)

1.2
1.0
0.8
0.6
0.4
0.2

fT, CURRENT BANDWIDTH PRODUCT (MHz)

0.0
0.01

0.1

10

100

1.0

0.5

0.0
0.01

0.1

10

Figure 7. Typical BaseEmitter Voltages,


NPN MJL4281A

Figure 8. Typical BaseEmitter Voltages,


PNP MJL4302A

60

VCE = 5 V

50
40
VCE = 10 V
30
20
TJ = 25C
ftest = 1 MHz

1.5

IC, COLLECTOR CURRENT (A)

70

10

2.0

IC, COLLECTOR CURRENT (A)

0.1

10

fT, CURRENT BANDWIDTH PRODUCT (MHz)

VBE(on), BASEEMITTER VOLTAGE


(V)

1.4

100

70
60
VCE = 5 V
50

VCE = 10 V

40
30
20
10

TJ = 25C
ftest = 1 MHz

0
0.1

10

IC, COLLECTOR CURRENT (A)

Figure 9. Typical Current Gain Bandwidth Product,


NPN MJL4281A

Figure 10. Typical Current Gain Bandwidth Product,


PNP MJL4302A
100

10 mS

IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

100

10
1 Sec
1

100 mS

0.1

TJ = 25C

0.01
1

10 mS
10
1 Sec
1

100 mS

0.1

TJ = 25C

0.01
10

100

1000

Vce, COLLECTOREMITTER VOLTAGE (V)

10

100

1000

Vce, COLLECTOREMITTER VOLTAGE (V)

Figure 11. Active Region Safe Operating Area,


NPN MJL4281A

Figure 12. Active Region Safe Operating Area,


PNP MJL4302A

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4

MJL4281A (NPN) MJL4302A (PNP)


PACKAGE DIMENSIONS
TO3PBL (TO264)
CASE 340G02
ISSUE H

0.25 (0.010)

T B

T
C
E

U
N
A
1

Y
P
K

F 2 PL
G

J
H

D 3 PL
0.25 (0.010)

Y Q

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
U
W

MILLIMETERS
MIN
MAX
28.0
29.0
19.3
20.3
4.7
5.3
0.93
1.48
1.9
2.1
2.2
2.4
5.45 BSC
2.6
3.0
0.43
0.78
17.6
18.8
11.0
11.4
3.95
4.75
2.2
2.6
3.1
3.5
2.15
2.35
6.1
6.5
2.8
3.2

STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER

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5

INCHES
MIN
MAX
1.102
1.142
0.760
0.800
0.185
0.209
0.037
0.058
0.075
0.083
0.087
0.102
0.215 BSC
0.102
0.118
0.017
0.031
0.693
0.740
0.433
0.449
0.156
0.187
0.087
0.102
0.122
0.137
0.085
0.093
0.240
0.256
0.110
0.125

MJL4281A (NPN) MJL4302A (PNP)

PowerBase is a trademark of Semiconductor Components Industries, LLC.


ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be
validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION


Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: orderlit@onsemi.com

JAPAN: ON Semiconductor, Japan Customer Focus Center


291 Kamimeguro, Meguroku, Tokyo, Japan 1530051
Phone: 81357733850
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.

N. American Technical Support: 8002829855 Toll Free USA/Canada

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6

MJL4281A/D

This datasheet has been download from:


www.datasheetcatalog.com
Datasheets for electronics components.

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