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Mbr735 Thru Mbr760: Schottky Rectifier

This document provides specifications for Schottky rectifier diodes in plastic TO-220 packages for reverse voltages between 35-60V and forward currents of 7.5A. The diodes feature majority carrier conduction, low forward voltage drop, and high surge capability. They are intended for use in applications such as low voltage inverters, motor controls, and polarity protection where their fast switching speeds provide advantages over standard diodes.
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0% found this document useful (0 votes)
75 views2 pages

Mbr735 Thru Mbr760: Schottky Rectifier

This document provides specifications for Schottky rectifier diodes in plastic TO-220 packages for reverse voltages between 35-60V and forward currents of 7.5A. The diodes feature majority carrier conduction, low forward voltage drop, and high surge capability. They are intended for use in applications such as low voltage inverters, motor controls, and polarity protection where their fast switching speeds provide advantages over standard diodes.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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MBR735 THRU MBR760

SCHOTTKY RECTIFIER
Reverse Voltage - 35 to 60 Volts Forward Current - 7.5 Amperes

FEATURES
TO-220AC ♦ Plastic package has Underwriters Laboratory
Flammability Classifications 94V-0
♦ Metal to silicon rectifier,
0.185 (4.70)
0.415 (10.54) MAX.
0.175 (4.44)
0.370 (9.40)
0.360 (9.14) 0.154 (3.91)
DIA.
0.055 (1.39) majority carrier conduction
♦ Low power loss, high efficiency
0.148 (3.74) 0.045 (1.14)

♦ High current capability, low forward


0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
voltage drop
♦ High surge capability
0.560 (14.22)
0.530 (13.46)
0.410 (10.41)
0.390 (9.91)
0.635 (16.13)
0.350 (8.89)
0.330 (8.38)
♦ For use in low voltage, high frequency inverters, free
0.625 (15.87)
PIN 1.148 (29.16) wheeling, and polarity protection applications
♦ Guardring for overvoltage protection
1 2 1.118 (28.40)
0.110 (2.79)
0.160 (4.06)

♦ High temperature soldering guaranteed:


0.100 (2.54)
0.140 (3.56)

0.560 (14.22)
0.530 (13.46)
250°C/10 seconds, 0.25" (6.35mm) from case
MECHANICAL DATA
0.105 (2.67)
0.095 (2.41) 0.037 (0.94)
Case: JEDEC TO-220AC molded plastic body
0.027 (0.68) 0.022 (0.56)
0.014 (0.36)
Terminals: Lead solderable per MIL-STD-750,
Method 2026
0.205 (5.20)
PIN 1
Polarity: As marked
0.195 (4.95) PIN 2 CASE
Mounting Position: Any
Mounting Torque: 5 in. - lbs. max.
Dimensions in inches and (millimeters) Weight: 0.08 ounces, 2.24 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS MBR735 MBR745 MBR750 MBR760 UNITS

Maximum repetitive peak reverse voltage VRRM 35 45 50 60 Volts


Maximum working peak reverse voltage VRWM 35 45 50 60 Volts
Maximum DC blocking voltage VDC 35 45 50 60 Volts
Maximum average forward rectified current (SEE FIG 1) I(AV) 7.5 Amps
Peak repetitive forward current (square wave, 20 KHZ)
IFRM 15.0 Amps
at TC=105°C
Peak forward surge current, 8.3ms single half sine-
IFSM 150.0 Amps
wave superimposed on rated load (JEDEC Method)
Peak repetitive reverse surge current (NOTE 1) IRRM 1.0 0.5 Amps
Maximum instantaneous IF=7.5A, TC=25°C - 0.75
forward voltage at IF=7.5A, TC=125°C 0.57 0.65
VF Volts
(NOTE 2) IF=15A, TC=25°C 0.84 -
IF=15A, TC=125°C 0.72 -
Maximum instantaneous reverse current at
rated DC blocking voltage TC=25°C IR 0.1 0.5 mA
(NOTE 1) TC=125°C 15.0 50
Voltage rate of change (rated VR) dv/dt 10,000 V/µs
Maximum thermal resistance, (NOTE 3) RΘJC 3.0
°C/W
RΘJA 60.0
Operating junction temperature range TJ -65 to +150 °C
Storage temperature range TSTG -65 to +175 °C
NOTES:
(1) 2.0µs, pulse width, f=1.0 KHZ
(2) Pulse test: 300µs pulse width, 1% duty cycle
(3) Thermal resistance from junction to case and/or thermal resistance from junction to ambient

4/98
RATINGS AND CHARACTERISTIC CURVES MBR735 THRU MBR760
FIG. 1 - FORWARD CURRENT DERATING CURVE FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
10
RESISTIVE OR INDUCTIVE LOAD 175

PEAK FORWARD SURGE CURRENT,


AVERAGE FORWARD CURRENT,

TJ=TJ max.
8.3ms SINGLE HALF SINE-WAVE
8 150 (JEDEC Method)

125
AMPERES

AMPERES
100
4
75
2
50
MBR735 - MBR745
MBR750 & MBR760
0 25
0 50 100 150 1 10 100
CASE TEMPERATURE, °C NUMBER OF CYCLES AT 60 HZ

FIG. 4 - TYPICAL REVERSE CHARACTERISTICS

FIG. 3 - TYPICAL INSTANTANEOUS FORWARD 50


CHARACTERISTICS MBR735 - MBR745
MBR750 & MBR760
50
10
TJ=125°C

INSTANTANEOUS REVERSE CURRENT,


INSTANTANEOUS FORWARD CURRENT,

10
PULSE WIDTH = 300µs

TJ=125°C
MILLIAMPERES 1

TJ=25°C
AMPERES

0.1
MBR735 - MBR745 TJ=75°C
MBR750 & MBR760
0.1

0.01

0.01 TJ=25°C
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.001
INSTANTANEOUS FORWARD VOLTAGE, 0 20 40 60 80 100
VOLTS PERCENT OF RATED PEAK REVERSE
VOLTAGE, %

FIG. 5 - TYPICAL JUNCTION CAPACITANCE FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE


4,000 100
TRANSIENT THERMAL IMPEDANCE, °C/W

TJ=25°C
f=1.0 MHz
Vsig=50mVp-p
JUNCTION CAPACITANCE, pF

1,000 10

100
MBR735 - MBR745
MBR750 & MBR760
40 0.1
0.1 1 10 100 0.01 0.1 1 10 100
REVERSE VOLTAGE, VOLTS t, PULSE DURATION, sec.

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