® TYNx40 Series

STANDARD 40A SCRs

MAIN FEATURES: A

Symbol Value Unit

G
IT(RMS) 40 A
K

VDRM/VRRM 600 to 1000 V

IGT A
35 mA

DESCRIPTION
K
The TYNx40 series is suitable for applications A
G
where in-rush current conditions are critical, such
as overvoltage crowbar protection circuits in TO-220AB
power supplies, in-rush current limiting circuits, (TYNx40)
solid state relays (in back to back configuration),
welding equipment, high power motor control
circuits.
Using clip assembly technology, they provide a
superior performance in high surge current capa-
bilites.

ABSOLUTE RATINGS (limiting values)

Symbol Parameter Value Unit

IT(RMS) RMS on-state current (180° conduction angle) Tc = 95°C 40 A

IT(AV) Average on-state current (180° conduction angle) Tc = 95°C 25 A
ITSM Non repetitive surge peak on-state tp = 8.3 ms 480
current Tj = 25°C A
tp = 10 ms 460

I ²t I²t Value for fusing Tj = 25°C 1060 A2S

Critical rate of rise of on-state current
dI/dt IG = 2 x IGT , tr ≤ 100 ns F = 60 Hz Tj = 125°C 50 A/µs

IGM Peak gate current tp = 20 µs Tj = 125°C 4 A

PG(AV) Average gate power dissipation Tj = 125°C 1 W

Tstg Storage junction temperature range - 40 to + 150
°C
Tj Operating junction temperature range - 40 to + 125

VRGM Maximum peak reverse gate voltage 5 V

April 2002 - Ed: 4A 1/4

TYNx40 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol Test Conditions Value Unit
IGT MIN. 3.5
mA
VD = 12 V RL = 33 Ω MAX. 35
VGT MAX. 1.3 V
VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C MIN. 0.2 V
IH IT = 500 mA Gate open MAX. 75 mA
IL IG = 1.2 IGT MAX. 150 mA
dV/dt VD = 67 % VDRM Gate open Tj = 125°C MIN. 1000 V/µs
VTM ITM = 80 A tp = 380 µs Tj = 25°C MAX. 1.6 V
Vt0 Threshold voltage Tj = 125°C MAX. 0.85 V
Rd Dynamic resistance Tj = 125°C MAX. 10 mΩ
IDRM Tj = 25°C MAX. 5 µA
VDRM = VRRM
IRRM Tj = 125°C 4 mA

THERMAL RESISTANCES
Symbol Parameter Value Unit
Rth(j-c) Junction to case (DC) 0.8 °C/W
Rth(j-a) Junction to ambient (DC) 60 °C/W

PRODUCT SELECTOR

Voltage
Part Number Sensitivity Package
600 V 800 V 1000 V
TYNx40 X X X 35 mA TO-220AB

ORDERING INFORMATION

TYN 6 40 (RG)
PACKING MODE
STANDARD Blank: Bulk
SCR RG: Tube
SERIES VOLTAGE:
6: 600V CURRENT: 40A
8: 800V
10: 1000V

OTHER INFORMATION

Part Number Marking Weight Base Quantity Packing mode

TYNx40 TYNx40 2.3 g 250 Bulk

TYNx40RG TYNx40 2.3 g 50 Tube

Note: x = voltage

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 TYNx40 Series

Fig. 1: Maximum average power dissipation Fig. 2: Average and DC on-state current versus
versus average on-state current. case temperature.

P(W) IT(av)(A)
40 50
α = 180°
35 D.C.
40
30
25 30
α = 180°
20
15 20
360°
10
10
5
IT(av)(A) α Tcase(°C)
0 0
0 5 10 15 20 25 30 0 25 50 75 100 125

Fig. 3: Relative variation of thermal impedance Fig. 4: Relative variation of gate trigger current,
versus pulse duration. holding current and latching current versus
junction temperature.

K = [Zth/Rth] IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25°C]

1.00 2.5

Zth(j-c) 2.0
IGT
1.5
0.10 Zth(j-a) IH & IL
1.0

0.5
tp(s) Tj(°C)
0.01 0.0
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 -40 -20 0 20 40 60 80 100 120 140

Fig. 5: Surge peak on-state current versus Fig. 6: Non-repetitive surge peak on-state
number of cycles. current for a sinusoidal pulse with width
tp < 10 ms, and corresponding value of I²t.

ITSM(A) ITSM(A),I 2t(A2s)

500 5000
Tj initial = 25 °C
450
400 tp = 10ms ITSM
350 Non repetitive One cycle
I2t
300 Tj initial = 25 °C
1000
dI/dt
250 limitattion
200 Repetitive
Tcase = 95 °C
150
100
50 Number of cycles tp(ms)
0 100
1 10 100 1000 0.01 0.10 1.00 10.00

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TYNx40 Series

Fig. 7: On-state characteristics (maximum

values).

ITM(A)
500
Tj max.:
Vto = 0.85V
Rd = 10m Ω
100
Tj = Tj max.

10 Tj = 25°C

VTM(V)
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

PACKAGE MECHANICAL DATA

TO-220AB (Plastic)

DIMENSIONS
B C
REF. Millimeters Inches
b2

Min. Typ. Max. Min. Typ. Max.

L A 15.20 15.90 0.598 0.625
I
F a1 3.75 0.147
a2 13.00 14.00 0.511 0.551
A
B 10.00 10.40 0.393 0.409
b1 0.61 0.88 0.024 0.034
l4
b2 1.23 1.32 0.048 0.051
C 4.40 4.60 0.173 0.181
a1 c2
c1 0.49 0.70 0.019 0.027
l3
c2 2.40 2.72 0.094 0.107
l2
a2
e 2.40 2.70 0.094 0.106
F 6.20 6.60 0.244 0.259
I 3.75 3.85 0.147 0.151
I4 15.80 16.40 16.80 0.622 0.646 0.661
b1 M
L 2.65 2.95 0.104 0.116
c1
e
l2 1.14 1.70 0.044 0.066
l3 1.14 1.70 0.044 0.066
M 2.60 0.102

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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