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NTE234 Silicon PNP Transistor Low Noise, High Gain Amplifier

The NTE234 is a silicon PNP transistor designed for low noise preamplifiers and small signal amplifiers. It features low noise, high gain, and a low saturation voltage. The transistor has a TO92 package and can operate with a collector voltage up to 120V, current up to 100mA, and power up to 300mW at temperatures from -55°C to 125°C.

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Jorge Proença
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171 views2 pages

NTE234 Silicon PNP Transistor Low Noise, High Gain Amplifier

The NTE234 is a silicon PNP transistor designed for low noise preamplifiers and small signal amplifiers. It features low noise, high gain, and a low saturation voltage. The transistor has a TO92 package and can operate with a collector voltage up to 120V, current up to 100mA, and power up to 300mW at temperatures from -55°C to 125°C.

Uploaded by

Jorge Proença
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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NTE234

Silicon PNP Transistor


Low Noise, High Gain Amplifier

Description:
The NTE234 is a silicon PNP transistor in a TO92 type package designed especially for low noise
preamplifier and small signal industrial amplifier applications. This device features low collector satu-
ration voltage, tight beta control, and excellent low noise characteristics.

Features:
D Low Noise
D High DC Current Gain
D High Breakdown Voltage
D Low Pulse Noise

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Steady State Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C

Electrical Characteristics: (TA = +25°C unless otherwise specified)


Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current ICBO VCB = 120V, IE = 0 – – 100 nA
Emitter Cutoff Current IEBO VEB = 5V, IC = 0 – – 100 nA
Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 120 – – V
Collector–to–Emitter
DC Current Gain hFE VCE = 6V, IC = 2mA 350 – 700
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Saturation Voltage VCE(sat) IC = 10mA, IB = 1mA – – 0.3 V
Collector–to–Emitter
Base–to–Emitter Voltage VBE VCE = 6V, IC = 2mA – 0.65 – V
Transition Frequency fT VCE = 6V, IC = 1mA – 100 – MHz
Collector Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz – 4 – pF
Noise Figure NF VCE = 6V, IC = 100µA, – – 6 dB
f = 10Hz, Rg = 10kΩ
VCE = 6V, IC = 100µA, – – 2
f = 1Hz, Rg = 10kΩ
VCE = 6V, IC = 100µA, – 3 –
f = 1Hz, Rg = 100kΩ

.135 (3.45) Min

.210
(5.33)
Max Seating Plane

.500 .021 (.445) Dia Max


(12.7)
Min

E C B

.100 (2.54)

.050 (1.27)

.165
(4.2)
Max

.105 (2.67) Max


.105 (2.67) Max
.205 (5.2) Max

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