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Ipc - Jedec J-STD-020C
Moisture_Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices (2004 July)
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Ipc - Jedec J-STD-020C
Moisture_Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices (2004 July)
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‘Supersedes: IPCIJEDEC J-STD-020B - July 2002 IPCJEDEC J-STD-020A - April 1999 J-STD-020 - October 1996 YEDEC JESD22-A112 IPC-SN-786A - January 1995 IPC-SM-786 - December 1990 IPC/JEDEC J-STD-020C Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices ‘Ajoint standard developed by the IPC Plastic Chip Carrier Cracking Task Group (B-10a) and the JEDEC JC-14.1 Committee on Reliability Test Methods for Packaged Devices Users of this standard are encouraged to participate in the development of future revisions. Contact: JEDEC Ipc Solid State Technology Association 2215 Sanders Road 2500 Wilson Boulevard Northbrook, IL 60062-6135 Adlington, VA 22201-3834 Phone (847) 509-9700 Phone (703) 907-7500 Fax (847) 509-9798 Fax (703) 907-7501IPC/JEDEC J-STD-020C July 2004 ‘Supersedes IPC/JEDEC J-STD-020B July 2002 JOINT INDUSTRY STANDARD Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices Pe —s_ JzevEcly 2004 IPOWEDEC J-87D.0200 Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices 1 PURPOSE ‘The purpose of this standard is to idemtify the classification level of nonhermetic solid state surface mount devices (SMDs) that are sensitive to moisture-induced stress so that they can be properly packaged, stored, and handled to avoid damage during assembly solder reflow attachment and/or repair operations. This standard may be used to determine what clasification/preconuitioning level should be used for SMD package qualif- cation, Passing the criteria in this test method is not sufficient by itself to provide assurance of long-term reliability, 4.1 Scope This classification procedure applies to all nonhermetic solid state Surface Mount Devices (SMDs) in packages, which, because of absorbed moisture, could be sensitive to damage during solder reflow, The term SMD as used in this document means plastic encapsulated surface mount packages and other packages made with moisture-permeable materials. The categories are intended to be used by SMD producers to inform users (board assembly operations) of the level of mois- ture sensitivity of their product devices, and by board assembly operations to ensure that proper handling precautions are applied to moisture/reflow sensitive devices. If no major changes have been made to a previously qualified SMD package, this method may be used for reclassification according to 4.2. ‘This standard cannot address all of the possible component, board assembly and product design combinations. However, the standard does provide a test method and criteria for commonly used technologies. Where uncommon or specialized compo- nents or technologies are necessary, the development should include customer/manufacturer involvement and the criteria should include an agreed definition of product acceptance, SMD packages classified to a given moisture sensitivity level by using Procedures or Criteria defined within any previous version of J-STD-020, JESD22-A112 (rescinded), IPC-SM-786 (superseded) do not need to be reclassified to the current revision unless a change in classification level or & higher peak reflow temperature is desired. Note: If the procedures in this document are used on packaged devices that are not included in this specificetion’s scope, the failure criteria for such packages must be agreed upon by the device supplier and their end user. 4.2 Background The vapor pressure of moisture inside a nonhermetic package increascs greatly when the package is exposed to the high temperature of solder reflow. Under certain conditions, this pressure can cause internal delamination of the packaging materials from the die and/or leadframe/substrate, internal eracks that do not extend to the outside of the package, bond damage, wire necking, bond lifting, die lifting, thin film cracking, or eratering beneath the bonds. In the most severe case, the stress can result in external package cracks. This is commonly referred to as the “‘popcom’” phenomenon because the internal stress causes the package to bulge and then crack with an audible “pop.” SMDs are more susceptible to this problem than through-hole parts because they are exposed to higher temperatures during reflow soldering. The rea- son for this is that the soldering operation must occur on the same side of the board as the SMD device. For through-hole devices, the soldering operation occurs under the board that shields the devices from the hot solder. 2 APPLICABLE DOCUMENTS. 2.1 JEDEC Solid State Technology Associatlor JESD22-A120 Test Method for the Measurement of Moisture Diffusivity and Water Solubility in Organic Materials Used in Integrated Circuits JESD22-A119 Preconditioning Procedures of Plastic Surface Mount Devices Prior to Reliability Testing ESD 47 Stress Test Driven Qualification Specification YESD-625 Requirements for Handling Electrostatic Discharge Sensitive (ESD) Devices TweenIPOMEDEC J-STD-0200 ly 2004 2.2 Ie? IPC-TM-650 Test Methods Manual? 21.1 Mierosectioning 21.12 Microsectioning - Semi or Automatic Technique Microsection Equipment 2.3 Joint industry Standards ¥+870-093 Standard for Hancling, Packing, Shipping and Use of Moisture/Reflow Sensitive Surface Mount Devices 4570-095 Acoustic Microscopy for Nonhermeric Encapsulated Electronic Components 3 APPARATUS 3.1 Temperature Humidity Chambers Moisture chamber(s), capable of operating at 85 °C/85% RH, 85 °C/60% RH, 60 °C/ 60% RH, and 30 °C/60% RH. Within the chamber working area, temperature tolerance must be + 2°C and the RH tolerance must be * 3% RH, 8.2 Solder Reflow Equipment 3.2.1 Full Convection (Preferred) Full convection reflow system capable of maintaining the reflow profiles required by this standard. 9.2.2 Infrared Infrared (IR)/convection solder reflow equipment capable of maintaining the reflow profiles required by this standard. It is required that this equipment use IR to heat only the air and not directly impinge upon the SMD Packages! devices under test Note: The moisture sensitivity classification test results are dependent upon the package body temperature (rather than the mounting substrate and/or package terminal temperature). 88 Ovens Bake oven capable of operating at 125 +5/-0 °C, 3.4 Microscopes 3.4.1 Optical Microscope Optical Microscope (40X for external and 100X for cross-section exam). ‘3.4.2 Scanning Acoustic Microscope Scanning acoustic microscope with C-Mode and Through Transmission capability and capable of measuring a minimum delamination of 5% of the area being evaluated, Note 1: The scanning acoustic microscope is used to detect cracking and delamination. However, the presence of delami- nation does not necessarily indicate a pending reliability problem. The reliability impact of delamination must be established for a particular die/package system. Note 2: Refer to ICJEDEC J-STD-035 for operation of the scanning acoustic microscope. 9.5 Cross-Sectioning Microsectioning equipment as recommended per IPC-TM-650, Methods 2.1.1, 2.1.1.2 or other applicable document. 9.6 Electrical Test Electrical test equipment with capabilities to perform appropriate testing on devices. 3.7 Weighing Apparatus (Optional) Weighing apparatus capable of weighing the package to a resolution of 1 microgram ‘This apparatus must be maintained in a draft-free environment, such as a cabinet. Itis used to obtain absorption and des- ‘orption data on the devices under test (sec 8). 2 meno og ‘8. Curent and revised IPC Test Methods are evaate trough IPC-TN+4S0 cubsorpon and onto IPC mobo (wweipeorghumitesemethos Nm) wae 2July 2004 IPONEDEC J-S70-0200 4 CLASSIFICATION/RECLASSIFICATION Refer to 4.2 for guidance on reclassification of previously qualificd/classified SMDs. Engineering studies have shown that thin, small volume SMD packages reach higher body temperatures during reflow sol- dering 10 boards that have been profiled for larger packages. Therefore, technical and/or business issues normally require thin, small volume SMD packages (reference Table 4-1, 4-2) to be classified at higher reflow temperatures, Note 1: Previously classified SMDs should only be reclassified by the manufacturer. Users should refer to the “Moisture Sensitivity” label on the bag to determine at which reflow temperature the SMD packages were classified. Note 2: Level 1 SMD packages should be considered to have a maximum reflow temperature of 220 °C unless labeled as capable of reflow at other temperatures, Note 3: If supplier and user agree, components can be classified at temperatures other than those in Table 4-1 and 4-2. Table 4-1 SnPb Eutectic Process — Package Peak Reflow Temperatures. Volume mn Volume mmn™ Package Thickness <350, 380 25mm 280 +005 °C 225 +0 225 mm 225 40-5 225 +0156 Table 4-2 Pb-free Process ~ Package Classification Reflow Temperatures Package Volume ram? Volume mim? Volume men Thickness <350. '350 - 2000 32000 <1.6 mm 280 40°C 260 40°C * 260 +0°C™ 1.6 m= 2.5 mm 260 40°C 250 10°" 285 40°O™ 225 mm 250 20°C 285 +0°0" 245 40°C * "Tolerance: The device manulacturer/supplier shall assure process compalblly up to and including the stated classification ‘temperature (this means Peak reflow temperature +0 °C. For example 260 °C0°C) at the ratod MSL level. Note 1: The profing trance i + 0°C -X°C [based on machine vation capably) whatever reared fo contel the pre grocesa but a na ie wa ‘eed -5°C. The producer assures process cormpatblty a he peak reflow profile temperatures dotec Table 2. Note 2: Package vole excudes extemal terminals (bal, burs, lance, lads) anor nonntogsRest SPM Noto &: The maximum component temperature reached ding relow depends on pacagetaceeas and vkume The uso of convection ow roceases ‘reduces the ermal graders beiween psckages, Honever thermal aden di odlieences in hormal meso of SMD packages may tt exe Note 4: Comoonenis intone fr uo ina "eases" assembly process shall be evalated using the lead he" aaseaon temperatures sn protec Solned in Tle &-1, 42 ane 6-2 wheter orn ad ree. ‘4.1 Compatibility with Pb-Free Rework Unless otherwise specified by the device manufacturer, a Pb-free component (classified per Table 4.2), shall be capable of being reworked at 260 °C within eight hours of removal from dry storage or bake, per J-STD-033, To verify this capability for a component classified at a temperature below 260 °C, a sample of the size per 5.1.2 shall be soaked per Level 6 conditions (see Table 5-1) using a Time on Label (TOL) of eight hours, and reflowed at a classification temperature of 260 °C. All devices in the sample shall pass electrical test and have a damage response per 6.1 and 6.2 not greater than that observed for the same package at its rated MSL level. A component rated at 260 °C does not require this rework compatibility verification. 4.2 Reclassification SMD packages previously classified to a moisture sensitivity level and reflow peak/classification temperature may be reclassified if the damage response (delamination/cracking) at the more severe condition for items listed in 6.1 and 6.2 is less than, or equal to the damage response at the original classification condition. If no major changes have been made to a previously qualified SMD package, this method may be used for reclassification to an improved level (longer floor life) at the same reflow temperature, The reclassification level cannot be improved by ‘more than one level without additional reliability testing, Reclassification to Level 1 requires additional reliability testing, If no major changes have been made to a previously qualified SMD package, this method may be used for reclassification at a higher reflow temperature providing the moisture level remains the same or degrades to 2 more sensitive level,IPCHIEDEC J-STD-0206 shuly 2004 No SMD packages classified as moisture sensitive by any previous version of J-STD-020, JESD22-A112 (rescinded), IPC- SM-786 (superseded) may be reclassified as nonmoisture sensitive (Level 1) without additional reliability stress testing, ¢.g., JESD22-A113 and JESD47 or the semiconductor manufacturer’s in-house procedures. ‘To minimize testing, the results from a given SMD package may be generically accepted to cover al other devices which are manufactured in the same package, using the same packaging materials (die attach, mold compound and o die coating, ctc.), with the die using the same wafer fabrication technology, and with die pad dimensions not greater than those quali- fied. The following atributes could affect the moisture sensitivity of a device and may require reclassification *Die attach material/process. + Number of pins + Encepsulation (mold compound or glob top) material/process. * Die pad area and shape. Body size. + Passivation/die coating, + Leadframe, substrate, and/or heat spreader design/materialinsh “Die sizethickmess. + Wafer fabrication technology/process. ‘Interconnect. + Lead lock taping sizelocation as well as material 5 PROCEDURE ‘The recommended procedure is to start testing at the lowest moisture sensitivity level the evaluation package is reasonably expected to pass (based on knowledge of other similar evaluation packages), In the case of equipment malfunction, operator error or electrical power loss, engineering judgment shall be used to ensure that the minimum intent/requirements of this specification are met 5.1 Sample Requirements 5.4.1 Reclassification (Qualified Package Without Additional Reliability Testing) For a qualified SMD package being reclassified without additional reliability testing select a minimum sample of 22 units for each moisture sensitivity Tevel to be tested. A minimum of two nonconsecutive assembly lots must be included in the sample with each lot having approxi- mately the same representation. Sample units shall have completed all manufacturing processing required prior to shipment. Sample groups may be run concurrently on one of more moisture sensitivity levels. 9.1.2 Classification/Rectassification and Rework Select a minimum sample of 11 units for each moisture sensitivity level to be tested. A minimum of two nonconsecutive assembly lots must be included in the sample with each lot having approximately the same representation. Sample units shall have completed all manufacturing processes required prior to shipment, Sample groups may be run concurrently on one or more moisture sensitivity levels. Testing must be continued ‘until a passing level is found. SMD packages should not be reclassified by the user unless approved by the supplier. 5.2 Initial Electrical Test Test appropriate electrical parameters, e.g, data sheet values, in-house specifications, ete, Replace any components, while maintaining the sample requirements of 5.1.2, which fail to meet tested parameters. ‘5.8 Initial Inspection Perform an extemal visual and acoustic microscope examination, on all components, to establish a baseline for the cracking/delamination criteria in 6.2.1 Note: This standard does not consider or establish any accepU/eject criteria for delamination at initialAime zero inspection 4sly 2004 IPCAJEDEG J-sTD-c200 5.4 Bake Bake the sample for 24 hours minimum at 125 +S/-0 °C, This step is intended to remove moisture from the package so that it wil be “dry.” Note: This time/temperature may be modified if desorption data on the particular device under test shows that & different condition is required to obtain a “dry” package when starting in the wet condition for 85 °C/85% RH (sec 8.3. 5.8 Moisture Soak Place devices in a clean, dry, shallow container so that the package bodies do not touch or overlap each other. Submit each sample to the appropriate soak requirements shown in Table 5-1. At all times parts should be handled using proper ESD procedures in accordance with JESD 625. Table $1 Moisture Sensitivity Levels ‘SOAK REQUIREMENTS Lever FLOOR LIFE Standard ‘Accelerated Equivalent’ ME CONDITIONS | TIME (hours) | CONDITIONS | TIME (hours) | _ CONDITIONS P 168 F 1 Unlimited | <0 *cvas% RH a 85 *C/e5% AH 168 z 2 4 year 80 "C/60% RH a 85 °C/60% RH 06 120 2a 4mooks — | 30 *C/60% RH ae 30 *Ci60% RH 2 180 “160% AH 3 168 hours — | 30 *C/60% RH 192" 30 "160% AH 40 60 “Cl60% AH +510 +0 Ey 20 4 72 hours — | <30 °C/60% RH Bo 30 °CI60% FH eo 60 “Cl60% FH 72 16 5 4B hours | <30 °0160% RH ao 30 °C160% RH who 60 °C/60% RH 48 10 “ 6a 24 hours — | 30 *C160% RH Bo 30 °Cr80% RH, 00 160 “C/60% A Time on Label 6 Tou 30 “C/60% FH ToL 30 *O/60% RH Note 1: GAUTION - The “acolratd equivalent” soak requtamonie shall ol be used ull corelaton of damage reaponse, indding elec, eer soak land reflow is established wih the “andar oak rqutemerts othe known activation energy or Gus s 04 -0.48 eV. Acewwraiedwosk es. may vary do to maori proparies, eg. ld compound, encapelrt te. JEDEC cecursent JESDZ2-A120 proves a mchod ordering te ‘feion coats Note 2: The standard soak te includes a defaut value of 24 hous lor semiconductor mancfacture's exposure tire (MET) between bako and bag and Incas the maximum ine allowed ato the bag al he dtibto' acy. the actual MET isle than 24 nous the soak tm may bo raduce. For oa condlons of 20 “C/6O% RH the soak time Is reduced by onw hue for ‘ech hour te MET flees than 24 hours. For sak conan of 6D “C/6D%s FH, the soak ine is educed by one hour for each ve hours te ME tess than 28 hours ‘We actus! MET is gros than 2¢ hours the soak me must be ceased soak conden are 20 “CEOs RH, he soak ime i moreased one hour foreach nou thal he actual MET oxtseds 24 hous I oak conten are 60 “ClS0% FAH, the soak nei reused one hour foreach va Rous that he actual MET excesde 24 hours. Note 3: Supplier may extond he soak tas a their on rik 8.6 Reflow Not sooner than 15 minutes and not longer than four hours after removal from the temperature/humidity chamber, subject the sample to three cycles of the appropriate reflow conditions as defined in Table 5-2 and Figure 5-1. If the timing between removal from the temperature/humidity chamber and initial reflow cannot be met then the parts must be rebaked and resoaked according to 5.4 and 5.5. The time between reflows shall be five minutes minimum and 60 minutes 5.7 Final External Visual Examine the devices using an optical microscope (40X) to look for extemal cracks. ‘5.8 Final Electrical Test Perform appropriate electrical vesting on all devices, ¢.g., data shect values, in-house specifica tions, etc. 5.9 Final Acoustic Microscopy Perform scanning acoustic microscope analysis on all devices.IPCWEDES J-$T0-0206 Table 5-2 Classification Reflaw Profiles sly 2008 ‘Temperature (ip) Profile Feature 'SR-Pb Eutestic Assembly Pb-Free Assembly ‘Average Ramp-Up Rate scynaoori mes. + Clsscond max (ms © T) 8 *Oisecond Cisecons Preheat = Temperature Min (Tein) 100°C 150°C = Temperature Max (TS) 150°C 200°C = THM (San 10 Spas) 60-120 seconds {60-180 seconds Time maintained above: = Temperature (T,) tas°c 217°C = Time (1) 60-150 seconds {60-150 soconds Paal/Classiicaton Temperature (TB) ‘See Table 4.1 ‘See Table 42 Tine warin § 1 of actual Peak 10-30 seconds 20-40 seconds Ramp-Down Rate 6 “Cisecond max. 6 “Cisocond max, [Time 25 °C to Peak Temperature minutes max @ minutos max. Note 1: Allempersues refer to topside ofthe peckape, measured onthe package body surace Temperature —> t 25°C to Peak Time => Critical Zone! IT, to Tp Figure 1 Classification Reflow Profile 6.1 Failure Criterla If one or more devices in the test sample fail, the package shall be considered to have failed the tested level. A device is considered a failure if it exhibits any of the following: ‘a, External crack visible using 40X optical microscope. . Blectrical test failure. Internal crack that intersects a bond wire, ball bond, or wedge bond. Internal crack extending from any lead finger to any other internal feature (lead finger, chip, die attach paddle). Internal crack extending more than two-thirds (2/3) the distance from any internal feature to the outside of the package.ly 2004 IPOWEDEC J-STD-0200 f£ Changes in package body flatness caused by warpage, swelling or bulging visible to the naked eye, If parts still meet cco-planarity and standoff dimensions they shall be considered passing, Note 1: If intemal eracks are indicated by acoustic microscopy, they must be considered a failure or verified good using Polished cross sections through the identified site. Note 2: For packages known to be sensitive to vertical cracks itis recommended that polished cross sections be used to confirm the nonexistence of near vertical eracks within the told compound or encapsulant. Note 3: Failing SMD packages must be evaluated to a higher numeric level of moisture sensitivity using @ new set of samples. Note 4: If the components pass the requirements of 6.1, and there is no evidence of delamination or cracks observed by scoustie microscopy or other means, the component is considered to pass that level of moisture sensitivity 6.2 Criteria Requiring Further Evaluation To evaluate the impact of delamination on device reliability, the semiconduc- tor manufacturer may either meet the delamination requirements shown in 6.2.1 of perform reliability assessment using JESD22-A113 and JESD47 or the semiconductor manufacturer's in-house procedures. The reliability assessment may con- sist of stress testing, historical generic data analysis, etc. Annex A shows the logic flow diagram for the implementation of these criteria, If the SMD Packages pass electrical tests and there is delamination on the back side of the die paddle, heat spreader, die ‘back side (lead on chip only) but there is no evidence of cracking, or other delamination, and they still meet specified dimensional eriteria, the SMD Packages are considered to pass that level of moisture sensitivity, 6.2.1 Delamination The following delamination changes are measured fom pte-moisture soak to post reflow. A delami= nation change is the change between pre- and postreflow. The percent (%) delamination change is calculated in relation to the total area being evaluated, 6.2.1.1 Metal Leadframe Packages: 4. No delamination on the active side of the die, +. No delamination change >10% on any wire bonding surface of the die paddle (downbond area) of the leadframe of LOC (Lead On Chip) devices, ©. No delamination change >10% along any polymeric film bridging any metallic fearures tha (verifiable by through transmission acoustic microscopy). 4. No delamination/cracking change >10% through the dic attach region in thermally enhanced packages or devices that require electrical contact to the backside of the die. , No surface-breaking feature delaminated over its entire length. A surface-breaking feature includes: lead fingers, tie bars, heat spreader alignment features, heat slugs, etc. is designed to be isolated 2 Substrate Basod Packages (0.9., BGA, LGA, ote.}: a. No delamination on the active side of the die. ». No delamination change >10% on any wire bonding surface of the laminate, . No delamination change >10% along the polymer potting or molding compound/laminate interface for cavity and over- molded packages. No delamination change >10% along the solder mask/laminate resin interface. No delamination change >10% within the laminate, No delaminationeracking change >10% through the die attach region. No delaminatiowcracking between underfill resin and chip or underfll resin and substrate/solder mask. No surface-breaking feature dclaminated over its entire length, A surface-breaking feature includes lead fingers, laminate, laminate metallization, PTH, heat slugs, etc Note: On substrate based packages, the C-mode acoustic image is not easy to interpret. Through transmission acoustic imaging is recommended because itis easier to interpret and more reliable, If it is necessary to verify results or determine at what level in the package the cracking/delamination is occurring, cross-sectional analysis should be used. FR opeIPCWIEDEC J-STD-c200 July 2004 6.3 Fallure Verification All failures should be analyzed to confirm that the failure mechanism is associated with moisture sensitivity. If there are no reflow moisture-sensitive-induced failures in the level selected, the component meets the tested level of moisture sensitivity. If the acoustic microscope scans show failure to any of the criteria listed in 6.2.1, the SMD Packages shall be tested to a higher numeric level of moisture sensitivity or subjected to a reliability assessment using JESD22-A113 and JESDAT or the semiconductor manufacturer’s in-house procedures. 7 MOISTURE/REFLOW SENSITIVITY CLASSIFICATION If a device passes Level 1, itis classified as not moisture sensitive and does not require dry pack If a device fails Level 1 but passes a higher numerical level, itis classified as moisture sensitive and must be dry packed in accordance with J-STD-033. IF a device will only pass Level 6, itis classified as extremely moisture sensitive and dry pack will not provide adequate protection. If this product is shipped, the customer must be advised of its classification. The supplier must also include a ‘warning label with the device indicating that it either be socket mounted, or baked dry within time on label before reflow soldering. The minimum bake time and temperature should be determined from desorption studies of the device under test (see 8.3) 8 OPTIONAL WEIGHT GAIN/LOSS ANALYSIS 8.1 Weight Gain Weight gain analysis (absorption) can be very valuable in determining estimated floor life (the time from removal of a device from dry pack until it absorbs sufficient moisture to be at risk during reflow soldering). Weight loss analysis (desorption) is valuable in determining the bake time required to remove excess moisture from a device 80 that it will no longer be at risk during reflow soldering. Weight gain/loss is calculated using an average for the entire sample. It is recommended that ten (10) devices be used in the sample, (wet weight - dry weightyary weight. (vet weight - dry weight)/wer weight, (present weight - dry weight)/dry weight. (vet weight - present weight)wer weight. Final weight gain Final weight loss Interim weight gain Interim weight loss “Wet” is relative and means the package is exposed {o moisture under specific temperature and humidity conditions. “Dry” is specific and means no additional moisture can be removed from the package at 125 °C. 8.2 Absorption Curve 8.2.1 Read Points The X-axis (time) read points should be selected for plotting the absorption curve. For the early read- ings, points should be relatively short (24 hours or less) because the curve will have a stecp initial slope. Later readings may be spread out further (10 days or more) as the curve becomes asymptotic. The Y-axis (weight gain) should start with “0' and increase to the saturated weight gain. Most devices will reach saturation between 0.3% and 0.4% when stored at 85 °C/ 85% RH. Use the formula in 8.1. Devices shall be kept at room ambient between removal from the oven or chamber and weighing and subsequent reinsertion into the oven or chamber, 8.2.2 Dry Weight The dry weight of the sample should be determined first. Bake the sample for 48 hours minimum at 125 +5/-0 °C to ensure that the devices are dry. Within one (1) hour after removal from the oven, weigh the devices using the optional equipment in 3.7 and determine an average dry weight per 8.1. For small SMDs (less than 1.5 mm total height), devices should be weighed within thirty (30) minutes after removal from oven, 8.2.8 Moisture Soak Within one (1) hour after weighing, place the devices in a clean, dry, shallow container so that the package bodies do not touch each other. Place the devices in the desired temperature/numidity condition for the desired Tength of time. 8.2.4 Readouts Upon removal of the devices from the temperature/humidity chamber, allow devices to cool for at least 15 minutes, Within one (1) hour after removal from the chamber, weigh the devices. For small SMDs (less than 1.5 mm total height), devices should be weighed within thirty (30) minutes after removal from the chamber. After the devices are 8sly 2004 IPOMEDEC J-87D-0200 weighed, follow the procedure in 8.2.3 for placing the devices back in the temperature/humidity chamber, No more than two (@) hours total time should elapse between removal of devices from the temperature/humidity chamber and their return to the chamber. Continue alternating between 8.2.3 and 8.2.4 until the devices reach saturation as indicated by no additional increase in ‘moisture absorption or until soaked to the maximum time of interest. 8.3 Desorption Curve A desorption curve can be plotted using devices that have reached saturation as determined in 8.2. 8.3.1 Road Points The suggested read points on the X-axis are 12 hour intervals, The Y-axis should run from “0” weight gain to the saturated value as determined in 8.2. 8.3.2 Baking Within one (1) hour (but not sooner than fifteen (15) minutes) after removal of the saturated devices from the temperature/humidity chamber, place the devices in a clean, dry, shallow container so that the package bodies do not touch each other. Place the devices in the bake oven at the desired temperature for the desired time. 8.3.3 Readouts At the desired read point; remove the devices from the bake oven. Within one (1) hour after removal of the devices from the bake oven, remove the devices from the container and determine their average weight using the optional ‘equipment in 3.7 and formula in 8.1. ‘Within one (1) hour after weighing the devices, place them in a clean, dry, shallow container so that the package bodies do not touch each other. Return the devices to the bake oven for the desired time. Continue until the devices have lost all their moisture as determined by the dry weight in 8.2.2. © ADDITIONS AND EXCEPTIONS The following details shall be specified in the applicable procurement document 4. Device selection criteria if different from 5.1. b. Test procedure sample size if different from 5.1 . Package types to be evaluated. 4. Any reject criteria (including Scanning Acoustic Microscope criterion) in addition to those shown in Clause 6, . Any preconditioning requirements beyond those shown in Clause 5 Conditions or frequency under which retest is requiredIPCWEDEO J-STD-0206 Annex A Classification Flow —— ves. —“ratainy YS a PAS ato Raab Aeon} atin? aly 2004July 2004 IPGUEDEC J-STD-0200 Acknowledgment ‘Members of the IPC Association Connecting Electronics Industries® IPC Plastic Chip Carrier Cracking Task Group (B-102) and the JEDEC Solid State Technology Association JEDEC JC-14.1 Committee on Reliability Test Methods for Packaged Devices have worked together to develop this document. We would like to thank them for their dedication to this effort. Any Standard involving a complex technology draws material from a vast number of sources. While the prineipel members of the Joint Moisture Classification Working Group are shown below, it is not possible to include all of those who assisted in the evolution of this Standard. To cach of them, the members of the IPC and JEDEC extend their gratitude. IPC Plastic Chip Carrier ‘JEDEG JG 14.1 SJEDEC JC 14 Cracking Task Group Committee Chairman Chairman Chairman Steven R. Martell Jack McCullen Nick Lycoudes Sonosean, Inc. Intel Corporation Freescale Semiconductor Joint Moisture Classification Working Group Members Brent Beamer, Static Control Components, Ine. James Mark Bird, Amor Technology Ine. Michael W. Blazier, Delphi Electronics and Safety Richard W. Boerdner, EJE Research Maurice Brodeur, Analog Devices Ine. Victor J. Brzozowski, Northrop Grumman Corporation Ralph Carbone, Hewlett-Packard ‘Company Srinivas Chada, Ph.D, Jabil Circuit, Inc. ‘Tim Chaudhry, ASAT, Inc. Vicki Chin, Cisco Systems Inc. Quyen Chu, Jabit Circuit, Inc. Chao-Wen Chung, LSI Logic Corp. Andre Clement, SGS Thomson Microelectronics Jefirey C. Colish, Northrop Grumman Corporation Samuel J. Croce, Northrop Grumman Derek D’ Andrade, SMTC ‘Corporation| Gordon Davy, Northrop Grumman Corporation Glenn Dearing, Endicott Interconnect ‘Technologies Inc Robert DiMaggio, Sud-Chemie Performance Package Vincent Dubois, Cogisean Inc. Bernard Ecker, Northrop Grumman Jesper Erland, Terma Elektronik AS Leo G. Feinstein, Leo Feinstein Associates Barry R. Femelius, Agilent ‘Technologies Kim Finch, Boeing Phantom Works Rupert Fischer, Infineon Technologies AG Bill Full, Philips Semiconductors Alelie Funcell, Xilinx, Inc Ranjit Gannamani, AMD, Inc. Jerry Gleason, Hewlett-Packard Company Frank V. Grano, Sanmina-SCI Corporation (Curtis Grosskopf, IBM Corporation Frod Hashemi, Standard Microsystems Corp. George Hawkins, Freescale ‘Semiconductor Brad Hawthorne, Blantee Semiconductor Mario Interrante, IBM Corporation ‘erence Kem, Ambitech International Atshad Khan, Celestica International Tne. Amol Kirtikar, Sud Chemie Performance Pac Glenn A. Koscal, Carsem Mark A. Kwoka, Intersil Corporation Xavier Lambert, Schneider Electric Industries SAS Nick Lycoudes, Freescale ‘Semiconductor James F. Maguire, Intel Corporation Steven R. Martell, Sonosean Inc. ‘Michelle Martin, Sud-Chemie Performance Package Jack MeCullen, Intel Corporation ‘Sean McDermott, Celestica Paul Melville, Philips Semiconductor James H. Moffitt, Moffitt Consulting Services Julio Moral, Jr, Actel Corporation Robert Mulligan, Motorola Ine, Keith G. Newman, Sun Microsystems Ine, John Northrup, BAE Systems Platform Solutions Larry Nye, Texas Instruments Kerry Oren, ITT Industries Deepak K, Pai, C.LD-+, General ‘Dynamics-Advanced Information Ramon R. Reglos, Xilinx, Ine. Charles Reynolds, IBM Corporation Heidi L. Reynolds, Sun Microsystems Inc. Marty Rodriguez, Jabil Circuit, Inc. Michael A. Sandor, Jet Propulsion Laboratory Valeska Schroeder, Pb.D., Hewlett-Packard Company William Sepp, Technic Inc. Dongkai Shangguan, Ph.D., Flextronics Intemational Richard Shook, Agere Systems Inc. Michael Sienicki, ESPEC Corp, Joe Smetana, Alcatel USA Bradley Smith, Allegro MicroSystems Ine. Ralph W. Taylor, Lockheed Martin ‘Maritime Systems ‘Nick Virmani, Naval Research Lab Randall Walberg, National ‘Semiconductor Corp. Michael Westlake, ON Semiconductor James M. Whitehouse, Plexus Corp,IPC ZASSOGATION CONNECTING SESTRGRCS ROUEARSe ‘2248 Sanders Rows, Nortbrock IL 60062-6135 Tel 847-509,9700 Fex 847.509 9788 ven 9e.0g 15N m1 560087-46
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