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N BT E: Problem Solutions

1. This document contains calculations and equations related to intrinsic carrier concentration (ni) and other properties of semiconductors like silicon and gallium arsenide at different temperatures. 2. Equations are provided and used to calculate ni, the intrinsic carrier concentration, for silicon and GaAs at temperatures of 250K, 350K, and for silicon at 100K, 300K, and 500K. ni is also calculated for germanium at 100K, 300K, and 500K. 3. Other properties calculated include the equilibrium carrier concentrations (n0 and p0) for n-type and p-type materials using the doping concentration (Nd or Na) and ni. Examples include calculating

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Lorenz Borja
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0% found this document useful (0 votes)
96 views19 pages

N BT E: Problem Solutions

1. This document contains calculations and equations related to intrinsic carrier concentration (ni) and other properties of semiconductors like silicon and gallium arsenide at different temperatures. 2. Equations are provided and used to calculate ni, the intrinsic carrier concentration, for silicon and GaAs at temperatures of 250K, 350K, and for silicon at 100K, 300K, and 500K. ni is also calculated for germanium at 100K, 300K, and 500K. 3. Other properties calculated include the equilibrium carrier concentrations (n0 and p0) for n-type and p-type materials using the doping concentration (Nd or Na) and ni. Examples include calculating

Uploaded by

Lorenz Borja
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Chapter 1

Problem Solutions

1.1
− E / 2 kT
ni = BT 3 / 2 e g
(a) Silicon
⎡ −1.1 ⎤
ni = ( 5.23 × 1015 ) ( 250 )
3/ 2
(i) exp ⎢ ⎥
⎢⎣ 2 ( 86 × 10−6 ) ( 250 ) ⎥⎦
= 2.067 × 1019 exp [ −25.58]
ni = 1.61× 108 cm −3
⎡ −1.1 ⎤
ni = ( 5.23 × 1015 ) ( 350 )
3/ 2
(ii) exp ⎢ ⎥
⎢⎣ 2 ( 86 × 10−6 ) ( 350 ) ⎥⎦
= 3.425 × 1019 exp [ −18.27 ]
ni = 3.97 ×1011 cm −3

(b) GaAs
⎡ −1.4 ⎤
ni = ( 2.10 × 1014 ) ( 250 )
3/ 2
(i) exp ⎢ ⎥
⎢⎣ 2 ( 86 × 10 ) ( 250 ) ⎥⎦
−6

= ( 8.301× 1017 ) exp [ −32.56]


ni = 6.02 × 103 cm −3

⎡ −1.4 ⎤
ni = ( 2.10 × 1014 ) ( 350 )
3/ 2
(ii) exp ⎢ ⎥
⎢⎣ 2 ( 86 × 10−6 ) ( 350 ) ⎥⎦
= (1.375 × 1018 ) exp [ −23.26]
ni = 1.09 × 108 cm −3

1.2
⎛ − Eg ⎞
a. ni = BT 3 / 2 exp ⎜ ⎟
⎝ 2kT ⎠
⎛ −1.1 ⎞
1012 = 5.23 × 1015 T 3 / 2 exp ⎜ −6 ⎟
⎝ 2(86 × 10 )(T ) ⎠
⎛ 6.40 × 103 ⎞
1.91× 10−4 = T 3 / 2 exp ⎜ − ⎟
⎝ T ⎠
By trial and error, T ≈ 368 K
b. ni = 109 cm −3
⎛ −1.1 ⎞
109 = 5.23 × 1015 T 3 / 2 exp ⎜ ⎟
⎜ 2 ( 86 × 10−6 ) (T ) ⎟
⎝ ⎠
⎛ 6.40 × 103 ⎞
1.91× 10−7 = T 3 / 2 exp ⎜ − ⎟
⎝ T ⎠
By trial and error, T ≈ 268° K

1.3
Silicon
⎡ −1.1 ⎤
ni = ( 5.23 × 1015 ) (100 )
3/ 2
(a) exp ⎢ ⎥
⎢⎣ 2 ( 86 × 10 ) (100 ) ⎥⎦
−6

= ( 5.23 × 1018 ) exp [ −63.95]


ni = 8.79 ×10−10 cm −3

⎡ −1.1 ⎤
ni = ( 5.23 × 1015 ) ( 300 )
3/ 2
(b) exp ⎢ ⎥
⎢⎣ 2 ( 86 × 10−6 ) ( 300 ) ⎥⎦
= ( 2.718 × 1019 ) exp [ −21.32]
ni = 1.5 × 1010 cm −3

⎡ −1.1 ⎤
ni = ( 5.23 × 1015 ) ( 500 )
3/ 2
(c) exp ⎢ ⎥
⎢⎣ 2 ( 86 × 10 ) ( 500 ) ⎥⎦
−6

= ( 5.847 × 1019 ) exp [ −12.79]


ni = 1.63 × 1014 cm −3

Germanium.
⎡ −0.66 ⎤
ni = (1.66 × 1015 ) (100 ) ⎥ = (1.66 × 1018 ) exp [ −38.37 ]
3/ 2
(a) exp ⎢
⎢⎣ 2 ( 86 × 10−6 ) (100 ) ⎥⎦
ni = 35.9 cm −3
⎡ −0.66 ⎤
ni = (1.66 × 1015 ) ( 300 ) ⎥ = ( 8.626 × 1018 ) exp [ −12.79]
3/ 2
(b) exp ⎢
⎢⎣ 2 ( 86 × 10−6 ) ( 300 ) ⎥⎦
ni = 2.40 × 1013 cm −3
⎡ −0.66 ⎤
ni = (1.66 × 1015 ) ( 500 ) ⎥ = (1.856 × 1019 ) exp [ −7.674]
3/ 2
(c) exp ⎢
⎢⎣ 2 ( 86 × 10−6 ) ( 500 ) ⎥⎦
ni = 8.62 ×1015 cm −3

1.4
a. N d = 5 × 1015 cm −3 ⇒ n − type
n0 = N d = 5 × 1015 cm −3

n 2 (1.5 × 10 )
10 2

p0 = i = ⇒ p0 = 4.5 × 10 4 cm −3
n0 5 × 1015
b. N d = 5 × 1015 cm −3 ⇒ n − type
no = N d = 5 × 1015 cm −3
⎛ −1.4 ⎞
ni = ( 2.10 × 1014 ) ( 300 )
3/ 2
exp ⎜ −6 ⎟
⎝ 2(86 × 10 )(300) ⎠
= ( 2.10 × 1014 ) ( 300 ) (1.65 ×10 )
3/ 2 −12

= 1.80 × 106 cm −3

ni2 (1.8 × 10 )
6 2

p0 = = ⇒ p0 = 6.48 × 10 −4 cm −3
n0 5 × 1015

1.5
(a) n-type
(b) no = N d = 5 × 1016 cm −3

n 2 (1.5 × 10 )
10 2

po = i = = 4.5 × 103 cm −3
no 5 × 1016
(c) no = N d = 5 × 1016 cm −3
From Problem 1.1(a)(ii) ni = 3.97 × 1011 cm −3

po =
( 3.97 × 10 ) 11 2

= 3.15 × 106 cm −3
5 × 1016

1.6
a. N a = 1016 cm −3 ⇒ p − type
p0 = N a = 1016 cm −3

n 2 (1.5 × 10 )
10 2

n0 = i = ⇒ n0 = 2.25 × 10 4 cm −3
p0 1016
b. Germanium
N a = 1016 cm −3 ⇒ p − type
p0 = N a = 1016 cm −3
⎛ −0.66 ⎞
ni = (1.66 × 1015 ) ( 300 )
3/ 2
exp ⎜ ⎟
⎜ 2 ( 86 × 10−6 ) ( 300 ) ⎟
⎝ ⎠
= (1.66 × 1015 ) ( 300 ) ( 2.79 × 10 )
3/ 2 −6

= 2.4 × 1013 cm −3

n 2 ( 2.4 × 10 )
13 2

n0 = i = ⇒ n0 = 5.76 × 1010 cm −3
p0 1016

1.7
(a) p-type
(b) po = N a = 2 × 1017 cm −3

ni2 (1.5 × 10 )
10 2

no = = = 1.125 × 103 cm −3
po 2 × 1017
(c) po = 2 × 1017 cm −3
From Problem 1.1(a)(i) ni = 1.61 × 108 cm −3

no =
(1.61×10 ) 8 2

= 0.130 cm −3
2 × 1017

1.8
(a) no = 5 × 1015 cm −3

ni2 (1.5 × 10 )
10 2

po = = ⇒ po = 4.5 × 104 cm −3
no 5 × 1015
(b) no  po ⇒ n-type
(c) no ≅ N d = 5 × 1015 cm −3

1.9
a. Add Donors
N d = 7 × 1015 cm −3
b. Want po = 106 cm −3 = ni2 / N d
So ni2 = (106 )( 7 × 1015 ) = 7 × 10 21
⎛ − Eg ⎞
= B 2T 3 exp ⎜ ⎟
⎝ kT ⎠
⎛ −1.1 ⎞
7 × 1021 = ( 5.23 × 1015 ) T 3 exp ⎜
2

⎜ ( 86 × 10 ) (T ) ⎟
− 6
⎝ ⎠
By trial and error, T ≈ 324° K

1.10
I = J ⋅ A = σ EA
I = ( 2.2 )(15 ) (10−4 ) ⇒ I = 3.3 mA

1.11
J 85
J =σE ⇒σ = =
E 12
σ = 7.08 (ohm − cm) −1

1.12
1 1 1
g≈ ⇒ Na = =
eμ p N a eμ p g (1.6 × 10 −19 ) ( 480 )( 0.80 )
N a = 1.63 × 10 16 cm −3

1.13
σ = eμ n N d
σ ( 0.5)
Nd = =
eμ n (1.6 ×10 ) (1350 )
−19

N d = 2.31× 1015 cm −3

1.14
(a) For n-type, σ ≅ eμ n N d = (1.6 × 10 −19 ) ( 8500 ) N d
For 1015 ≤ N d ≤ 1019 cm −3 ⇒ 1.36 ≤ σ ≤ 1.36 × 104 ( Ω − cm )
−1

(b) J = σ E = σ ( 0.1) ⇒ 0.136 ≤ J ≤ 1.36 × 103 A / cm2

1.15
dn Δn
J n = eDn = eDn
dx Δx
⎡10 15 −10 2 ⎤
= (1.6 × 10 −19 ) (180 ) ⎢ −4 ⎥
⎣ 0.5 × 10 ⎦
J n = 576 A/cm 2

1.16
dp
J p = −eD p
dx
⎛ −1 ⎞ ⎛ −x ⎞
= −eD p (10 15 ) ⎜ ⎟ exp ⎜ ⎟
⎜ Lp ⎟ ⎜ Lp ⎟
⎝ ⎠ ⎝ ⎠

Jp =
(1.6 ×10 ) (15) (10 ) exp ⎛ − x ⎞
−19 15

⎜⎜ ⎟⎟
10 × 10 −4 ⎝ Lp ⎠
− x / Lp
J p = 2.4 e
(a) x=0 J p = 2.4 A/cm2
(b) x = 10 μ m J p = 2.4 e−1 = 0.883 A/cm 2
(c) x = 30 μ m J p = 2.4 e−3 = 0.119 A/cm 2

1.17
a. N a = 1017 cm −3 ⇒ po = 1017 cm −3

ni2 (1.8 × 10 )
6 2

no = = ⇒ no = 3.24 × 10−5 cm −3
po 1017
b. n = no + δ n = 3.24 × 10 −5 + 1015 ⇒ n = 1015 cm −3
p = po + δ p = 1017 + 1015 ⇒ p = 1.01× 1017 cm −3

1.18
⎛N N ⎞
(a) Vbi = VT ln ⎜ a 2 d ⎟
⎝ ni ⎠
⎡ (10 16 )(10 16 ) ⎤
= ( 0.026 ) ln ⎢ ⎥ = 0.697 V
⎢ (1.5 × 10 10 )2 ⎥
⎣ ⎦
⎡ (10 18 )(10 16 ) ⎤
(b) Vbi = ( 0.026 ) ln ⎢ ⎥ = 0.817 V
⎢ (1.5 × 10 10 )2 ⎥
⎣ ⎦
⎡ (10 18 )(10 18 ) ⎤
(c) Vbi = ( 0.026 ) ln ⎢ ⎥ = 0.937 V
⎢ (1.5 × 10 10 )2 ⎥
⎣ ⎦

1.19
⎛N N ⎞
Vbi = VT ln ⎜ a 2 d ⎟
⎝ ni ⎠
⎡ (1016 )(1016 ) ⎤
a. Vbi = ( 0.026 ) ln ⎢ ⎥ ⇒ Vbi = 1.17 V
⎢⎣ (1.8 × 10 ) ⎥⎦
6 2

⎡ (1018 )(1016 ) ⎤
b. Vbi = ( 0.026 ) ln ⎢ ⎥ ⇒ Vbi = 1.29 V
⎢⎣ (1.8 × 10 ) ⎥⎦
6 2

⎡ (1018 )(1018 ) ⎤
c. Vbi = ( 0.026 ) ln ⎢ ⎥ ⇒ Vbi = 1.41 V
⎢⎣ (1.8 × 10 ) ⎥⎦
6 2

1.20
⎛ Na Nd ⎞ ⎡ N a (1016 ) ⎤
Vbi = VT ln ⎜ 2 ⎟ = ( 0.026 ) ln ⎢ ⎥
⎢⎣ (1.5 × 10 ) ⎥⎦
10 2
⎝ ni ⎠
For N a = 1015 cm −3 , Vbi = 0.637 V
For N a = 1018 cm −3 , Vbi = 0.817 V
Vbi (V)

0.817

0.637

1015 1016 1017 1018 Na(cm3)

1.21
⎛ T ⎞
kT = (0.026) ⎜ ⎟
⎝ 300 ⎠
T kT (T)3/2
200 0.01733 2828.4
250 0.02167 3952.8
300 0.026 5196.2
350 0.03033 6547.9
400 0.03467 8000.0
450 0.0390 9545.9
500 0.04333 11,180.3

⎛ −1.4 ⎞
ni = ( 2.1× 1014 )(T 3 / 2 ) exp ⎜ ⎟
⎜ 2 ( 86 × 10 ) (T ) ⎟
− 6
⎝ ⎠
⎛N N ⎞
Vbi = VT ln ⎜ a 2 d ⎟
⎝ ni ⎠

T ni Vbi
200 1.256 1.405
250 6.02 × 103 1.389
300 1.80 × 106 1.370
350 1.09 × 108 1.349
400 2.44 × 109 1.327
450 2.80 × 1010 1.302
500 2.00 × 1011 1.277

Vbi (V)

1.45

1.35

1.25

200 250 300 350 400 450 500 T(C)

1.22
−1/ 2
⎛ V ⎞
C j = C jo ⎜ 1 + R ⎟
⎝ Vbi ⎠
⎡ (1.5 × 10 16 )( 4 × 10 15 ) ⎤
Vbi = ( 0.026 ) ln ⎢ ⎥ = 0.684 V
⎢⎣ (1.5 ×10 10 ) 2 ⎥⎦
−1/ 2
⎛ 1 ⎞
(a) C j = ( 0.4 ) ⎜ 1 + ⎟ = 0.255 pF
⎝ 0.684 ⎠
−1/ 2
⎛ 3 ⎞
(b) C j = ( 0.4 ) ⎜ 1 + ⎟ = 0.172 pF
⎝ 0.684 ⎠
−1/ 2
⎛ 5 ⎞
(c) C j = ( 0.4 ) ⎜ 1 + ⎟ = 0.139 pF
⎝ 0.684 ⎠

1.23
−1 / 2
⎛ V ⎞
(a) C j = C jo ⎜1 + R ⎟
⎝ Vbi ⎠
−1 / 2
⎛ 5 ⎞
For VR = 5 V, C j = (0.02) ⎜ 1 + ⎟ = 0.00743 pF
⎝ 0. 8 ⎠
−1 / 2
⎛ 1. 5 ⎞
For VR = 1.5 V, C j = (0.02) ⎜1 + ⎟ = 0.0118 pF
⎝ 0. 8 ⎠
0.00743 + 0.0118
C j (avg ) = = 0.00962 pF
2
vC ( t ) = vC ( final ) + ( vC ( initial ) − vC ( final ) ) e − t / τ
where
τ = RC = RC j (avg ) = (47 × 103 )(0.00962 × 10−12 )
or
τ = 4.52 ×10−10 s
Then vC ( t ) = 1.5 = 0 + ( 5 − 0 ) e − ti / τ
5 + r /τ ⎛ 5 ⎞
= e 1 ⇒ t1 = τ ln ⎜ ⎟
1.5 ⎝ 1.5 ⎠
−10
t1 = 5.44 × 10 s
(b) For VR = 0 V, Cj = Cjo = 0.02 pF
−1/ 2
⎛ 3.5 ⎞
For VR = 3.5 V, C j = ( 0.02 ) ⎜ 1 + ⎟ = 0.00863 pF
⎝ 0.8 ⎠
0.02 + 0.00863
C j (avg ) = = 0.0143 pF
2
τ = RC j ( avg ) = 6.72 ×10−10 s
vC ( t ) = vC ( final ) + ( vC ( initial ) − vC ( final ) ) e − t / τ

(
3.5 = 5 + (0 − 5)e − t2 /τ = 5 1 − e − t2 /τ )
−10
so that t2 = 8.09 × 10 s

1.24
⎡ (1018 )(1015 ) ⎤
Vbi = ( 0.026 ) ln ⎢ ⎥ = 0.757 V
⎢ (1.5 × 1010 )2 ⎥
⎣ ⎦
a. VR = 1 V
−1/ 2
⎛ 1 ⎞
C j = (0.25) ⎜ 1 + ⎟ = 0.164 pF
⎝ 0.757 ⎠
1 1
f0 = =
2π LC 2π ( 2.2 ×10 )( 0.164 ×10 )
−3 −12

f 0 = 8.38 MHz
b. VR = 10 V
−1/ 2
⎛ 10 ⎞
C j = (0.25) ⎜ 1 + ⎟ = 0.0663 pF
⎝ 0.757 ⎠
1
f0 =
2π ( 2.2 × 10 )( 0.0663 × 10−12 )
−3

f 0 = 13.2 MHz

1.25
⎡ ⎛V ⎞ ⎤ ⎛ VD ⎞
a. I = I S ⎢ exp ⎜ D ⎟ − 1⎥ − 0.90 = exp ⎜ ⎟ −1
⎣ ⎝ VT ⎠ ⎦ ⎝ VT ⎠
⎛V ⎞
exp ⎜ D ⎟ = 1 − 0.90 = 0.10
⎝ VT ⎠
VD = VT ln ( 0.10 ) ⇒ VD = −0.0599 V
b.
⎡ ⎛ VF ⎞ ⎤ ⎛ 0.2 ⎞
⎢ exp ⎜ ⎟ − 1⎥ exp ⎜ ⎟ −1
⎝ VT ⎠ ⎦
= S ⋅⎣ ⎝ 0.026 ⎠
IF I
=
IR IS ⎡ ⎛ VR ⎞ ⎤ ⎛ −0.2 ⎞
⎢exp ⎜ ⎟ − 1⎥ exp ⎜⎝ 0.026 ⎟⎠ − 1
⎣ ⎝ VT ⎠ ⎦
2190
=
−1
IF
= 2190
IR

1.26
a.
⎛ 0.5 ⎞
I ≅ (10−11 ) exp ⎜ ⎟ ⇒ I = 2.25 mA
⎝ 0.026 ⎠
⎛ 0.6 ⎞
I = (10−11 ) exp ⎜ ⎟ ⇒ I = 0.105 A
⎝ 0.026 ⎠
⎛ 0.7 ⎞
I = (10−11 ) exp ⎜ ⎟ ⇒ I = 4.93 A
⎝ 0.026 ⎠
b.
⎛ 0.5 ⎞
I ≅ (10−13 ) exp ⎜ ⎟ ⇒ I = 22.5 μ A
⎝ 0.026 ⎠
⎛ 0.6 ⎞
I = (10−13 ) exp ⎜ ⎟ ⇒ I = 1.05 mA
⎝ 0.026 ⎠
⎛ 0.7 ⎞
I = (10−13 ) exp ⎜ ⎟ ⇒ I = 49.3 mA
⎝ 0.026 ⎠

1.27
(a) (
I = I S eVD / VT − 1 )
150 × 10 −6
= 10 −11
(e VD / VT
)
− 1 ≅ 10−11 eVD / VT
⎛ 150 × 10−6 ⎞ ⎛ 150 × 10−6 ⎞
Then VD = VT ln ⎜ −11 ⎟ = (0.026) ln ⎜ −11 ⎟
⎝ 10 ⎠ ⎝ 10 ⎠
Or VD = 0.430 V
(b)
⎛ 150 × 10−6 ⎞
VD = VT ln ⎜ −13 ⎟
⎝ 10 ⎠
Or VD = 0.549 V

1.28
⎛ 0.7 ⎞
(a) 10−3 = I S exp ⎜ ⎟
⎝ 0.026 ⎠
I S = 2.03 × 10 −15 A
(b)
VD I D ( A ) ( n = 1) I D ( A )( n = 2 )
0.1 9.50 ×10 −14 1.39 ×10 −14
0.2 4.45 ×10 −12 9.50 ×10 −14
0.3 2.08 ×10 −10 6.50 ×10 −13
0.4 9.75 ×10 −9 4.45 ×10 −12
0.5 4.56 ×10 −7 3.04 ×10 −11
0.6 2.14 ×10 −5 2.08 ×10 −10
0.7 10 −3 1.42 ×10 −9

1.29
(a)
I S = 10 −12 A
VD(v) ID(A) log10ID
0.10 4.68 ×10−11 −10.3
0.20 2.19 ×10−9 −8.66
0.30 1.03 ×10−7 −6.99
0.40 4.80 ×10−6 −5.32
0.50 2.25 ×10−4 −3.65
0.60 1.05 ×10−2 −1.98
0.70 4.93 ×10−1 −0.307
(b)
I S = 10 −14 A
VD(v) ID(A) log10ID
0.10 4.68 ×10−13 −12.3
0.20 2.19 ×10−11 −10.66
0.30 1.03 ×10−9 −8.99
0.40 4.80 ×10−8 −7.32
0.50 2.25 ×10−6 −5.65
0.60 1.05 ×10−4 −3.98
0.70 4.93 ×10−3 −2.31

1.30
a.
ID2 ⎛ V − VD1 ⎞
= 10 = exp ⎜ D 2 ⎟
I D1 ⎝ VT ⎠
ΔVD = VT ln (10) ⇒ ΔVD = 59.9 mV ≈ 60 mV
b. ΔVD = VT ln (100 ) ⇒ ΔVD = 119.7 mV ≈ 120 mV

1.31
⎛I ⎞ ⎛ 150 × 10−6 ⎞
(a) (i) VD = Vt ln ⎜ D ⎟ = ( 0.026 ) ln ⎜ −15 ⎟
⎝ IS ⎠ ⎝ 10 ⎠
VD = 0.669 V
⎛ 25 × 10−6 ⎞
(ii) VD = ( 0.026)ln ⎜ −15 ⎟
⎝ 10 ⎠
VD = 0.622 V
⎛ 0.2 ⎞
(b) (i) I D = (10−15 )exp ⎜ −12
⎟ = 2.19 × 10 A
⎝ 0.026 ⎠
(ii) ID = 0
(iii) I D = −10 −15 A
(iv) I D = −10 −15 A

1.32
⎛I ⎞ ⎛ 2 × 10−3 ⎞
VD = Vt ln ⎜ D ⎟ = (0 . 026) ln ⎜ −14 ⎟
= 0.6347 V
⎝ IS ⎠ ⎝ 5 × 10 ⎠
⎛ 2 × 10−3 ⎞
VD = (0.026) ln ⎜ −12 ⎟
= 0.5150 V
⎝ 5 × 10 ⎠
0.5150 ≤ VD ≤ 0.6347 V

1.33
⎛V ⎞
(a) I D = I S exp ⎜ D ⎟
⎝ Vt ⎠
⎛ 1.10 ⎞
12 ×10−3 = I S exp ⎜ −21
⎟ ⇒ I S = 5.07 × 10 A
⎝ 0.026 ⎠
⎛ 1.0 ⎞
I D = ( 5.07 × 10−21 ) exp ⎜ ⎟
(b) ⎝ 0.026 ⎠
I D = 2.56 × 10−4 A = 0.256 mA

1.34
⎛ 1.0 ⎞
(a) I D = 10−23 exp ⎜ −7
⎟ = 5.05 × 10 A
⎝ 0.026 ⎠
⎛ 1.1 ⎞
(b) I D = 10−23 exp ⎜ −5
⎟ = 2.37 × 10 A
⎝ 0 .026 ⎠
⎛ 1 .2 ⎞
(c) I D = 10−23 exp ⎜ −3
⎟ = 1.11× 10 A
⎝ 0.026 ⎠

1.35
IS doubles for every 5C increase in temperature.
I S = 10 −12 A at T = 300K
For I S = 0.5 × 10 −12 A ⇒ T = 295 K
For I S = 50 × 10 −12 A, (2) n = 50 ⇒ n = 5.64
Where n equals number of 5C increases.
Then ΔT = ( 5.64 )( 5 ) = 28.2 K
So 295 ≤ T ≤ 328.2 K
1.36
I S (T )
= 2ΔT / 5 , ΔT = 155° C
I S (−55)
I S (100)
= 2155 / 5 = 2.147 × 109
I S (−55)
VT @100°C ⇒ 373°K ⇒ VT = 0.03220
VT @− 55°C ⇒ 216°K ⇒ VT = 0.01865
⎛ 0.6 ⎞
exp ⎜ ⎟
I D (100) ⎝ 0.0322 ⎠
= (2.147 × 109 ) ×
I D (−55) ⎛ 0.6 ⎞
exp ⎜ ⎟
⎝ 0.01865 ⎠

=
( 2.147 ×10 )(1.237 ×10 )
9 8

( 9.374 ×10 ) 13

I D (100)
= 2.83 × 103
I D (−55)

1.37
3.5 = ID (105) + VD
⎛ V ⎞ ⎛ ID ⎞
(a) I D = 5 ×10−9 exp ⎜ D ⎟ ⇒ VD = 0.026 ln ⎜ −9 ⎟
⎝ 0.026 ⎠ ⎝ 5 × 10 ⎠
Trial and error.
VD ID VD
0.50 3 ×10 −5 0.226
0.40 3.1×10−5 0.227
0.250 3.25 ×10 −5 0.228
0.229 3.271×10 −5 0.2284
0.2285 3.2715 ×10 −5 0.2284

So VD ≅ 0.2285 V
I D ≅ 3.272 × 10−5 A

(b) I D = I S = 5 × 10−9 A
VR = ( 5 × 10−9 )(105 ) = 5 × 10−4 V
VD = 3.4995 V

1.38
⎛ I ⎞
10 = I D ( 2 × 10 4 ) + VD and VD = ( 0.026 ) ln ⎜ D−12 ⎟
⎝ 10 ⎠
Trial and error.
VD(v) ID(A) VD(v)
0.50 4.75 ×10−4 0.5194
0.517 4.7415 ×10 −4 0.5194
0.5194 4.740 ×10−4 0.5194

VD = 0.5194 V
I D = 0.4740 mA

1.39
I s = 5 × 10 −13 A
R1  50 K

 
1.2 V R2  30 K VD
 ID 

RTH  R1  R2  18.75 K

 
VTH VD
 
ID

⎛ R2 ⎞ ⎛ 30 ⎞
VTH = ⎜ ⎟ (1.2) = ⎜ ⎟ (1.2) = 0.45 V
⎝ R1 + R2 ⎠ ⎝ 80 ⎠
⎛I ⎞
0.45 = I D RTH + VD , VD = VT ln ⎜ D ⎟
⎝ IS ⎠
By trial and error:
I D = 2.56 μ A, VD = 0.402 V

1.40
 VD  VD

 
I1
VI 1K V0
 IR I2 

I S = 2 × 10 −13 A
V0 = 0.60 V
⎛V ⎞ ⎛ 0.60 ⎞
I 2 = I S exp ⎜ 0 ⎟ = ( 2 × 10−13 ) exp ⎜ ⎟
⎝ VT ⎠ ⎝ 0.026 ⎠
= 2.105 mA
0.6
IR = = 0.60 mA
1K
I1 = I 2 + I R = 2.705 mA
⎛I ⎞ ⎛ 2.705 × 10−3 ⎞
VD = VT ln ⎜ 1 ⎟ = (0.026) ln ⎜ −13 ⎟
⎝ IS ⎠ ⎝ 2 × 10 ⎠
= 0.6065
VI = 2VD + V0 ⇒ VI = 1.81 V

1.41
(a) Assume diode is conducting.
Then, VD = Vγ = 0.7 V
0. 7
So that I R 2 = ⇒ 23.3 μ A
30
1.2 − 0.7
I R1 = ⇒ 50 μ A
10
Then I D = I R1 − I R 2 = 50 − 23.3
Or I D = 26.7 μ A
(b) Let R1 = 50 k Ω Diode is cutoff.
30
VD = ⋅ (1.2) = 0.45 V
30 + 50
Since VD < Vγ , I D = 0

1.42
5 V

3 k 2 k

ID
VB VAVr VA

2 k 2 k

A&VA:
5 − VA V
(1) = ID + A
2 2
A& VA − Vr
5 − (VA − Vr ) (VA − Vr )
(2) + ID =
2 2
5 − (VA − Vr ) ⎡ 5 − VA VA ⎤ VA − Vr
So +⎢ − ⎥=
3 ⎣ 2 2⎦ 2
Multiply by 6:
10 − 2 (VA − Vr ) + 15 − 6VA = 3 (VA − Vr )
25 + 2Vr + 3Vr = 11VA
(a) Vr = 0.6 V
11VA = 25 + 5 ( 0.6 ) = 28 ⇒ VA = 2.545 V
5 − VA VA
From (1) I D = − = 2.5 − VA ⇒ I D Neg. ⇒ I D = 0
2 2
Both (a), (b) I D = 0
2
VA = 2.5, VB = ⋅ 5 = 2 V ⇒ VD = 0.50 V
5

1.43
Minimum diode current for VPS (min)
I D (min) = 2 mA, VD = 0.7 V
0.7 5 − 0.7 4.3
I2 = , I1 = =
R2 R1 R1
We have I1 = I 2 + I D
4.3 0.7
so (1) = +2
R1 R2
Maximum diode current for VPS (max)
P = I DVD 10 = I D ( 0.7 ) ⇒ I D = 14.3 mA
I1 = I 2 + I D
or
9.3 0.7
(2) = + 14.3
R1 R2
9.3 4.3
Using Eq. (1), = − 2 + 14.3 ⇒ R1 = 0.41 kΩ
R1 R1
Then R2 = 82.5Ω 82.5Ω

1.44
(a) Vo = 0.7 V
5 − 0.7
I= ⇒ I = 0.215 mA
20
10 − 0.7
(b) I= ⇒ I = 0.2325 mA
20 + 20
Vo = I (20 K) − 5 ⇒ Vo = −0.35 V
10 − 0.7
(c) I= ⇒ I = 0.372 mA
5 + 20
Vo = 0.7 + I (20) − 8 ⇒ Vo = +0.14 V
(d) I =0
Vo = I (20) − 5 ⇒ Vo = −5 V

1.45
⎛ ⎞
5 = I ( 2 × 109 ) + VD
I
(a) VD = ( 0.026 ) ln ⎜ −12 ⎟
⎝ 2 ×10 ⎠
VD → ID → VD Vo = VD = 0.482 V
0.6 2.2 ×10−4 0.481
0.482 2.259 ×10−4 0.482 I = 0.226 mA

⎛ ⎞
10 = I ( 4 × 10 4 ) + VD
I
(b) VD = ( 0.026 ) ln ⎜ −12 ⎟
⎝ 2 ×10 ⎠
Vo → I → VD VD = 0.483 V
0.5 2.375 ×10−4 0.4834 I = 0.238 mA
0.484 2.379 ×10−4 0.4834 Vo = −0.24 V

⎛ ⎞
10 = I ( 2.5 × 10 4 ) + VD
I
(c) VD = ( 0.026 ) ln ⎜ −12 ⎟
⎝ 2 × 10 ⎠
Vo → I → VD VD = 0.496 V
0.480 3.808 ×10−4 0.496 I = 0.380 mA
0.496 3.802 ×10 −4 0.496 Vo = −0.10 V

(d) I = − I S ⇒ I = 2 × 10−12 A
Vo ≅ −5 V

1.46
(a) Diode forward biased VD = 0.7 V
5 = (0.4)(4.7) + 0.7 + V ⇒ V = 2.42 V
(b) P = I ⋅ VD = (0.4)(0.7) ⇒ P = 0.28 mω

1.47
0.65
(a) I R 2 = I D1 = = 0.65 mA = I D1
1
ID2 = 2(0.65) = 1.30 mA
VI − 2Vr − V0 5 − 3(0.65)
ID2 = = = 1.30 ⇒ R1 = 2.35 K
R1 R1
0.65
(b) IR2 = = 0.65 mA
1
8 − 3(0.65)
ID2 = ⇒ I D 2 = 3.025 mA
2
I D1 = I D 2 − I R 2 = 3.025 − 0.65
I D1 = 2.375 mA

1.48
VT (0.026)
a. τd = = = 0.026 kΩ = 26Ω
I DQ 1
id = 0.05 I DQ = 50 μ A peak-to-peak
vd = idτ d = (26)(50) μ A ⇒ vd = 1.30 mV peak-to-peak

(0.026)
b. For I DQ = 0.1 mA ⇒ τ d = = 260Ω
0. 1
id = 0.05 I DQ = 5 μ A peak-to-peak
vd = idτ d = (260)(5) μ V ⇒ vd = 1.30 mV peak-to-peak

1.49
RS


␯S  ␯d
 

a. diode resistance rd = VT /I
⎛ ⎞
⎛ rd ⎞ ⎜ VT /I ⎟
vd = ⎜ ⎟ vS = ⎜ V ⎟ vS
⎝ rd + RS ⎠ ⎜⎜ T + RS ⎟⎟
⎝ I ⎠
⎛ VT ⎞
vd = ⎜ ⎟ vs = vo
⎝ VT + IRS ⎠

b. RS = 260Ω
v0 ⎛ VT ⎞ 0.026 v
I = 1 mA, =⎜ ⎟= ⇒ 0 = 0.0909
vS ⎝ VT + IRS ⎠ 0.026 + (1)(0.26) vS
v 0.026 v
I = 0.1 mA, 0 = ⇒ 0 = 0.50
vs 0.026 + ( 0.1)( 0.26 ) vS
v0 0.026 v
I = 0.01 mA. = ⇒ 0 = 0.909
vS 0.026 + (0.01)(0.26) vS

1.50
⎛V ⎞ ⎛ I ⎞
I ≅ I S exp ⎜ a ⎟ , Va = VT ln ⎜ ⎟
⎝ VT ⎠ ⎝ IS ⎠
⎛ 100 × 10−6 ⎞
pn junction, Va = (0.026) ln ⎜ −14 ⎟
⎝ 10 ⎠
Va = 0.599 V
⎛ 100 × 10−6 ⎞
Schottky diode, Va = (0.026) ln ⎜ −9 ⎟
⎝ 10 ⎠
Va = 0.299 V

1.51
Schottky

pn junction
I

⎛V ⎞
Schottky: I ≅ I S exp ⎜ a ⎟
⎝ VT ⎠
⎛ I ⎞ ⎛ 0.5 × 10−3 ⎞
Va = VT ln ⎜ ⎟ = (0.026) ln ⎜ −7 ⎟
⎝ IS ⎠ ⎝ 5 × 10 ⎠
= 0.1796 V
Then
Va of pn junction = 0.1796 + 0.30
= 0.4796
I 0.5 × 10−3
IS = =
⎛V ⎞ ⎛ 0.4796 ⎞
exp ⎜ a ⎟ exp ⎜ ⎟
⎝ VT ⎠ ⎝ 0.026 ⎠
I S = 4.87 × 10 −12 A

1.52

(a)
 VD 

I1

0.5 mA
I2

I1 + I 2 = 0.5 × 10 −3
⎛V ⎞ ⎛ VD ⎞
5 × 10−8 exp ⎜ D −12
⎟ + 10 exp ⎜ ⎟ = 0.5 × 10
−3

⎝ VT ⎠ ⎝ T ⎠
V
⎛V ⎞
5.0001× 10 −8 exp ⎜ D ⎟ = 0.5 × 10 −3
⎝ VT ⎠
⎛ 0.5 × 10−3 ⎞
VD = (0.026) ln ⎜ −8 ⎟
⇒ VD = 0.2395
⎝ 5.0001× 10 ⎠
Schottky diode, I 2 = 0.49999 mA
pn junction, I1 = 0.00001 mA
(b)
 VD1   VD2 

I
 0.90 V 

⎛V ⎞ ⎛V ⎞
I = 10 −12 exp ⎜ D1 ⎟ = 5 × 10−8 exp ⎜ D 2 ⎟
⎝ VT ⎠ ⎝ VT ⎠
VD1 + VD 2 = 0.9
⎛V ⎞ ⎛ 0.9 − VD1 ⎞
10−12 exp ⎜ D1 ⎟ = 5 × 10−8 exp ⎜ ⎟
⎝ VT ⎠ ⎝ VT ⎠
⎛ 0.9 ⎞ ⎛ −VD1 ⎞
= 5 ×10−8 exp ⎜ ⎟ exp ⎜ ⎟
⎝ VT ⎠ ⎝ VT ⎠
⎛ 2V ⎞ ⎛ 5 × 10−8 ⎞ ⎛ 0.9 ⎞
exp ⎜ D1 ⎟ = ⎜ −12 ⎟
exp ⎜ ⎟
⎝ VT ⎠ ⎝ 10 ⎠ ⎝ 0.026 ⎠
⎛ 5 × 10−8 ⎞
2VD1 = VT ln ⎜ −12 ⎟
+ 0.9 = 1.1813
⎝ 10 ⎠
VD1 = 0.5907 pn junction
VD 2 = 0.3093 Schottky diode
⎛ 0.5907 ⎞
I = 10−12 exp ⎜ ⎟ ⇒ I = 7.35 mA
⎝ 0.026 ⎠

1.53
R  0.5 K
V0

 I

VPS  10 V VZ RL
 
IL
IZ

VZ = VZ 0 = 5.6 V at I Z = 0.1 mA
rZ = 10Ω
I Z rZ = ( 0.1)(10 ) = 1 mV
VZ0 = 5.599
a. RL → ∞ ⇒
10 − 5.599 4.401
IZ = = = 8.63 mA
R + rZ 0.50 + 0.01
VZ = VZ 0 + I Z rZ = 5.599 + ( 0.00863)(10 )
VZ = V0 = 5.685 V
11 − 5.599
b. VPS = 11 V ⇒ I Z = = 10.59 mA
0.51
VZ = V0 = 5.599 + ( 0.01059 )(10 ) = 5.7049 V
9 − 5.599
VPS = 9 V ⇒ I Z = = 6.669 mA
0.51
VZ = V0 = 5.599 + ( 0.006669 )(10 ) = 5.66569 V
ΔV0 = 5.7049 − 5.66569 ⇒ ΔV0 = 0.0392 V
c. I = IZ + IL
V0 V − V0 V − VZ 0
IL = , I = PS , IZ = 0
RL R rZ
10 − V0 V0 − 5.599 V0
= +
0.50 0.010 2
10 5.599 ⎡ 1 1 1⎤
+ = V0 ⎢ + + ⎥
0.50 0.010 ⎣ 0.50 0.010 2 ⎦
20.0 + 559.9 = V0 (102.5)
V0 = 5.658 V

1.54
9 − 6.8
a. IZ = ⇒ I Z = 11 mA
0.2
PZ = (11)( 6.8 ) ⇒ PZ = 74.8 mW
12 − 6.8
IZ = ⇒ I Z = 26 mA
0.2
b.
26 − 11
%= × 100 ⇒ 136%
11
PZ = ( 26 )( 6.8 ) = 176.8 mW
176.8 − 74.8
%= × 100 ⇒ 136%
74.8

1.55
I Z rZ = ( 0.1)( 20 ) = 2 mV
VZ 0 = 6.8 − 0.002 = 6.798 V
a. RL = ∞
10 − 6.798
IZ = ⇒ I Z = 6.158 mA
0.5 + 0.02
V0 = VZ = VZ 0 + I Z rZ = 6.798 + ( 0.006158)( 20 )
V0 = 6.921 V
b. I = IZ + IL
10 − V0 V0 − 6.798 V0
= +
0.50 0.020 1
10 6.798 ⎡ 1 1 1⎤
+ = V0 ⎢ + + ⎥
0.30 0.020 ⎣ 0.50 0.020 1⎦
359.9 = V0 (53)
V0 = 6.791 V
ΔV0 = 6.791 − 6.921
ΔV0 = −0.13 V

1.56
For VD = 0, I SC = 0.1 A
⎛ 0.2 ⎞
For ID = 0 VD = VT ln ⎜ −14
+ 1⎟
⎝ 5 × 10 ⎠
VD = VDC = 0.754 V

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