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Iete de 71

This document contains a practice exam for the subject of Power Electronics. It has 9 total questions. Question 1 is multiple choice with 10 parts worth 2 marks each. Questions 2-8 are long-form questions worth 16 marks each, and students must answer 5 of these 8 questions. Question 9 has two parts worth 8 marks each. The exam covers topics like power electronic converters, characteristics of devices like diodes and thyristors, choppers, inverters, rectifiers, and converters. Students are provided 3 hours to complete the exam.
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0% found this document useful (0 votes)
57 views3 pages

Iete de 71

This document contains a practice exam for the subject of Power Electronics. It has 9 total questions. Question 1 is multiple choice with 10 parts worth 2 marks each. Questions 2-8 are long-form questions worth 16 marks each, and students must answer 5 of these 8 questions. Question 9 has two parts worth 8 marks each. The exam covers topics like power electronic converters, characteristics of devices like diodes and thyristors, choppers, inverters, rectifiers, and converters. Students are provided 3 hours to complete the exam.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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ROLL NO.

___________________

DipIETE – ET (NEW SCHEME) - Code: DE71

Subject: POWER ELECTRONICS


Time: 3 Hours Max. Marks: 100
DECEMBER 2011
NOTE: There are 9 Questions in all.
• Please write your Roll No. at the space provided on each page immediately after
receiving the Question Paper.
• Question 1 is compulsory and carries 20 marks. Answer to Q.1 must be written in
the space provided for it in the answer book supplied and nowhere else.
• The answer sheet for the Q.1 will be collected by the invigilator after 45 Minutes of
the commencement of the examination.
• Out of the remaining EIGHT Questions answer any FIVE Questions. Each
question carries 16 marks.
• Any required data not explicitly given, may be suitably assumed and stated.
Q.1 Choose the correct or the best alternative in the following: (2 × 10)
a. An IGBT has three terminals called _________

(A) collector, emitter and base. (B) drain, source and base.
(C) drain, source and gate. (D) collector, emitter and gate.

b. Power-electronic equipment has very high efficiency, because _________

(A) The devices always operate in action region.


(B) The devices never operate in action region.
(C) The devices transverse active region at high speed and stay at the two
states, on and off.
(D) Cooling is very efficient.

c. When a thyristor is forward biased, the number of blocked p-n junction is


_______

(A) 1 (B) 2
(C) 3 (D) 4

d. The function of snubber circuit connected across an SCR is to __________

(A) suppress dv/dt.


(B) increase dv/dt.
(C) decease dv/dt.
(D) keep transient overvoltage at a constant value.

e. A single-phase half-wave controller rectifier has 400sin314t as the input


voltage and R as the load. For a firing angle of 600, the average output voltage
is _______

(A) 400/ ∏. (B) 300/ ∏.


(C) 240/ ∏. (D) 200/ ∏.
DE71 / DEC. – 2011 1 DipIETE – ET (NEW SCHEME)
ROLL NO. ___________________

f. In a single-phase full converter, for conduction, each pair of SCRs conduct for
________

(A) ∏-α. (B) ∏.


(C) α. (D) ∏+α.

g. A freewheeling diode across inductive load will provide _____________

(A) quick turn-on. (B) slow turn-off.


(C) reduced utilization factor. (D) improved power factor.

h. Each diode of a 3-phase half-wave diode rectifier conducts for _________

(A) 60o (B) 120o


(C) 180o (D) 90o

i. Each diode of a 3-phase, 6-pulse bridge diode rectifier conducts for


___________

(A) 60o (B) 120o


(C) 180o (D) 90o

j. The output of a single-phase full wave rectifier contains ___________

(A) DC plus even harmonics.


(B) DC plus odd harmonics.
(C) DC plus both odd and even harmonics.
(D) DC and no harmonics.

Answer any FIVE Questions out of EIGHT Questions.


Each question carries 16 marks.

Q.2 a. Discuss various types of power electronic converters. (8)

b. Draw and briefly explain the VI characteristics of power diode. (8)

Q.3 a. Draw and explain the transfer and output characteristics of Power Metal-Oxide
Semiconductor Field-effect transistor. (8)

b. Give a comparison between IGBT with MOSFET. (8)

Q.4 a. Sketch the I-V characteristics of a thyristor .Label various voltages, currents
and the operating modes on this sketch. (8)

b. List different thyristor turn on methods and explain gate triggering method. (8)

DE71 / DEC. – 2011 2 DipIETE – ET (NEW SCHEME)


ROLL NO. ___________________

Q.5 a. Explain the principle of chopper operation, with the help of a neat sketch. (8)

b. What are the different types of chopper configurations? Briefly discuss second
quadrant or type B chopper. (8)

Q.6 a. Draw the circuit diagram of single phase half bridge inverter and briefly
explain its working. (8)

b. Explain the various methods of voltage control with pulse width modulations.
(8)

Q.7 a. With the help of waveforms and circuit diagram, briefly explain Half-wave
controlled rectifier with an inductive load and an FWD. (8)

b. A three-phase half-wave controlled rectifier is connected to a 220 V source. If


the delay angle is 45o and the load resistance R = 10Ω find
(i) The average SCR current
(ii) The SCR RMS current
(iii) The average power dissipation in the SCR, if the SCR has a forward
voltage drop of 1.0V.
(iv) The maximum reverse voltage rating. (2 × 4 = 8)

Q.8 a. A single phase rectifier for 10 KW rating is required and thyristors of current
rating 50 A are to be used. Find the rated voltage of thyristor using a safety
factor of 2 if the rectifier is: (8)
(i) Full wave using centre tapped transformer,
(ii) Full wave bridge rectifier. Assume R-L load

b. With the help of the circuit diagram, briefly explain dual converters. (8)

Q.9 a. What are solid state relays? Explain how is the electrical isolation is obtained
in these relays? (8)

b. Describe the operating principle of single phase to single phase step up cyclo
converter with the help of mid-point configuration generation. (8)

DE71 / DEC. – 2011 3 DipIETE – ET (NEW SCHEME)

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