MJE2955T, 3055T

Complementary Power Transistors

Complementary Silicon Power Transistors are designed for use in general-purpose
amplifier and switching applications.

Features:
• Power dissipation-PD = 75W at TC = 25°C.
• DC current gain hFE = 20 (Minimum) at IC = 4.0A.
• VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA.

PNP NPN
Dimensions Minimum Maximum
MJE2955T MJE3055T
A 14.68 15.31
10 Ampere
B 9.78 10.42
Complemetary Silicon
C 5.01 6.52
Power Transistors
D 13.06 14.62 60 Volts
E 3.57 4.07 75 Watts
F 2.42 3.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
Pin 1. Base
2. Collector K 2.20 2.97 TO-220
3. Emitter L 0.33 0.55
4. Collector (Case). M 2.48 2.98
O 3.70 3.90
Dimensions : Millimetres

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 MJE2955T, 3055T
Complementary Power Transistors
Maximum Ratings

Parameter Symbol Rating Unit

Collector-Emitter Voltage VCEO 60

Collector-Base Voltage VCBO 70 V

Emitter-Base Voltage VEBO 5.0

Collector Current-Continuous IC 10
A

Base Current IB 6.0

Total Power Dissipation at TC = 25°C 75 W

PD
Derate above 25°C 0.6 W/°C

Operating and Storage Junction Temperature Range TJ, TSTG -55 to +150 °C

Thermal Characteristic
Characteristic Symbol Maximum Unit

Thermal Resistance Junction to Case Rθjc 1.67 °C/W

Figure - 1 Power Derating

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Complementary Power Transistors
Electrical Characteristics (TC = 25°C unless otherwise noted)

Parameter Symbol Minimum Maximum Unit

Off Characteristics

Collector-Emitter Sustaining Voltage (1)

(IC = 200mA, IB = 0)
VCEO(sus) 60 - V

Collector Cut off Current

(VCE = 30V, IB = 0)
ICEO - 0.7

Collector Cut off Current

(VCE = 70V, VBE(off) = 1.5V) ICEX - 1.0
(VCE = 70V, VBE(off) = 1.5V, TC = 150°C) 5.0
mA

Collector Cut off Current

(VCB = 70V, IE = 0) ICBO - 1.0
(VCB = 70V, IE = 0, TC = 150°C) 10

Emitter Cut off Current

(VEB = 5.0V, IC = 0)
IEBO - 5.0

On Characteristics (1)

DC Current Gain
(IC = 4.0A, VCE = 4.0V) hFE 20 100
-
(IC = 10A, VCE = 4.0V) 5.0

Collector-Emitter Saturation Voltage

1.1
(IC = 4.0A, IB = 0.4A) VCE(sat) - 8.0
(IC = 10A, IB = 3.3A)
V
Base-Emitter On Voltage
(IC = 4.0A, VCE = 4.0V)
VBE(on) - 1.8

Dynamic Characteristics

Current Gain-Bandwidth Product (2)

(IC = 500mA, VCE = 10V, f = 500KHz)
fT 2.0 - MHz

(1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%.

(2) fT = hfe • ftest.

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MJE2955T, 3055T
Complementary Power Transistors
Figure - 2 “ON” Voltage
MJE2955T MJE3055T

Figure - 3 Active-Region Safe Operating Area

There are two limitations on the power handling ability of a
transistor: average junction temperature and second
breakdown safe operating area curves indicate IC-VCE limits of
the transistor that must be observed for reliable operation i.e.,
the transistor must not be subjected to greater dissipation than
the curves indicate.
The data of Figure - 3 is based on TJ(PK) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(PK) ≤150°C.
At high case temperatures, thermal limitation will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.

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 MJE2955T, 3055T
Complementary Power Transistors
Figure - 4 DC Current Gain

Specifications
IC(av) VCEO hFE Ptot
maximum maximum minimum at 25°C Type Part Number
(A) (V) at IC = 4A (W)

NPN MJE3055T
10 60 20 75
PNP MJE2955T

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 MJE2955T, 3055T
Complementary Power Transistors
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