Z ibo Seno Electronic Engineering Co., Ltd.

ER101 – ER108
1.0A SUPERFAST RECTIFIER
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability A B A
! High Reliability
! High Surge Current Capability

Mechanical Data C
! Case: Molded Plastic D
! Terminals: Plated Leads Solderable per
DO-41
MIL-STD-202, Method 208
Dim Min Max
! Polarity: Cathode Band
A 25.4 —
! Weight: 0.34 grams (approx.)
B 4.06 5.21
! Mounting Position: Any
C 0.71 0.864
! Marking: Type Number
D 2.00 2.72
! Lead Free: For RoHS / Lead Free Version
All Dimensions in mm

Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

Characteristic Symbol ER101 ER102 ER103 ER104 ER105 ER106 ER107 ER108 Unit

Peak Repetitive Reverse Voltage VRRM

Working Peak Reverse Voltage VRWM 50 100 150 200 300 400 500 600 V
DC Blocking Voltage VR

RMS Reverse Voltage VR(RMS) 35 70 105 140 210 280 350 420 V

Average Rectified Output Current

IO 1.0 A
(Note 1) @TA = 55°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on IFSM 30 A
rated load (JEDEC Method)

Forward Voltage @IF = 1.0A VFM 0.95 1.30 1.70 V

Peak Reverse Current @TA = 25°C 5.0

IRM µA
At Rated DC Blocking Voltage @TA = 100°C 100

Reverse Recovery Time (Note 2) trr 35 nS

Typical Junction Capacitance (Note 3) Cj 20 10 pF

Operating Temperature Range Tj -65 to +150 °C

Storage Temperature Range TSTG -65 to +150 °C

*Glass passivated forms are available upon request

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

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 Z ibo Seno Electronic Engineering Co., Ltd.

ER101 – ER108
1.0
I(AV), AVERAGE FWD RECTIFIED CURRENT (A)

10

IF, INSTANTANEOUS FORWARD CURRENT (A)

0.8 ER101 - ER104

ER105 - ER106
2.0
0.6

0.4
ER107 - ER108
1.0

0.2

Single phase half-wave

60 Hz resistive or inductive load Tj = 25°C
Pulse width = 300µs
0 0.01
25 50 75 100 125 150 175 200 0.6 0.8 1.0 1.2 1.4
TA, AMBIENT TEMPERATURE (°C) VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Forward Derating Curve Fig. 2 Typical Forward Characteristics
30 100
IFSM, PEAK FORWARD SURGE CURRENT (A)

Tj = 25°C
Pulse Width 8.3ms
f = 1MHz
Single Half-Sine-Wave
(JEDEC Method)
Cj, CAPACITANCE (pF)

20

10

10

0 1
1 10 100 1 10 100
NUMBER OF CYCLES AT 60 Hz VR, REVERSE VOLTAGE (V)
Fig. 3 Peak Forward Surge Current Fig. 4 Typical Junction Capacitance
trr
+0.5A
50Ω NI (Non-inductive) 10Ω NI

Device
Under (-)
Test 0A
(+)
50V DC Pulse
Approx Generator -0.25A
(-) (Note 2)

1.0Ω (+)
Oscilloscope
NI (Note 1)

Notes: -1.0A
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω. Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit

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