MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>

PS21963-4S
TRANSFER-MOLD TYPE
INSULATED TYPE

PS21963-4S
INTEGRATED POWER FUNCTIONS
600V/10A low-loss 5th generation IGBT inverter bridge for
three phase DC-to-AC power conversion.
Open emitter type.

INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS

• For upper-leg IGBTS :Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection.
• For lower-leg IGBTS : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC).
• Fault signaling : Corresponding to an SC fault (Lower-leg IGBT) or a UV fault (Lower-side supply).
• Input interface : 3V, 5V line (High Active).
• UL Approved : Yellow Card No. E80276

APPLICATION
AC100V~200V inverter drive for small power motor control.

Fig. 1 PACKAGE OUTLINES Dimensions in mm

38 ±0.5
A B 3.5 TERMINAL CODE
20×1.778(=35.56 )
0.28 35 ±0.3 1.5 ±0.05 1. (VNC)
0.4

1.778 ±0.2 16-0.5 2. VUFB

3. VVFB
(1)

17 1 4. VWFB
5. UP
6. VP
7. WP
14.4 ±0.5

8. VP1
9. VNC *
(3.5)

(3.3)

10. UN
11. VN
33.7 ±0.5
29.2 ±0.5
24 ±0.5

12. WN
13. VN1
.6
2-
R1
QR Type name 14. FO
15. CIN
18.9 ±0.5
14.4 ±0.5

16. VNC *
12

Lot No. 0.8

Code 17. NC
3 MIN HEAT SINK SIDE 18. NW
19. NV
20. NU
18 25 21. W
22. V
23. U
0.28 24. P
2.54 ±0.2 8-0.6 25. NC
0.4

4-C1.2
14×2.54(=35.56) 2.5 MIN

0.5 0.5
0.5 0.5 (2.656)
1.5m
in
(0°~5°)
9.5 ±0.5

(1.2)

(1.2)

(2.756)
5.5 ±0.5

HEAT SINK SIDE

DETAIL A DETAIL B

*) Two VNC terminals (9 & 16 pin) are connected inside DIP-IPM, please connect either one to the 15V power supply GND outside and
leave another one open.

Mar. 2007
 MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>

PS21963-4S
TRANSFER-MOLD TYPE
INSULATED TYPE

MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)

INVERTER PART
Symbol Parameter Condition Ratings Unit
VCC Supply voltage Applied between P-NU, NV, NW 450 V
VCC(surge) Supply voltage (surge) Applied between P-NU, NV, NW 500 V
VCES Collector-emitter voltage 600 V
±IC Each IGBT collector current TC = 25°C 10 A
±ICP Each IGBT collector current (peak) TC = 25°C, less than 1ms 20 A
PC Collector dissipation TC = 25°C, per 1 chip 27.0 W
Tj Junction temperature (Note 1) –20~+125 °C
Note 1 : The maximum junction temperature rating of the power chips integrated within the DIP-IPM is 150°C (@ TC ≤ 100°C). However, to
ensure safe operation of the DIP-IPM, the average junction temperature should be limited to Tj(ave) ≤ 125°C (@ TC ≤ 100°C).

CONTROL (PROTECTION) PART

Symbol Parameter Condition Ratings Unit
VD Control supply voltage Applied between VP1-VNC, VN1-VNC 20 V
VDB Control supply voltage Applied between VUFB-U, VVFB-V, VWFB-W 20 V
Applied between UP, VP, WP, UN, VN,
VIN Input voltage –0.5~VD+0.5 V
WN-VNC
VFO Fault output supply voltage Applied between FO-VNC –0.5~VD+0.5 V
IFO Fault output current Sink current at FO terminal 1 mA
VSC Current sensing input voltage Applied between CIN-VNC –0.5~VD+0.5 V

TOTAL SYSTEM
Symbol Parameter Condition Ratings Unit
VD = 13.5~16.5V, Inverter part
VCC(PROT) Self protection supply voltage limit 400 V
(short circuit protection capability) Tj = 125°C, non-repetitive, less than 2µs
TC Module case operation temperature (Note 2) –20~+100 °C
Tstg Storage temperature –40~+125 °C
60Hz, Sinusoidal, 1 minute,
Viso Isolation voltage 1500 Vrms
Between pins and heat-sink plate

Note 2: TC measurement point

Control terminals DIP-IPM

11.6mm
3mm

IGBT chip position

TC point
FWD chip position
Heat sink side

Power terminals

Mar. 2007

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 MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>

PS21963-4S
TRANSFER-MOLD TYPE
INSULATED TYPE

THERMAL RESISTANCE
Limits
Symbol Parameter Condition Unit
Min. Typ. Max.
Rth(j-c)Q Junction to case thermal Inverter IGBT part (per 1/6 module) — — 3.7 °C/W
Rth(j-c)F resistance (Note 3) Inverter FWD part (per 1/6 module) — — 4.5 °C/W
Note 3 : Grease with good thermal conductivity should be applied evenly with about +100µm~+200µm on the contacting surface of DIP-IPM
and heat-sink.
The contacting thermal resistance between DIP-IPM case and heat sink (Rth(c-f)) is determined by the thickness and the thermal
conductivity of the applied grease. For reference, Rth(c-f) (per 1/6 module) is about 0.3°C/W when the grease thickness is 20µm and
the thermal conductivity is 1.0W/m·k.

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)

INVERTER PART
Limits
Symbol Parameter Condition Unit
Min. Typ. Max.
Collector-emitter saturation VD = VDB = 15V IC = 10A, Tj = 25°C — 1.70 2.20
VCE(sat) V
voltage VIN = 5V IC = 10A, Tj = 125°C — 1.80 2.30
VEC FWD forward voltage Tj = 25°C, –IC = 10A, VIN = 0V — 1.70 2.20 V
ton 0.60 1.10 1.70 µs
trr VCC = 300V, VD = VDB = 15V — 0.30 — µs
tc(on) Switching times IC = 10A, Tj = 125°C, VIN = 0 ↔ 5V — 0.40 0.60 µs
toff Inductive load (upper-lower arm) — 1.50 2.10 µs
tc(off) — 0.50 0.80 µs
Collector-emitter cut-off Tj = 25°C — — 1
ICES VCE = VCES mA
current Tj = 125°C — — 10

CONTROL (PROTECTION) PART

Limits
Symbol Parameter Condition Unit
Min. Typ. Max.
VD = VDB = 15V Total of VP1-VNC, VN1-VNC — — 2.80
VIN = 5V VUFB-U, VVFB-V, VWFB-W — — 0.55
ID Circuit current mA
VD = VDB = 15V Total of VP1-VNC, VN1-VNC — — 2.80
VIN = 0V VUFB-U, VVFB-V, VWFB-W — — 0.55
VFOH VSC = 0V, FO terminal pull-up to 5V by 10kΩ 4.9 — — V
Fault output voltage
VFOL VSC = 1V, IFO = 1mA — — 0.95 V
VSC(ref) Short circuit trip level Tj = 25°C, VD = 15V (Note 4) 0.43 0.48 0.53 V
IIN Input current VIN = 5V 0.70 1.00 1.50 mA
UVDBt Trip level 10.0 — 12.0 V
UVDBr Control supply under-voltage Reset level 10.5 — 12.5 V
protection Tj ≤ 125°C
UVDt Trip level 10.3 — 12.5 V
UVDr Reset level 10.8 — 13.0 V
tFO Fault output pulse width (Note 5) 20 — — µs
Vth(on) ON threshold voltage — 2.1 2.6 V
Vth(off) OFF threshold voltage 0.8 1.3 — V
Applied between UP, VP, WP, UN, VN, WN-VNC
ON/OFF threshold hysteresis
Vth(hys) 0.35 0.65 — V
voltage
Note 4 : Short circuit protection is functioning only for the lower-arms. Please select the external shunt resistance such that the SC trip-level is
less than 1.7 times of the current rating.
5 : Fault signal is asserted corresponding to a short circuit or lower side control supply under-voltage failure.

Mar. 2007

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 MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>

PS21963-4S
TRANSFER-MOLD TYPE
INSULATED TYPE

MECHANICAL CHARACTERISTICS AND RATINGS

Limits
Parameter Condition Unit
Min. Typ. Max.
Mounting screw : M3
Mounting torque Recommended : 0.69 N·m 0.59 — 0.78 N·m
(Note 6)
Weight — 10 — g
Heat-sink flatness (Note 7) –50 — 100 µm
Note 6 : Plain washers (ISO 7089~7094) are recommended.

Note 7: Flatness measurement position

Measurement position
+ – 4.6mm

DIP-IPM

Heat sink side

–
+
Heat sink side

RECOMMENDED OPERATION CONDITIONS

Limits
Symbol Parameter Condition Unit
Min. Typ. Max.
VCC Supply voltage Applied between P-NU, NV, NW 0 300 400 V
VD Control supply voltage Applied between VP1-VNC, VN1-VNC 13.5 15.0 16.5 V
VDB Control supply voltage Applied between VUFB-U, VVFB-V, VWFB-W 13.0 15.0 18.5 V
∆VD, ∆VDB Control supply variation –1 — 1 V/µs
tdead Arm shoot-through blocking time For each input signal, TC ≤ 100°C 1.5 — — µs
fPWM PWM input frequency TC ≤ 100°C, Tj ≤ 125°C — — 20 kHz
VCC = 300V, VD = VDB = 15V, fPWM = 5kHz — — 5.0
IO Allowable r.m.s. current P.F = 0.8, sinusoidal PWM, Arms
Tj ≤ 125°C, TC ≤ 100°C (Note 8) fPWM = 15kHz — — 3.0
PWIN(on) Allowable minimum input 0.5 — —
µs
PWIN(off) pulse width (Note 9) 0.5 — —
VNC VNC variation Between VNC-NU, NV, NW (including surge) –5.0 — 5.0 V
Note 8 : The allowable r.m.s. current value depends on the actual application conditions.
9 : IPM might not make response if the input signal pulse width is less than the recommended minimum value.

Mar. 2007

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 MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>

PS21963-4S
TRANSFER-MOLD TYPE
INSULATED TYPE

Fig. 2 THE DIP-IPM INTERNAL CIRCUIT

VUFB DIP-IPM
HVIC P

VP1 VCC VUB IGBT1 Di1

UP UP UOUT

VNC COM VUS U

VVFB VVB IGBT2 Di2

VP VP VOUT

VVS V

VWFB VWB IGBT3 Di3

WP WP WOUT

VWS W

IGBT4 Di4
LVIC
UOUT

VN1 VCC NU

IGBT5 Di5

VOUT

UN UN
NV
VN VN IGBT6 Di6

WN WN
WOUT

Fo Fo CIN
NW
VNO
VNC GND

CIN

Mar. 2007

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 MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>

PS21963-4S
TRANSFER-MOLD TYPE
INSULATED TYPE

Fig. 3 TIMING CHART OF THE DIP-IPM PROTECTIVE FUNCTIONS

[A] Short-Circuit Protection (Lower-side only with the external shunt resistor and CR filter)
a1. Normal operation : IGBT ON and carrying current.
a2. Short circuit detection (SC trigger).
a3. IGBT gate hard interruption.
a4. IGBT turns OFF.
a5. FO outputs (tFO(min) = 20µs).
a6. Input “L” : IGBT OFF.
a7. Input “H” : IGBT ON.
a8. IGBT OFF in spite of input “H”.

Lower-side control a6 a7
input

Protection circuit state SET RESET

Internal IGBT gate

a3
a2

SC a4
a1
Output current Ic a8
SC reference voltage
Sense voltage of the
shunt resistor

CR circuit time
constant DELAY
Error output Fo a5

[B] Under-Voltage Protection (Lower-side, UVD)

b1. Control supply voltage rising : After the voltage level reaches UVDr, the circuits start to operate when next input is applied.
b2. Normal operation : IGBT ON and carrying current.
b3. Under voltage trip (UVDt).
b4. IGBT OFF in spite of control input condition.
b5. FO outputs (tFO ≥ 20µs and FO outputs continuously during UV period).
b6. Under voltage reset (UVDr).
b7. Normal operation : IGBT ON and carrying current.

Control input

Protection circuit state RESET SET

RESET

UVDr
Control supply voltage VD b1 UVDt b6
b3

b4
b2 b7

Output current Ic

Error output Fo
b5

Mar. 2007

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 MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>

PS21963-4S
TRANSFER-MOLD TYPE
INSULATED TYPE

[C] Under-Voltage Protection (Upper-side, UVDB)

c1. Control supply voltage rising : After the voltage level reaches UVDBr, the circuits start to operate when next input is applied.
c2. Normal operation : IGBT ON and carrying current.
c3. Under voltage trip (UVDBt).
c4. IGBT OFF in spite of control input signal level, but there is no FO signal outputs.
c5. Under voltage reset (UVDBr).
c6. Normal operation : IGBT ON and carrying current.

Control input

Protection circuit state RESET SET RESET

UVDBr
Control supply voltage VDB c1 UVDBt c5
c3

c2 c4 c6
Output current Ic

High-level (no fault output)

Error output Fo

Fig. 4 RECOMMENDED MCU I/O INTERFACE CIRCUIT

5V line

10kΩ DIP-IPM

UP,VP,WP,UN,VN,WN

MCU
3.3kΩ (min)
Fo

VNC(Logic)

Note : The setting of RC coupling at each input (parts shown dotted) depends on the PWM control scheme and the
wiring impedance of the printed circuit board.
The DIP-IPM input section integrates a 3.3kΩ (min) pull-down resistor. Therefore, when using an external
filtering resistor, pay attention to the turn-on threshold voltage.

Fig. 5 WIRING CONNECTION OF SHUNT RESISTOR

DIP-IPM Each wiring inductance should be less than 10nH.

Equivalent to the inductance of a copper
pattern in dimension of width=3mm,
thickness=100µm, length=17mm

VNC
NU
NV
NW
Shunt resistors
Please make the GND wiring connection
of shunt resistor to the VNC terminal
as close as possible.

Mar. 2007

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 MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>

PS21963-4S
TRANSFER-MOLD TYPE
INSULATED TYPE

Fig. 6 AN EXAMPLE OF TYPICAL DIP-IPM APPLICATION CIRCUIT

C1: Electrolytic capacitor with good temperature characteristics C2,C3: 0.22~2µF R-category ceramic capacitor for noise filtering

C2 C1 C2 C1 C2 C1
Bootstrap negative electrodes
should be connected to U, V,
W terminals directly and
separated from the main output
wires.

VUFB VVFB VWFB DIP-IPM

P
HVIC
VP1 VUB
VCC
C3
UP
UP UOUT

U
VUS

VVB
VP
VP VOUT

V
VVS M

VWB

WP
WP WOUT
VNC W
COM VWS
MCU

LVIC
UOUT
VN1 NU
VCC
5V line C3

VOUT
UN
UN NV
VN VN
WN
WN
WOUT
Fo
Fo CIN NW
VNO
VNC
GND Long wiring here might C
cause short-circuit.
CIN

Long wiring here might cause

Long GND wiring here might SC level fluctuation and
15V line
generate noise to input and malfunction.
cause IGBT malfunction. Shunt resistors
A
B R1 N1
+
C4
- Vref
B R1
+
C4
- Vref
B R1
OR Logic +
C4
- Vref
Comparator
External protection circuit

Note 1 : Input drive is High-Active type. There is a 3.3kΩ(min.) pull-down resistor integrated in the IC input circuit. To prevent malfunction, the wiring of each in-
put should be as short as possible. When using RC coupling circuit, make sure the input signal level meet the turn-on and turn-off threshold voltage.
2 : Thanks to HVIC inside the module, direct coupling to MCU without any opto-coupler or transformer isolation is possible.
3 : FO output is open drain type. It should be pulled up to the positive side of a 5V power supply by a resistor of about 10kΩ.
4 : To prevent erroneous protection, the wiring of A, B, C should be as short as possible.
5 : The time constant R1C4 of the protection circuit should be selected in the range of 1.5-2µs. SC interrupting time might vary with the
wiring pattern. Tight tolerance, temp-compensated type is recommended for R1, C4.
6 : All capacitors should be mounted as close to the terminals of the DIP-IPM as possible. (C1: good temperature, frequency character-
istic electrolytic type, and C2, C3: good temperature, frequency and DC bias characteristic ceramic type are recommended.)
7 : To prevent surge destruction, the wiring between the smoothing capacitor and the P, N1 terminals should be as short as possible.
Generally a 0.1-0.22µF snubber between the P-N1 terminals is recommended.
8 : Two VNC terminals (9 & 16 pin) are connected inside DIP-IPM, please connect either one to the 15V power supply GND outside and
leave another one open.
9 : It is recommended to insert a Zener diode (24V/1W) between each pair of control supply terminals to prevent surge destruction.
10 : If control GND is connected to power GND by broad pattern, it may cause malfunction by power GND fluctuation. It is recommended
to connect control GND and power GND at only a point.
11 : The reference voltage Vref of comparator should be set up the same rating of short circuit trip level (Vsc(ref): min.0.43V to max.0.53V).
12 : OR logic output high level should exceed the maximum short circuit trip level (Vsc(ref): max.0.53V).

Mar. 2007