Scribd
Upload
155 views3 pages

1673

This document provides product specifications for the SavantIC Semiconductor 2SD845 silicon NPN power transistor. Key details include: 1) It has a MT-200 package and is intended for power amplifier applications with a high breakdown voltage of 150V and transition frequency of 20MHz. 2) Absolute maximum ratings include a collector current of 12A, base current of 1.2A, and collector power dissipation of 120W. 3) Characteristics include a collector-emitter saturation voltage below 2.0V, base-emitter on voltage below 1.5V, DC current gain range of 55-160, and transition frequency of 20MHz.

Uploaded by

heribertosfa
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
155 views3 pages

1673

This document provides product specifications for the SavantIC Semiconductor 2SD845 silicon NPN power transistor. Key details include: 1) It has a MT-200 package and is intended for power amplifier applications with a high breakdown voltage of 150V and transition frequency of 20MHz. 2) Absolute maximum ratings include a collector current of 12A, base current of 1.2A, and collector power dissipation of 120W. 3) Characteristics include a collector-emitter saturation voltage below 2.0V, base-emitter on voltage below 1.5V, DC current gain range of 55-160, and transition frequency of 20MHz.

Uploaded by

heribertosfa
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 3

SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD845

DESCRIPTION
·With MT-200 package
·Complement to type 2SB755
·High transition frequency
·High breakdown voltage :VCEO=150V(min)

APPLICATIONS
·For power amplifier applications

PINNING(see Fig.2)

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (MT-200) and symbol
3 Emitter

Absolute maximum ratings (Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 150 V

VCEO Collector-emitter voltage Open base 150 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current 12 A

IB Base current 1.2 A

PC Collector power dissipation TC=25 120 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD845

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=0.1A; IB=0 150 V

V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 5 V

VCEsat Collector-emitter saturation voltage IC=5 A;IB=0.5 A 2.0 V

VBE Base-emitter on voltage IC=5A ; VCE=5V 1.5 V

ICBO Collector cut-off current VCB=150V; IE=0 -50 µA

IEBO Emitter cut-off current VEB=5V; IC=0 -50 µA

hFE DC current gain IC=1A ; VCE=5V 55 160

fT Transition frequency IC=1A ; VCE=10V 20 MHz

hFE classifications

R O

55-110 80-160

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD845

PACKAGE OUTLINE

Fig.2 Outline dimensions

You might also like

pFad - Phonifier reborn

Pfad - The Proxy pFad of © 2024 Garber Painting. All rights reserved.

Note: This service is not intended for secure transactions such as banking, social media, email, or purchasing. Use at your own risk. We assume no liability whatsoever for broken pages.


Alternative Proxies:

Alternative Proxy

pFad Proxy

pFad v3 Proxy

pFad v4 Proxy