Chapter 8

Ion Implantation
Hong Xiao, Ph. D.
hxiao89@hotmail.com
www2.austin.cc.tx.us/HongXiao/Book.htm

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 1

 Objectives
• List at least three commonly used dopants
• Identify three doped areas
• Describe the advantages of ion implantation
• Describe major components of an implanter
• Explain the channeling effect
• Relationship of ion range and ion energy
• Explain the post-implantation annealing
• Identify safety hazards
Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 2
 Ion Implantation

• Introduction
• Safety
• Hardware
• Processes
• Summary

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 3

 Wafer Process Flow
Materials IC Fab

Dielectric Test
Metalization CMP
deposition
Wafers

Thermal Etch Packaging

Implant
Processes PR strip PR strip
Masks

Photo- Final Test

lithography

Design

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 4

Introduction: Dope Semiconductor
• What is Semiconductor?
• Why semiconductor need to be doped?
• What is n-type dopant?
• What is p-type dopant?

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 5

 Introduction
• Dope semiconductor
• Two way to dope
– Diffusion
– Ion implantation
• Other application of ion implantation

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 6

 Dope Semiconductor: Diffusion
• Isotropic process
• Can’t independently control dopant profile
and dopant concentration
• Replaced by ion implantation after its
introduction in mid-1970s.

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 7

 Dope Semiconductor: Diffusion
• First used to dope semiconductor
• Performed in high temperature furnace
• Using silicon dioxide mask
• Still used for dopant drive-in
• R&D on ultra shallow junction formation.

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 8

 Dopant Oxide Deposition

Deposited Dopant Oxide

SiO2

Si Substrate

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 9

 Oxidation

SiO2

Si Substrate

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 10

 Drive-in

SiO2
Doped junction
Si Substrate

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 11

 Strip and Clean

SiO2
Doped junction
Si Substrate

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 12

Dope Semiconductor: Ion Implantation
• Used for atomic and nuclear research
• Early idea introduced in 1950’s
• Introduced to semiconductor manufacturing
in mid-1970s.

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 13

Dope Semiconductor: Ion Implantation
• Independently control dopant profile (ion
energy) and dopant concentration (ion
current times implantation time)
• Anisotropic dopant profile
• Easy to achieve high concentration dope of
heavy dopant atom such as phosphorus and
arsenic.

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 14

 Misalignment of the Gate

Gate Oxide
Metal Gate Metal Gate

p+ S/D n-Si p+ S/D

n-Si

Aligned Misaligned

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 15

 Ion Implantation, Phosphorus

SiO2 Poly Si P+

n+ n+

P-type Silicon

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 16

 Comparison of
Implantation and Diffusion
Doped region

SiO2 PR

Si Si

Junction depth
Diffusion Ion implantation

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 17

 Comparison of
Implantation and Diffusion
Diffusion Ion Implantation

High temperature, hard mask Low temperature, photoresist mask

Isotropic dopant profile Anisotropic dopant profile

Cannot independently control of the dopant Can independently control of the dopant
concentration and junction depth concentration and junction depth

Batch process Both Batch and single wafer process

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 18

 Ion Implantation Control
• Beam current and implantation time control
dopant concentration
• Ion energy controls junction depth
• Dopant profile is anisotropic

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 19

 Applications of Ion Implantation

Applications Doping Pre-amorphous Buried oxide Poly barrier

Ions n-type: P, As, Sb Si or Ge O N
p-type: B

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 20

 Other Applications
• Oxygen implantation for silicon-on-
insulator (SOI) device
• Pre-amorphous silicon implantation on
titanium film for better annealing
• Pre-amorphous germanium implantation on
silicon substrate for profile control
• …...

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 21

 Some Fact about Phosphorus
Name Phosphorus
Symbol P
Atomic number 15
Atomic weight 30.973762
Discoverer Hennig Brand
Discovered at Germany
Discovery date 1669
Origin of name From the Greek word "phosphoros" meaning
"bringer of light" (an ancient name for the
planet Venus)
Density of solid 1.823 g/cm3
Molar volume 17.02 cm3
Velocity of sound N/A
Electrical resistivity 10 µΩ cm
Refractivity 1.001212
Reflectivity N/A
Melting point 44.3 C
Boiling point 277 C
Thermal conductivity 0.236 W m-1 K-1
Coefficient of linear thermal expansion N/A
Applications N-type dopant in diffusion, ion implantation,
epitaxial grow and polysilicon deposition.
Dopant of CVD silicate glass (PSG and BPSG).22
Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm
Main sources P (red), PH3, POCl 3
 Some Fact about Arsenic
Name Arsenic
Symbol As
Atomic number 33
Atomic weight 74.9216
Discoverer Known since ancient times
Discovered at not known
Discovery date not known
Origin of name From the Greek word "arsenikon" meaning
"yellow orpiment"
Density of solid 5.727 g/cm3
Molar volume 12.95 cm 3
Velocity of sound N/A
Electrical resistivity 30.03 µΩ cm
Refractivity 1.001552
Reflectivity N/A
Melting point 614 C
Boiling point 817 C
Thermal conductivity 50.2 W m -1 K-1
Coefficient of linear thermal expansion N/A
Applications N-type dopant in diffusion, ion implantation,
epitaxial grow and polysilicon deposition.
Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 23
Main sources As, AsH3
 Some Fact about Boron
Name Boron
Symbol B
Atomic number 5
Atomic weight 10.811
Discoverer Sir Humphrey Davy, Joseph-Louis Gay-Lussac,

Discovered at England, France

Discovery date 1808
Origin of name From the Arabic word "buraq" and the Persian
word "burah"
Density of solid 2.460 g/cm3
Molar volume 4.39 cm3
Velocity of sound 16200 m/sec
Electrical resistivity > 10 12 µΩ cm
Refractivity N/A
Reflectivity N/A
Melting point 2076 C
Boiling point 3927 C
Thermal conductivity 27 W m-1 K-1
Coefficient of linear thermal expansion 6 10-6 K-1
Applications P-type dopant in diffusion, ion implantation,
epitaxial grow and polysilicon deposition.
Dopant of CVD silicate glass (BPSG)
Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 24
Main sources B, B2H6, BF3
 Stopping Mechanism
• Ions penetrate into substrate
• Collide with lattice atoms
• Gradually lose their energy and stop
• Two stop mechanisms

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 25

 Two Stopping Mechanism
• Nuclear stopping
– Collision with nuclei of the lattice atoms
– Scattered significantly
– Causes crystal structure damage.
• electronic stopping
– Collision with electrons of the lattice atoms
– Incident ion path is almost unchanged
– Energy transfer is very small
– Crystal structure damage is negligible
Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 26
 Stopping Mechanism
• The total stopping power
Stotal = Sn + Se
• Sn: nuclear stopping, Se: electronic stopping
• Low E, high A ion implantation: mainly
nuclear stopping
• High E, low A ion implantation, electronic
stopping mechanism is more important

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 27

 Stopping Mechanisms
Ion Random Collisions
(S=Sn+Se)

Channeling
(S≈Se)

Back Scattering (S≈Sn)

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 28

Stopping Power and Ion Velocity

I II III
Stopping Power

Nuclear
Stopping
Electronic
Stopping

Ion Velocity
Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 29
Ion Trajectory and Projected Range

Vacuum Substrate Collision

Ion Trajectory
Ion Beam

Projected Range

Distance to the Surface

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 30

 Ion Projection Range

ln (Concentration)

Projected
Range

Substrate Surface Depth from the Surface

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 31
 Projected Range in Silicon
1.000

Projected Range (µm)

P
B

0.100
As
Sb

0.010
10 100 1000
Implantation Energy (keV)
Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 32
 Barrier Thickness to Block
200 keV Ion Beam
1.20

1.00
Mask Thickness (micron)

0.80 B

0.60
P
0.40
As
0.20
Sb
0.00
Si SiO2 Si3N4 Al PR

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 33

Implantation Processes: Channeling
• If the incident angle is right, ion can travel long
distance without collision with lattice atoms
• It causes uncontrollable dopant profile

Lots of collisions

Very few collisions

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 34
 Channeling Effect
Lattice Atoms

Channeling Ion

Collisional Ion

Wafer
Surface
Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 35
 Post-collision Channeling
Collisional Channeling Collisional

Wafer
Surface

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 36

 Post-collision Channeling
Collisional Channeling Collisional
Dopant Concentration

Distance from surface

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 37

Implantation Processes: Channeling

• Ways to avoid channeling effect

– Tilt wafer, 7° is most commonly used
– Screen oxide
– Pre-amorphous implantation, Germanium
• Shadowing effect
– Ion blocked by structures
• Rotate wafer and post-implantation diffusion
Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 38
 Shadowing Effect
Ion Beam

Polysilicon

Doped Region
Substrate

Shadowed Region
Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 39
 Shadowing Effect

After Annealing and Diffusion

Polysilicon

Doped Region
Substrate

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 40

 Q&A
• Why don’t people use channeling effect to
create deep junction without high ion energy?
• Ion beam is not perfectly parallel. Many ions
will start to have a lot of nuclear collisions
with lattice atoms after they penetrating into
the substrate. Some ions can channel deep into
the substrate, while many others are stopped
as the normal Gaussian distribution.
Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 41
 Damage Process
• Implanted ions transfer energy to lattice atoms
– Atoms to break free
• Freed atoms collide with other lattice atoms
– Free more lattice atoms
– Damage continues until all freed atoms stop
• One energetic ion can cause thousands of
displacements of lattice atoms

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 42

 Lattice Damage With One Ion

Light Ion

Damaged Region

Heavy Ion

Single Crystal Silicon

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 43

 Implantation Processes: Damage
• Ion collides with lattice atoms and knock them
out of lattice grid
• Implant area on substrate becomes amorphous
structure

Before Implantation After Implantation

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 44
 Implantation Processes: Anneal

• Dopant atom must in single crystal structure

and bond with four silicon atoms to be activated
as donor (N-type) or acceptor (P-type)

• Thermal energy from high temperature helps

amorphous atoms to recover single crystal
structure.

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 45

 Thermal Annealing

Lattice Atomswww2.austin.cc.tx.us/HongXiao/Book.htmDopant Atom

Hong Xiao, Ph. D. 46
 Thermal Annealing

Lattice Atomswww2.austin.cc.tx.us/HongXiao/Book.htmDopant Atom

Hong Xiao, Ph. D. 47
 Thermal Annealing

Lattice Atomswww2.austin.cc.tx.us/HongXiao/Book.htmDopant Atom

Hong Xiao, Ph. D. 48
 Thermal Annealing

Lattice Atomswww2.austin.cc.tx.us/HongXiao/Book.htmDopant Atom

Hong Xiao, Ph. D. 49
 Thermal Annealing

Lattice Atomswww2.austin.cc.tx.us/HongXiao/Book.htmDopant Atom

Hong Xiao, Ph. D. 50
 Thermal Annealing

Lattice Atomswww2.austin.cc.tx.us/HongXiao/Book.htmDopant Atom

Hong Xiao, Ph. D. 51
 Thermal Annealing

Lattice Atomswww2.austin.cc.tx.us/HongXiao/Book.htmDopant Atom

Hong Xiao, Ph. D. 52
 Thermal Annealing

Lattice Atomswww2.austin.cc.tx.us/HongXiao/Book.htmDopant Atoms

Hong Xiao, Ph. D. 53
Implantation Processes: Annealing

Before Annealing After Annealing

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 54

 Rapid Thermal Annealing (RTA)

• At high temperature, annealing out pace

diffusion
• Rapid thermal process (RTP) is widely used
for post-implantation anneal
• RTA is fast (less than a minute), better
WTW uniformity, better thermal budget
control, and minimized the dopant diffusion
Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 55
 RTP and Furnace Annealing

Gate
Poly Si Poly Si
Gate
SiO2

Si Si
Source/Drain

RTP Annealing Furnace Annealing

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 56

 Question and Answer
• Why can’t the furnace temperature be
ramped-up and cooled-down as quickly as
RTP system ?
• A furnace has very large thermal capacity, it
needs very high heating power to ramp-up
temperature rapidly. It is very difficult to ramp
up temperature very fast without large
temperature oscillation due to the temperature
overshoot and undershoot .
Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 57
 Ion Implantation: Hardware
• Gas system
• Electrical system
• Vacuum system
• Ion beamline

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 58

 Ion Implanter

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 59

 Implantation Process
Gases and Vapors:
P, B, BF3, PH3, and AsH3

Next Step
Implanter

Select Ion: Select Ion Select Beam

B, P, As Energy Current
Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 60
 Ion Implanter
Electrical
Gas Cabin Analyzer
System
Magnet

Vacuum
Ion Beam
Pump
Source Line

Electrical Vacuum
System Pump
Plasma Flooding Wafers
System
End Analyzer
Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 61
 Ion Implantation: Gas System
• Special gas deliver system to handle
hazardous gases
• Special training needed to change gases
bottles
• Argon is used for purge and beam
calibration

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 62

Ion Implantation: Electrical System
• High voltage system
– Determine ion energy that controls junction depth
• High voltage system
– Determine ion energy that controls junction depth
• RF system
– Some ion sources use RF to generate ions

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 63

Ion Implantation: Vacuum System
• Need high vacuum to accelerate ions and
reduce collision
• MFP >> beamline length
• 10-5 to 10-7 Torr
• Turbo pump and Cryo pump

• Exhaust system
Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 64
Ion Implantation: Control System
• Ion energy, beam current, and ion species.
• Mechanical parts for loading and unloading
• Wafer movement to get uniform beam scan
• CPU board control boards
– Control boards collect data from the systems,
send it to CPU board to process,
– CPU sends instructions back to the systems
through the control board.
Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 65
 Ion Implantation: Beamline
• Ion source
• Extraction electrode
• Analyzer magnet
• Post acceleration
• Plasma flooding system
• End analyzer

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 66

 Ion Beam Line
Suppression Electrode Analyzer
Magnet

Vacuum
Ion Beam
Pump
Source Line

Extraction Post Acceleration

Electrode Electrode Vacuum
Plasma Flooding Pump
System Wafers
End Analyzer
Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 67
 Ion implanter: Ion Source
• Hot tungsten filament emits thermal electron
• Electrons collide with source gas molecules
to dissociate and ionize
• Ions are extracted out of source chamber and
accelerated to the beamline
• RF and microwave power can also be used to
ionize source gas

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 68

 Ion Source
Source Gas or Vapor
Arc Power Tungsten Anti-cathode
~ 120 V Filament
+
-
Filament
Power, 0-5V, Plasma
up to 200A
Magnetic Field Line Source
Magnet

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 69

 RF Ion Source
Dopant Gas

RF Coils
+ RF Plasma
-

Extraction
Electrode
Ion Beam
Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 70
 Microwave Ion Source

Microwave

Magnetic
Coils ECR
Plasma

Magnetic
Field Line
Extraction
Electrode
Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 71
 Ion Implantation: Extraction

• Extraction electrode accelerates ions up to

50 keV
• High energy is required for analyzer magnet
to select right ion species.

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 72

 Extraction Assembly
Suppression Electrode Extraction Electrode
Top View
Ion Source
Plasma

Ion Beam

+ –
Extraction Suppression Slit Extracting
Power, up Power, up to Ion Beam
to 60 kV 10 kV
– + Terminal Chassis

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 73

Ion Implantation: Analyzer Magnet
• Gyro radius of charge particle in magnetic field
relate with B-field and mass/charge ratio
• Used for isotope separation to get enriched U235
• Only ions with right mass/charge ratio can go
through the slit
• Purified the implanting ion beam

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 74

 Analyzer
Magnetic Field (Point Outward)

Ion Beam Larger m/q Ratio

Flight Tube

Smaller m/q Ratio

Right m/q Ratio

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 75

 Ions in BF3 Plasma
Ions Atomic or molecule weight
10B 10
11B 11
10BF 29
11BF 30
F2 38
10BF 48
2
11BF 49
2
Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 76
 Question and Answer
10B+is lighter and can penetrate deeper than 11B+,
why don’t use 10B+ in deep junction implantation?

• Only 20% of boron atoms are 10B

• 10B+ ion concentration is only 1/4 of 11B+
• 10B+ beam current is 1/4 of 11B+ beam current
• Quadruple implantation time, lower throughput
Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 77
Ion Implantation: Post Acceleration
• Increasing (sometimes decreasing) ion
energy for ion to reach the required junction
depth determined by the device
• Electrodes with high DC voltage
• Adjustable vertical vanes control beam
current

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 78

Ion Implantation: Plasma Flooding
System
• Ions cause wafer charging
• Wafer charging can cause non-uniform
doping and arcing defects
• Elections are “flooding” into ion beam and
neutralized the charge on the wafer
• Argon plasma generated by thermal
electrons emit from hot tungsten filament

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 79

 Post Acceleration
Suppression Electrode Acceleration Electrode

Ion Beam

– –
Suppression Post Accel.
Power, up to Power, up
10 kV + to 60 kV
Terminal Chassis
+
Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 80
 Ion Beam Current Control
Fixed Defining Aperture

Ion Beam

Adjustable Vertical Vanes

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 81
 Bending Ion Trajectory

Neutral Atom Trajectory

Bias Electrode Ion Trajectory

Wafer

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 82

 Charge Neutralization System
• Implanted ions charge wafer positively
• Cause wafer charging effect
• Expel positive ion, cause beam blowup and
result non-uniform dopant distribution
• Discharge arcing create defects on wafer
• Breakdown gate oxide, low yield
• Need eliminate or minimize charging effect
Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 83
 Charging Effect

Ions trajectory

Wafer ++++

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 84

 Charge Neutralization System
• Need to provide electrons to neutralize ions
• Plasma flooding system
• Electron gun
• Electron shower are used to

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 85

 Plasma Flooding System

DC Power Tungsten Ar
Ion
Filament Beam
+
−
Filament
Current Plasma

Electrons
Wafer
Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 86
 Electron Gun
Secondary Electron Target

Secondary
Electrons Electrons

Ion Beam

Electron
Gun Thermal
Filament
Wafer
Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 87
 Wafer Handling
• Ion beam diameter: ~25 mm (~1”),
• Wafer diameter: 200 mm (8”) or larger
• Needs to move beam or wafer, or both, to
scan ion beam across the whole wafer
– Spin wheel
– Spin disk
– Single wafer scan

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 88

 Spin Wheel
Wafers
Spin arm

Spin rate: to
2400 rpm Ion beam

Swing period: ~10 sec Implanted stripe

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 89
 Spin Disk
Ion Beam
Wafers

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 90

 Single Wafer Scanning System

Scanning
Ion Beam
Wafer
Movement
Ion Beam

Scanning Electrodes

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 91

 Ion Implantation: Beam Stop
• absorb the ion beam energy,
• ion beam detector
– beam current, beam energy, and beam shape
measurement
• Water cooled metal plate carries away the
heat and blocks the X-ray radiation

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 92

 Ion Implantation: End Analyzer
• Faraday charge detector
• Used to calibrate beam current, energy and
profile

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 93

 Beam Stop
Graphite
Top View

Ion Beam

Magnets

Faraday
Water Cooled Current
Base Plate Detectors

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 94

 Ion Implantation: The Process
• CMOS applications
• CMOS ion implantation requirements
• Implantation process evaluations

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 95

CMOS Implantation Requirements
Implant Step 0.35 µm, 64 Mb 0.25 µm, 256 Mb 0.18 µm, 1 Gb

N-well
Well P/600/2×1013 P/400/2×1013 P/300/1×1013
Anti-punch through P/100/5×1013 As/100/5×1012 As/50/2×1012
Threshold B/10/7×1012 B/5/3×1012 B/2/4×1012
Poly dope P/30/2×1015 B/20/2×1015 B/20/3×1015
Poly diffusion block - - N2/20/3×1015
Lightly doped drain (LDD) B/7/5×1013 B/5/1×1014 B/2/8×1013

Halo (45° implant) - - As/30/5×1013

Source/drain contact B/10/2×1015 B/7/2×1015 B/6/2×1015
P-well
Well B/225/3×1013 B/200/1×1013 B/175/1×1013
Anti-punch through B/30/2×1013 B/50/5×1012 B/45/5×1012
Threshold B/10/7×1012 B/5/3×1012 B/2/4×1012
Poly dope P/30/5×1015 P/20/2×1015 As/40/3×1015
Poly diffusion block - - N2/20/3×1015
Lightly doped drain (LDD) P/20/5×1013 P/12/5×1013 P/5/3×1013

Halo (45° implant) B/30/3×1012 B/20/3×1012 B/7/2×1013

Source/drain contact As/30/3×1015 As/20/3×1015 As/15/3×1015
Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 96
 Implantation Process: Well
Implantation
• High energy (to MeV), low current (1013/cm2)
P+

Photoresist
N-Well

P-Epi
P-Wafer

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 97

 Implantation Process: VT Adjust
Implantation
Low Energy , Low Current

B+
Photoresist
STI USG
P-Well N-Well
P-Epi
P-Wafer

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 98

Lightly Doped Drain (LDD) Implantation

• Low energy (10 keV), low current (1013/cm2)

P+

Photoresist

STI USG
P-Well N-Well
P-Epi
P-Wafer
Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 99
Implantation Process: S/D Implantation
• Low energy (20 keV), high current (>1015/cm2)

P+

Photoresist

STI n+ n+ USG
P-Well N-Well
P-Epi
P-Wafer

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 100

 Ion Implantation Processes

Ion Implantation Energy Current

Well High energy low current
Source/Drain Low energy high current
VT Adjust Low energy low current
LDD Low energy low current

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 101

 Process Issues
• Wafer charging
• Particle contamination
• Elemental contamination
• Process evaluation

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 102

 Wafer Charging
• Break down gate oxide
• Dielectric strength of SiO2: ~10 MV/cm
• 100 Å oxide breakdown voltage is 10 V
• Gate oxide: 30 to 35 Å for 0.18 µm device
• Require better charge neutralization

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 103

 Wafer Charging Monitoring
• Antenna capacitor changing test structure
• The ratio of polysilicon pad area and thin
oxide area is called antenna ratio
• Can be as high as 100,000:1
• The larger antenna ratio, the easier to
breakdown the thin gate oxide

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 104

 Antenna Ratio

Top View

Polysilicon
Side View Field Oxide Gate Oxide
Silicon Substrate

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 105

 Particle Contamination
• Large particles can block the ion beam
especially for the low energy processes,
• VT adjust, LDD and S/D implantations,
• Cause incomplete dopant junction.
• Harmful to yield

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 106

 Effect of Particle Contamination
Ion Beam
Dopant in PR
Particle

Photoresist

Screen Oxide
Partially Implanted Junctions

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 107

 Elemental Contamination
• Co-implantation other elements with intended dopant
• 94Mo++ and 11BF +, same mass/charge ratio (A/e = 49)
2
• Mass analyzer can’t separate these two
• 94Mo++ causes heavy metal contamination

• Ion source can’t use standard stainless steel

• Other materials such as graphite and tantalum are
normally used

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 108

 Process Evaluation
• Four-point probe
• Thermal wave
• Optical measurement system (OMS)

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 109

 Four-Point Probe
• Perform after anneal
• Measure sheet resistance
• Sheet resistant is a function of dopant
concentration and junction depth
• Commonly used to monitor doping process

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 110

 Four-Point Probe Measurement
I
V
P1 P2 P3 P4

S1 S2 S3

Dope Region

Substrate

For a typical four-point probe, S1 = S2 = S3 = 1mm,

If current is applied between P1 and P4, Rs = 4.53 V/I
If current is applied between P1 and P3, Rs = 5.75 V/I
Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 111
 Thermal Wave System
• Argon “pump” laser generates thermal pulses on
wafer surface
• He-Ne probe laser measures DC reflectivity (R)
and reflectivity modulation induced by the pump
laser (∆R) at the same spot
• Ratio ∆R/R is called thermal wave (TW) signal,
– TW signal ∆R/R related to the crystal damage
– crystal damage is a function of the implant dose

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 112

 Thermal Wave System

Pump
I ∆R Thermal Waver Laser
R Signal Detector

t I

t
Probe Laser

∆R/R: Thermal Wave Signal

Wafer
Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 113
 Thermal Wave System
• Performed immediately after the implant process
– Four-point probe needs anneal first
• Non-destructive, can measure production wafers
– Four-point probe is only good for test wafers
• Low sensitivity at low dosage
• Drift of the TW signal over time
– needs to be taken as soon as the implantation finished
• Don’t have very high measurement accuracy
– Laser heating relax crystal damage

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 114

Optical Measurement System (OMS)
• transparent wafer coated a with a thin layer of
copolymer, which contains energy sensitive dye
• During ion implantation, energetic ions collide with
dye molecules and break them down
• Makes the copolymer becomes more transparent
• The higher the dosage, the higher the transparency
• Photon count change before and after implantation
• Determine dosage of certain ion at certain energy
Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 115
Optical Measurement System (OME)
Quartz Halogen Lamp
600 nm Filter

Photo Detector

PDI Count PDI Count

Before Implantation After Implantation

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 116
 Ion Implantation: Safety
• One of most hazardous process tools in
semiconductor industry
• Chemical
• Electro-magnetic
• Mechanical

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 117

Ion Implantation: Chemical Safety
• Most dopant materials are highly toxic,
flammable and explosive.
• Poisonous and explosive: AsH3, PH3, B2H6
• Corrosive: BF3
• Toxic: P, B, As, Sb

• Common sense: get out first, let the trained

people to do the investigation.
Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 118
 Ion Implantation:
Electro-magnetic Safety
• High voltage: from facility 208 V to
acceleration electrode up to 50 kV.
• Ground strip, Work with buddy!
• Lock & tag

• Magnetic field: pacemaker, etc.

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 119

Ion Implantation: Radiation Safety
• High energy ions cause strong X-ray
radiation
• Normally well shield

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 120

 Ion Implantation:
Corrosive by-products
• BF3 as dopant gas
• Fluorine will react with hydrogen to from
HF
• Anything in the beamline could have HF
• Double glove needed while wet clean those
parts

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 121

Ion Implantation: Mechanical Safety
• Moving parts, doors, valves and robots
• Spin wheel
• Hot surface
• ……

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 122

 Technology Trends
• Ultra shallow junction (USJ)
• Silicon on insulator (SOI)
• Plasma immersion ion implantation (PIII)

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 123

 Ultra Shallow Junction (USJ)
• USJ (xj ≤ 0.05 µm) for sub-0.1 µm devices
– p-type junction, boron ion beam at extremely low
energy, as low as 0.2 keV
• The requirements for the USJ
– Shallow
– Low sheet resistance
– Low contact resistance
– Minimal impact on channel profile
– Compatible with polysilicon gate
Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 124
 Soft Error
• Electron-hole pairs generated by α-decay
• Electrons from substrate overwrite the
messages in memory capacitors
– Storage capacitors need large capacitance
– Limit further shrinking device feature size
• Silicon-on-insulator (SOI) complete isolate
device from bulk substrate

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 125

α-particle Induced Electron-hole Pairs

+ −
Electron-hole pair −
+
+ −
− +
+ −
− +
+ −
Silicon substrate
− +
α-particle

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 126

 CMOS on SOI Substrate

n+ source/drain p+ source/drain
Gate oxide

Polysilicon

p-Si STI n-Si USG

Buried oxide
Balk Si

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 127

 SOI Formation
• Implanted wafers
– Heavy oxygen ion implantation
– High temperature annealing
• Bonded wafers
– Two wafers
– Grow oxide on one wafer
– High temperature bond wafer bonding
– Polish one wafer until thousand Å away from SiO2
Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 128
 Oxygen Ion Implantation

Silicon with lattice damage

Oxygen rich silicon
Balk Si

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 129

 High Temperature Annealing

Single crystal silicon

Silicon dioxide
Balk Si

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 130

Plasma Immersion Ion Implantation
• Deep trench capacitor for DRAM
• Deeper and narrower
• Very difficult to heavily dope both sidewall
and bottom by ion implantation
• Plasma immersion ion implantation (PIII)
• An ion implantation process without precise
ion species and ion energy selection
Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 131
 Deep Trench Capacitor
Polysilicon

Dielectric
Layer
Heavily
doped Si

Silicon
Substrate

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 132

 ECR Plasma Immersion System
Microwave

Magnet
Coils
ECR
plasma
Magnetic
field line Wafer

Bias RF
E-chuck
Helium

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 133

 Summary of Ion Implantation
• Dope semiconductor
• Better doping method than diffusion
• Easy to control junction depth (by ion
energy) and dopant concentration ( by ion
current and implantation time).
• Anisotropic dopant profile.

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 134

 Summary of Ion Implantation
• Ion source
• Extraction
• Analyzer magnets
• Post acceleration
• Charge neutralization system
• Beam stop

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 135

 Summary of Ion Implantation

• Well High energy, low current

• Source/Drain Low energy, high current
• Vt Adjust Low energy, low current
• LDD Low energy, low current

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 136