PD-94810A

IRG4BC30UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT
Features
• UltraFast: Optimized for high operating C
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode VCES = 600V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than VCE(on) typ. = 1.95V
Generation 3 G
• IGBT co-packaged with HEXFREDTM ultrafast,
@VGE = 15V, IC = 12A
ultra-soft-recovery anti-parallel diodes for use in E
bridge configurations n-channel
• Industry standard TO-220AB package
• Lead-Free

Benefits
• Generation -4 IGBT's offer highest efficiencies
available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBTs . Minimized recovery characteristics require
less/no snubbing TO-220AB
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings

Parameter Max. Units

V CES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 23
IC @ TC = 100°C Continuous Collector Current 12
ICM Pulsed Collector Current  92 A
ILM Clamped Inductive Load Current ‚ 92
IF @ TC = 100°C Diode Continuous Forward Current 12
IFM Diode Maximum Forward Current 92
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 100
PD @ TC = 100°C Maximum Power Dissipation 42 W
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT ------ ------ 1.2
RθJC Junction-to-Case - Diode ------ ------ 2.5 °C/W
RθCS Case-to-Sink, flat, greased surface ------ 0.50 ------
RθJA Junction-to-Ambient, typical socket mount ----- ----- 80
Wt Weight ------ 2 (0.07) ------ g (oz)

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V(BR)CES Collector-to-Emitter Breakdown Voltageƒ 600 ---- ---- V VGE = 0V, IC = 250µA
∆V (BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---- 0.63 ---- V/°C VGE = 0V, IC = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage ---- 1.95 2.1 IC = 12A VGE = 15V
---- 2.52 ---- V IC = 23A See Fig. 2, 5
---- 2.09 ---- IC = 12A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 ---- 6.0 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---- -11 ---- mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance „ 3.1 8.6 ---- S VCE = 100V, IC = 12A
ICES Zero Gate Voltage Collector Current ---- ---- 250 µA VGE = 0V, VCE = 600V
---- ---- 2500 VGE = 0V, VCE = 600V, TJ = 150°C
V FM Diode Forward Voltage Drop ---- 1.4 1.7 V IC = 12A See Fig. 13
---- 1.3 1.6 IC = 12A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current ---- ---- ±100 n A VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Qg Total Gate Charge (turn-on) ---- 50 75 IC = 12A
Qge Gate - Emitter Charge (turn-on) ---- 8.1 12 nC VCC = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) ---- 18 27 VGE = 15V
td(on) Turn-On Delay Time ---- 40 ---- TJ = 25°C
tr Rise Time ---- 21 ---- ns IC = 12A, VCC = 480V
td(off) Turn-Off Delay Time ---- 91 140 VGE = 15V, RG = 23Ω
tf Fall Time ---- 80 130 Energy losses include "tail" and
Eon Turn-On Switching Loss ---- 0.38 ---- diode reverse recovery.
Eoff Turn-Off Switching Loss ---- 0.16 ---- mJ See Fig. 9, 10, 11, 18
Ets Total Switching Loss ---- 0.54 0.9
td(on) Turn-On Delay Time ---- 40 ---- TJ = 150°C, See Fig. 9, 10, 11, 18
tr Rise Time ---- 22 ---- ns IC = 12A, VCC = 480V
td(off) Turn-Off Delay Time ---- 120 ---- VGE = 15V, RG = 23Ω
tf Fall Time ---- 180 ---- Energy losses include "tail" and
Ets Total Switching Loss ---- 0.89 ---- mJ diode reverse recovery.
LE Internal Emitter Inductance ---- 7.5 ---- nH Measured 5mm from package
Cies Input Capacitance ---- 1100 ---- VGE = 0V
Coes Output Capacitance ---- 73 ---- pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance ---- 14 ---- ƒ = 1.0MHz
t rr Diode Reverse Recovery Time ---- 42 60 ns TJ = 25°C See Fig.
---- 80 120 TJ = 125°C 14 IF = 12A
Irr Diode Peak Reverse Recovery Current ---- 3.5 6.0 A TJ = 25°C See Fig.
---- 5.6 10 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge ---- 80 180 nC TJ = 25°C See Fig.
---- 220 600 TJ = 125°C 16 di/dt 200A/µs
di(rec)M/dt Diode Peak Rate of Fall of Recovery ---- 180 ---- A/µs TJ = 25°C See Fig.
During tb ---- 120 ---- TJ = 125°C 17

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Duty cycle: 50%

TJ = 125°C
T sink = 90°C
Gate drive as specified
12 Turn-on losses include
Load Current ( A )

effects of reverse recovery

Power Dissipation = 21W

60% of rated
8 voltage

0 A
0.1 1 10 100

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

100 100
IC , Collector-to-Emitter Current (A)
IC , Collector-to-Emitter Current (A)

TJ = 25°C

TJ = 150°C TJ = 150°C
10 10

TJ = 25°C

1 1

VGE = 15V V CC = 10V

20µs PULSE WIDTH A 0.1
5µs PULSE WIDTH A
0.1
0.1 1 10 5 6 7 8 9 10 11 12

VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

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3.0
V GE = 15V

VCE , Collector-to-Emitter Voltage (V)

Maximum DC Collector Current (A

25 IC = 24A
V GE = 15V 80µs PULSE WIDTH

20
2.5

15

IC = 12A

10 2.0

I C = 6.0A
5

1.5 A
0 A -60 -40 -20 0 20 40 60 80 100 120 140 160
25 50 75 100 125 150 TJ , Junction Temperature (°C)
TC , Case Temperature (°C)

Fig. 4 - Maximum Collector Current vs. Fig. 5 - Typical Collector-to-Emitter Voltage

Case Temperature vs. Junction Temperature

10
Thermal Response (Z thJC )

1
D = 0.50

0.20
PDM
0.10
0.1
0.05 t
1
0.02 t2
0.01 SINGLE PULSE
(THERMAL RESPONSE) Notes:
1. Duty factor D = t / t
1 2
2. Peak TJ = P DM x Z thJC + T C
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
t 1 , Rectangular Pulse Duration (sec)

Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case

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2000 20
V GE = 0V, f = 1MHz VCE = 400V
C ies = C ge + C gc , Cce SHORTED

VGE , Gate-to-Emitter Voltage (V)

I C = 12A
C res = C gc
1600 C oes = C ce + C gc 16
C, Capacitance (pF)

Cies

1200 12

800
Coes 8

400
Cres 4

0
A 0 A
1 10 100 0 10 20 30 40 50

VCE, Collector-to-Emitter Voltage (V) Qg , Total Gate Charge (nC)

Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.

Collector-to-Emitter Voltage Gate-to-Emitter Voltage

10
0.60 R G = 23Ω
V CC = 480V
V GE = 15V V GE = 15V
V CC = 480V
Total Switchig Losses (mJ)

T J = 25°C
Total Switchig Losses (mJ)

0.58 I C = 12A

I C = 24A

0.56

1 I C = 12A

0.54
I C = 6.0A

0.52

A 0.1 A
0.50
-60 -40 -20 0 20 40 60 80 100 120 140 160
0 10 20 30 40 50 60
TJ , Junction Temperature (°C)
R G, Gate Resistance ( Ω)

Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs.
Resistance Junction Temperature

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2.0 1000
R G = 23 Ω VGE
GE= 20V
T J = 150°C TJ = 125°C
V CC = 480V
Total Switchig Losses (mJ)

I C , Collector-to-Emitter Current (A)

1.6 V GE = 15V
100

1.2 SAFE OPERATING AREA

10

0.8

1
0.4

0.0 A 0.1
0 10 20 30 1 10 100 1000
IC , Collector-to-Emitter Current (A) VCE , Collector-to-Emitter Voltage (V)

Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA

Collector-to-Emitter Current

100
Instantaneous Forward Current - I F (A)

TJ = 150°C

10 TJ = 125°C

TJ = 25°C

1
0.4 0.8 1.2 1.6 2.0 2.4
Forward Voltage Drop - V FM (V)

Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

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 IRG4BC30UDPbF

160 100

VR = 200V VR = 200V
TJ = 125°C TJ = 125°C
TJ = 25°C TJ = 25°C

120

I F = 24A
I F = 24A

I IRRM - (A)
t rr - (ns)

I F = 12A
I F = 12A
80 10
I F = 6.0A
IF = 6.0A

40

0 1
100 1000 100 1000
di f /dt - (A/µs) di f /dt - (A/µs)

Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt

600 10000

VR = 200V VR = 200V
TJ = 125°C TJ = 125°C
TJ = 25°C TJ = 25°C
di(rec)M/dt - (A/µs)

400 1000
IF = 6.0A
Q RR - (nC)

I F = 24A
I F = 12A
I F = 12A
200 100

IF = 24A
IF = 6.0A

0 10
100 1000 100 1000
di f /dt - (A/µs) di f /dt - (A/µs)

Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt

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 IRG4BC30UDPbF

90% Vge
+Vge

Same type
device as Vce
D.U.T.

90% Ic
10% Vce
Ic Ic
430µF 5% Ic
80%
of Vce D.U.T.
td(off) tf

t1+5µS
Eoff =
∫t1
Vce ic dt

Fig. 18a - Test Circuit for Measurement of

ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

Eoff, td(off), tf

trr
GATE VOLTAGE D.U.T.
Ic
trr
Qrr =
∫ tx
id dt

10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
DUT VOLTAGE
Vce
AND CURRENT Vpk
Irr
10% Ic
Vcc Ipk
90% Ic
Ic
DIODE RECOVERY
WAVEFORMS
5% Vce
td(on) tr

∫
t2
Eon = Vce ie dt

∫
t4
t1 Erec = Vd id dt
t3
t1 t2 DIODE REVERSE
RECOVERY ENERGY

t3 t4

Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr Defining Erec, trr, Qrr, Irr

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Vg GATE SIGNAL
DEVICE UNDER TEST

CURRENT D.U.T.

VOLTAGE IN D.U.T.

CURRENT IN D1

t0 t1 t2

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

RL = VCC
ICM
L D.U.T.
1000V Vc*

50V
6000µF
480µF
100V
0 - VCC

Pulsed Collector Current

Test Circuit

Figure 19. Clamped Inductive Load Test Figure 20. Pulsed Collector Current
Circuit Test Circuit

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Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction tem-
perature (figure 20)
‚VCC=80%(VCES), VGE=20V, L=10µH, RG = 23Ω (figure 19)
ƒPulse width ≤ 80µs; duty factor ≤ 0.1%.
„Pulse width 5.0µs, single shot.

TO-220AB Package Outline (Dimensions are shown in millimeters (inches))

TO-220AB Part Marking Information

(;$03/( 7+,6,6$1,5)
/27&2'(
$66(0%/('21:: ,17(51$7,21$/ 3$57180%(5
,17+($66(0%/</,1(& 5(&7,),(5
/2*2
Note: "P" in assembly line
position indicates "Lead-Free" '$7(&2'(
$66(0%/< <($5 
/27&2'( :((.
/,1(&

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.02/2010
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