Boylestad: MCQ in Semiconductor Diodes

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July 27,
2019

(Last Updated On: December 2, 2019)

This is the Multiple Choice Questions in Semiconductor Diodes from the book Electronic
Devices and Circuit Theory 10th Edition by Robert L. Boylestad. If you are looking for a
reviewer in Electronics Engineering this will definitely help. I can assure you that this will be a
great help in reviewing the book in preparation for your Board Exam. Make sure to
familiarize each and every questions to increase the chance of passing the ECE Board Exam.

Online Questions and Answers Topic Outline

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 MCQ in Ideal Diode
MCQ in Semiconductor Materials
MCQ in Energy Levels
MCQ in Extrinsic Materials—n- and p-Type
MCQ in Semiconductor Diode
MCQ in Resistance Levels
MCQ in Diode Equivalent Circuits
MCQ in Diode Specification Sheets
MCQ in Transition and Diffusion Capacitance
MCQ in Reverse Recovery Time
MCQ in Semiconductor Diode Notation
MCQ in Diode Testing
MCQ in Zener Diodes
MCQ in Light-Emitting Diodes (LED)
MCQ in Diode Arrays—Integrated Circuits

Practice Exam Test Questions

1. How many terminals does a diode have?

A) 1

B) 2

C) 3

D) 4

View Answer:
Answer: Option B

Solution:

2. What is the resistor value of an ideal diode in the region of conduction?

A) 0

B) 5 k

C) Undefined

D) Infinity

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View Answer:
Answer: Option A

Solution:

3. What is the state of an ideal diode in the region of nonconduction?

A) An open circuit

B) A short circuit

C) Unpredictable

D) Undefined

View Answer:
Answer: Option A

Solution:

4. The diode _______.

A) is the simplest of semiconductor devices

B) has characteristics that closely match those of a simple switch

C) is a two-terminal device

D) All of the above

View Answer:
Answer: Option D

Solution:

5. The ideal diode is a(n) _______ circuit in the region of nonconduction.

A) open

B) short

View Answer:
Answer: Option A

Solution:

6. Which of the following is an atom composed of?

B) Protons

C) Neutrons

D) All of the above

View Answer:
Answer: Option D

Solution:

7. How many orbiting electrons does the germanium atom have?

A) 4

B) 14

C) 32

D) 41

View Answer:
Answer: Option C

Solution:

8. How many valence electrons does a silicon atom have?

A) 1

B) 2

C) 3

D) 4

View Answer:
Answer: Option D

Solution:

9. One eV is equal to _______ J.

A) 6.02 × 10^23

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B) 1.6 × 10^–19

C) 6.25 × 10^18

D) 1.66 × 10^–24

View Answer:
Answer: Option B

Solution:

10. Which of the following elements is most frequently used for doping pure Ge or Si?

A) Boron

B) Gallium

C) Indium

D) All of the above

View Answer:
Answer: Option D

Solution:

11. The diffused impurities with ________ valence electrons are called donor atoms.

A) 4

B) 3

C) 5

D) 0

View Answer:
Answer: Option C

Solution:

12. In what state is a silicon diode if the voltage drop across it is about 0.7 V?

A) No bias

B) Forward bias

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C) Reverse bias

D) Zener region

View Answer:
Answer: Option B

Solution:

13. What unit is used to represent the level of a diode forward current IF?

A) pA

B) nA

C) A

D) mA

View Answer:
Answer: Option D

Solution:

14. Which of the following ratings is true?

A) Si diodes have higher PIV and narrower temperature ranges than Ge diodes.

B) Si diodes have higher PIV and wider temperature ranges than Ge diodes.

C) Si diodes have lower PIV and narrower temperature ranges than Ge diodes.

D) Si diodes have lower PIV and wider temperature ranges than Ge diodes.

View Answer:
Answer: Option B

Solution:

15. It is not uncommon for a germanium diode with an Is in the order of 1–2 A at 25°C to
have leakage current of 0.1 mA at a temperature of 100°C.

A) True

B) False

View Answer:
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Answer: Option A

Solution:

16. Calculate static resistance R D of a diode having ID = 30 mA and V D = 0.75 V.

A) 25

B) 40

C) 0.04

D) 0.025

View Answer:
Answer: Option A

Solution:

17. Calculate ID if R D = 30 and V D = 0.84 V.

A) 28 mA

B) 0.028 mA

C) 2.8 A

D) 280 A

View Answer:
Answer: Option A

Solution:

18. Refer to Figure 1.27. Calculate the dynamic resistance RD of a diode having ID = 27.5 mA.

A) 0

B) 2

C) 5

D) 26

View Answer:
Answer: Option B

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Solution:

19. Determining rd to a high degree of accuracy from a characteristic curve is very accurate.

A) True

B) False

View Answer:
Answer: Option B

Solution:

20. The _________ diode model is employed most frequently in the analysis of electronic
systems.

A) ideal device

B) simplified

C) piecewise-linear

D) none of the above

View Answer:
Answer: Option B

Solution:

21. Calculate the power dissipation of a diode having I D = 40 mA.

A) 28 mW

B) 28 W

C) 280 mW

D) Undefined

View Answer:
Answer: Option A

Solution:

22. Which capacitance dominates in the reverse-bias region?

A) depletion
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B) conversion

C) Diffusion

D) None of the above

View Answer:
Answer: Option A

Solution:

23. Which capacitance dominates in the forward-bias region?

A) Diffusion

B) Transition

C) Depletion

D) None of the above

View Answer:
Answer: Option A

Solution:

24. At what kind of operating frequency diffusion or transition is a capacitor represented in

A) Low frequency

B) Moderate frequency

C) Mid frequency

D) Very high frequency

View Answer:
Answer: Option D

Solution:

25. What is the value of the transition capacitance for a silicon diode when V D = 0?

A) 1 pF

B) 3 pF
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C) 5 pF

D) 10 pF

View Answer:
Answer: Option B

Solution:

26. Which of the following devices can check the condition of a semiconductor diode?

A) Digital display meter (DDM)

B) Multimeter

C) Curve tracer

D) All of the above

View Answer:
Answer: Option D

Solution:

27. What does a high resistance reading in both forward- and reverse-bias directions
indicate?

A) A good diode

B) An open diode

C) A shorted diode

D) A defective ohmmeter

View Answer:
Answer: Option B

Solution:

28. The condition of a semiconductor diode can be determined quickly using a _________.

A) DDM

B) VOM

C) curve tracer
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D) Any of the above

View Answer:
Answer: Option D

Solution:

29. Determine the nominal voltage for the Zener diode at a temperature of 120°C if the
nominal voltage is 5.1 volts at 25°C and the temperature coefficient is 0.05%/°C.

A) 4.6 V

B) 4.86 V

C) 5.1 V

D) 5.34 V

View Answer:
Answer: Option D

Solution:

30. Calculate the temperature coefficient in %/°C of a 10-V nominal Zener diode at 25°C if
the nominal voltage is 10.2 V at 100°C.

A) 0.0238

B) 0.0251

C) 0.0267

D) 0.0321

View Answer:
Answer: Option C

Solution:

31. In which of the following color(s) is (are) LEDs presently available?

A) Yellow

B) White

C) Orange

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D) All of the above

View Answer:
Answer: Option D

Solution:

32. What is the maximum power rating for LEDs?

A) 150 mW

B) 500 mW

C) 1 W

D) 10 W

View Answer:
Answer: Option A

Solution:

33. In which of the following is the light intensity measured?

A) Candela

B) Efficacy

C) Flux

D) Illumination

View Answer:
Answer: Option A

Solution:

34. What is the range of the operating voltage level for LEDs?

A) 5–12 mV

B) 1.7–3.3 V

C) 5–12 V

D) 20–25 V

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View Answer:
Answer: Option B

Solution:

35. In general, LEDs operate at voltage levels from _____ V to _____ V.

A) 1.0, 3.0

B) 1.7, 3.3

C) 0.5, 4.0

D) None of the above

View Answer:
Answer: Option B

Solution:

FILL IN THE BLANK QUESTIONS

A) diode

B) transistor

C) operational amplifier

D) SCR

View Answer:
Answer: Option A

Solution:

2. The term ________ is often used when comparing the resistance level of materials.

A) permittivity

B) inductivity

C) conductivity

D) resistivity

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View Answer:
Answer: Option D

Solution:

3. In the atomic lattice the _______ and _______ form the nucleus.

A) electrons, neutrons

B) electrons, protons

C) neutrons, protons

D) None of the above

View Answer:
Answer: Option C

Solution:

4. An increase in temperature of a semiconductor can result in a _______ in the number of

A) substantial increase

B) substantial decrease

C) slight decrease

D) no change

View Answer:
Answer: Option A

Solution:

5. Ge and Si have a(n) _______ coefficient in forward bias.

A) positive temperature

B) negative temperature

C) absolute temperature

D) temperature free

View Answer:
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Answer: Option B

Solution:

6. Any electron that has left its parent atom has _______ energy state relative to any electron
in the atomic structure.

A) the same

B) a lower

C) a higher

D) an undefined

View Answer:
Answer: Option C

Solution:

7. Introducing those impurity elements that have _______ valence electrons creates the n-
type material.

A) 0

B) 3

C) 4

D) 5

View Answer:
Answer: Option D

Solution:

8. In n-type material the _______ is called the majority carrier.

A) electron

B) hole

C) proton

D) neutron

View Answer:
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Answer: Option A

Solution:

9. The diffused impurities with _______ valence electrons are called acceptor atoms.

A) 0

B) 3

C) 4

D) 5

View Answer:
Answer: Option B

Solution:

10. The reverse-saturation current level is typically measured in _______.

A) pA

B) µA

C) mA

D) A

View Answer:
Answer: Option B

Solution:

11. The depletion width _______ in the forward bias, which results in having a majority flow
across the junction.

A) widens

B) remains unchanged

C) shrinks

D) widens and shrinks alternatively

View Answer:
Answer: Option C
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Solution:

12. The forward characteristics curve of a diode grows in _______ form.

A) linear

B) exponential

C) logarithmic

D) sinusoidal

View Answer:
Answer: Option B

Solution:

13. The potential at which the characteristics curve vertical rise occurs is commonly referred
to as the _______.

A) offset

B) threshold

C) firing potential

D) All of the above

View Answer:
Answer: Option D

Solution:

14. The reverse saturation current Is will just _______ in magnitude for every 10° C increase in
temperature.

A) double

B) remain the same

C) halve

D) triple

View Answer:
Answer: Option A

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Solution:

15. Diodes are connected _______ to increase the current-carrying capacity.

A) in series

B) in parallel

C) in parallel-series

D) None of the above

View Answer:
Answer: Option B

Solution:

16. The _______ the current through a diode, the _______ the dc resistance level.

A) higher, lower

B) lower, lower

C) lower, higher

D) higher, higher

View Answer:
Answer: Option C

Solution:

17. Varying the _______ can control the location of the Zener region.

A) forward current

B) doping levels

C) forward voltage

D) dc resistance

View Answer:
Answer: Option B

Solution:

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18. The test current in a Zener diode IZT is the current defined by the _______ power level.

A) 0.25

B) 0.5

C) 0.75

D) 1.00

View Answer:
Answer: Option A

Solution:

19. The heavier the current in a Zener diode in reverse bias, _______ dynamic resistance
value.

A) the more the

B) the less the

C) there is substantially more

D) there is no change in the

View Answer:
Answer: Option B

Solution:

20. The intensity of LED is greatest at _______ degrees and the least at _______ degrees.

A) 0, 90

B) 45, 90

C) 0, 45

D) 90, 180

View Answer:
Answer: Option A

Solution:

21. The temperature coefficient can be _______ for different Zener levels.
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A) positive

B) negative

C) zero

D) All of the above

View Answer:
Answer: Option D

Solution:

22. The reverse recovery time of most commercial switching diodes is in the range of
_______.

A) picoseconds

B) a few nanoseconds

C) several microseconds

D) milliseconds

View Answer:
Answer: Option B

Solution:

23. The ac resistance of a diode is the _______ of the characteristic curve at the Q-point of
operation.

A) reciprocal of the slope

B) slope

C) midpoint

D) average value

View Answer:
Answer: Option A

Solution:

24. Generally the value of ac resistance is _______ the value of dc resistance at the same
operating point.
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A) smaller than

B) larger than

C) the same as

D) unrelated to

View Answer:
Answer: Option A

Solution:

25. The reverse-bias current _______ with the increase of temperature.

A) decreases

B) increases

C) remains the same

D) None of the above

View Answer:
Answer: Option B

Solution:

Check your work.

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