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TO-92 Plastic-Encapsulate Transistors: Transistor (PNP)

This document provides specifications for the 2SA1273 PNP transistor in a TO-92 plastic package. Key details include: 1. Maximum ratings for voltage, current, power and temperature. 2. Electrical characteristics including breakdown voltages, current gains, saturation voltages and transition frequency. 3. Typical characteristics graphs showing relationships between collector current and collector-emitter voltage/base-emitter voltage. 4. Classification ranges for current gain based on initial measurement.

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Luis Luis Garcia
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0% found this document useful (0 votes)
148 views2 pages

TO-92 Plastic-Encapsulate Transistors: Transistor (PNP)

This document provides specifications for the 2SA1273 PNP transistor in a TO-92 plastic package. Key details include: 1. Maximum ratings for voltage, current, power and temperature. 2. Electrical characteristics including breakdown voltages, current gains, saturation voltages and transition frequency. 3. Typical characteristics graphs showing relationships between collector current and collector-emitter voltage/base-emitter voltage. 4. Classification ranges for current gain based on initial measurement.

Uploaded by

Luis Luis Garcia
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 2

TO-92 Plastic-Encapsulate Transistors

2SA1273 TRANSISTOR (PNP)

FEATURES
Complementary to KTC3205.

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit


VCBO Collector-Base Voltage -30 V
VCEO Collector-Emitter Voltage -30 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -2 A 1. Emitter 2. Base 3. Collector
TO-92 Plastic Package
PC Collector Power Dissipation 1 W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit

Collector-base breakdown voltage V(BR)CBO IC=-1mA, IE=0 -30 V

Collector-emitter breakdown voltage V(BR)CEO IC= -10mA, IB=0 -30 V

Emitter-base breakdown voltage V(BR)EBO IE= -1mA, IC=0 -5 V

Collector cut-off current ICBO VCB=-30V, IE=0 -0.1 μA

Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 μA

DC current gain hFE VCE= -2V, IC=-500mA 100 320

Collector-emitter saturation voltage VCE(sat) IC=-1.5A, IB=-30mA -2.0 V

Base-emitter voltage VBE VCE= -2V, IC= -500mA -1.0 V

Transition frequency fT VCE= -2V, IC= -500mA 120 MHz

Collector output capacitance Cob VCB=-10V, IE=0, f=1MHZ 48 pF

CLASSIFICATION OF hFE(1)
Rank O Y

Range 100-200 160-320

Page 1 of 2 3/26/2014
Typical Characteristics 2SA1273
Static Characteristic HFE —— IC
-1200 1000
COMMON EMITTER
Ta=25℃
-1000 -5mA
(mA)

-4.5mA Ta=100℃

hFE
-800
-4mA
IC

DC CURRENT GAIN
-3.5mA Ta=25℃
COLLECTOR CURRENT

-600 -3mA 100

-2.5mA

-400 -2mA

-1.5mA

-200 -1mA
COMMON EMITTER
IB=-0.5mA VCE= -2V
-0 10
-0 -1 -2 -3 -4 -5 -6 -1 -10 -100 -1000 -2000

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA)

VCEsat —— IC VBEsat —— IC
-1000 -1000
-900
COLLECTOR-EMITTER SATURATION

BASE-EMITTER SATURATION

-600
VOLTAGE VBEsat (mV)
VOLTAGE VCEsat (mV)

Ta=25℃
-100
Ta=100 ℃ Ta=100 ℃

-300
Ta=25℃

-10

β=50 β=50
-1
-1 -10 -100 -1000 -2000 -1 -10 -100 -1000 -2000

COLLECTOR CURRENT IC (mA) COLLECTOR CURREMT IC (mA)

IC —— VBE fT —— IC
-2000 200
-1000
(MHz)
(mA)

100

-100
fT
IC

TRANSITION FREQUENCY
COLLECTOR CURRENT

0℃
a 10

-10
T =


a 25
T =

-1

COMMON EMITTER
COMMON EMITTER VCE=-2V
VCE= -2V Ta=25℃
-0.1 10
-300 -400 -500 -600 -700 -800 -900 -1000 -10 -100

BASE-EMMITER VOLTAGE VBE (mV) COLLECTOR CURRENT IC (mA)

Cob/Cib —— VCB/VEB Pc —— Ta
1000 1200
f=1MHz
IC=0/IE=0
Ta=25 ℃ 1000
COLLECTOR POWER DISSIPATION
(pF)

100 800
Cib
CT

Pc (mW)
CAPACITANCE

600
Cob

10 400

200

1 0
-0.1 -1 -10 -30 0 25 50 75 100 125 150

COLLECTOR-BASE VOLTAGE VCB/VEB (V) AMBIENT TEMPERATURE Ta (℃ )

Page 2 of 2 3/26/2014

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