Design of Small Printed Multiband Loop Antennas For Short Range Wireless (SRW) Applications
Design of Small Printed Multiband Loop Antennas For Short Range Wireless (SRW) Applications
Electrical Engineering
and Computer Science Loop Antennas for Short Range
Wireless (SRW) Applications
60(1), pp. 51-59, 2016
DOI: 10.3311/PPee.9046
Creative Commons Attribution b Attila Zólomy1*, Tamás Bódi1, Eric Unruh2, Zoltán Vida1
Abstract 1 Introduction
Worldwide application of wireless IoT and telemetry solu- Cost reduction is a major driving force in short range wire-
tions are more cost effective (require lower manufacturing and less (SRW) application design. Rapid spreading of door open-
logistic cost) and more immune against interferences, if they ers, panic buttons for elderly/disabled peoples, intelligent home
are inherently able to operate in multiple frequency bands. systems, automatic meter reading (AMR), mesh networks and
Switched current high impedance PA configurations driving other internet of things (IoT) solutions (smart watches, bulbs,
high impedance printed antennas with very few discrete com- sensors, phones etc.) can be observed in the recent years due
ponents have very low cost and yields good efficiency in the to this. Beside the low manufacturing cost (e.g. crystal less,
0…+10dBm power range. However, one major bottleneck is cheap radio ICs with printed antennas and few discrete com-
the difficulty of the high impedance multiband antenna design. ponents), low worldwide logistics and maintenance cost (e.g.
In this paper, investigation, design and measured results of long battery life) are essential as well. Radios able to operate
multiband, high impedance, small, printed UHF loop antennas at several bands (allowed by the different regional standards)
are presented. The built antenna are inherently tuned with only can be manufactured and spread-out worldwide in higher vol-
two discrete capacitors to properly terminate the applied high umes with lower expenses.
impedance, highly efficient switched current power amplifier Increasing number of radio devices also makes the inter-
(PA) in the targeted two UHF bands. The presented design ference problems more critical. A typical example is the EU
method is applicable for more than two band operations and 868M ISM band where the 4G LTE mobile technology causes
for higher frequency bands as well. serious interference problems. A radio link with multiband
capability can vary the operational band if strong link degra-
Keywords dation occurs due to the interferences.
IoT devices, Multiband antenna design, inherently tuned small Design of multiband printed antennas are challenging. Popu-
loop, low bill of material, high impedance efficient PA lar multiband antenna types are the unbalanced, low impedance
(50 Ohm) monopoles and its derivatives like PIFA or IFA [1].
However, in the 0…+10dBm power regime higher impedance
antennas (driven by high impedance PAs) can work more effi-
ciently in the typical 2...3.6V supply voltage range [2]. Other
configurations with good efficiency applies either switching
mode (Class E, Class C etc.) PAs [3], or a 50 Ohm system with
a DCDC converter. However, both has disadvantages. One of
them is the increased bill of material and cost. Switching mode
PAs generate rather strong harmonics and thus, need compli-
cated matching with strong filtering. A DCDC converter solu-
tion is inherently expensive and besides, needs a complicated
and expensive supply filtering to avoid up converted spurs (i.e.
1
Silicon Laboratories Hungary Kft., the so-called “Christmas three” spectrum). Other problem with
H-1037 Budapest, Záhony u. 7, Hungary the switching mode PAs is the high voltage peak on the output
2
+Silicon Laboratories Sunnyvale office FET’s drain, which arise reliability issues.
940 Stewart Drive, Sunnyvale, CA 94085, USA One popular low cost, high impedance antenna type is the
*
Corresponding author, e-mail: zolomy@silabs.com small loop [4]. It is inherently inductive, so it can be tuned at
52 Period. Polytech. Elec. Eng. Comp. Sci. A. Zólomy, T. Bódi, E. Unruh, Z. Vida
parallel resonating small loop. The two other curves (pink
and orange) shows the case when a proper parallel reactance
(pink = inductance below resonance, or orange = capacitance
above resonance) is introduced. With the addition of the paral-
lel reactances, the curves approach the horizontal axis of the
Smith chart in a parallel resonance fashion. If the reactances
are simultaneously provided by a real parallel resonant circuit,
two parallel resonances show up on both sides of the series
resonance as shown in Fig. 6 and Fig. 7 (magnitude curve).
1 1 1
YIN = + J ωCPAR + +
J ω LPAR RPAR J ω L + 1
SER + RSER
J ωCSER
(1)
Fig. 5 Impedance locus of the series resonating big loop
alone (blue curve), and with parallel reactances (pink curve The aim is to calculate the new resonant frequencies, besides
with inductance, orange curve with capacitance). both resonators have high Q. So to simplify the calculation the
losses are neglected.
After some algebraic steps one can derive the pure reactive
input admittance.
2
ω2 ω2
1 − 2 − ω2
2
ω2
ω0 1
1 − 2
− 2
CSER LPAR ω0 ωOFFS
YIN = − j =−j
ω 2
ω2
ω LPAR 1 − 2 ω LPAR 1 − 2
ω0 ω0
(3)
Where ω0 is the original resonant frequency and ωOFFS is a rela-
tive offset:
1 1 1
ω0 = = , ωOFFS = , (4)
LPARCPAR LSERCSER LPARCSER
Fig. 6 Impedance locus of the antenna equivalent circuit of The denominator of Eq. (3) shows that the series resonance
Fig. 4, with identical series and parallel resonant frequencies.
i.e. where the YIN has a pole, is at the original ω0 resonant
The interaction between the two resonators yields two parallel
frequency. While the parallel resonances (i.e. where the nomi-
resonances below and above the series resonance
nator is zero) are detuned. To calculate them the nominator of
Eq. (3) should be decomposed into multiplication factors as
(5)
From this condition two second order equations yield for the
parallel resonant frequencies (Eq. (6) and (7)). Solving these
equations four frequency solutions are derived (Eq. (8) and (9)).
ω2 ω
− −1 = 0 (6)
ω0 ωOFFS
2
ω2 ω
+ −1 = 0 (7)
ω0 ωOFFS
2
1 1 4
± + 2
ωOFFS ωOFFS
2
ω0
ω1,2 = (8)
2
ω02 Fig. 8 Impedance magnitude curve change if the Lpar/Cpar ratio is varied
(the resonant frequencies and the Lser/Cser ratio are fixed)
1 1 4
− ± + 2 Figure 9 shows the effect of the Lser/Cser ratio change
ωOFFS ωOFFS
2
ω0
ω3,4 = (9) (again the Lser*Cser product i.e. the series resonant frequency
2
ω02 is constant). Here with increasing ratio the frequency offset
decreases and the impedances increase. The design target
As LPAR<<LSER and CSER<<CPAR then ω0<<ωOFFS , several sim- is to adjust the resonances to the specific desired operating
plifications are possible in Eq. (8) and (9). frequencies, and to simultaneously adjust the impedances of
the resonances to the targeted value. The locations of the two
1 2
± parallel resonances can be tuned by the series resonant fre-
ωOFFS ω0 ω02
ω1,2 ≅ = ± ω0 (10) quency (which again equals to the parallel one) and by the
2 2ωOFFS
ω02 offset. Many good solutions (i.e. many good Lser/Cser and
Lpar/Cpar ratio pairs) exist if the designer is free to choose the
impedance. If the impedances are also specified, then only one
1 2
− ± solution exists as in this case both the L/C ratios and the L-C
ωOFFS ω0 −ω02
ω3,4 ≅ = ± ω0 (11) products (i.e. the resonant frequencies) are fixed.
2 2ωOFFS
ω02 Some secondary effects also have slight influences. These
are the losses and the coupling between the loops. The losses
Again as ω0<<ωOFFS., the offset part is much smaller than the ω0 are mainly determined by the capacitor Qs, so can be consid-
and thus, only two solutions falls to the positive frequency range ered as constants independently from the loop size tuning. The
(Eq. (12) and (13)). They are the real parallel resonant frequencies same is assumed for the coupling.
shifted by the offset part around the original ω0 resonance. The required impedance value depends on the target power
ω02 level and on the allowed voltage swing on the PA. The Si4010
ω p1 = ω0 + (12) type RF IC requires ~600 Ohm differential termination imped-
2ωOFFS
ance at 3V supply voltage to deliver ~+9…+10 dBm to the
antenna at the targeted frequencies [8]. In Figure 10 a dual band
ω02
ω p 2 = ω0 − (13) (315 & 390 MHz) loop example design is shown with fixed PA
2ωOFFS
cap (Cpar=28.4 pF), and with a Cser value of 4.2 pF. The Q of
the applied 0402 SMD capacitors are typically around hundred,
4 Tuning of the Dual band Loop so the values of the parallel equivalent losses of the caps (denoted
The resonances behave differently for the tuning of the par- by Rpar_Q and Rser_Q) are approx. 2 K and 11 K, respectively.
allel or series resonant circuit. Figure 8 shows the case when The antenna is designed with the Sonnet planar EM simulator [9].
the Lpar/Cpar ratio is varied (while maintaining a constant The antenna impedance is the proper ~550…600 Ohm at both
54 Period. Polytech. Elec. Eng. Comp. Sci. A. Zólomy, T. Bódi, E. Unruh, Z. Vida
target frequencies as shown in Fig. 11. Unfortunately, the resulted 5 Dual Band Loop Design with Variable PA
size of the main loop is very small, only 14 mm by 14 mm, which Capacitance
yields a very poor antenna gain at the targeted operation frequen- A possible way to overcome the problem is to introduce
cies: that is ~-32 dBi at 315 MHz and ~-25 dBi at 390 MHz. It an additional design of freedom i.e. the variation of the PA
can be concluded that the proper solution which yields the proper capacitance (Cpar). This method will be investigated here.
resonant frequencies with the proper impedances may not have a The Si4010 radio chip has a built in automatic antenna tuning
large enough loop size for good radiation efficiency. circuitry, which tunes the PA output capacitance (i.e. Cpar) to
maintain the resonance at the output. This feature is used here.
The general equivalent circuit of the multiband loop antenna
is shown in Fig. 12.
A2 A2 f 4
RRAD = 320π 4 4 = 320π 4 4 (15)
λ v
where:
A is the area of the loop: A=a1*a2 and b is an effective
Fig. 10 Dimensions of the designed 315 & 390 MHz dual band loop cross section derived from the printed trace cross section
dimensions: b=0.35*t+0.24*w.
Fig. 11 Impedance magnitude curves of the designed 315 & 390 MHz dual Fig. 13 Loop dimension parameters for gain and inductance calculations
band loop. The targeted impedance at resonance is ~ 600 Ohm
approx. ~-14 dBi antenna gain (incl. losses) can be achieved, Lpar 3 nH 11.9 nH
which is a significant, ~11 dBi improvement. Cser2 short 22 pF
However, there are problems with the realization. The
Lmain-Loop 84 nH 83 nH
first problem is that the required Cpar tuning range is ~19
Cser 1.2 pF 1.2 pF
pF, which is higher than the available PA capacitance tuning
range of the applied Si4010 (~2.7 pF…12.5 pF=9.8 pF) RF
IC. Moreover, the tuning range of the applied RFIC should The simulated impedance magnitude vs. frequency curves
be significantly higher than the required by the antenna to at different sizes of the small loop are shown in Fig. 16. Here
compensate other effects, like technological spreading or hand the Cser2 cap is always tuned to yield a ~symmetrical two
effect. The second problem is the very small inductance value peak shaped impedance curve. The highlighted curve is the
of the small loop (2*Lpar). It is only 6 nH, which is practically case with the parameter setting of the third column of Table 1.
cannot be realized. The third big problem is that the common It has resonances at the targeted frequencies with ~600 Ohm
route inductance of the small and main loop (denoted by Lin in peak impedances. So with this approach the impedance peaks
56 Period. Polytech. Elec. Eng. Comp. Sci. A. Zólomy, T. Bódi, E. Unruh, Z. Vida
can be tuned to be nearly at the right bands with the right the small loop an additional degree of freedom appears in the
impedances and hence, no or minimal Cpar tuning is required. design. With this additional tuning possibility one can adjust
An important note here is, that nearly half of the total both the offset and peak impedance values according to the
required ~14 pF Cpar value is the Si4010 PA capacitance and needs with the enlarged main loop size.
the other half is realized by an SMD capacitor. As the Si4010 Applying the conclusions of the above investigations a
PA has lower Q than the SMD with the ~7 pF PA capacitance dual band 315/390 MHz loop antenna is designed and built
setting the loss (Rres) value is determined more by the PA. (Fig. 17). The size of the main loop is 29 x 38 mm, the small
The 2 K value of Rres here represents this. It is also shown loop dimensions are 5.5 x 10 mm. The simulated impedance
in Table 1, that a small common inductance (Lin= 1nH) is magnitude curve are given in Fig. 18 with a fixed PA capaci-
allowed between the main and the small loop, so the antenna tance of Cpar=14 pF. The main loop series capacitance (Cser)
layout can be realized. in the simulation is 1.25 pF while the small loop series capaci-
The conclusion is that by introducing a proper series Cser2 tance (Cser2) is 21 pF.
cap in the small loop the dual band antenna structure can be There is possibility to design antennas for three or even
tuned well with a much larger main loop size with a physi- more band operation with this method. For each band an addi-
cally realizable small loop size and with a realizable antenna tional loop with its own series caps has to be applied in the
structure. The effect of the variation of the small loop size antenna. However, the design complexity increases rapidly.
and Cser2 capacitance tuning is also shown in Fig. 16. The E.g. a three band antenna was successfully designed and meas-
results of two other settings are shown: one with a smaller and ured as well, but not detailed in this paper.
another with a larger small loop size. Here the main loop size
is constant and the series Cser2 value is adjusted to have sym-
metrical peak shape.
Fig. 17 Designed and built 315/390 MHz dual band loop antenna with 29x38
mm large main loop and with a Cpar of 14 pF.
7 Impedance Measurement
During the bench measurements a Cser cap of 1.3 pF and
Cser2 cap of 22 pF are used (1.25 pF and 21 pF do not exists).
Fig. 16 Simulated impedance magnitude vs. frequency curves at different
Due to the slightly different Cser and Cser2 tuning is required
small loop sizes and Cser2 capacitance values. The Cser2 value is tuned to
have a symmetrical two peak shape in all cases. in the bench. Also there are secondary effects (pcb cutting edge
close to the antenna, battery on the gnd plane, nearby plastic
etc.) which are cannot be taken into account in the 2.5D pla-
With larger small loop the offset and the impedance nar Sonnet simulations. Due to these, further decrease of Cpar
decreases. The opposite happen if the small loop size decreased. value required. It should be emphasized again that a small
This clearly shows that by introducing the Cser2 series cap in change in the Cser capacitor and/or in the main loop parasitics
58 Period. Polytech. Elec. Eng. Comp. Sci. A. Zólomy, T. Bódi, E. Unruh, Z. Vida
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