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High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching

The MP4304 is a silicon NPN epitaxial power transistor module containing four high-gain transistors in a single package. It is designed for high power switching applications using inductive loads. The module provides high collector power dissipation of 4.4W and current of 3A, with a current gain of 600 minimum. It is packaged in a small 12-pin molded SIP package suitable for dense mounting.

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0% found this document useful (0 votes)
61 views5 pages

High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching

The MP4304 is a silicon NPN epitaxial power transistor module containing four high-gain transistors in a single package. It is designed for high power switching applications using inductive loads. The module provides high collector power dissipation of 4.4W and current of 3A, with a current gain of 600 minimum. It is packaged in a small 12-pin molded SIP package suitable for dense mounting.

Uploaded by

Edson Costa
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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MP4304

TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type


(Four High Gain Power Transistors inOne)

MP4304
Industrial Applications
High Power Switching Applications
Unit: mm
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching

• Small package by full molding (SIP 12 pin)


• High collector power dissipation (4-device operation)
: PT = 4.4 W (Ta = 25°C)
• High collector current: IC (DC) = 3 A (max)
• High DC current gain: hFE = 600 (min) (VCE = 2 V, IC = 1 A)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Collector-base voltage VCBO 80 V


Collector-emitter voltage VCEO 80 V
Emitter-base voltage VEBO 7 V
DC IC 3 JEDEC ―
Collector current A
Pulse ICP 5 JEITA ―
Continuous base current IB 0.5 A
TOSHIBA 2-32C1B
Collector power dissipation
PC 2.2 W Weight: 3.9 g (typ.)
(1-device operation)
Collector power dissipation
PT 4.4 W
(4-device operation)
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).

Array Configuration

2 3 4 9 10 11

1 5 8 12

6 7

1 2006-10-27
MP4304
Marking

Part No. (or abbreviation code)


MP4304
JAPAN Lot No.

A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.

Thermal Characteristics

Characteristics Symbol Max Unit

Thermal resistance from junction to


ambient ΣRth (j-a) 28.4 °C/W
(4-device operation, Ta = 25°C)
Maximum lead temperature for
soldering purposes TL 260 °C
(3.2 mm from case for 10 s)

Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current ICBO VCB = 80 V, IE = 0 A ― ― 10 μA


Emitter cut-off current IEBO VEB = 7 V, IC = 0 A ― ― 10 μA
Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 A 80 ― ― V
Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 A 80 ― ― V
hFE (1) VCE = 2 V, IC = 1 A 600 ― ―
DC current gain ―
hFE (2) VCE = 2 V, IC = 2 A 150 ― ―
Collector-emitter VCE (sat) IC = 1.5 A, IB = 15 mA ― 0.25 0.5
Saturation voltage V
Base-emitter VBE (sat) IC = 1.5 A, IB = 15 mA ― ― 1.2
Transition frequency fT VCE = 2 V, IC = 0.1 A ― 85 ― MHz
Collector output capacitance Cob VCB = 10 V, IE = 0 A, f = 1 MHz ― 50 ― pF

Turn-on time ton Output ― 0.4 ―


IB1
Input
20 Ω

20 μs IB2
Switching time Storage time tstg ― 2.6 ― μs
IB1

VCC = 30 V
IB2

Fall time tf ― 1.3 ―


IB1 = −IB2 = 15 mA, duty cycle ≤ 1%

Flyback-Diode Rating and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Maximum forward current IFM ― ― ― 3 A


Reverse current IR VR = 80 V ― ― 0.4 μA
Reverse voltage VR IR = 100 μA 80 ― ― V
Forward voltage VF IF = 1 A ― ― 1.5 V

2 2006-10-27
MP4304

IC – VCE IC – VBE
3 3.2
10 Common
20 Common emitter
emitter 2.8
2.5 VCE = 1 V
5
Ta = 25°C
(A)

(A)
2.4

2 2
Collector current IC

Collector current IC
2.0

1.5 1.6
Ta = 100°C 25 −55
1
1.2
1
0.8
IB = 0.5 mA
0.5
0.4

0 0
0 1 2 3 4 5 6 7 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V)

hFE – IC VCE – IB
3000 0.5
Common emitter
100
VCE (V)

Ta = 25°C
1000 25 0.4
DC current gain hFE

Ta = −55°C
Collector-emitter voltage

0.3
300
IC = 3 A

0.2
100 2

Common emitter
VCE = 1 V 0.1 1

30 0.5
0.01 0.03 0.1 0.3 1 3 0.1
0
Collector current IC (A) 0.3 1 3 10 30 100 300 1000

Base current IB (mA)

VCE (sat) – IC
3 VBE (sat) – IC
Common emitter 10
Collector-emitter saturation voltage

IC/IB = 100 Common emitter


Base-emitter saturation voltage

1 5 IC/IB = 100
3
VCE (sat) (V)

0.5
VBE (sat) (V)

0.3
1 Ta = −55°C

0.1 0.5 25
Ta = 100°C 0.3 100
0.05
−55 25
0.03
0.1
0.01 0.03 0.1 0.3 0.5 1 3 5 0.01 0.03 0.1 0.3 0.5 1 3 5

Collector current IC (A) Collector current IC (A)

3 2006-10-27
MP4304

rth – tw

Curves should be applied in thermal limited area. The figure


(3)
Transient thermal resistance rth (°C/W) shows thermal resistance per device versus pulse width. (4)
100 These curves are obtained by using single nonrepetitive
pulse under the condition of devices attached on a circuit
board with no heat sink. (1)
(1) 1 device operation
(2)
(2) 2-device operation
10 (3) 3-device operation
(4) 4-device operation

Circuit board

0.001 0.01 0.1 1 10 100 1000

Pulse width tw (s)

Safe Operating Area PT – Ta


30 8
Attached on a circuit board
(1) 1device operation
PT (W)

(2) 2-device operation


(3) 3-device operation
6
(4) 4-device operation
10
Total power dissipation

(4)

IC max (pulsed)* 4
5 (3) Circuit board
100 μs*
1 ms* (2)
3
(A)

10 ms* 2 (1)
Collector current IC

0
1 0 40 80 120 160 200

Ambient temperature Ta (°C)


0.5

0.3

*: Single nonrepetitive
pulse Ta = 25°C
0.1 Curves must be derated
linearly with increase in
temperature. ΔTj – PT
VCEO max 160
0.05
ΔTj (°C)

5 10 30 50 100 200

Collector-emitter voltage VCE (V) (1) (2) (3) (4)


120
Channel temperature increase

80

Circuit board
Attached on a circuit board
40 (1) 1-device operation
(2) 2-device operation
(3) 3-device operation
(4) 4-device operation
0
0 2 4 6 8 10

Total power dissipation PT (W)

4 2006-10-27
MP4304

RESTRICTIONS ON PRODUCT USE 20070701-EN

• The information contained herein is subject to change without notice.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.

• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.

• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.

• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.

• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

5 2006-10-27

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