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DISCRETE POWER DIODES and THYRISTORS

DATA BOOK

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Bulletin I2094/A

SD233N/R SERIES
FAST RECOVERY DIODES Stud Version

Features
High power FAST recovery diode series 235A
4.5 µs recovery time
High voltage ratings up to 4500V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Compression bonded encapsulation
Stud version case style B-8
Maximum junction temperature 125°C

Typical Applications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications

Major Ratings and Characteristics

Parameters SD233N/R Units

IF(AV) 235 A

@ TC 60 °C

IF(RMS) 370 A

IFSM @ 50Hz 5500 A

@ 60Hz 5760 A

I 2t @ 50Hz 151 KA2s

@ 60Hz 138 KA2s

V RRM range 3000 to 4500 V

trr 4.5 µs

@ TJ 125 °C
case style
TJ -40 to 125 °C B-8

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ELECTRICAL SPECIFICATIONS
Voltage Ratings

Voltage V RRM max. repetitive VRSM , maximum non- I RRM max.

Type number Code peak and off-state voltage repetitive peak voltage TJ = 125°C
V V mA
30 3000 3100
36 3600 3700
SD233N/R 50
40 4000 4100
45 4500 4600

Forward Conduction
Parameter SD233N/R Units Conditions
12
I F(AV) Max. average forward current 235 A 180° conduction, half sine wave.
@ Case temperature 60 °C
I F(RMS) Max. RMS current 370 A @ 45°C case temperature
I FSM Max. peak, one-cycle 5500 t = 10ms No voltage
non-repetitive forward current 5760 t = 8.3ms reapplied
A
4630 t = 10ms 50% VRRM
4840 t = 8.3ms reapplied Sinusoidal half wave,

I 2t Maximum I2t for fusing 151 t = 10ms No voltage Initial TJ = TJ max.

138 t = 8.3ms reapplied
KA2s
107 t = 10ms 50% VRRM
98 t = 8.3ms reapplied
I 2 √t Maximum I2√t for fusing 1510 KA2√s t = 0.1 to 10ms, no voltage reapplied
V F(TO)1 Low level of threshold voltage 1.56 (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
V
V F(TO) 2 High level of threshold voltage 1.68 (I > π x IF(AV)), TJ = TJ max.
r f1 Low level of forward slope resistance 1.64 (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
mΩ
r f2 High level of forward slope resistance 1.53 (I > π x IF(AV)), TJ = TJ max.
V FM Max. forward voltage 3.2 V Ipk= 1000A, TJ = 125°C, tp = 400 µs square pulse

2222222222222

Recovery Characteristics
Test conditions Max. values @ TJ = 125 °C
Code TJ = 25 oC

typical t I di/dt (*) V t Q I

rr pk r rr rr rr
@ 25% IRRM Square Pulse @ 25% IRRM
(µs) (A) (A/µs) (V) (µs) (µC) (A)

S50 5.0 1000 100 - 50 4.5 680 240

(*) di/dt = 25A/us @ TJ = 25°C

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Data SheetSeries

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

Fig. 3 - Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics

Fig. 5 - Maximum Non-repetitive Surge Current To Order Fig. 6 - Maximum Non-repetitive Surge Current
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Fig. 7 - Forward Voltage Drop Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristic

Fig. 9 - Typical Forward Recovery Characteristics

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Fig. 10 - Recovery Time Characteristics Fig. 11 - Recovery Charge Characteristics Fig. 12 - Recovery Current Characteristics
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Fig. 13 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 14 - Frequency Characteristics

Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 16 - Frequency Characteristics

Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics To Order Fig. 18 - Frequency Characteristics
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SD233N/R Series

Thermal and Mechanical Specification

Parameter SD233N/R Units Conditions
TJ Max. operating temperature range -40 to 125
°C
Tstg Max. storage temperature range -40 to 150
RthJC Max. thermal resistance, junction to case 0.1 DC operation
K/W
RthCS Max. thermal resistance, case to heatsink 0.04 Mounting surface, smooth, flat and greased
T Mounting torque ± 10% 50 Nm Not lubricated threads
wt Approximate weight 454 g
Case style B-8 See Outline Table

∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)

Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions

180° 0.010 0.008 TJ = TJ max.
120° 0.013 0.014
90° 0.017 0.018 K/W
60° 0.025 0.026
23
30° 0.041 0.042

Ordering Information Table

Device Code
SD 23 3 N 45 S50 P S C

1 2 3 4 5 6 7 8 9
1 - Diode
2 - Essential part number
3 - 3 = Fast recovery
4 - N = Stud Normal Polarity (Cathode to Stud)
R = Stud Reverse Polarity (Anode to Stud)
5 - Voltage code: Code x 100 = V RRM (see Voltage Ratings table)
6 - trr code (see Recovery Characteristics table)
7 - P = Stud base B-8 3/4" 16UNF-2A
M = Stud base B-8 M24 X 1.5
8 -7 S = Isolated lead with silicone sleeve
(Red = Reverse Polarity; Blue = Normal Polarity)
T = Threaded Top Terminal 3/8" 24UNF-2A
None = Not isolated lead
9 - C = Ceramic housing

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Outlines Table
CERAMIC HOUSING
26 (1.023) MAX. 5(0.20) ± 0.3(0.01)

12 (0.47) MIN. 10.5 (0.41) DIA.

Case Style B-8

2
C.S. 70mm All dimensions in millimeters (inches)

38 (1.5)
DIA. MAX.

12

SW 45

3/4"-16UNF-2A *

* FOR METRIC DEVICE: M24 x 1.5 - SCREW LENGTH — 21(0.83) MAX.

CERAMIC HOUSING 17 (0.67) DIA.

3/8"-24UNF-2A

38 (1.5)
DIA. MAX.2222222222222

Case Style B-8 with top thread terminal 3/8"

All dimensions in millimeters (inches)

SW 45

3/4"-16UNF-2A *

* FOR METRIC DEVICE: M24 x 1.5 - SCREW LENGTH — 21(0.83) MAX.

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