AOD408

N-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AOD408 uses advanced trench technology to VDS (V) = 30V

provide excellent RDS(ON) and low gate charge. This ID = 18A (VGS = 10V)
device is suitable for use as a load switch or in RDS(ON) < 18mΩ (VGS = 10V)
PWM applications. Standard Product AOD408 is Pb- RDS(ON) < 27mΩ (VGS = 4.5V)
free (meets ROHS & Sony 259 specifications).
AOD408L is a Green Product ordering option.
AOD408 and AOD408L are electrically identical.

TO-252
D-PAK
D

Top View
Drain Connected
to Tab
G
S

G D S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 18
Current G TC=100°C ID 18 A
C
Pulsed Drain Current IDM 40
Avalanche Current C IAR 18 A
C
Repetitive avalanche energy L=0.1mH EAR 40 mJ
TC=25°C 60
B PD W
Power Dissipation TC=100°C 30
TA=25°C 2.5
A PDSM W
Power Dissipation TA=70°C 1.6
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 16.7 25 °C/W
A RθJA
Maximum Junction-to-Ambient Steady-State 40 50 °C/W
Maximum Junction-to-Case B Steady-State RθJC 1.9 2.5 °C/W

Alpha & Omega Semiconductor, Ltd.

AOD408

Electrical Characteristics (T J=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=24V, V GS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 1.8 2.5 V
ID(ON) On state drain current VGS=4.5V, VDS=5V 40 A
VGS=10V, ID=18A 13.6 18
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 18 24
VGS=4.5V, ID=10A 20.6 27 mΩ
gFS Forward Transconductance VDS=5V, ID=18A 25 S
VSD Diode Forward Voltage IS=1A,V GS=0V 0.75 1 V
IS Maximum Body-Diode Continuous Current 18 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1040 1250 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 180 pF
Crss Reverse Transfer Capacitance 110 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.7 0.85 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 19.8 25 nC
Qg(4.5V) Total Gate Charge 9.8 12.5 nC
VGS=10V, V DS=15V, ID=18A
Qgs Gate Source Charge 2.5 nC
Qgd Gate Drain Charge 3.5 nC
tD(on) Turn-On DelayTime 4.5 ns
tr Turn-On Rise Time VGS=10V, V DS=15V, R L=0.82Ω, 3.9 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 17.4 ns
tf Turn-Off Fall Time 3.2 ns
trr Body Diode Reverse Recovery Time IF=18A, dI/dt=100A/µs 19 25 ns
Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=100A/µs 8 nC
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's
specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve
provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
Rev 3: June 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AOD408

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 20
4V

25 10V
16 VDS=5V
4.5V
20 3.5V
12
ID (A)

ID(A)
15 125°C
8
10
VGS=3V 25°C

4
5

0 0
0 1 2 3 4 5 1.5 2 2.5 3 3.5 4
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

24 1.6
VGS=4.5V VGS=10V
22
ID=18A
Normalized On-Resistance

20 1.4
RDS(ON) (mΩ)

18 VGS=4.5V
16 1.2

14 VGS=10V

12 1

10
0 5 10 15 20
0.8
ID (A) 0 25 50 75 100 125 150 175
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature

50 1.0E+01

1.0E+00
40
ID=18A 1.0E-01
RDS(ON) (mΩ)

125°C
IS (A)

30 1.0E-02
25°C
125°C
1.0E-03

20
1.0E-04
25°C
1.0E-05
10
0.0 0.2 0.4 0.6 0.8 1.0
2 4 6 8 10
VSD (Volts)
VGS (Volts) Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

AOD408

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1500
VDS=15V
ID=18A 1250
8
Ciss

Capacitance (pF)
1000
VGS (Volts)

6
750
4
500
Coss
2
250
Crss
0 0
0 4 8 12 16 20 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0
50
T J(Max)=150°C
RDS(ON) T A=25°C
limited 1ms 10µs 40
10.0 10ms 100µs
ID (Amps)

0.1s 30
Power (W)

1s

1.0 10s 20
T J(Max)=150°C
T A=25°C DC
10

0.1
0
0.1 1 10 100
0.001 0.01 0.1 1 10 100 1000
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F)
Ambient (Note F)

10
D=T on/T In descending order
T J,PK =T A+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

RθJA=50°C/W
Thermal Resistance

0.1

PD
0.01
Single Pulse T on
T

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.