Power Transistor Array STA463C

Absolute Maximum Ratings (Ta=25ºC) Electrical Characteristics (Ta=25ºC) External Dimensions STA4 (LF400B)
Symbol Ratings Unit Symbol Test Conditions Ratings Unit
VCBO 115±10 V ICBO VCB = 105V 10max µA 25.25
±0.2

VCEO 115±10 V IEBO VEB = 6V 10max µA

VEBO 6 V VCEO IC = 50mA 105 to 125 V b

±0.2
±0.2

±0.2

9.0
±6 (pulse ±10) a

11.3
IC A hFE VCE = 1V, IC = 1A 400 to 1500

2.3
IB 1 A VCE (sat) IC = 1.2A, IB = 12mA 0.12max V

±0.5
3.2 (Ta=250ºC) W VFEC IFEC = 6A 1.5max V

4.7
PT
18 (Tc=25ºC) W Es/b L = 10mH, single pulse 45min mJ 1.0
±0.25 ±0.15
0.5
(2.54)

Tj 150 ºC
±0.05
9•2.54=22.86
Tstg –55 to +150 ºC Typical Switching Characteristics

±0.15

±0.2
±0.2
±0.5
C1.5
VCC RL IC VBB1 VBB2 IB1 IB2 t on t stg tf

4.0
1.2
0.5
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs)
12 12 1 10 –5 30 –30 0.2 5.7 0.4 1 2 3 4 5 6 7 8 9 10
B C E B C E

a) Type No.
b) Lot No.
(Unit: mm)

■ IC — VCE Characteristics (typ.) ■ VCE (sat) — IC Temperature Characteristics (typ.) ■ IC — VBE Temperature Characteristics (typ.)
(VCE = 1V)
8 0.75 7
I C /IB = 100
7 30mA 6

6 20mA
Ta = 150ºC
VCE (sat) (V)

5
10mA 0.5 75ºC
5
4 25ºC

IC (A)
IC (A)

4 5mA Ta = –55ºC –55ºC

25ºC 3
3 75ºC
3mA 0.25
150ºC 2
2

1 IB = 1mA 1

0 0 0
0 1 2 3 4 5 6 0.01 0.1 1 5 0 0.5 1.0 1.5

VCE (V) IC (A) VBE (V)

■ hFE — IC Temperature Characteristics (typ.) ■ ton• tstg • t f — IC Characteristics ■ j-a — t Characteristics

(VCE = 4V)
2000 10 100
Dual
50 Single pulse
transistor
1000 5 tstg operated
ton•tstg•tf (µS)

Single
(ºC/W)

transistor
500 10 operated
5
Ta = 150ºC
hFE

1
75ºC
j-a

25ºC 0.5 1
100
–55ºC tf VCC = 12V 0.5
50 ton IB1 = – IB2 = 30mA
30 0.1 0.1
0.01 0.1 1 10 0 1 2 3 0.0001 0.001 0.01 0.1 1 10 100 1000

IC (A) Ic (A) t (s)

■ VCE (sat) — IB Temperature Characteristics (typ.) ■ PT — Ta Derating

(Tc = 25ºC)
Equivalent Circuit Diagram
0.75 20
IC = 1.2A

15
3 8
W
VCE (sat) (V)

ith

0.5
in
fin
ite
PT (W)

he

Ta = 150ºC
at
si

10
nk

75ºC
25ºC 2 7
0.25 –55ºC
5
Withou
t heat
sink
4 9
0 0
1 10 100 1000 0 50 100 150

IB (mA) Ta (ºC)

66