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5 Body Effect Extraction PDF

This document provides instructions for extracting the body effect parameter from an MOS transistor simulation using Athena and Atlas. The simulation involves: 1) Simulating an MOS transistor process in Athena and extracting process parameters like oxide thicknesses. 2) Automatically interfacing between Athena and Atlas simulations. 3) Generating simple Id/Vgs curves in Atlas with two different substrate biases of 0V and -1V to measure threshold voltages. 4) Extracting the body effect parameter from the threshold voltages using the standard formula.

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Bhaskar K
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85 views1 page

5 Body Effect Extraction PDF

This document provides instructions for extracting the body effect parameter from an MOS transistor simulation using Athena and Atlas. The simulation involves: 1) Simulating an MOS transistor process in Athena and extracting process parameters like oxide thicknesses. 2) Automatically interfacing between Athena and Atlas simulations. 3) Generating simple Id/Vgs curves in Atlas with two different substrate biases of 0V and -1V to measure threshold voltages. 4) Extracting the body effect parameter from the threshold voltages using the standard formula.

Uploaded by

Bhaskar K
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Body Effect Extraction

Requires: SSuprem 4/S-Pisces


Minimum Versions: Athena 5.22.3.R, Atlas 5.28.1.R

This is a basic MOS Athena to Atlas interface


example simulating two Id/Vgs curves at different
substrate biases and extracting the body effect
(gamma) parameter. This example demonstrates:

Process simulation of a MOS transistor in


Athena
Process parameter extraction (eg. oxide
thicknesses)
Autointerface between Athena and Atlas
Simple Id/Vgs curve generation with
Vbs=0.0V
Ramp of drain voltage
Simple Id/Vgs curve generation with
Vbs=-1.0V
Parameter extraction for body effect

The process simulation, process parameter


extraction and electrode definition for this
example are exactly as described in the first
example in this section.

In Atlas, the whole example is very similar in


syntax to the DIBL parameter extraction example
described previously in this section. The
difference is that different substrate biases are
used instead of different drain biases.

Two threshold voltages are measured using the


extract syntax described in the DIBL extraction
example. The body effect parameter is derived
from the threshold voltages using the standard
formula assuming 0.6V for phi.

To load and run this example, select the Load


button in DeckBuild > Examples. This will copy
the input file and any support files to your
current working directory. Select the Run button
in DeckBuild to execute the example.

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