Si2343CDS

Vishay Siliconix

P-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY FEATURES

• Halogen-free According to IEC 61249-2-21
VDS (V) RDS(on) (Ω) ID (A)a, e Qg (Typ.) Definition
0.045 at VGS = - 10 V - 5.9 • TrenchFET® Power MOSFET
- 30 7 nC • 100 % Rg Tested
0.075 at VGS = - 4.5 V - 4.6
• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS
• Load Switch
TO-236 • Notebook Adaptor Switch
(SOT-23) • DC/DC Converter
S
G 1

3 D

S 2 G

Top View
Si2343CDS (P1)*
* Marking Code D
Ordering Information: Si2343CDS-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit
Drain-Source Voltage VDS - 30
V
Gate-Source Voltage VGS ± 20
TC = 25 °C - 5.9
TC = 70 °C - 4.7
Continuous Drain Current (TJ = 150 °C) ID
TA = 25 °C - 4.2b, c
TA = 70 °C - 3.3b, c A
Pulsed Drain Current IDM - 25
TC = 25 °C - 2.1
Continous Source-Drain Diode Current IS
TA = 25 °C - 1b, c
TC = 25 °C 2.5
TC = 70 °C 1.6
Maximum Power Dissipation PD W
TA = 25 °C 1.25b, c
TA = 70 °C 0.8b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb, d t≤5s RthJA 75 100
°C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 40 50
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 166 °C/W.
e. Package Limited.

Document Number: 65474 www.vishay.com

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Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V
VDS Temperature Coefficient ΔVDS/TJ - 19
ID = - 250 µA mV/°C
VGS(th) Temperature Coefficient ΔVGS(th)/TJ 4.4
Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = - 250 µA - 1.2 - 2.5 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
VDS = - 30 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS µA
VDS = - 30 V, VGS = 0 V, TJ = 55 °C -5
On-State Drain Currenta ID(on) VDS ≤ - 5 V, VGS = - 10 V - 25 A
VGS = - 10 V, ID = - 4.2 A 0.037 0.045
Drain-Source On-State Resistancea RDS(on) Ω
VGS = - 4.5 V, ID = - 3.2 A 0.062 0.075
Forward Transconductancea gfs VDS = - 15 V, ID = - 4.2 A 10 S
Dynamicb
Input Capacitance Ciss 590
Output Capacitance Coss VDS = - 15 V, VGS = 0 V, f = 1 MHz 115 pF
Reverse Transfer Capacitance Crss 93
VDS = - 15 V, VGS = - 10 V, ID = - 4.2 A 13.6 21
Total Gate Charge Qg
7 11
nC
Gate-Source Charge Qgs VDS = - 15 V, VGS = - 4.5 V, ID = - 4.2 A 2.3
Gate-Drain Charge Qgd 3.2
Gate Resistance Rg f = 1 MHz 1 5 10 Ω
Turn-On Delay Time td(on) 30 45
Rise Time tr VDD = - 15 V, RL = 4.5 Ω 25 38
Turn-Off Delay Time td(off) ID ≅ - 3.3 A, VGEN = - 4.5 V, Rg = 1 Ω 16 24
Fall Time tf 8 16
ns
Turn-On Delay Time td(on) 8 16
Rise Time tr VDD = - 15 V, RL = 4.5 Ω 10 20
Turn-Off Delay Time td(off) ID ≅ - 3.3 A, VGEN = - 10 V, Rg = 1 Ω 18 27
Fall Time tf 8 16
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current IS TC = 25 °C - 4.2
A
Pulse Diode Forward Current ISM - 25
Body Diode Voltage VSD IS = - 3.3 A, VGS = 0 V - 0.8 - 1.2 V
Body Diode Reverse Recovery Time trr 17 26 ns
Body Diode Reverse Recovery Charge Qrr 9 18 nC
IF = - 3.3 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Fall Time ta 10
ns
Reverse Recovery Rise Time tb 7
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

www.vishay.com Document Number: 65474

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 Si2343CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25 3.0
VGS = 5 V
VGS = 10 V thru 6 V

20 2.4
I D - Drain Current (A)

I D - Drain Current (A)

15 1.8
VGS = 4 V

10 1.2
TC = 25 °C

5 0.6
VGS = 3 V TC = 125 °C
TC = - 55 °C
0 0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

0.10 1000

0.08 800
R DS(on) - On-Resistance (Ω)

VGS = 4.5 V
C - Capacitance (pF)

Ciss
0.06 600

VGS = 10 V
0.04 400

0.02 200 Coss

Crss

0.00 0
0 5 10 15 20 25 0 5 10 15 20

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

10 1.7

ID = 4.2 A ID = 4.2 A
VGS - Gate-to-Source Voltage (V)

8 VDS = 15 V 1.5
VGS = 10 V
R DS(on) - On-Resistance

VDS = 8 V
(Normalized)

6 1.3
VGS = 4.5 V
VDS = 24 V
4 1.1

2 0.9

0 0.7
0 3 6 9 12 15 - 50 - 25 0 25 50 75 100 125 150

Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)

Gate Charge On-Resistance vs. Junction Temperature

Document Number: 65474 www.vishay.com

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Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.10

ID = 4.2 A

R DS(on) - On-Resistance (Ω)

0.08
I S - Source Current (A)

TJ = 150 °C
10

TJ = 125 °C
TJ = 25 °C 0.06

TJ = 25 °C
1
0.04

0.1 0.02
0.0 0.3 0.6 0.9 1.2 1.5 2 4 6 8 10

VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

2.2 10

2.0 8

1.8
Power (W)

6
VGS(th) (V)

ID = 250 µA

1.6 4

1.4 2 TA = 25 °C

1.2 0
- 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000

TJ - Temperature (°C) Time (s)

Threshold Voltage Single Pulse Power (Junction-to-Ambient)

100

Limited by RDS(on)*

10
I D - Drain Current (A)

100 µs

1 1 ms

10 ms

0.1 TA = 25 °C 100 ms
Single Pulse
1 s, 10 s
DC
BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient

www.vishay.com Document Number: 65474

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 Si2343CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8

I D - Drain Current (A)

Package Limited

0
0 25 50 75 100 125 150

TC - Case Temperature (°C)

Current Derating*

2.5 1.0

2.0 0.8
Power (W)

1.5 0.6
Power (W)

1.0 0.4

0.5 0.2

0.0 0.0
0 25 50 75 100 125 150 0 25 50 75 100 125 150

TC - Case Temperature (°C) TA - Ambient Temperature (°C)

Power, Junction-to-Foot Power, Junction-to-Ambient

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.

Document Number: 65474 www.vishay.com

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Si2343CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Duty Cycle = 0.5

Normalized Effective Transient
Thermal Impedance

0.2

0.1 Notes:
0.1
PDM
0.05

t1
0.02 t2
t1
1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 166 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65474.

www.vishay.com Document Number: 65474

6 S09-2270-Rev. A, 02-Nov-09
 Legal Disclaimer Notice
Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
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The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Document Number: 91000 www.vishay.com

Revision: 18-Jul-08 1