Scribd
Upload
70 views7 pages

Transistors: Current (BJT) Voltage (FET)

The document discusses different types of transistors, including bipolar junction transistors (BJTs) and field effect transistors (FETs). It provides details on the structure and operation of BJTs, noting they have three terminals (collector, base, emitter) and current flow can be modulated between the base-emitter and base-collector junctions. FETs are described as "unipolar" since they depend on a single carrier type. MOSFETs and CMOS technology are also summarized, including the basic structure of a MOSFET and how PMOS and NMOS transistors are combined in a CMOS circuit.

Uploaded by

Qin Ling
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
70 views7 pages

Transistors: Current (BJT) Voltage (FET)

The document discusses different types of transistors, including bipolar junction transistors (BJTs) and field effect transistors (FETs). It provides details on the structure and operation of BJTs, noting they have three terminals (collector, base, emitter) and current flow can be modulated between the base-emitter and base-collector junctions. FETs are described as "unipolar" since they depend on a single carrier type. MOSFETs and CMOS technology are also summarized, including the basic structure of a MOSFET and how PMOS and NMOS transistors are combined in a CMOS circuit.

Uploaded by

Qin Ling
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 7

12/24/2020

 Transistors
 Two main categories of transistors:
 bipolar junction transistors (BJTs) and
 field effect transistors (FETs).

 Transistors have 3 terminals where the application of


current (BJT) or voltage (FET) to the input terminal
increases the amount of charge in the active region.

 In analog circuits, transistors are used in amplifiers


and linear regulated power supplies.

 In digital circuits, they function as electrical switches,


including logic gates, random access memory (RAM),
and microprocessors.

 Bardeen, Brattain and


Shockley (1947)
 made of germanium
 Transistors
 Bipolar Junction Transistors (BJT) was
invented early in 1948, only weeks after the
point contact transistor. It did not become
practical until the early 1950s. The term
“bipolar” was tagged onto the name to
distinguish the fact that both carrier types play
important roles in the operation.

 Field Effect Transistors (FETs) are “unipolar”


transistors since their operation depends
primarily on a single carrier type.

1
12/24/2020

Topics Contents
 Introduction
 Bipolar Technology
 MOSFET Technology
 MESFET Technology

 BJTs
 A bipolar transistor is a two-junction, three-layer
device.
 The three layers are called
(i) Collector, (ii) Base and (iii) Emitter
 The current flow properties of one p-n junction can be
modulated by interaction with another nearby p-n
junction.
 Two kinds of BJT
(i) NPN and (ii) PNP

2
12/24/2020

 BJTs (discrete devices)

 BJTs (planar integrated form)

Collector

Base

Isolation Emitter Isolation

 TheE-B diode is closer to the surface than the B-


C junction because it is easier make the heavier
doping at the top.

3
12/24/2020

Variation in dopants concentration

Concentration P-type N-type


lightly doped p- n-
very lightly doped p-- n--
heavily doped p+ n+
very heavily doped p++ n++

Configuration of BJT in actual devices


 Conventionally, the BJTs need only three layers to
function as an NPN transistor.

 Emitter layer: heavily doped to achieve high emitter


efficiency and good current gain

 Collector layer: heavily doped to achieve low


resistance and hence reduce unnecessary power
dissipation
Problem:
When the base width is small and if the collector is
heavily doped, the collector-base depletion layer
may reach through into the emitter region

4
12/24/2020

Configuration of BJT in actual devices


 Solution: structure configuration of N+PNN+

 The collector region is lightly doped so that the depletion layer


spreads more into the collector region rather than to the base
junction, to provide the space charge required for supporting the
reverse bias voltage on the collection junction.

 The doping level and the thickness of the N- collector region decides
the breakdown voltage of the collector-base junction.

MOSFET
 Dominant device in ULSI

 Can be scaled to smaller dimensions than other types


of devices

 CMOS technology is the dominant one (NMOS +


PMOS on the same chip)  it has the lowest power
consumption of all IC technology.

 Only lateral oxide isolation is needed (no need for


vertical isolation)

 Easier process.

5
12/24/2020

Structure of a MOSFET

 MOSFET consists of a metal gate on an oxide layer (Gate


oxide), controlling the conductivity of the channel region
between the two heavily doped source and drain regions.

 gate length (LG) > channel length (L)

Top view of the MOSFET


Contact
Gate
Active device
area

Source Drain

6
12/24/2020

CMOS TECHNOLOGY: PMOS + NMOS


VDD
VSS Vin

Top view of Transistor s g d s g d

Vout

p-channel n-channel
polysilicon gate transistor metal transistor

Cross-section of
Transistor field oxide
p+ p+ n+ n+
source drain source drain
(p-well CMOS) p-well
n-substrate

gate oxide

VSS VDD
Vin g
Schematic Diagram g

s d s d
Vout

COMS dominates because


1. CMOS is easy to fabricate on Si. Silicon is
cheaper as compared to other materials
2. physics of CMOS is easier to understand
3. CMOS is easier to implement/fabricate
4. CMOS provides lower power-delay product
5. Lowest power consumption
6. can get more CMOS transistors/functions in
same chip area

You might also like

pFad - Phonifier reborn

Pfad - The Proxy pFad of © 2024 Garber Painting. All rights reserved.

Note: This service is not intended for secure transactions such as banking, social media, email, or purchasing. Use at your own risk. We assume no liability whatsoever for broken pages.


Alternative Proxies:

Alternative Proxy

pFad Proxy

pFad v3 Proxy

pFad v4 Proxy