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Isc N-Channel MOSFET Transistor 2SK638: Features

This document provides information on the 2SK638 N-channel MOSFET transistor from ISC Semiconductor. Key specifications include a continuous drain current of 3A, a drain-source voltage of 800V, and a drain-source on-resistance of less than 5 ohms. The transistor is designed for high-voltage, high-speed power switching applications such as switching regulators and converters.

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99 views2 pages

Isc N-Channel MOSFET Transistor 2SK638: Features

This document provides information on the 2SK638 N-channel MOSFET transistor from ISC Semiconductor. Key specifications include a continuous drain current of 3A, a drain-source voltage of 800V, and a drain-source on-resistance of less than 5 ohms. The transistor is designed for high-voltage, high-speed power switching applications such as switching regulators and converters.

Uploaded by

Wall Pereira
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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isc N-Channel MOSFET Transistor 2SK638

FEATURES
·Drain Current –ID=3A@ TC=25℃
·Drain Source Voltage-
: VDSS= 800V(Min)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

DESCRIPTION
·Designed for high voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and relay drivers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


SYMBOL PARAMETER VALUE UNIT

VDSS Drain-Source Voltage 800 V

VGS Gate-Source Voltage-Continuous ±20 V

ID Drain Current-Continuous 3 A

PD Total Dissipation @TC=25℃ 80 W

TJ Max. Operating Junction Temperature 150 ℃

Tstg Storage Temperature -55~150 ℃

THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance, Junction to Case 1.25 ℃/W

Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W

isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark


isc N-Channel MOSFET Transistor 2SK638

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBO
PARAMETER CONDITIONS MIN TYP MAX UNIT
L

V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 800 V

VGS(th) Gate Threshold Voltage VDS= VGS; ID= 1mA 1.0 5.0 V

RDS(on) Drain-Source On-Resistance VGS= 15V; ID= 3A 5.0 Ω

IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA

IDSS Zero Gate Voltage Drain Current VDS= 800V; VGS=0 250 μA

NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.

isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark

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