SMD Type MOSFET

P-Channel MOSFET
AO3407A (KO3407A)

SOT-23-3 Unit: mm
2.9 -0.1
+0.2

0.4 -0.1
+0.1

0.4
3
■ Features
● VDS (V) =-30V

+0.2
2.8 -0.1

+0.2
1.6 -0.1
● ID =-4.3 A (VGS =-10V)

0.55
1 2
● RDS(ON) ＜ 48mΩ (VGS =-10V)
0.95 -0.1
+0.1
0.15 -0.02
+0.02

● RDS(ON) ＜ 78mΩ (VGS =-4.5V) 1.9 -0.2

+0.1

+0.2
1.1 -0.1
1. Gate
2. Source

+0.1
0.68 -0.1
0-0.1
3. Drain
D

■ Absolute Maximum Ratings Ta = 25℃

Parameter Symbol Rating Unit
Drain-Source Voltage VDS -30
V
Gate-Source Voltage VGS ±20
TA=25°C -4.3
Continuous Drain Current ID
TA=70°C -3.5 A
Pulsed Drain Current IDM -25
TA=25°C 1.4
Power Dissipation PD W
TA=70°C 0.9
t ≤ 10s 90
Thermal Resistance.Junction- to-Ambient RthJA
Steady-State 125 ℃/W
Thermal Resistance.Junction- to-Lead RthJL 80
Junction Temperature TJ 150
℃
Junction Storage Temperature Range Tstg -55 to 150

1
www.kexin.com.cn
 SMD Type MOSFET

P-Channel MOSFET
AO3407A (KO3407A)
■ Electrical Characteristics Ta = 25℃
Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -30 V
VDS=-30V, VGS=0V -1
Zero Gate Voltage Drain Current IDSS uA
VDS=-30V, VGS=0V, TJ=55℃ -5
Gate-Body leakage current IGSS VDS=0V, VGS=±20V ±100 nA
Gate Threshold Voltage VGS(th) VDS=VGS ID=-250μA -1.4 -2.4 V
VGS=-10V, ID=-4.3A 48
Static Drain-Source On-Resistance RDS(On) VGS=-10V, ID=-4.3A TJ=125℃ 68 mΩ
VGS=-4.5V, ID=-3A 78
On state drain current ID(ON) VGS=-10V, VDS=-5V -25 A
Forward Transconductance gFS VDS=-5V, ID=-4.3A 10 S
Input Capacitance Ciss 520
Output Capacitance Coss VGS=0V, VDS=-15V, f=1MHz 100 pF
Reverse Transfer Capacitance Crss 65
Gate resistance Rg VGS=0V, VDS=0V, f=1MHz 3.5 11.5 Ω
Total Gate Charge (10V) 9.2 11
Qg
Total Gate Charge (4.5V) 4.6 6
VGS=-10V, VDS=-15V, ID=-4.3A nC
Gate Source Charge Qgs 1.6
Gate Drain Charge Qgd 2.2
Turn-On DelayTime td(on) 7.5
Turn-On Rise Time tr VGS=-10V, VDS=-15V, RL=3.5Ω, 5.5
Turn-Off DelayTime td(off) RGEN=3Ω 19 ns
Turn-Off Fall Time tf 7
Body Diode Reverse Recovery Time trr 11
IF=-4.3A, dI/dt=100A/μs
Body Diode Reverse Recovery Charge Qrr 5.3 nC
Maximum Body-Diode Continuous Current IS -2 A
Diode Forward Voltage VSD IS=-1A,VGS=0V -1 V

* The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.

■ Marking
Marking X7**

2
www.kexin.com.cn
 SMD Type MOSFET

P-Channel MOSFET
AO3407A (KO3407A)
■ Typical Characterisitics
30 30

-6V VDS=-5V
25 25
-10V
-4.5V
20 20
-ID (A)

-ID(A)
15 15
-4V
10 10
125°C
25°C
5 VGS=-3.5V 5

0 0
0 1 2 3 4 5 0.5 1.5 2.5 3.5 4.5 5.5
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

80 1.8

70
Normalized On-Resistance

1.6 VGS=-10V
60 VGS=-4.5V ID=-4.3A
Ω)
RDS(ON) (mΩ

50 1.4

40
1.2
30
VGS=-4.5V
VGS=-10V 1 ID=-3A
20

10 0.8
0 2 4 6 8 10 0 25 50 75 100 125 150 175
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C)
Voltage (Note E) Figure 4: On-Resistance vs. Junction Temperature
(Note E)

120 1.0E+02
ID=-4.3A
1.0E+01
100
1.0E+00
125°C
80
Ω)
RDS(ON) (mΩ

1.0E-01
-IS (A)

125°C
1.0E-02
60 25°C
1.0E-03
40
25°C 1.0E-04

20 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

3
www.kexin.com.cn
 SMD Type MOSFET

P-Channel MOSFET
AO3407A (KO3407A)
■ Typical Characterisitics

10 800
VDS=-15V
ID=-4.3A
8
600 Ciss

Capacitance (pF)
-VGS (Volts)

6
400
4
Coss
200
2

Crss
0 0
0 2 4 6 8 10 0 5 10 15 20 25 30
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 40
TA=25°C
10µs
10.0 30
RDS(ON)
limited 100µs
Power (W)
ID (Amps)

1.0 1ms 20
10ms
10ms

0.1 10
TJ(Max)=150°C 10s
TA=25°C DC
0.0 0
.
0.01 0.1 1 10 100 0.0001 0.01 1 100
VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Ambient (Note F)
Operating Area (Note F)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient
Thermal Resistance

1 RθJA=125°C/W

0.1

PD
PD
0.01
Single Pulse Ton
Ton T
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

4
www.kexin.com.cn