VS-30TPS16-M3

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Thyristor High Voltage, Phase Control SCR, 30 A
FEATURES
2
(A) • High voltage (up to 1600 V)
• Designed and qualified according to
JEDEC®-JESD 47
1
• 125 °C max. operating junction temperature
2 Available
3 • Material categorization:
1 (K) (G) 3
for definitions of compliance please see
TO-247AC 3L www.vishay.com/doc?99912

APPLICATIONS
PRIMARY CHARACTERISTICS • Typical usage is in input rectification crowbar (soft start)
and AC switch in motor control, UPS, welding and battery
IT(AV) 20 A
charge
VDRM/VRRM 1600 V
VTM 1.3 V DESCRIPTION
IGT 45 mA
The VS-30TPS16... high voltage series of silicon controlled
TJ -40 °C to +125 °C rectifiers are specifically designed for medium power
Package TO-247AC 3L switching and phase control applications. The glass
Circuit configuration Single SCR passivation technology used has reliable operation up to
125 °C junction temperature.

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV) Sinusoidal waveform 20
A
IRMS 30
VRRM/VDRM 1600 V
ITSM 300 A
VT 20 A, TJ = 25 °C 1.3 V
dV/dt 500 V/μs
dI/dt 150 A/μs
TJ -40 to +125 °C

VOLTAGE RATINGS
VRRM/VDRM, MAXIMUM VRSM, MAXIMUM
IRRM/IDRM
REPETITIVE PEAK AND NON-REPETITIVE PEAK
PART NUMBER AT 125 °C
OFF-STATE VOLTAGE REVERSE VOLTAGE
mA
V V
VS-30TPS16-M3 1600 1700 10

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ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current IT(AV) TC = 95 °C, 180° conduction half sine wave 20
Maximum RMS on-state current IRMS 30
A
Maximum peak, one-cycle,  10 ms sine pulse, rated VRRM applied 250
ITSM
non-repetitive surge current 10 ms sine pulse, no voltage reapplied 300
10 ms sine pulse, rated VRRM applied 310
Maximum I2t for fusing I2t A2s
10 ms sine pulse, no voltage reapplied 442
Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 4420 A2s
Maximum on-state voltage drop VTM 20 A, TJ = 25 °C 1.3 V
On-state slope resistance rt 12 m
TJ = 125 °C
Threshold voltage VT(TO) 1.0 V

Maximum reverse and direct leakage TJ = 25 °C 0.5

IRM/IDM VR = rated VRRM/VDRM
current TJ = 125 °C 10
mA
Maximum holding current IH Anode supply = 6 V, resistive load, initial IT = 1 A, TJ = 25 °C 150
Maximum latching current IL Anode supply = 6 V, resistive load, TJ = 25 °C 200
Maximum rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM, Rg - k = open 500 V/μs
Maximum rate of rise of turned-on current dI/dt 150 A/μs

TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM 8.0
W
Maximum average gate power PG(AV) 2.0
Maximum peak positive gate current + IGM 1.5 A
Maximum peak negative gate voltage - VGM 10 V
Anode supply = 6 V, resistive load, TJ = -10 °C 60
Maximum required DC gate current to
IGT Anode supply = 6 V, resistive load, TJ = 25 °C 45 mA
trigger
Anode supply = 6 V, resistive load, TJ = 125 °C 20
Anode supply = 6 V, resistive load, TJ = -10 °C 2.5
Maximum required DC gate 
VGT Anode supply = 6 V, resistive load, TJ = 25 °C 2.0
voltage to trigger V
Anode supply = 6 V, resistive load, TJ = 125 °C 1.0
Maximum DC gate voltage not to trigger VGD 0.25
TJ = 125 °C, VDRM = rated value
Maximum DC gate current not to trigger IGD 2.0 mA

SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical turn-on time tgt TJ = 25 °C 0.9
Typical reverse recovery time trr 4 μs
TJ = 125 °C
Typical turn-off time tq 110

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THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
TJ, TStg -40 to 125 °C
temperature range
Maximum thermal resistance, 
RthJC 0.8
junction to case
DC operation
Maximum thermal resistance, 
RthJA 40 °C/W
junction to ambient
Maximum thermal resistance, 
RthCS Mounting surface, smooth and greased 0.2
case to heatsink
6 g
Approximate weight
0.21 oz.
minimum 6 (5) kgf · cm
Mounting torque
maximum 12 (10) (lbf · in)

Marking device Case style TO-247AC 3L 30TPS16

130 60
Maximum Allowable Case Temperature (°C)

Maximum Average On-state Power Loss (W)

30TPS.. Series 180°
R thJC (DC) = 0.8 °C/ W 120°
50 90°
120 60°
30°
40
Conduction Angle RMS Limit

110 30

30°
60° 20
90° Conduction Angle
100 120°
180° 30TPS.. Series
10
TJ= 125°C

90 0
0 5 10 15 20 25 0 5 10 15 20 25 30
Average On-state Current (A) Average On-state Current (A)

Fig. 1 - Current Rating Characteristics Fig. 3 - On-State Power Loss Characteristics

130 80
Maximum Average On-state Power Loss (W)
Maximum Allow able Case Temperature (°C)

30TPS.. Series DC
RthJC (DC) = 0.8 °C/ W 180°
120°
120
60 90°
60°
30°
110 Conduction Period
40 RMSLimit
100
Conduction Period
30° 20
60°
90 90° 30TPS.. Series
120° TJ = 125°C
180° DC
80 0
0 5 10 15 20 25 30 35 0 10 20 30 40 50

Average On-state Current (A) Average On-state Current (A)

Fig. 2 - Current Rating Characteristics Fig. 4 - On-State Power Loss Characteristics

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280 300
Peak Half Sine Wave On-state Current (A)

Peak Half Sine Wave On-state Current (A)

At Any Rated Load Condition And With Maximum Non Repetitive Surge Current
Rated V RRM Applied Following Surge. 280 Versus Pulse Tra in Duration. Control
260
Initial TJ = 125°C Of Conduc tion May Not Be Maintained.
@60 Hz 0.0083 s 260 Initial TJ= 125°C
240
@50 Hz 0.0100 s No Voltage Reap plied
240 Rated VRRMReapplied
220
220
200
200
180
180
160 160
140 30TPS.. Series 140 30TPS.. Series

120 120
1 10 100 0.01 0.1 1
Numb er Of Equa l Amplitude Half Cyc le Current Pulses (N) Pulse Train Duration (s)

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

1000
Instantaneous On-state Current (A)

TJ= 25°C

TJ= 125°C
100

10

30TPS.. Series
1
0 1 2 3 4 5 6 7
Instantaneous On-state Voltage (V)

Fig. 7 - On-State Voltage Drop Characteristics

Transient Thermal Impedance Z thJC (°C/ W)

D = 0.50 Steady State Value

D = 0.33 (DC Operation)
D = 0.25
D = 0.17
0.1 D = 0.08

Single Pulse

30TPS.. Series

0.01
0.0001 0.001 0.01 0.1 1
Square Wave Pulse Duration (s)

Fig. 8 - Thermal Impedance ZthJC Characteristics

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100
Rec tangular gate pulse (1) PGM = 40 W, tp = 1 ms
a)Rec ommended load line for
(2) PGM = 20 W, tp = 2 ms

Instantaneous Gate Voltage (V)

rated di/ dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
(3) PGM = 8 W, tp = 5 ms
b)Recommended load line for (4) PGM = 4 W, tp = 10 ms
<= 30% rated di/ dt: 10 V, 65 ohms
10 tr = 1 µs, tp >= 6 µs
(a)
(b)

TJ = -10 °C
TJ = 25 °C
TJ = 125 °C
1
(4) (3) (2) (1)
VGD

IGD
30TPS.. Series Frequenc y Limited by PG(AV)
0.1
0.001 0.01 0.1 1 10 100
Instantaneous Gate Current (A)

Fig. 9 - Gate Characteristics

ORDERING INFORMATION TABLE

Device code VS- 30 T P S 16 -M3

1 2 3 4 5 6 7

1 - Vishay Semiconductors product

2 - Current rating (30 = 30 A)
3 - Circuit configuration:
T = thyristor
4 - Package:
P = TO-247AC 3L
5 - Type of silicon:
S = standard recovery rectifier
6 - Voltage rating (16 = 1600 V)
7 - Environmental digit:
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free

ORDERING INFORMATION (Example)

PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-30TPS16-M3 25 500 Antistatic plastic tubes

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?96138
Part marking information www.vishay.com/doc?95007

Revision: 26-Feb-2019 5 Document Number: 94387

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 Outline Dimensions
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Vishay Semiconductors
TO-247AC 3L
DIMENSIONS in millimeters and inches

A A (Datum B)
B E (3) Ø P (6)
S A2 Ø P1
R/2 (2) Ø K M DBM
A
Q
D2
2 x R (2) D1 (4)
D
Thermal pad
2 D 4
1 3

L1 (5)

C L

See view B A

2 x b2 C
2x e
3xb
b4 A1
0.10 M C A M E1 (4)
0.01 M D B M
(b1, b3, b5) View A - A
Plating Base metal
D DE E

(c) c1 C C

(b, b2, b4)

(4)

Section C - C, D - D, E - E View B

MILLIMETERS INCHES MILLIMETERS INCHES

SYMBOL NOTES SYMBOL NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.65 5.31 0.183 0.209 D2 0.51 1.35 0.020 0.053
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3
A2 1.17 1.37 0.046 0.054 E1 13.46 - 0.53 -
b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC
b1 0.99 1.35 0.039 0.053 ØK 0.254 0.010
b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634
b3 1.65 2.34 0.065 0.092 L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135 ØP 3.56 3.66 0.14 0.144
b5 2.59 3.38 0.102 0.133 Ø P1 - 7.39 - 0.291
c 0.38 0.89 0.015 0.035 Q 5.31 5.69 0.209 0.224
c1 0.38 0.84 0.015 0.033 R 4.52 5.49 0.178 0.216
D 19.71 20.70 0.776 0.815 3 S 5.51 BSC 0.217 BSC
D1 13.08 - 0.515 - 4
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension Q

Revision: 20-Jun-17 1 Document Number: 96138

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