9014

NPN Silicon Epitaxial Planar Transistor

for switching and AF amplifier applications.

The transistor is subdivided into four groups, A, B, C

and D, according to its DC current gain. As
complementary type the PNP transistor ST 9015 is
recommended.

On special request, these transistors can be

manufactured in different pin configurations.

TO-92 Plastic Package

Weight approx. 0.19g

Absolute Maximum Ratings (Ta = 25℃)

Symbol Value Unit

Collector Base Voltage VCBO 50 V
Collector Emitter Voltage VCEO 45 V
Emitter Base Voltage VEBO 5 V
Collector Current IC 100 mA
Power Dissipation Ptot 450 mW
O
Junction Temperature Tj 150 C
O
Storage Temperature Range TS -55 to +150 C
9014

Characteristics at Tamb=25 OC

Symbol Min. Typ. Max. Unit

DC Current Gain
at VCE=5V, IC=1mA
Current Gain Group A hFE 60 - 150 -
B hFE 100 - 300 -
C hFE 200 - 600 -
D hFE 400 - 1000 -
Collector Base Breakdown Voltage
at IC=100μA V(BR)CBO 50 - - V
Collector Emitter Breakdown Voltage
at IC=1mA V(BR)CEO 45 - - V
Emitter Base Breakdown Voltage
at IE=100μA V(BR)EBO 5 - - V
Collector Cutoff Current
at VCB=50V ICBO - - 50 nA
Emitter Cutoff Current
at VEB=5V IEBO - - 50 nA
Collector Saturation Voltage
at IC=100mA,IB=5mA VCE(sat) - 200 600 mV
Base Saturation Voltage
at IC=100mA,IB=5mA VBE(sat) - 900 - mV
Gain Bandwidth Product
at VCE=5V,IC=10mA fT - 300 - MHz
Output Capacitance
at VCB=10V,f=1MHz COB - 3.5 6 Pf
Noise Figure
at VCE=5V,IC=200μA
at f=1KHz,RG=2KΩ NF - 2 10 dB
9014

Admissible power dissipation Collector current

versus temperature versus base emitter voltage
Valid provided that leads are kept at
ambient temperature
at a distance of 2 mm from case
mW ST 9014 mA ST 9014
500 2
10
VCE=5V
5
4
3
400
2

10
P tot 300 IC Tamb=100 o C o
5 25 C
4
-50o C
3

2
200
1

5
100 4
3

0 10 -1
0 200 C o 0 0.5 1V
100
Tamb VBE

Pulse thermal resistance Gain bandwidth product

versus pulse duration versus collector current
Valid provided that leads are kept at
ambient temperature
at a distance of 2 mm from case

K/W ST 9014 MHz ST 9014

3
10 10 3
o
5 7 Tamb=25 C

2 5
4 VCE=10V
0.2
10 2 3
0.1 5V
5
0.05 2
r thA fT 2V
2
0.02
10 10 2
0.01
5 7
0.005 5
2
4
1 tp 3
v=0
5 tp
v= PI
T 2
2
T
10 -1
10 2 S 10
10 -6 10 -4 10 -2 1 0.1 2 5 1 2 5 10 2 5 100 mA
tp IC
9014

Collector saturation voltage DC current gain

versus collector current versus collector current

V ST 9014 ST 9014
0.5 3
10
I C/I B =20 VCE=5V
5
4 o
3 100 C
0.4
2
o
25 C
T am b=
2
10
VCEsat 0.3 h FE -50 o C
5
4
3

0.2 2

Tamb=100oC 10

0.1 5
o
25 C 4
3
o 2
-50 C
0
1
10 -1 2 5 1 2 5 10 2 5 102 mA 10 -2 10-1 1 10 10 2 mA
IC IC

Noise figure Common emitter

versus collector current collector characteristics

dB ST 9014 ST 9014
dB
20 20
VCE=5V I C=0.2mA
f=1KHz R G =2K
18 Tamb=25o C 18 f=1KHz
100K f=200Hz
16 16 Tamb=25o C

14 500 14
F F
10K
12 R G =1M
12
10 10
1K
8 8
6 6
500
4 4
2 2
0 0
10 -3 10 -2 10 -1 1 10 mA 10 -1 2 5 1 2 5 10 2 5 102 V
IC VCE
9014

Collector cutoff current Collector base capacitance,

versus ambient temperature Emitter base capacitance
verses reverse bias voltage

mA ST 9014 mA ST 9014
4 10
10

3 8
10

CCBO CEBO
2 6
I CBO 10 CEBO

CCBO
10 4

1 Test voltage VCBO:

2
equal to the given
maximum value VCES
typical
Tamb=25 oC
10 -1 maximum
0
0 100 200 oC 0.1 0.2 0.5 1 2 5 10V

Tamb VCBO,VEBO

Relative h-parameters Noise figure

versus collector current versus collector current

dB ST 9014
ST 9014
2 20
10 VCE=5V
6 f=1KHz
18 Tamb=25 oC
4
16 R G =1M 100K 10K 1K
2
h ie F 14
500
10
12
6
h re 500
4 10

2 8

1 6
h fe
6
4
4 1K
h oe
2
2
VCE=5V
o 0
10 -1 Tamb=25 C
10 -3 10 -2 10 -1 1 10 mA
10 -1 2 4 1 2 4 10mA
IC
IC