K817P/ K827PH/ K847PH

Vishay Semiconductors

Optocoupler with Phototransistor Output

Description
The K817P/ K827PH/ K847PH consist of a photo-
transistor optically coupled to a gallium arsenide
infrared-emitting diode in an 4-lead up to 16 lead
plastic dual inline package.
The elements are mounted on one leadframe using a
coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.

Applications
Programmable logic controllers, modems, answering
machines, general applications

Features 14925

Endstackable to 2.54 mm (0.1”) spacing

Coll. Emitter

DC isolation test voltage VIO = 5 kV

Low coupling capacitance of typical 0.3 pF

Current Transfer Ratio (CTR) selected into groups

Low temperature coefficient of CTR

13929

Wide ambient temperature range
1

Underwriters Laboratory (UL) 1577 recognized,
file number E-76222 Anode Cath.
4 PIN

CSA (C-UL) 1577 recognized,
file number E- 76222 - Double Protection 8 PIN

Coupling System U 16 PIN

Order Instruction
Ordering Code CTR Ranking Remarks
K817P 50 to 600% 4 Pin = Single channel
K827PH 50 to 600% 8 Pin = Dual channel
K847PH 50 to 600% 16 Pin = Quad channel
K817P1 40 to 80% 4 Pin = Single channel
K817P2 63 to 125% 4 Pin = Single channel
K817P3 100 to 200% 4 Pin = Single channel
K817P4 160 to 320% 4 Pin = Single channel
K817P5 50 to 150% 4 Pin = Single channel
K817P6 100 to 300% 4 Pin = Single channel
K817P7 80 to 160% 4 Pin = Single channel
K817P8 130 to 260% 4 Pin = Single channel
K817P9 200 to 400% 4 Pin = Single channel

Document Number 83522 www.vishay.com

Rev. A3, 04–Sep–01 1 (9)
K817P/ K827PH/ K847PH
Vishay Semiconductors
Absolute Maximum Ratings
Input (Emitter)
Parameter Test Conditions Symbol Value Unit
Reverse voltage VR 6 V
Forward current IF 60 mA
Forward surge current tp
10 µs IFSM 1.5 A
Power dissipation Tamb
25°C PV 100 mW
Junction temperature Tj 125 °C

Output (Detector)
Parameter Test Conditions Symbol Value Unit
Collector emitter voltage VCEO 70 V
Emitter collector voltage VECO 7 V
Collector current IC 50 mA
Peak collector current tp/T = 0.5, tp
10 ms ICM 100 mA
Power dissipation Tamb
25°C PV 150 mW
Junction temperature Tj 125 °C

Coupler
Parameter Test Conditions Symbol Value Unit
AC isolation test voltage (RMS) t = 1 min VIO 1) 5 kV
Total power dissipation Tamb
25°C Ptot 250 mW
Operating ambient temperature Tamb –40 to +100 °C
range
Storage temperature range Tstg –55 to +125 °C
Soldering temperature 2 mm from case, t
10 s Tsd 260 °C
1) Related to standard climate 23/50 DIN 50014

www.vishay.com Document Number 83522

2 (9) Rev. A3, 04–Sep–01
 K817P/ K827PH/ K847PH
Vishay Semiconductors
Electrical Characteristics (Tamb = 25°C)
Input (Emitter)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage IF = 50 mA VF 1.25 1.6 V
Junction capacitance VR = 0 V, f = 1 MHz Cj 50 pF

Output (Detector)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter voltage IC = 100 µA VCEO 70 V
Emitter collector voltage IE = 100 µA VECO 7 V
Collector dark current VCE = 20 V, IF = 0, E = 0 ICEO 100 nA

Coupler
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter IF = 10 mA, IC = 1 mA VCEsat 0.3 V
saturation voltage
Cut-off frequency IF = 10 mA, VCE = 5 V, fc 100 kHz
RL = 100 Ω
Coupling capacitance f = 1 MHz Ck 0.3 pF

Current Transfer Ratio (CTR)

Parameter Test Conditions Type Symbol Min. Typ. Max. Unit
IC/IF VCE = 5 V, IF = 5 mA K817P CTR 0.5 6.0
VCE = 5 V, IF = 5 mA K827PH CTR 0.5 6.0
VCE = 5 V, IF = 5 mA K847PH CTR 0.5 6.0
VCE = 5 V, IF = 10 mA K817P1 CTR 0.4 0.8
VCE = 5 V, IF = 10 mA K817P2 CTR 0.63 1.25
VCE = 5 V, IF = 10 mA K817P3 CTR 1.0 2.0
VCE = 5 V, IF = 10 mA K817P4 CTR 1.6 3.2
VCE = 5 V, IF = 5 mA K817P5 CTR 0.5 1.5
VCE = 5 V, IF = 5 mA K817P6 CTR 1.0 3.0
VCE = 5 V, IF = 5 mA K817P7 CTR 0.8 1.6
VCE = 5 V, IF = 5 mA K817P8 CTR 1.3 2.6
VCE = 5 V, IF = 5 mA K817P9 CTR 2.0 4.0

Document Number 83522 www.vishay.com

Rev. A3, 04–Sep–01 3 (9)
K817P/ K827PH/ K847PH
Vishay Semiconductors
Switching Characteristics
Parameter Test Conditions Symbol Typ. Unit
Delay time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) td 3.0 µs
Rise time tr 3.0 µs
Fall time tf 4.7 µs
Storage time ts 0.3 µs
Turn-on time ton 6.0 µs
Turn-off time toff 5.0 µs
Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kΩ (see figure 2) ton 9.0 µs
Turn-off time toff 18.0 µs

IF IF +5V 96 11698
0 IF
IC = 2 mA; adjusted through
input amplitude
0
RG = 50
t
tp tp
= 0.01
T
IC
tp = 50 s
Channel I
Oscilloscope 100%
90%
Channel II RL = 1 M

50
100
CL = 20 pF
95 10804

Figure 1. Test circuit, non-saturated operation 10%

0
t
tr

td ts tf
IF IF = 10 mA +5V
0
IC ton toff
RG = 50
tp pulse duration ts storage time
tp td delay time tf fall time
= 0.01
T tr rise time toff (= ts + tf) turn-off time
tp = 50 s ton (= td + tr) turn-on time

Channel I Figure 3. Switching times

Oscilloscope
Channel II RL > 1 M

50
1 k
CL < 20 pF
95 10843

Figure 2. Test circuit, saturated operation

www.vishay.com Document Number 83522

4 (9) Rev. A3, 04–Sep–01
 K817P/ K827PH/ K847PH
Vishay Semiconductors
Typical Characteristics (Tamb = 25C, unless otherwise specified)
300 10000
Coupled device
P tot – Total Power Dissipation ( mW )

VCE=20V

ICEO– Collector Dark Current,

250 IF=0
1000

with open Base ( nA )

200
Phototransistor
150 100
IR-diode
100
10
50

0 1
0 40 80 120 0 25 50 75 100
96 11700 Tamb – Ambient Temperature ( °C ) 95 11026 Tamb – Ambient Temperature ( °C )
Figure 4. Total Power Dissipation vs. Figure 7. Collector Dark Current vs. Ambient Temperature
Ambient Temperature

1000.0 100
VCE=5V
IC – Collector Current ( mA )
I F – Forward Current ( mA )

100.0 10

10.0 1

1.0 0.1

0.1 0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1 10 100
96 11862 VF – Forward Voltage ( V ) 95 11027 IF – Forward Current ( mA )
Figure 5. Forward Current vs. Forward Voltage Figure 8. Collector Current vs. Forward Current

2.0 100
CTR rel – Relative Current Transfer Ratio

VCE=5V 20mA
IC – Collector Current ( mA )

IF=5mA IF=50mA
1.5
10mA
10

5mA
1.0

1 2mA
0.5
1mA

0 0.1
–25 0 25 50 75 0.1 1 10 100
95 11025 Tamb – Ambient Temperature ( °C ) 95 10985 VCE – Collector Emitter Voltage ( V )
Figure 6. Relative Current Transfer Ratio vs. Figure 9. Collector Current vs. Collector Emitter Voltage
Ambient Temperature

Document Number 83522 www.vishay.com

Rev. A3, 04–Sep–01 5 (9)
K817P/ K827PH/ K847PH
Vishay Semiconductors
VCEsat – Collector Emitter Saturation Voltage ( V )

1.0 50

ton / t off – Turn on / Turn off Time (  s )

20% Saturated Operation
0.8 40 VS=5V
RL=1k

CTR=50%
0.6 30
toff
0.4 20

0.2 10
10%
ton
0 0
1 10 100 0 5 10 15 20
95 11028 IC – Collector Current ( mA ) 95 11031 IF – Forward Current ( mA )
Figure 10. Collector Emitter Saturation Voltage vs.
Figure 12. Turn on / off Time vs. Forward Current
Collector Current

1000 ton / t off – Turn on / Turn off Time (  s ) 10

Non Saturated
CTR – Current Transfer Ratio ( % )

Operation
VCE=5V 8 VS=5V
ton RL=100

100
6
toff
4
10

1 0
0.1 1 10 100 0 2 4 6 10

95 11029 IF – Forward Current ( mA ) 95 11030 IC – Collector Current ( mA )

Figure 11. Current Transfer Ratio vs. Forward Current Figure 13. Turn on / off Time vs. Collector Current

Pin 1 Indication Type

K817P
820UTK63
15080

Date Coupling Company Production

Code System Logo Location
(YM) Indicator

Figure 14. Marking example

www.vishay.com Document Number 83522

6 (9) Rev. A3, 04–Sep–01
 K817P/ K827PH/ K847PH
Vishay Semiconductors
Dimensions of K817P. in mm

14789

Dimensions of K827PH in mm

14784

Document Number 83522 www.vishay.com

Rev. A3, 04–Sep–01 7 (9)
K817P/ K827PH/ K847PH
Vishay Semiconductors
Dimensions of K847PH in mm

14783

www.vishay.com Document Number 83522

8 (9) Rev. A3, 04–Sep–01
 K817P/ K827PH/ K847PH
Vishay Semiconductors
Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their
use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs
listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances
and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

Document Number 83522 www.vishay.com

Rev. A3, 04–Sep–01 9 (9)
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