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Isc Triacs TIC216M: Features

This document provides information on the TIC216M triac made by isc Triacs. It lists the features of the device including its TO-220 package, sensitive gate, glass passivation, and maximum ratings. The document then provides the electrical characteristics of the triac such as its repetitive peak off-state current, gate trigger current and voltage, and on-state voltage. It concludes with notices that ISC reserves the right to change information and does not guarantee suitability for special applications.

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0% found this document useful (0 votes)
40 views2 pages

Isc Triacs TIC216M: Features

This document provides information on the TIC216M triac made by isc Triacs. It lists the features of the device including its TO-220 package, sensitive gate, glass passivation, and maximum ratings. The document then provides the electrical characteristics of the triac such as its repetitive peak off-state current, gate trigger current and voltage, and on-state voltage. It concludes with notices that ISC reserves the right to change information and does not guarantee suitability for special applications.

Uploaded by

mok wane
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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isc Triacs TIC216M

FEATURES
·With TO-220 package
·Sensitive Gate Triacs
·Glass Passivated
·Max IGT of 5 mA (Quadrants 1~3)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


UNIT
SYMBOL PARAMETER MIN

VDRM Repetitive peak off-state voltage 600 V

VRRM Repetitive peak reverse voltage 600 V

IT(RMS) RMS on-state current (full sine wave)TC=70℃ 6 A

ITSM Non-repetitive peak on-state current 60 A

Tj Operating junction temperature 110 ℃

Tstg Storage temperature -45~150 ℃

Rth(j-c) Thermal resistance, junction to case 2.5 ℃/W

Rth(j-a) Thermal resistance, junction to ambient 62.5 ℃/W

ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)


SYMBOL PARAMETER CONDITIONS MAX UNIT

IDRM Repetitive peak off-state current VD=VDRM, TC=110℃ 2.0 mA


Ⅰ 5
Ⅱ 5
IGT Gate trigger current Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs mA
Ⅲ 5
Ⅳ 10
IH Holding current Vsupply = 12 V†, IG= 0 initial ITM= 100mA 30 mA
Ⅰ 2.2
Ⅱ 2.2
VGT Gate trigger voltage Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs V
Ⅲ 2.2
Ⅳ 3.0
VTM On-state voltage IT= 8.4A; IG= 50mA 1.7 V

isc website:www.iscsemi.cn 1 isc&iscsemi is registered trademark


Notice:
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.

isc website:www.iscsemi.cn 2 isc&iscsemi is registered trademark

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