FET

(FIELD EFFECT
TRANSISTOR)
Engr. Jess Rangcasajo
jessrangcasajo@gmail.com
ECE 321 Instructor
 FET’S VS. BJT’S

Similarities:
Amplifiers
Switching Device
Impedance Matching Circuits
 DIFFERENCES

FET’s BJT’s
 Voltage controlled devices  Current controlled devices
 Higher input impedance  Lower impedance
 Less sensitive to temp.  Higher sensitive
variations  Bipolar device
 Unipolar device  Bigger IC
 Smaller/ Easily Integrated
Chips
 TYPES OF FET

1. JFET (Junction FET)

2. MESFET (metal-semiconductor FET)
3. MOSFET (metal-oxide-semiconductor FET)
a. D-MOSFET (Depletion)
b. E-MOSFET (Enhancement)
DR. IAN MUNRO ROSS
&
G.C DACEY

- Jointly developed an experimental

procedure for measuring the
characteristics of FET in 1955
JFET
(JUNCTION FET)
CONSTRUCTION AND CHARACTERISTICS OF
JFET
 Is a three-terminal device with one terminal capable
of controlling the current between the other two.

3 terminals are:

1. DRAIN (D)
2. SOURCE (S) – connected to n-channel
3. GATE (G) – connected to p-channel
 Two types of JFET
1. n-channel
2. p-channel
Drain Drain

Gate Gate

Note: Source Source

 n-channel is more widely used.

 D D

G G

S S
n-channel p-channel
•Drain (D) and Source (S) are connected to the n-channel
•Gate (G) is connected to the p-type material
JFET OPERATING
CHARACTERISTICS
JFET is always operated with the gate-
source PN junction reversed biased.

Reverse biasing of the gate source

junction with the negative voltage
produces a depletion region along the PN
junction which extends into the n-channel
and thus increases its resistance by
restricting the channel width as shown in
the preceding figure.
 𝑽𝑮𝑺 = 𝟎, 𝑽𝑫𝑺 SOME POSITIVE VALUE
When 𝐕𝐆𝐒 = 𝟎 𝐚𝐧𝐝 𝐕𝐃𝐒 is increased from 0
to a more positive voltage.

 The depletion region between p-gate

and n-channel increases

 Increasing the depletion region,

decreases the size of the n-channel
which increases the resistance of the n-
channel.

 Even though the n-channel resistance is

increasing, the current (ID) from source
to drain through the n-channel is
IG = 0 increasing. This is because VDS is
increasing.

Recall from DIODE discussion:

- The greater the applied reverse bias, the wider is the depletion region.
 REGIONS OF JFET ACTION
1. Ohmic Region – linear region
 JFET behaves like an ordinary resistor
2. Pinch Off Region
 Saturation or Amplifier Region
 JFET operates as a constant current device because Id is
relatively independent of Vds

 Idss – drain current with gate shorted to source.

3. Breakdown Region
 If Vds is increased beyond its value corresponding to Va –
avalanche breakdown voltage.
 JFET enters the breakdown region where Id increases to
an excessive value.
4. CutOff Region
 As Vgs is made more and more negative, the gate
reverse bias increases which increases the thickness of
the depletion region.
 As negative value of Vgs is increased, a stage comes
when the 2 depletion regions touch each other.

Vgs (off) = -Vp

/Vp/ = /Vgsoff/
JFET OPERATING CHARACTERISTICS: PINCH OFF
 If VGS = 0 and VDS is further
increased to a more positive
voltage, then the depletion zone
gets so large that it pinches off the
n-channel.

 As VDS is increased beyond |VP |,

the level of ID remains the same
(ID = IDSS )
 𝑽𝑮𝑺 ≥ 𝟎
 Voltage from gate to source is
controlling voltage of the JFET.

 As 𝐕𝐆𝐒 becomes more negative, the

depletion region increases.

 The more negative 𝐕𝐆𝐒 , the resulting

level for 𝐈𝐃 is reduced.

 Eventually, when 𝐕𝐆𝐒 = 𝐕𝐩 [Vp = VGS

(off)], ID is 0 mA. (the device is
“turned off”.
 JFET OPERATING CHARACTERISTICS

n-Channel JFET characteristics with IDSS = 8 mA and VP = -4 V.

JFET OPERATING CHARACTERISTICS: VOLTAGE-
CONTROLLED RESISTOR
The region to the left of the pinch-
off point is called the ohmic
region/Voltage controlled
resistance region.

The JFET can be used as a variable resistor, where VGS controls the drain-
source resistance (rd). As VGS becomes more negative, the resistance (rd)
increases
where ro is the resistance with VGS=0 and rd is the
resistance at a particular level of VGS.
FOR EXAMPLE:
1. For an n-channel JFET with 𝑟𝑜 = 10𝑘Ω 𝑉𝐺𝑆 =

10𝑘Ω
𝑟𝑑 =
−3 2
(1 − )
−6

𝑟𝑑 = 40𝑘Ω
 P-CHANNEL JFETS

The p-channel JFET behaves the same as the n-

channel JFET, except the voltage polarities and
current directions are reversed.
P-CHANNEL JFET CHARACTERISTICS

Also note that at high levels of VDS

the JFET reaches a breakdown
situation: ID increases uncontrollably
if VDS > VDSmax
 JFET SYMBOLS

JFET symbols: (a) n-channel; (b) p-channel.

 SUMMARY:
Important parameters to remember:

VGS = 0V, ID = IDSS

Cutoff (𝐼𝐷 = 0𝐴)

𝑉𝐺𝑆 less than the pinch
off level
𝐼𝐷 is between 0 A and 𝐼𝐷𝑆𝑆 𝑓𝑜𝑟 𝑉𝐺𝑆 ≤
0𝑉 𝑎𝑛𝑑 𝑔𝑟𝑒𝑎𝑡𝑒𝑟 𝑡ℎ𝑎𝑛 𝑡ℎ𝑒 𝑝𝑖𝑐𝑛ℎ 𝑜𝑓𝑓 𝑙𝑒𝑣𝑒𝑙.
JFET Transfer Characteristics
 JFET TRANSFER CHARACTERISTICS

In a BJT, 𝛽 indicates the relationship between 𝐼𝐵 (input) and 𝐼𝐶 (output).

Control variable
𝐼𝐶 = 𝑓 𝐼𝐵 = 𝛽𝐼𝑏

Constant

In a JFET, the relationship of 𝑉𝐺𝑆 (input) and 𝐼𝐷 (output) is defined by

Shockley’s Equation
Control variable
2
𝑉𝐺𝑆
𝐼𝐷 = 𝐼𝐷𝑆𝑆 1−
𝑉𝑝

Constant
 Co-inventor of the first
transistor and formulator of
the “field effect” theory
employed in the development
of the transistor and the FET

William Bradford Shockley

(1910–1989)
This graph shows the value of 𝑰𝑫 for a given value of 𝑽𝑮𝑺 .
 PLOTTING THE JFET TRANSFER CURVE
Using 𝐼𝐷𝑆𝑆 and 𝑉𝑝 (𝑉𝐺𝑆 (𝑜𝑓𝑓)) values found in a specification sheet, the transfer
curve can be plotted according to these three steps:

Step 1:
2
𝑉𝐺𝑆
Solving for 𝑉𝐺𝑆 = 0, 𝐼𝐷 = 𝐼𝐷𝑆𝑆 1− , ID = IDSS
𝑉𝑝
Step 2:
2
𝑉𝐺𝑆
Solving for 𝑉𝐺𝑆 = 𝑉𝑝 (𝑉𝐺𝑆 𝑜𝑓𝑓 ), 𝐼𝐷 = 𝐼𝐷𝑆𝑆 1− , ID = 0 A
𝑉𝑝

Step 3:

Solving for 𝐼𝐷 if we substitute 𝑉𝐺𝑆 = −1 𝑉 , 𝐼𝐷𝑆𝑆 = 8mA and 𝑉𝑝 =-4

2 2
𝑉𝐺𝑆 (−1)
𝐼𝐷 = 𝐼𝐷𝑆𝑆 1− , 𝐼𝐷 = 8𝑚𝐴 1 − ,
𝑉𝑝 (−4)
ID = 4.5mA
Conversely, for a given Shorthand
𝐼𝐷 , 𝑉𝐺𝑆 can be obtained:
Method:

𝑉𝐺𝑆
2 𝐼𝐷𝑆𝑆 𝑉𝑝
𝐼𝐷 = 𝐼𝐷𝑆𝑆 1− 𝐼𝐷 = 𝑉𝐺𝑆 =
𝑉𝑝 4 2

𝐼𝐷
𝑉𝐺𝑆 = 𝑉𝑝 1 − 𝐼𝐷𝑆𝑆
𝐼𝐷𝑆𝑆 𝑉𝐺𝑆 ≅ 0.3𝑉𝑝 𝐼𝐷 =
2
For Example:
Sketch the transfer curve defined by 𝐼𝐷𝑆𝑆 = 12𝑚𝐴 and 𝑉𝑝 = −6𝑉.

By shorthand method,

@ 𝑉𝑝 −6
𝑉𝐺𝑆 = = 2 = −𝟑𝑽
2

𝐼𝐷𝑆𝑆
𝐼𝐷 = = 12𝑚𝐴 4 = 𝟑𝒎𝑨
4

@
𝐼𝐷𝑆𝑆 12𝑚𝐴
𝐼𝐷 = = 2 = 𝟔𝒎𝑨
2

𝑉𝐺𝑆 ≅ 0.3𝑉𝑝 = 0.3 −6𝑉 = −𝟏. 𝟖𝑽

IMPORTANT RELATIONSHIPS
 MOSFET
(METAL-OXIDE-
SEMICONDUCTOR FET)
THERE ARE TWO TYPES OF MOSFETS:

 Depletion-Type
 Enhancement-Type
 DEPLETION-TYPE MOSFET CONSTRUCTION
 The Drain (D) and Source (S)
connect to the to n-doped regions.

 These n-doped regions are

connected via an n-channel.

 This n-channel is connected to the

Gate (G) via a thin insulating layer
of SiO2.

 The n-doped material lies on a p-

n-Channel depletion-type doped substrate that may have an
MOSFET additional terminal connection
called Substrate (SS).
Dielectric
insulator
SILICON DIOXIDE:
 Insulator refer to as DIELECTRIC.
 It sets up opposing electric field within the dielectric
when exposed to an externally applied field.
 The fact that SiO2 layer is an insulating layer means
that:

There is no direct electrical connection between the gate terminal and

the channel of a MOSFET.

It is the insulating layer of SiO2 in the MOSFET construction that

accounts for the very desirable high input impedance of the device
 WHY MOSFET?
 Metal:
 For the drain, source, and gate connection for the proper surface
– in particular, the gate terminal and the control to be offered by
the surface area of the contact.
 Oxide:
 For the Silicon dioxide insulating layer.
 Semiconductor:
 For the basic structure on which the n- and p-type region are
DIFFUSED.

MOSFET is also called

INSULATED GATE-FET or IGFET
DEPLETION-TYPE MOSFET :BASIC OPERATION
AND CHARACTERISTICS

 VGS = 0 and VDS is applied

across the drain to source
terminals.

 This results to attraction of

free electrons of the n-
channel to the drain, and
hence current flows.
Continuation….
 𝑉𝐺𝑆 is set at a negative voltage such as
-1 V

 The negative potential at the gate

pressure electrons toward the p-type
substrate and attract the holes for the
p-type substrate.

 This will reduce the number of free

electrons in the n-channel available for
conduction.

 The more negative the 𝑉𝐺𝑆 , the

resulting level of drain current 𝐼𝐷 is
reduced.

 When 𝑉𝐺𝑆 is reduced to 𝑉𝑃 (pinch off

voltage), then 𝐼𝐷 = 0𝑚𝐴.
When 𝑉𝐺𝑆 is reduced to 𝑉𝑃 (pinch off) {i.e 𝑉𝑃 = −6𝑉} then 𝐼𝐷 = 0𝑚𝐴.

For positive values of 𝑉𝐺𝑆 , the positive gate will draw additional electrons
(free carriers from the p-type substarte and hence 𝐼𝐷 increases.)
DEPLETION-TYPE MOSFET CAN OPERATE IN TWO
MODES:

 Depletion mode
 Enhancement mode
D-TYPE MOSFET IN DEPLETION MODE

The characteristics are similar to a

JFET.

 When 𝑉𝐺𝑆 = 0𝑉, 𝐼𝐷 = 𝐼𝐷𝑆𝑆

 When 𝑉𝐺𝑆 < 0𝑉, 𝐼𝐷 < 𝐼𝐷𝑆𝑆
2
𝑉𝐺𝑆
𝐼𝐷 = 𝐼𝐷𝑆𝑆 1−
𝑉𝑝
D-TYPE MOSFET IN ENHANCEMENT MODE

@ 𝑉𝐺𝑆 > 0
𝐼𝐷 increase above the 𝐼𝐷𝑆𝑆
2
𝑉𝐺𝑆
𝐼𝐷 = 𝐼𝐷𝑆𝑆 1−
𝑉𝑝

Note:
𝑉𝐺𝑆 is now positive polarity
D-TYPE MOSFET SYMBOLS
ENHANCEMENT-TYPE
MOSFET
ENHANCEMENT-TYPE MOSFET CONSTRUCTION
 The Drain (D) and Source (S)
connect to the to n-doped
regions.

 The Gate (G) connects to the p-

doped substrate via a thin
insulating layer of SiO2

 There is no channel

 The n-doped material lies on a p-

doped substrate that may have
an additional terminal connection
 For 𝑉𝐺𝑆 = 0, 𝐼𝐷 = 0(no channel)
 For 𝑉𝐷𝑆 some positive voltage and 𝑉𝐺𝑆
= 0, two reversed biased n-junctions
and no significant flow between drain
and source.

 For 𝑉𝐺𝑆 > 0 and 𝑉𝐺𝑆 > 0, the positive

voltage at gate pressure holes to enter
deeper regions of the p-substrate, and
the electrons in p-substrate and the
electrons in p-substrate will be
attracted to the positive gate.
 The level of 𝑉𝐺𝑆 that results in the
significant increase in drain current in
called:
THRESHOLD VOLTAGE (Vt)
 For 𝑉𝐺𝑆 < 𝑉𝑇 , 𝐼𝐷 = 0𝑚𝑎
BASIC OPERATION OF THE E-TYPE MOSFET
Note:
The enhancement-type
MOSFET operates only in the
enhancement mode
 𝑉𝐺𝑆 is always positive
 As 𝑉𝐺𝑆 increases, 𝐼𝐷 increases
 As 𝑉𝐺𝑆 is kept constant and 𝑉𝐷𝑆 is
increased, then 𝐼𝐷 saturates (𝐼𝐷𝑆𝑆 )
and the saturation level, 𝑉𝐷𝑆𝑠𝑎𝑡 is
reached.
 𝑉𝐷𝑆𝑠𝑎𝑡 can be calculated by

𝑉𝐷𝑠𝑎𝑡 = 𝑉𝐺𝑆 − 𝑉𝑇
 E-TYPE MOSFET TRANSFER CURVE

To determine 𝐼𝐷 given 𝑉𝐺𝑆 :

Where,
𝑉𝑇 is the threshold voltage or voltage at which the MOSFET turns on.
𝑘, a constant, can be determined by using values at a specific point and the
formula:
FOR EXAMPLE:
Substituting 𝐼𝐷(𝑜𝑛) = 10𝑚𝐴 𝑤ℎ𝑒𝑛 𝑉𝐺𝑆(𝑜𝑛) = 8𝑉

The level of 𝑉𝑇 is 2V, as revealed by the

fact that the drain current has dropped
to 0 mA.

10𝑚𝐴
𝑘=
(8𝑉 − 2𝑉)2
= 𝟎. 𝟐𝟕𝟖𝒙𝟏𝟎−𝟑 𝑨
𝑽𝟐
Note:
For values of 𝑉𝐺𝑆 less than the threshold level, the drain current of an enhancement
type MOSFET is 0 mA.

Substituting the 𝑉𝐺𝑆 from the general equation:

2
𝐼𝐷 = 𝑘(𝑉𝐺𝑆 − 𝑉𝑇 )
𝑘 = 0.278𝑥10−3

𝐼𝐷 = 0.278𝑚𝐴/𝑉 2 (𝑉𝐺𝑆 − 2𝑉)2

i.e substituting 𝑉𝐺𝑆 = 4𝑉, we find that

𝐼𝐷 = 0.278𝑚𝐴/𝑉 2 (4𝑉 − 2𝑉)2

𝑰𝑫 = 𝟏. 𝟏𝟏𝒎𝑨
MOSFET SYMBOLS
 VMOS
VERTICAL MOSFETS
 VMOS CHARACTERISTICS:
 Compared with commercially available planar
MOSFETs, VMOS FETs have reduced channel
resistance levels and higher current and power
ratings

 VMOS FETs have a positive temperature

coefficient that will combat the possibility of thermal
runaway

 The reduced charge storage levels result in faster

switching times for VMOS construction compared
to those for conventional planar construction
 CMOS
COMPLEMENTARY MOSFETS
 CMOS CHARACTERISTICS:

 Extensive application in computer logic

design
 Relatively high input impedance
 Fast switching speeds
 Lower operating power levels – CMOS
logic design
THANK YOU!
Reference

 Boylestad, R. L., Nashelsky, L., & Li, L. (2002). Electronic devices and circuit
theory (Vol. 11). Englewood Cliffs, NJ: Prentice Hall.
 Boylestad, R. L. (2010). Introductory circuit analysis. Pearson Education.