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Mosfet 105

The document discusses the metal-oxide-semiconductor field-effect transistor (MOSFET). It describes a MOSFET as a three-terminal semiconductor device used for switching and amplification. The key components are the source, drain and gate terminals. An enhancement mode n-channel MOSFET is described as having a p-doped substrate and n-doped source and drain regions, with a conducting gate separated from the channel by an insulating oxide layer. Applying a threshold voltage or higher to the gate is described as creating a conduction channel between source and drain to allow current flow.

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Victor Tolentino
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71 views15 pages

Mosfet 105

The document discusses the metal-oxide-semiconductor field-effect transistor (MOSFET). It describes a MOSFET as a three-terminal semiconductor device used for switching and amplification. The key components are the source, drain and gate terminals. An enhancement mode n-channel MOSFET is described as having a p-doped substrate and n-doped source and drain regions, with a conducting gate separated from the channel by an insulating oxide layer. Applying a threshold voltage or higher to the gate is described as creating a conduction channel between source and drain to allow current flow.

Uploaded by

Victor Tolentino
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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MOSFET

PRESENTED BY
VIVEK KRISHNA KANNAN
SIDDARTH RAM MOHAN ARUN
WHAT IS A MOSFET?

•  Metal Oxide Semiconductor Field Effect Transistor


•  Three-terminal device: Source, Drain and Gate
•  Transistors are used for switching and amplification in circuits
THINGS TO KNOW
•  A semiconductor (eg: Si) has an electrical conductivity value between
a conductor and an insulator.
•  Current conduction occurs through free movement of electrons or holes.
•  Doping introduces impurities into a pure semiconductor for the purpose of
modulating its electrical properties.
HOW DOPING WORKS
DEVICE STRUCTURE OF N-CHANNEL MOSFET
DEVICE STRUCTURE OF ENHANCEMENT MODE
N-CHANNEL MOSFET

•  The gate terminal is a conducting surface (Metal)


•  The gate terminal is separated by a layer of insulator (oxide) from the
channel
•  The (semiconductor) substrate is doped with p-type impurity
•  Source and Drain are doped with n-type impurity
•  The gate, source and drain have conducting metal contacts
PERSPECTIVE VIEW CROSS SECTIONAL VIEW
DEVICE STRUCTURE OF P-CHANNEL MOSFET
CIRCUIT SYMBOLS COMMONLY USED
FURTHER CLASSIFICATIONS

•  In addition to NMOS & PMOS explained earlier, they can in turn be further
classified into
•  Enhancement mode
•  Depletion mode
WHAT IS ENHANCEMENT MODE ?

•  Enhancement mode MOSFETS comes devoid of a “channel”


•  Depletion mode comes with a channel by default
•  A channel can roughly be described as a conduction path that enables the
MOSFET to work
HOW DOES ENHANCEMENT MOSFET WORK
WITHOUT A CHANNEL ?
•  This is where the gate voltage plays a significant part
•  Gate voltage serves to create the channel in enhancement mode, while in
depletion mode it cane be used to “deplete” the channel; As in destroy.
•  Enhancement mode and depletion mode can be summarized as normally open
and normally closed switches respectively.
CONDUCTION IN AN ENHANCEMENT MODE N-
MOSFET
v Creation of the channel by applying gate voltage
•  Threshold voltage : Gate voltage must be higher than
Vt, only then is the conduction path created

v Channel is just the ‘path’; Additional potential


difference is needed to instigate and sustain charge
flow. This is provided by applying a potential
difference voltage between drain and source
terminals
I-V CHARACTERISTICS OF MOSFET
v  The plot is between the drain current and the
drain-source voltage, for different values of
gate voltage

v  MOSFET operating regions:


•  Cutoff mode
•  Triode/Linear mode
•  Saturation mode
APPLICATIONS

•  Microprocessors for switching purposes


•  Radio frequency amplifiers

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