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Darlington Power Transistor: Data Sheet

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76 views4 pages

Darlington Power Transistor: Data Sheet

Uploaded by

Ricardo Piovano
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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DATA SHEET

DARLINGTON POWER TRANSISTOR

2SD1843
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

The 2SD1843 is a Darlington connection transistor with on-chip PACKAGE DRAWING (UNIT: mm)
dumper diode in collector to emitter and zener diode in collector to
base. This transistor is ideal for use in acuator drives such as
motors, relays, and solenoids.

FEATURES
• High DC current gain due to Darlington connection
• High surge resistance due to on-chip protection elements:
C to E: Dumper diode
C to B: Zener diode
• Low collector saturation voltage

ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)


Parameter Symbol Ratings Unit
Collector to base voltage VCBO 60±10 V
Collector to emitter voltage VCEO 60±10 V
Emitter to base voltage VEBO 7.0 V
Collector current (DC) IC(DC) ±1.0 A
Collector current (pulse) IC(pulse)* ±2.0 A
Total power dissipation PT(Ta = 25°C) 1.0 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
* PW ≤ 10 ms, duty cycle ≤ 50%

ELECTRICAL CHARACTERISTICS (Ta = 25°°C)


Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current ICBO VCB = 40 V, IE = 0 0.5 µA
Emitter cutoff current IEBO VEB = 5.0 V, IC = 0 1.0″ mA
DC current gain hFE2** VCE = 2.0 V, IC = 0.2 A 1000
DC current gain hFE2** VCE = 2.0 V, IC = 0.5 A 2000 30000
Collector saturation voltage VCE(sat)** IC = 0.5 A, IB = 0.5 mA 1.5 V
Base saturation voltage VBE(sat)** IC = 0.5 A, IB = 0.5 mA 2.0 V
Turn-on time tON IC = 0.5 A, RL = 100 Ω 0.5 µs
Storage time tstg IB1 = −IB2 = 0.1 mA, VCC = 50 V 1.0 µs
Fall time tf 1.0 µs
* *Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking M L K
hFE2 2000 to 5000 4000 to 10000 8000 to 30000
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. D16200EJ1V0DS00


Date Published April 2002 N CP(K) © 2002
1998
Printed in Japan
2SD1843

TYPICAL CHARACTERISTICS (Ta = 25°°C)

2 Data Sheet D16200EJ1V0DS


2SD1843

SWICHING TIME (ton, tstg, tf) TEST CIRCUIT

Data Sheet D16200EJ1V0DS 3


2SD1843

• The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
• While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4

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