PRACTICE TEST (i) 75% (ii) 25%

(iii) 90% (iv) 50%

Semiconductor Basics
9. When the outermost orbit of an atom has
1. The outermost orbit of an atom can have a exactly 4 valence electrons, the material is
maximum of .............. electrons. generally ..............
(i)8 (ii)6 (i) a metal (ii) a non-metal
(iii)4 (iv)3 (iii) a semiconductor
(iv) an insulator
2. When the outermost orbit of an atom has
less than 4 electrons, the material is 10. Thevenin’s theorem replaces a
generally a .............. complicated circuit facing a load by
(i) non-metal (ii) metal an..............
(iii) semiconductor (iv) none of above (i) ideal voltage source and parallel resistor
(ii) ideal current source and parallel resistor
3. The valence electrons have.............. (iii) ideal current source and series resistor
(i) very small energy (iv) ideal voltage source and series resistor
(ii) least energy
(iii) maximum energy 11. The output voltage of an ideal voltage
(iv) none of the above source is ..............
(i) zero (ii) constant
4. A large number of free electrons exist in (iii) dependent on load resistance
.............. (iv) dependent on internal resistance
(i) semiconductors (ii) metals
(iii) insulators (iv) non-metals 12. The current output of an ideal current
source is ..............
5. An ideal voltage source has .............. (i) zero (ii) constant
internal resistance. (iii) dependent on load resistance
(i) small (ii) large (iv) dependent on internal resistance
(iii) infinite (iv) zero
13. Norton’s theorem replaces a complicated
6. An ideal current source has .............. circuit facing a load by an ..............
internal (i) ideal voltage source and parallel resistor
resistance. (ii) ideal current source and parallel resistor
(i) infinite (ii) zero (iii) ideal voltage source and series resistor
(iii) small (iv) none of the above (iv) ideal current source and series resistor

7. Maximum power is transferred if load 14. The practical example of ideal voltage
resistance is equal to .......... of the source. source is ..............
(i) half the internal resistance (i) lead-acid cell (ii) dry cell
(ii) internal resistance (iii) Daniel cell (iv) none of the above
(iii) twice the internal resistance
(iv) none of the above 15. The speed of electrons in vacuum is
.............. than in a conductor.
8. Efficiency at maximum power transfer is (i) less (ii) much more
.............. (iii) much less (iv) none of the above
 (i)45 W (ii) 60 W
16. Maximum power will be transferred (iii)30 W (iv) 90 W
from a source of 10 Ω resistance to a load of
.............. 23. The maximum power transfer theorem is
(i)5 Ω(ii) 20 Ω used in ..............
(iii) 10 Ω(iv) 40 Ω (i) electronic circuits
(ii) power system
17. When the outermost orbit of an atom has (iii) home lighting circuits
more than 4 electrons, the material is (iv) none of the above
generally a ..............
(i)metal (ii) non-metal 24. The Norton resistance of a network is 20
(iii) semiconductor (iv) none of the above Ω and the shorted-load current is 2 A. If the
network is loaded by a resistance equal to
18. An ideal source consists of 5 V in series 20 Ω, the current through the load will be
with 10 kΩ resistance. The current ..............
magnitude of equivalent current source is (i)2 A (ii) 0.5 A
.............. (iii)4 A (iv)1 A
(i)2 mA (ii) 3.5 mA
(iii) 0.5 mA (iv) none of the above 25. The Norton current is sometimes called
the..............
19. To get Thevenin voltage, you have to (i) shorted-load current
.............. (ii) open-load current
(i) short the load resistor (iii) Thevenin current
(ii) open the load resistor (iv) Thevenin voltage
(iii) short the voltage source
(iv) open the voltage source

20. To get the Norton current, you have to

..............
(i) short the load resistor
(ii) open the load resistor
(iii) short the voltage source
(iv) open the voltage source

21. The open-circuited voltage at the

terminals of load R in a network is 30 V.
Under the conditions of maximum power
transfer, the load voltage will be ..............L
(i) 30 V (ii) 10 V
(iii)5 V (iv) 15 V

22. Under the conditions of maximum

power transfer, a voltage source is
delivering a power of 30 W to the load. The
power produced by the source is ..............
PN Junction Diode (i) an insulator
(ii) an intrinsic semiconductor
1. A semiconductor is formed by........ (iii) p-type semiconductor
bonds. (iv) n-type semiconductor
(i) covalent (ii) electrovalent
(iii) co-ordinate (iv) none of the above 10. Addition of pentavalent impurity to a
semi-conductor creates many........
2. A semiconductor has ........ temperature (i) free electrons (ii) holes
coefficient of resistance. (iii) valence electrons
(i) positive (ii) zero (iv) bound electrons
(iii) negative (iv) none of the above
11. A pentavalent impurity has........ valence
3. The most commonly used semiconductor electrons.
is........ (i)3 (ii)5
(i) germanium (ii) silicon (iii)4 (iv)6
(iii) carbon (iv) sulphur
12. An n-type semiconductor is........
4. A semiconductor has generally........ (i) positively charged
valence electrons. (ii) negatively charged
(i)2 (ii)3 (iii) electrically neutral
(iii)6 (iv)4 (iv) none of the above

5. The resistivity of pure germanium under 13. A trivalent impurity has........ valence
standard conditions is about ........ electrons.
(i)6 * 104 Ω cm (ii) 60 Ω cm (i)4 (ii)5
(iii)3 * 106 cm (iv)6 * 10-4 Ω cm (iii)6 (iv)3

6. The resistivity of pure silicon is about 14. Addition of trivalent impurity to a

........ semiconductor creates many ........
(i) 100 Ω cm (ii) 6000 Ω cm (i) holes (ii) free electrons
(iii)3 * 105 Ω cm (iv) 1.6 * 10-8 Ω cm (iii) valence electrons
(iv) bound electrons
7. When a pure semiconductor is heated, its
resistance ........ 15. A hole in a semiconductor is defined as
(i) goes up (ii) goes down ........
(iii) remains the same (iv) cannot say (i) a free electron
(ii) the incomplete part of an electron pair
8. The strength of a semiconductor crystal bond
comes from ........ (iii) a free proton
(i) forces between nuclei (iv) a free neutron
(ii) forces between protons
(iii) electron-pair bonds 16. The impurity level in an extrinsic
(iv) none of the above semiconductor
is about ........ of pure semiconductor.
9. When a pentavalent impurity is added to a (i) 10 atoms for 108 atoms
pure semiconductor, it becomes ........ (ii) 1 atom for 108 atoms
(iii) 1 atom for 104 atoms (iii) zero (iv) 0.3 V
(iv) 1 atom for 100 atoms
24. In the depletion region of a pn junction,
17. As the doping to a pure semiconductor there is a shortage of ..........
increases, the bulk resistance of the (i) acceptor ions (ii) holes and electrons
semiconductor ........ (iii) donor ions (iv) none of the above
(i) remains the same
(ii) increases 25. A reverse biased pn junction has ........
(iii) decreases (i) very narrow depletion layer
(iv) none of the above (ii) almost no current
(iii) very low resistance
18. A hole and electron in close proximity (iv) large current flow
would tend to ........
(i) repel each other 26. A pn junction acts as a ........
(ii) attract each other (i) controlled switch
(iii) have no effect on each other (ii) bidirectional switch
(iv) none of the above (iii) unidirectional switch
(iv) none of the above
19. In a semiconductor, current conduction
is due ........ 27. A reverse biased pn junction has
(i) only to holes resistance of the........
(ii) only to free electrons (i) order of Ω(ii) order of k Ω
(iii) to holes and free electrons (iii) order of M Ω(iv) none of the above
(iv) none of the above
28. The leakage current across a pn junction
20. The random motion of holes and free is due to ........
electrons due to thermal agitation is (i) minority carriers
called........ (ii) majority carriers
(i) diffusion (ii) pressure (iii) junction capacitance
(iii) ionisation (iv) none of the above (iv) none of the above

21. A forward biased pn junction has a 29. When the temperature of an extrinsic
resistance of the........ semiconductor is increased, the pronounced
(i) order of Ω(ii) order of k Ω Effect is on ........
(iii) order of M Ω(iv) none of the above (i) junction capacitance
(ii) minority carriers
22. The battery connections required to (iii) majority carriers
forward bias a pn junction are ........ (iv) none of the above
(i) +ve terminal to p and -ve terminal to n
(ii) -ve terminal to p and +ve terminal to n 30. With forward bias to a pn junction, the
(iii) -ve terminal to p and -ve terminal to n width of depletion layer........
(iv) none of the above (i) decreases (ii) increases
(iii) remains the same
23. The barrier voltage at a pn junction for (iv) none of the above
germanium is about ........
(i) 3.5 V (ii)3V
31. The leakage current in a pn junction is of 33. At room temperature, an intrinsic
the order of ........ semiconductor has ........
(i)A (ii)mA (i) many holes only
(iii)kA (iv) µA (ii) a few free electrons and holes
(iii) many free electrons only
32. In an intrinsic semiconductor, the (iv) no holes or free electrons
number of free electrons ........
(i) equals the number of holes 34. At absolute temperature, an intrinsic
(ii) is greater than the number of holes semiconductor has ........
(iii) is less than the number of holes (i) a few free electrons
(iv) none of the above (ii) many holes

(iii) many free electrons

(iv) no holes or free electrons

35. At room temperature, an intrinsic silicon

crystal acts approximately as ........
(i) a battery
(ii) a conductor
(iii) an insulator
(iv) a piece of copper wire
PN Junction Diode Application
9. The ratio of reverse resistance and
1. A crystal diode has........ forward resistance of a germanium crystal
(i) one pn junction diode is about ........
(ii) two pn junctions (i)1 : 1 (ii) 100 : 1
(iii) three pn junctions (iii) 1000 : 1 (iv) 40000 : 1
(iv) none of the above
10. The leakage current in a crystal diode is
2. A crystal diode has forward resistance of due to ........
the order of ........ (i) minority carriers
(i)kΩ(ii) Ω (ii) majority carriers
(iii)M Ω(iv) none of the above (iii) junction capacitance
(iv) none of the above
3. If the arrow of crystal diode symbol is
positive w.r.t. bar, then diode is........ biased. 11. If the temperature of a crystal diode
(i) forward increases, then leakage current ........
(ii) reverse (i) remains the same
(iii) either forward or reverse (ii) decreases
(iv) none of the above (iii) increases
(iv) becomes zero
4. The reverse current in a diode is of the
order of ........ 12. The PIV rating of a crystal diode is ........
(i)kA (ii)mA that of equivalent vacuum diode.
(iii) µA (iv)A (i) the same as (ii) lower than
(iii) more than (iv) none of the above
5. The forward voltage drop across a silicon
diode is about ........ 13. If the doping level of a crystal diode is
(i) 2.5 V (ii)3 V increased, the breakdown voltage .........
(iii) 10 V (iv) 0.7 V (i) remains the same
(ii) is increased
6. A crystal diode is used as ........ (iii) is decreased
(i) an amplifier (ii) a rectifier (iv) none of the above
(iii) an oscillator (iv) a voltage regulator
14. The knee voltage of a crystal diode is
7. The d.c. resistance of a crystal diode is approximately equal to ........
........its a.c. resistance. (i) applied voltage
(i) the same as (ii) more than (ii) breakdown voltage
(iii) less than (iv) none of the above (iii) forward voltage
(iv) barrier potential
8. An ideal crystal diode is one which
behaves as a perfect ........ when forward 15. When the graph between current through
biased. and voltage across a device is a straight line,
(i) conductor the device is referred to as ........
(ii) insulator (i) linear (ii) active
(iii) resistance material (iii) nonlinear (iv) passive
(iv) none of the above
16. When the crystal diode current is large, 24. A zener diode is always ..........
the bias is ........ connected.
(i) forward (ii) inverse (i) reverse
(iii) poor (iv) reverse (ii) forward
(iii) either reverse or forward
17. A crystal diode is a ........ device. (iv) none of the above
(i) non-linear (ii) bilateral
(iii) linear (iv) none of the above 25. A zener diode utilises ........
characteristic for its operation.
18. A crystal diode utilises ........ (i) forward
characteristic for rectification. (ii) reverse
(i) reverse (ii) forward (iii) both forward and reverse
(iii) forward or reverse (iv) none of the above
(iv) none of the above
26. In the breakdown region, a zener diode
19. When a crystal diode is used as a behaves like a ......... source.
rectifier, the most important consideration is (i) constant voltage
........ (ii) constant current
(i) forward characteristic (iii) constant resistance
(ii) doping level (iv) none of the above
(iii) reverse characteristic
(iv) PIV rating 27. A zener diode is destroyed if it ........
(i) is forward biased
20. If the doping level in a crystal diode is (ii) is reverse biased
increased, the width of depletion layer ........ (iii) carries more than rated current
(i) remains the same (iv) none of the above
(ii) is decreased
(iii) is increased 28. A series resistance is connected in the
(iv) none of the above Zener circuit to ........
(i) properly reverse bias the zener
21. A zener diode has ........ (ii) protect the zener
(i) one pn junction (iii) properly forward bias the zener
(ii) two pn junctions (iv) none of the above
(iii) three pn junctions
(iv) none of the above 29. A zener diode is ........ device.
(i) a non-linear (ii) a linear
22. A zener diode is used as ........ (iii) an amplifying (iv) none of the above
(i) an amplifier (ii) a voltage regulator
(iii) a rectifier (iv) a multivibrator 30. A zener diode has ........ breakdown
voltage.
23. The doping level in a zener diode is (i) undefined (ii) sharp
........ that of a crystal diode. (iii) zero (iv) none of the above
(i) the same as (ii) less than
(iii) more than (iv) none of the above 31. ........ rectifier has the lowest forward
resistance.
(i) solid state (ii) vacuum tube
(iii) gas tube (iv) none of the above
39. If the PIV rating of a diode is
32. Mains a.c. power is converted into d.c. exceeded,........
power for ........ (i) the diode conducts poorly
(i) lighting purposes (ii) the diode is destroyed
(ii) heaters (iii) the diode behaves as zener diode
(iii) using in electronic equipment (iv) none of the above
(iv) none of the above
40. A 10 V power supply would use ........
33. The disadvantage of a half-wave rectifier as filter capacitor.
is that the ........ (i) paper capacitor (ii) mica capacitor
(i) components are expensive (iii) electrolytic capacitor
(ii) diodes must have a higher power rating (iv) air capacitor
(iii) output is difficult to filter
(iv) none of the above 41. A 1000 V power supply would use ........
as a filter capacitor.
34. If the a.c. input to a half-wave rectifier (i) paper capacitor
has an r.m.s. value of 400/√2 volts, then (ii) air capacitor
diode PIV rating is ........ (iii) mica capacitor
(i) 400/√2 V (ii) 400 V (iv) electrolytic capacitor
(iii) 400 */√2 V (i v) none of the above
42. The ...... filter circuit results in the best
35. The ripple factor of a half-wave rectifier voltage regulation.
is........ (i) choke input
(i)2 (ii) 1.21 (ii) capacitor input
(iii) 2.5 (iv) 0.48 (iii) resistance input
(iv) none of the above
36. There is a need of transformer for ........
(i) half-wave rectifier 43. A half-wave rectifier has an input
(ii) centre-tap full-wave rectifier voltage of 240 V r.m.s. If the step-down
(iii) bridge full-wave rectifier transformer has a turns ratio of 8 : 1, what is
(iv) none of the above the peak load voltage ? Ignore diode drop.
(i) 27.5 V (ii) 86.5 V
37. The PIV rating of each diode in a bridge (iii) 30 V (iv) 42.5 V
rectifier is ........ that of the equivalent
centretap rectifier. 44. The maximum efficiency of a half-wave
(i) one-half (ii) the same as rectifier is ...........
(iii) twice (iv) four times (i) 40.6% (ii) 81.2%
(iii) 50% (iv) 25%
38. For the same secondary voltage, the
output voltage from a centre-tap rectifier is 45. The most widely used rectifier is ...........
........than that of bridge rectifier. (i) half-wave rectifier
(i) twice (ii) thrice (ii) centre-tap full-wave rectifier
(iii) four times (iv) one-half (iii) bridge full-wave rectifier
(iv) none of the above
 THEORY

1. What is wrong the diode?

a. Open
b. Short
c. Nothing
d. Not enough data

2. If a 169.7 V half-wave peak has an average voltage of 54 V, what is the average of two
full-wave peaks?

3. A half-wave rectifier has a load resistance of 3.5 KΩ. If the diode and secondary of the
transformer have a total resistance of 800KΩ and the ac input voltage has 240 V (peak value),
determine:
(i) Peak, rms and average values of current through load
(ii) DC power output
(iii) AC power input
(iv) Rectification efficiency

4. A full wave bridge rectifier is fed with a voltage, 50 sin 100 πt. Its load resistance is
400Ω. The diodes used in the rectifier have an average forward resistance of 30Ω. Compute the
(i) Average and rms values of load current,
(ii) Ripple factor
(iii) Efficiency of rectification.

5. The zener diode in the circuit shown below regulates at 50V, over a range of diode
currents from 5mA to 40mA. The supply voltage V = 150V. Compute the value of R to allow
voltage regulation from a zero load current to a maximum load current ILmax. What is ILmax?