NIKO-SEM N-Channel Logic Level Enhancement P1203BV

Mode Field Effect Transistor SOP-8

Halogen-Free & Lead-Free

D
PRODUCT SUMMARY 4 :GATE
5,6,7,8 :DRAIN
V(BR)DSS RDS(ON) ID 1,2,3 :SOURCE
30V 12mΩ 11A G

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Gate-Source Voltage VGS ±20 V
TA = 25 °C 11
Continuous Drain Current ID
TA = 100 °C 7
1
A
Pulsed Drain Current IDM 40
Avalanche Current IAS 28
Avalanche Energy L = 0.1mH EAS 40 mJ
TA = 25 °C 2.5
Power Dissipation PD W
TA = 100 °C 1
Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Case RθJC 25
°C / W
Junction-to-Ambient RθJA 50
1
Pulse width limited by maximum junction temperature.

ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 30
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1 1.8 3
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA
VDS = 24V, VGS = 0V 1
Zero Gate Voltage Drain Current IDSS µA
VDS = 20V, VGS = 0V, TC = 125 °C 10
1
On-State Drain Current ID(ON) VDS = 10V, VGS = 10V 40 A
Drain-Source On-State VGS = 4.5V, ID = 11A 14 17.5
Resistance
1 RDS(ON) mΩ
VGS = 10V, ID = 11A 8.5 12
1
Forward Transconductance gfs VDS = 5V ID = 11A 40 S

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 NIKO-SEM N-Channel Logic Level Enhancement P1203BV
Mode Field Effect Transistor SOP-8
Halogen-Free & Lead-Free

DYNAMIC
Input Capacitance Ciss 846
Output Capacitance Coss VGS = 0V, VDS = 12V, f = 1MHz 225 pF
Reverse Transfer Capacitance Crss 126
Gate Resistance RG VGS = 0V, f = 1MHz 1.65 Ω
(VGS=10V) 17
2
Total Gate Charge Qg (V =4.5V nC
GS 8.1
)
VDS = 0.5V(BR)DSS, ID = 8.8A
2
Gate-Source Charge Qgs 2.7
2
Gate-Drain Charge Qgd 4
2
Turn-On Delay Time td(on) 9
2
Rise Time tr VDS = 15V, ID ≅ 12.5A, 40
2
nS
Turn-Off Delay Time td(off) VGS = 10V,RGEN = 3Ω 20
2
Fall Time tf 6
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TA = 25 °C)
Continuous Current IS 1.9 A
1
Forward Voltage VSD IF = 25A, VGS = 0V 1.3 V
Reverse Recovery Time trr IF = 11 A, dlF/dt = 100A / µS 21 nS
Reverse Recovery Charge Qrr 10 nC
1
Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％.
2
Independent of operating temperature.

REMARK: THE PRODUCT MARKED WITH “P1203BV”, DATE CODE or LOT #

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 NIKO-SEM N-Channel Logic Level Enhancement P1203BV
Mode Field Effect Transistor SOP-8
Halogen-Free & Lead-Free

Output Characteristics Transfer Characteristics

30 VGS = 10V 30
4 .5 V
ID, Drain-To-Source Current(A)

7V
25 25

ID, Drain-To-Source Current(A)

20 20
4V

15 15

10 10
T J =125° C
T J =25° C
5 5
T J= -20° C
3V
0 0
0 0 .5 1 1 .5 2 2 .5 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
VDS, Drain-To-Source Voltage(V) VGS, Gate-To-Source Voltage(V)

On-Resistance VS Temperature Capacitance Characteristic

RDS(ON) ╳ 2.0
1.00E+04

RDS(ON) ╳ 1.8
Ciss
RDS(ON)ON-Resistance(OHM)

8.00E+03
RDS(ON) ╳ 1.6
C , Capacitance(pF)

RDS(ON) ╳ 1.4
6.00E+03

RDS(ON) ╳ 1.2

4.00E+03
RDS(ON) ╳ 1.0

RDS(ON) ╳ Coss
0.8
2.00E+03

RDS(ON) ╳ 0.6 V GS=10V Crss

ID =11A
0.00E+00
RDS(ON) ╳ 0.4
0 5 10 15 20 25 30
-50 -25 0 25 50 75 100 125 150
TJ , Junction Temperature(˚C) VDS, Drain-To-Source Voltage(V)

Gate charge Characteristics Source-Drain Diode Forward Voltage

10 Characteristics 1.0E+02
VGS , Gate-To-Source Voltage(V)

1.0E+01
8
IS , Source Current(A)

T J =150° C
1.0E+00
ID=8.8A
6
VDS=15V 1.0E-01
T J =25° C
1.0E-02
4
1.0E-03

2
1.0E-04

0 1.0E-05
0.1 0.3 0.5 0.7 0.9 1.1 1.3
0 5 10 15 20

VSD, Source-To-Drain Voltage(V)

Qg , Total Gate Charge

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 NIKO-SEM N-Channel Logic Level Enhancement P1203BV
Mode Field Effect Transistor SOP-8
Halogen-Free & Lead-Free

Safe Operating Area Single Pulse Maximum Power Dissipation

100 50

SINGLE PULSE
RθJA = 50˚
˚ C/W
40 T A=25˚˚C
10
ID , Drain Current(A)

↓ 100uS

Power(W)
30
Operation in This Area
1ms
is Lim ited by RDS(ON)
1
10m s
20
100m s

1S
0.1 NOTE : 10S
1.V GS= 10V DC
10
2.TA=25˚˚C
˚ C/W
3.RθJA = 50˚
4.Single Pulse
0.01 0
0.1 1 10 100 0.001 0.01 0.1 1 10
VDS, Drain-To-Source Voltage(V) Single Pulse Time(s)

Transient Thermal Response Curve

1.00E+01
Transient Thermal Resistance
r(t) , Normalized Effective

1.00E+00
Duty Cycle=0.5

0.2

1.00E-01 0.1 Note

0.05
0.02

0.01 1.Duty cycle, D= t1 / t2

1.00E-02 2.RthJA = 50 ℃/W
3.TJ-TA = P*RthJA(t)
4.RthJA(t) = r(t)*RthJA

single Pluse

1.00E-03
1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02
T1 , Square Wave Pulse Duration[sec]

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 NIKO-SEM N-Channel Logic Level Enhancement P1203BV
Mode Field Effect Transistor SOP-8
Halogen-Free & Lead-Free

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