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Lab 2 Semiconductor Diode Characteristics

1. The document describes an experiment to study the characteristics of forward and reverse biased semiconductor junction diodes. 2. The experiment measures the current-voltage relationship of diodes under forward and reverse bias using a circuit with a DC power supply, ammeter, and silicon diode. 3. Results are recorded in tables showing the voltage and current values at increasing voltage steps to plot the forward and reverse bias characteristics of the silicon diode.

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Khadar Mohamed
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260 views3 pages

Lab 2 Semiconductor Diode Characteristics

1. The document describes an experiment to study the characteristics of forward and reverse biased semiconductor junction diodes. 2. The experiment measures the current-voltage relationship of diodes under forward and reverse bias using a circuit with a DC power supply, ammeter, and silicon diode. 3. Results are recorded in tables showing the voltage and current values at increasing voltage steps to plot the forward and reverse bias characteristics of the silicon diode.

Uploaded by

Khadar Mohamed
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Electronics Laboratory

Experiment No.1
Semiconductor diode characteristics

Object:
To study the characteristics of the forward and reverse biased junction diodes.

Apparatus:
1. DC power supply.
2. Two AVOmeters.
3. Breadboard, Diode and 1KΩ Resistor.

Theory:
The general from of the current - voltage c/cs of a diode is shown in Figure (l). A
current flow in the forward direction is very large compared with that in the reverse
direction and such a device is very useful as a rectifier.
The diode is in the forward direction when an external battery is connected with
positive
terminal to the (p) region and negative terminal to the region (n). The reverse current
through the diode varies greatly with temperature and with the semiconductor
materiel used.

Figure (1) V-I c/cs of a real diode


Electronics Laboratory

Procedure:
1. Connect the circuit as shown in Figure (2) using silicon diode.
2. Increase the variable DC voltage from zero in steps of (0.1 volts) up to (1 volts),
then in step of (0.5 volt) up to (4 volt), and record the voltage across the (100
ohm) resistance (Vr).
3. Tabulate your results in a table as shown in table (1).
4. Connect the circuit shown in Figure (3) using Si diode.
5. Increase the variable DC voltage from zero in steps of (0.2 volts) up to (1 volt),
then in steps of (1 volt) up to (4 volts) and for each step record the current
lowing in the circuit.
6. Tabulate your result in a table as shown in table (2).

Note:
For the reverse c/cs of (Si) diode the reverse current is very small compare with the
current of (Ge) diode , so its assumed to be zero.

Discussion:
1. Compare between the Si & Ge diode? which is has the better forward c/cs?
2. What is the barrier field and how is it produce?
3. Comment on the results of the experiment.
Electronics Laboratory

1 KΩ

Vr
E Vs
0-4 V

Figure (2) forward c/cs circuit

Vs (Volt) Vr (Volt) Vf =Vs –Vr (Volt) If =Vr /r (mA)

Table (1)

E
0-4 V V

Figure(3) Reverse c/cs circuit

Vreverse Ireverse

Table (2)

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